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Recent progress in semiconductor lasers — cw GaAs lasers are now ready for new applications
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0022-2313(73)90071-9openalex-snapshot
Fundamentals of stimulated emission in semiconductors
inferredcites →https://doi.org/10.1016/0022-2313(73)90073-2openalex-snapshot
Advances in GaAs junction lasers with stripe geometry
inferredcites →https://doi.org/10.1016/0030-3992(74)90097-8openalex-snapshot
The physics and technology of semiconductor light emitters and detectors
inferredcites →https://doi.org/10.1016/b978-0-12-002904-4.50011-5openalex-snapshot
Heterostructure Junction Lasers
inferredcites →https://doi.org/10.1016/b978-0-12-002957-0.50001-7openalex-snapshot
Applied Solid State Science
inferredcites →https://doi.org/10.1049/el:19730024openalex-snapshot
Direct modulation of double-heterostructure lasers at rates up to 1 Gbit/s
inferredcites →https://doi.org/10.1049/el:19730214openalex-snapshot
Low threshold-current density in 5-layer-heterostructure (GaAl)As/GaAs localised-gain-region injection lasers
inferredcites →https://doi.org/10.1063/1.1653606openalex-snapshot
STRIPE-GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS: MODE STRUCTURE AND cw OPERATION ABOVE ROOM TEMPERATURE
inferredcites →https://doi.org/10.1063/1.1654303openalex-snapshot
Differential I/V of heterostructure correlates with laser threshold
inferredcites →https://doi.org/10.1063/1.1654649openalex-snapshot
On the ultimate lower limit of attenuation in glass optical waveguides
inferredcites →https://doi.org/10.1063/1.1654738openalex-snapshot
Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substrates
inferredcites →https://doi.org/10.1063/1.1654838openalex-snapshot
Strain-induced degradation of GaAs injection lasers
inferredcites →https://doi.org/10.1063/1.1654851openalex-snapshot
Continuous operation of GaAs–Ga1 − x Al x As double-heterostructure lasers with 30 °C half-lives exceeding 1000 h
inferredcites →https://doi.org/10.1063/1.1654855openalex-snapshot
Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasers
inferredcites →https://doi.org/10.1063/1.1654880openalex-snapshot
Threshold, spectral, and output power characteristics of GaAs/Ga1−xAlxAs single-heterostructure diode lasers
inferredcites →https://doi.org/10.1063/1.1654962openalex-snapshot
Defect structure introduced during operation of heterojunction GaAs lasers
inferredcites →https://doi.org/10.1063/1.1654970openalex-snapshot
Erratum: Continuous operations of GaAs–Ga1− x Al x As double-heterostructure lasers with 30°C half-lives exceeding 1000 h
inferredcites →https://doi.org/10.1063/1.1654991openalex-snapshot
Degradation mechanism of (Al · Ga)As double-heterostructure laser diodes
inferredcites →https://doi.org/10.1063/1.1662806openalex-snapshot
Experimental properties of injection lasers. IV. Modes of large cavity with sawed sides
inferredcites →https://doi.org/10.1063/1.1662904openalex-snapshot
cw degradation at 300°K of GaAs double-heterostructure junction lasers. I. Emission spectra
inferredcites →https://doi.org/10.1063/1.1662980openalex-snapshot
GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement
inferredcites →https://doi.org/10.1103/physrevlett.22.1085openalex-snapshot
Coupled Longitudinal Mode Pulsing in Semiconductor Lasers
inferredcites →https://doi.org/10.1109/iedm.1973.188720openalex-snapshot
GaAs-AlxGa1-xAs double heterostructure laser for optical fiber communication system
inferredcites →https://doi.org/10.1109/isscc.1973.1155171openalex-snapshot
Subnanosecond PCM of GaAs lasers by Gunn-effect switches
inferredcites →https://doi.org/10.1109/jqe.1968.1075000openalex-snapshot
Dynamics of injection lasers
inferredcites →https://doi.org/10.1109/jqe.1970.1076468openalex-snapshot
Comments on the reliability of GaAs Stripe-Geometry juntion lasers
inferredcites →https://doi.org/10.1109/jqe.1970.1076477openalex-snapshot
Repetitively Q -switched light pulses from GaAs injection lasers with tandem double-section stripe geometry
inferredcites →https://doi.org/10.1109/jqe.1972.1076960openalex-snapshot
Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasers
inferredcites →https://doi.org/10.1109/jqe.1973.1077457openalex-snapshot
Spectral behavior and linewidth of (GaAl)As-GaAs double-heterostructure lasers at room temperature with stripe geometry configuration
inferredcites →https://doi.org/10.1109/jqe.1973.1077466openalex-snapshot
Mesa-stripe-geometry double-heterostructure injection lasers
inferredcites →https://doi.org/10.1109/jqe.1973.1077475openalex-snapshot
Transverse mode control in semiconductor lasers
inferredcites →https://doi.org/10.1109/jqe.1973.1077605openalex-snapshot
New light-focusing glass fibers made by a continuous process
inferredcites →https://doi.org/10.1109/proc.1973.9197openalex-snapshot
Degradation of CW GaAs double-heterojunction lasers at 300 K
inferredcites →https://doi.org/10.1109/tge.1972.271296openalex-snapshot
The Use of Lasers in Pollution Monitoring
inferredcites →https://doi.org/10.1142/9789814503464_0126openalex-snapshot
A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe Laser
inferredcites →https://doi.org/10.1143/jjap.12.1585openalex-snapshot
A GaAs-Al x Ga 1- x As Double Heterostructure Planar Stripe Laser
inferredcites →https://doi.org/10.1143/jjap.13.835openalex-snapshot
Lasing Characteristics in a Degraded GaAs–AlxGa1-xAs Double Heterostructure Laser
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4795110openalex-extracted
Impact of Graphene as 2d Interlayer on the Growth of Gaas by Csvt on Si (100) and Gaas (100) Substrates
inferred← citeshttps://doi.org/10.1002/pssa.2210420102openalex-snapshot
Atomic diffusion in semiconductor epitaxial structures
inferred← citeshttps://doi.org/10.1007/978-3-642-75225-4_5openalex-snapshot
Wideband Acousto-Optic Bragg Diffraction in LiNbO3 Waveguide and Applications
inferred← citeshttps://doi.org/10.1007/bf00882730openalex-snapshot
Modulation behavior of semiconductor injection lasers
inferred← citeshttps://doi.org/10.1007/bf00886018openalex-snapshot
Recent advances in lead-chalcogenide diode lasers
inferred← citeshttps://doi.org/10.1016/j.chaos.2022.111850openalex-snapshot
“Phase transitions” in small systems: Why standard threshold definitions fail for nanolasers
inferred← citeshttps://doi.org/10.1016/j.mssp.2015.02.076openalex-snapshot
A first-principles study of transport properties of a gallium arsenide nanoribbon-based molecular device
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108605openalex-snapshot
Impact of graphene as 2D interlayer on the growth of GaAs by CSVT on Si (100) and GaAs (100) substrates
inferred← citeshttps://doi.org/10.1063/1.88616openalex-snapshot
Double heterojunction PbS-PbS1−xSex-PbS laser diodes with cw operation up to 96 K
inferred← citeshttps://doi.org/10.1109/jqe.1975.1068655openalex-snapshot
Direct modulation of a double-heterostructure laser using a Schottky-barrier-gate Gunn-effect digital device
inferred← citeshttps://doi.org/10.1109/t-ed.1976.18506openalex-snapshot
Progress in light activated power thyristors
inferred← citeshttps://doi.org/10.1109/tmtt.1982.1131329openalex-snapshot
Direct Modulation of Semiconductor Injection Lasers
inferred← citeshttps://doi.org/10.1364/ao.14.002571openalex-snapshot
Data distribution using fiber optics
inferred← citeshttps://doi.org/10.1364/oe.492556openalex-snapshot
Gallium arsenide optical phased array photonic integrated circuit
inferred← citeshttps://doi.org/10.3384/9789180750561openalex-snapshot
Composite Nanostructured Materials for Renewable Energy Applications
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