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Temperature Dependence on Surface Properties for Te-Doped GASB Crystals with N2-H2 Remote Plasma Nitridation

https://doi.org/10.2139/ssrn.4813220
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Hydrogen ion-beam induced changes in the photoluminescence of GaSb/AlSb MQW structures
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Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition
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Aspects of native oxides etching on n-GaSb(100) surface
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Thermodiffusion or Soret effect: Historical review
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Oxidation related particles on GaSb (1 0 0) substrate surfaces
inferredcites →https://doi.org/10.1016/j.jlumin.2018.01.050openalex-extracted
Optical properties improvement of GaSb epilayers through defects compensation via doping
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Morphological studies of annealed GaAs and GaSb surfaces by micro-Raman spectroscopy and EDX microanalysis
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Nitridation of GaAs(1 0 0) substrates and Ga/GaAs systems studied by XPS spectroscopy
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Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment
inferredcites →https://doi.org/10.1021/jp401942popenalex-extracted
Sulfur Passivation of GaSb(100) Surfaces: Comparison of Aqueous and Alcoholic Sulfide Solutions Using Synchrotron Radiation Photoemission Spectroscopy
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Hydrogen treatment effect on shallow and deep centers in GaSb
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Band gaps of GaPN and GaAsN alloys
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Excitons bound to nitrogen clusters in GaAsN
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Strain effects on As and Sb segregates immersed in annealed GaAs and GaSb by Raman spectroscopy
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N 2 – H 2 remote plasma nitridation for GaAs surface passivation
inferredcites →https://doi.org/10.1063/1.1805197openalex-extracted
Increased terahertz emission from thermally treated GaSb
inferredcites →https://doi.org/10.1063/1.2162702openalex-extracted
Oxide-free InSb (100) surfaces by molecular hydrogen cleaning
inferredcites →https://doi.org/10.1063/1.2734081openalex-extracted
Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells
inferredcites →https://doi.org/10.1063/1.2749840openalex-extracted
GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation
inferredcites →https://doi.org/10.1063/1.346723openalex-extracted
I n s i t u cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas discharge
inferredcites →https://doi.org/10.1063/1.3495776openalex-extracted
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
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Photoluminescence of liquid-phase epitaxial Te-doped GaSb
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Electrical and photoluminescent properties of high-quality GaSb and AlGaSb layers grown from Sb-rich solutions by liquid-phase epitaxy
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Photoluminescence study of heavy doping effects in Te-doped GaSb
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The physics and technology of gallium antimonide: An emerging optoelectronic material
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Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation
inferredcites →https://doi.org/10.1063/1.4776656openalex-extracted
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
inferredcites →https://doi.org/10.1063/1.5002173openalex-extracted
Surface cleaning and pure nitridation of GaSb by in-situ plasma processing
inferredcites →https://doi.org/10.1080/10584587.2019.1675002openalex-extracted
Nanofiber Network Formation by 50 keV Ar+-Ion Irradiation on GaSb Surface
inferredcites →https://doi.org/10.1088/1674-4926/40/4/042101openalex-extracted
Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals
inferredcites →https://doi.org/10.1103/physrevlett.104.157402openalex-extracted
Spontaneous Formation of Surface Antisite Defects in the Stabilization of the Sb-Rich GaSb(001) Surface
inferredcites →https://doi.org/10.1111/j.1151-2916.1990.tb05142.xopenalex-extracted
Ductile‐Regime Machining of Germanium and Silicon
inferredcites →https://doi.org/10.1111/j.1151-2916.1990.tb06730.xopenalex-extracted
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inferredcites →https://doi.org/10.1116/1.586212openalex-extracted
GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen source
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HfO2/Al2O3/InGaAs MOSCAP Structures and InGaAs Plasma Nitridation Elaborated in a 300mm Pilot Line
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