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GaAs1−xSbx growth by OMVPE

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/bf02654908openalex-snapshot

The use of a metalorganic compound for the growth of InP-epitaxial layers

inferredcites →https://doi.org/10.1007/bf02654967openalex-snapshot

Growth of GaAs1−x Sbx by organometallic vapor phase epitaxy

inferredcites →https://doi.org/10.1007/bf02658905openalex-snapshot

Spinodal decomposition and clustering in III/V alloys

inferredcites →https://doi.org/10.1007/bf02670851openalex-snapshot

The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenic

inferredcites →https://doi.org/10.1016/0022-0248(82)90226-3openalex-snapshot

Miscibility gaps in quaternary III/V alloys

inferredcites →https://doi.org/10.1016/0022-0248(83)90002-7openalex-snapshot

AlxGa1−xAsySb1−y phase diagram

inferredcites →https://doi.org/10.1016/0022-0248(83)90156-2openalex-snapshot

OMVPE growth of GaAs1-xSbx: solid composition

inferredcites →https://doi.org/10.1016/0022-0248(83)90300-7openalex-snapshot

Thermodynamic aspects of organometallic vapor phase epitaxy

inferredcites →https://doi.org/10.1039/jr9540003381openalex-snapshot

Kinetics of the pyrolysis of trimethylarsine, tristrifluoromethylarsine, and related compounds

inferredcites →https://doi.org/10.1063/1.323841openalex-snapshot

Growth and properties of liquid-phase epitaxial GaAs1−xSbx

inferredcites →https://doi.org/10.1063/1.331719openalex-snapshot

Miscibility gaps and spinodal decomposition in III/V quaternary alloys of the type A x B y C1−x−y D

inferredcites →https://doi.org/10.1063/1.94799openalex-snapshot

Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium

inferredcites →https://doi.org/10.1063/1.94874openalex-snapshot

Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5

inferredcites →https://doi.org/10.1088/0034-4885/45/5/001openalex-snapshot

Epitaxy

inferredcites →https://doi.org/10.1109/jqe.1981.1071074openalex-snapshot

The GaAlAsSb quaternary and GaAlSb ternary alloys and their application to infrared detectors

inferredcites →https://doi.org/10.1143/jjap.16.1875openalex-snapshot

GaAs1-xSbx(0.3<x<0.9) Grown by Molecular Beam Epitaxy

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.6301148openalex-extracted

Analysis of Composition Dependent Structural and Vibrational Behavior of MBE Grown InAs1-x-ySbxPy Epilayers

inferred← citeshttps://doi.org/10.1007/978-1-4613-0317-6_7openalex-snapshot

Band Structures of Selected Semiconductors and Their Alloys

inferred← citeshttps://doi.org/10.1007/978-1-4613-0549-1_20openalex-snapshot

Technologies Based on Organometallic Vapor Phase Epitaxy

inferred← citeshttps://doi.org/10.1007/978-3-642-78127-8_2openalex-snapshot

Chemistry

inferred← citeshttps://doi.org/10.1007/978-3-662-07374-2_1openalex-snapshot

Gallium Triorganyls

inferred← citeshttps://doi.org/10.1007/978-94-009-0389-0_3openalex-snapshot

Comparison of ALE with other techniques

inferred← citeshttps://doi.org/10.1007/bf02649907openalex-snapshot

OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5

inferred← citeshttps://doi.org/10.1007/bf02652114openalex-snapshot

Non-hydride group V sources for OMVPE

inferred← citeshttps://doi.org/10.1007/bf02744852openalex-snapshot

Growth of III–V compounds by liquid phase epitaxy

inferred← citeshttps://doi.org/10.1016/0022-0248(84)90258-6openalex-snapshot

Thermodynamic aspects of OMVPE

inferred← citeshttps://doi.org/10.1016/0022-0248(86)90035-7openalex-snapshot

The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition

inferred← citeshttps://doi.org/10.1016/0022-0248(86)90274-5openalex-snapshot

MOVPE growth of InP using isobutylphosphine and tert-butylphosphine

inferred← citeshttps://doi.org/10.1016/0022-0248(86)90325-8openalex-snapshot

Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

inferred← citeshttps://doi.org/10.1016/0022-0248(86)90329-5openalex-snapshot

The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVD

inferred← citeshttps://doi.org/10.1016/0022-0248(86)90331-3openalex-snapshot

MOVPE growth of GaInAsSb

inferred← citeshttps://doi.org/10.1016/0022-0248(87)90219-3openalex-snapshot

The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1016/0022-0248(88)90372-7openalex-snapshot

Mass spectrometric study of the pyrolysis of organometallic precursors usable in GaAs vapor phase epitaxy

inferred← citeshttps://doi.org/10.1016/0022-0248(88)90373-9openalex-snapshot

Mass spectrometric study of the pyrolysis of organometallic precursors usable in GaAs vapor phase epitaxy

inferred← citeshttps://doi.org/10.1016/0022-0248(88)90501-5openalex-snapshot

Triethylarsenic and arsine as co-reagents: The novel manipulation of in-situ GaAs OMCVD growth chemistry to improve growth efficiency and safety

inferred← citeshttps://doi.org/10.1016/0022-0248(88)90507-6openalex-snapshot

OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx

inferred← citeshttps://doi.org/10.1016/0022-0248(89)90191-7openalex-snapshot

Ordered structures and metastable alloys grown by OMVPE

inferred← citeshttps://doi.org/10.1016/0022-0248(89)90305-9openalex-snapshot

Organometallic vapor phase epitaxial growth studies of GaP1−xSbx and InP1−xSbx

inferred← citeshttps://doi.org/10.1016/0022-0248(90)90892-oopenalex-snapshot

Decomposition mechanisms of trimethylarsine

inferred← citeshttps://doi.org/10.1016/0022-0248(91)90078-jopenalex-snapshot

Organometallic vapor-phase epitaxial growth of AlxGa1−xSb and AlxGa1−xAsySb1−y

inferred← citeshttps://doi.org/10.1016/0022-0248(92)90488-5openalex-snapshot

Growth of GaSb and GaAsSb in the single phase region by MOVPE

inferred← citeshttps://doi.org/10.1016/0022-0248(92)90489-6openalex-snapshot

Lattice-matched growth of InPSb on InAs by low-pressure plasma MOVPE

inferred← citeshttps://doi.org/10.1016/0022-0248(94)91032-4openalex-snapshot

Temperature dependence of solid-vapor compositional relation in epitaxial growth of GaAsxSb1-x by low-pressure metalorganic chemical vapor deposition

inferred← citeshttps://doi.org/10.1016/0022-328x(86)82002-2openalex-snapshot

Antimony

inferred← citeshttps://doi.org/10.1016/0040-6090(89)90861-4openalex-snapshot

Novel organometallic starting materials for group III–V semiconductor metal-organic chemical vapour deposition

inferred← citeshttps://doi.org/10.1016/0146-3535(86)90014-6openalex-snapshot

Epitaxial growth of InP and related alloys

inferred← citeshttps://doi.org/10.1016/0921-5107(88)90020-7openalex-snapshot

Characterization of GaAs1−ySby grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1016/b978-0-12-673840-7.50008-7openalex-snapshot

Source Molecules

inferred← citeshttps://doi.org/10.1016/b978-0-12-673840-7.50009-9openalex-snapshot

Thermodynamics

inferred← citeshttps://doi.org/10.1016/b978-0-12-673840-7.50013-0openalex-snapshot

Specific Materials

inferred← citeshttps://doi.org/10.1016/b978-0-444-63304-0.00003-2openalex-snapshot

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

inferred← citeshttps://doi.org/10.1016/b978-0-444-98801-0.50023-9openalex-snapshot

References

inferred← citeshttps://doi.org/10.1016/b978-008044640-0/50007-xopenalex-snapshot

Epitaxial structures

inferred← citeshttps://doi.org/10.1016/b978-012513745-4/50014-7openalex-snapshot

Gallium arsenide heterostructures

inferred← citeshttps://doi.org/10.1016/b978-012673842-1/50005-3openalex-snapshot

Thermodynamics

inferred← citeshttps://doi.org/10.1016/b978-012673842-1/50007-7openalex-snapshot

Source Molecules

inferred← citeshttps://doi.org/10.1016/b978-012673842-1/50011-9openalex-snapshot

Specific Materials

inferred← citeshttps://doi.org/10.1016/b978-081551442-8.50009-2openalex-snapshot

Metal Organic Chemical Vapor Deposition

inferred← citeshttps://doi.org/10.1016/j.apsusc.2023.158008openalex-snapshot

Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2006.10.012openalex-snapshot

Growth of strained GaAs1−ySby layers using metalorganic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2006.12.034openalex-snapshot

Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1−ySby films grown via metalorganic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1016/j.mseb.2026.119221openalex-snapshot

Structural morphology, dynamical and optical properties of InAs, InSb and InAs1-xSbx Epilayers

inferred← citeshttps://doi.org/10.1016/j.pcrysgrow.2016.04.019openalex-snapshot

III-V compound semiconductors: Growth and structures

inferred← citeshttps://doi.org/10.1016/s0080-8784(01)80212-xopenalex-snapshot

Chapter 2 Gallium arsenide heterostructures

inferred← citeshttps://doi.org/10.1016/s0080-8784(08)62930-0openalex-snapshot

Chapter 3 Organometallic Vapor-Phase Epitaxial Growth of III–V Semiconductors

inferred← citeshttps://doi.org/10.1016/s0927-796x(02)00002-5openalex-snapshot

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials

inferred← citeshttps://doi.org/10.1016/s0960-8974(98)00004-7openalex-snapshot

The growth of antimonides by MOVPE

inferred← citeshttps://doi.org/10.1051/rphysap:01987002208083700openalex-snapshot

Epitaxie en phase vapeur par pyrolyse d'organométalliques (EPVOM) des solutions solides ternaires Ga1-xAl xSb, Ga1-xInxSb et GaAsySb1-y sur substrats de GaSb

inferred← citeshttps://doi.org/10.1063/1.102499openalex-snapshot

Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1063/1.123428openalex-snapshot

Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors

inferred← citeshttps://doi.org/10.1063/1.1290740openalex-snapshot

Thermodynamic analysis of III–V semiconductor alloys grown by metalorganic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1063/1.2363237openalex-snapshot

Band lineup of pseudomorphic GaAs1−xSbx quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition

inferred← citeshttps://doi.org/10.1063/1.335299openalex-snapshot

Raman and photoluminescence spectra of GaAs1−xSbx

inferred← citeshttps://doi.org/10.1063/1.336296openalex-snapshot

Metalorganic chemical vapor deposition of III-V semiconductors

inferred← citeshttps://doi.org/10.1063/1.336981openalex-snapshot

Low-temperature phase diagram of the Ga-As-Sb system and liquid-phase-epitaxial growth of lattice-matched GaAsSb on (100) InAs substrates

inferred← citeshttps://doi.org/10.1063/1.341820openalex-snapshot

Organometallic vapor-phase epitaxial growth and characterization of the metastable alloy InP1−xSbx

inferred← citeshttps://doi.org/10.1063/1.346169openalex-snapshot

Optical absorption and emission of InP1−xSbx alloys

inferred← citeshttps://doi.org/10.1063/1.346781openalex-snapshot

Optical absorption and emission of GaP1−xSbx alloys

inferred← citeshttps://doi.org/10.1063/1.4892773openalex-snapshot

Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates

inferred← citeshttps://doi.org/10.1063/1.4937921openalex-snapshot

Conductance slope and curvature coefficient of InGaAs/GaAsSb heterojunctions at varying band alignments and its implication on digital and analog applications

inferred← citeshttps://doi.org/10.1063/1.4944801openalex-snapshot

Growth far from equilibrium: Examples from III-V semiconductors

inferred← citeshttps://doi.org/10.1063/1.96517openalex-snapshot

GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1063/1.96830openalex-snapshot

Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy

inferred← citeshttps://doi.org/10.1063/1.97666openalex-snapshot

Use of tertiarybutylarsine for GaAs growth

inferred← citeshttps://doi.org/10.1063/1.97857openalex-snapshot

Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP

inferred← citeshttps://doi.org/10.1063/1.99413openalex-snapshot

Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx

inferred← citeshttps://doi.org/10.1063/5.0159604openalex-snapshot

Machine learning for accelerated bandgap prediction in strain-engineered quaternary III–V semiconductors

inferred← citeshttps://doi.org/10.1103/physrevb.108.035202openalex-snapshot

Accurate first principles band gap predictions in strain engineered ternary III-V semiconductors

inferred← citeshttps://doi.org/10.1103/physrevb.33.8396openalex-snapshot

Raman scattering and optical-absorption studies of the metastable alloy system GaAsx Sb1−x

inferred← citeshttps://doi.org/10.1109/iciprm.2001.929115openalex-snapshot

Molecular beam epitaxial growth and characterization of GaAs/sub 0.5/Sb/sub 0.5/ layers on [111]B InP substrates

inferred← citeshttps://doi.org/10.1109/iciprm.2003.1205395openalex-snapshot

Growth and device performance of InP/GaAsSb HBTs

inferred← citeshttps://doi.org/10.1109/iciprm.2003.1205446openalex-snapshot

Growth of highly p-type doped GaAsSb:C for HBT application

inferred← citeshttps://doi.org/10.1109/iciprm.2004.1442724openalex-snapshot

GaAsSb-based HBTS grown by production MBE system

inferred← citeshttps://doi.org/10.1116/6.0005328openalex-snapshot

Vibrational studies of gas source molecular beam epitaxy grown InAs1−x−yPySbx epilayers by infrared reflectivity and Raman scattering

inferred← citeshttps://doi.org/10.1126/science.226.4675.623openalex-snapshot

Metalorganic Chemical Vapor Deposition of III-V Semiconductors

inferred← citeshttps://doi.org/10.1143/jjap.39.5751openalex-snapshot

Inclusion of Strain Effect in Miscibility Gap Calculations for III–V Semiconductors

inferred← citeshttps://doi.org/10.1285/i9788883050088p17openalex-snapshot

LP-MOVPE growth for high-speed electronic devices on InP

inferred← citeshttps://doi.org/10.1361/105497101770333054openalex-snapshot

A thermodynamic database of the Al-Ga-In-P-As-Sb-C-H system and its application in the design of an epitaxy process for III–V semiconductors

inferred← citeshttps://doi.org/10.1557/proc-144-169openalex-snapshot

Phase Separation and Atomic Ordering in Epitaxial Layers of III-V Compound Semiconductors

inferred← citeshttps://doi.org/10.1557/proc-145-171openalex-snapshot

Non-Hydride Group V Sources for Omvpe

inferred← citeshttps://doi.org/10.1557/proc-163-893openalex-snapshot

Ordering in III/V Alloys

inferred← citeshttps://doi.org/10.3390/cryst13091367openalex-snapshot

Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms

inferred← citeshttps://doi.org/10.6092/unibo/amsacta/489openalex-snapshot

InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE

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