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Photoluminescence studies in bulk gallium antimonide

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.2210120117openalex-snapshot

Luminescence and photoconductivity of undoped p-GaSb

inferredcites →https://doi.org/10.1002/pssb.2220730124openalex-snapshot

Optical Studies of Free and Bound Excitonic States in GaSb Evidence for Deep A+‐Complexes

inferredcites →https://doi.org/10.1016/0022-0248(87)90408-8openalex-snapshot

Spectroscopic studies of shallow defects in MBE GaSb

inferredcites →https://doi.org/10.1016/0022-0248(94)90090-6openalex-snapshot

Growth of gallium antimonide by vertical Bridgman technique with planar crystal-melt interface

inferredcites →https://doi.org/10.1016/0022-3697(67)90193-xopenalex-snapshot

Growth properties of GaSb: The structure of the residual acceptor centres

inferredcites →https://doi.org/10.1016/0038-1101(65)90151-6openalex-snapshot

Physics of III–V compounds

inferredcites →https://doi.org/10.1016/0038-1101(66)90099-2openalex-snapshot

Quantum efficiency of GaAs electroluminescent diodes

inferredcites →https://doi.org/10.1016/0038-1101(93)90002-8openalex-snapshot

Gallium antimonide device related properties

inferredcites →https://doi.org/10.1016/0169-4332(92)90299-dopenalex-snapshot

Photoluminescence study of gallium antimonide crystals grown by vertical Bridgman method

inferredcites →https://doi.org/10.1016/s0022-0248(74)80062-xopenalex-snapshot

Gallium antimonide LPE growth from Ga-rich and Sh-rich solutions

inferredcites →https://doi.org/10.1063/1.343880openalex-snapshot

Photoluminescence study of gallium antimonide grown by liquid-phase epitaxy

inferredcites →https://doi.org/10.1103/physrevb.12.3258openalex-snapshot

Temperature dependence of the fundamental edge of germanium and zinc-blende-type semiconductors

inferredcites →https://doi.org/10.1103/physrevb.18.6944openalex-snapshot

Bound excitons at doubly ionizable acceptors in GaSb

inferredcites →https://doi.org/10.1117/12.636971openalex-snapshot

Growth and characterization of GaSb crystals: a promising optoelectronic material

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4813220openalex-extracted

Temperature Dependence on Surface Properties for Te-Doped GASB Crystals with N2-H2 Remote Plasma Nitridation

inferred← citeshttps://doi.org/10.1007/bf02706714openalex-snapshot

Growth and characterization of indium antimonide and gallium antimonide crystals

inferred← citeshttps://doi.org/10.1007/s13391-013-3028-zopenalex-snapshot

The optical and electrical properties of AP-MOVPE GaSb grown using TEGa and TMSb

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2012.08.026openalex-snapshot

AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation

inferred← citeshttps://doi.org/10.1016/j.physleta.2004.09.056openalex-snapshot

Gallium antisite defect and residual acceptors in undoped GaSb

inferred← citeshttps://doi.org/10.1016/j.tsf.2013.09.052openalex-snapshot

Sn doped GaSb grown by liquid phase epitaxy

inferred← citeshttps://doi.org/10.1016/j.vacuum.2024.113580openalex-snapshot

Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals

inferred← citeshttps://doi.org/10.1016/s0921-5107(00)00635-8openalex-snapshot

Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy

inferred← citeshttps://doi.org/10.1039/d2tc03443copenalex-snapshot

Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures

inferred← citeshttps://doi.org/10.1063/1.1482419openalex-snapshot

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

inferred← citeshttps://doi.org/10.1063/1.361220openalex-snapshot

Passivation of surface and bulk defects in p -GaSb by hydrogenated amorphous silicon treatment

inferred← citeshttps://doi.org/10.1063/1.362848openalex-snapshot

Nature of compensating luminescence centers in Te-diffused and -doped GaSb

inferred← citeshttps://doi.org/10.1063/1.363135openalex-snapshot

Carrier compensation and scattering mechanisms in p -GaSb

inferred← citeshttps://doi.org/10.1063/1.365356openalex-snapshot

The physics and technology of gallium antimonide: An emerging optoelectronic material

inferred← citeshttps://doi.org/10.1063/1.4954794openalex-snapshot

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1088/0268-1242/25/10/105003openalex-snapshot

Optical absorption and photoluminescence studies on heavily doped (Ga,Mn)Sb crystals

inferred← citeshttps://doi.org/10.1088/0953-8984/16/34/019openalex-snapshot

Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

inferred← citeshttps://doi.org/10.1088/1674-1056/23/1/017805openalex-snapshot

High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1088/1674-1056/25/7/077801openalex-snapshot

Thermally induced native defect transform in annealed GaSb

inferred← citeshttps://doi.org/10.1088/1674-1056/26/10/107801openalex-snapshot

N-type GaSb single crystals with high below-band gap transmission

inferred← citeshttps://doi.org/10.1088/1674-4926/38/4/043001openalex-snapshot

Electrical and optical property of annealed Te-doped GaSb

inferred← citeshttps://doi.org/10.1088/1674-4926/40/4/042101openalex-snapshot

Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

inferred← citeshttps://doi.org/10.1103/physrevb.64.075201openalex-snapshot

Defect study of Zn-dopedp-type gallium antimonide using positron lifetime spectroscopy

inferred← citeshttps://doi.org/10.1116/1.582161openalex-snapshot

Photoluminescence and Hall effect measurements of Te segregation in Te-doped GaSb grown in terrestrial and microgravity conditions

inferred← citeshttps://doi.org/10.13005/msri/120106openalex-snapshot

Preparation of Gallium Antimonide and its Characterization

inferred← citeshttps://doi.org/10.1557/proc-396-533openalex-snapshot

Effect of Hydrogenation on the Electrical and Optical Properties of GaSb

inferred← citeshttps://doi.org/10.1557/proc-406-537openalex-snapshot

Cathodoluminescence Spectroscopy For Evaluation Of Defect Passivation In GaSb

inferred← citeshttps://doi.org/10.1557/proc-588-187openalex-snapshot

Microstructural Characterization of Antimonide Based III-V Compounds and their Effect On Electro-Optical Properties of Substrate Materials and Devices

inferred← citeshttps://doi.org/10.1557/proc-588-239openalex-snapshot

Study of GaSb Junction Devices by Cathodoluminescence and Scanning Tunneling Spectroscopy

inferred← citeshttps://doi.org/10.1557/proc-692-h9.5.1openalex-snapshot

Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

inferred← citeshttps://doi.org/10.1557/proc-799-z5.29openalex-snapshot

Acceptors in undoped gallium antimonide

inferred← citeshttps://doi.org/10.4236/jmp.2022.134029openalex-snapshot

Ab Initio Calculation of Accurate Electronic and Transport Properties of Zinc Blende Gallium Antimonide (zb-GaSb)

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