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Analysis of Composition Dependent Structural and Vibrational Behavior of MBE Grown InAs1-x-ySbxPy Epilayers

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Large‐Diameter III–V on Si Substrates by the Smart Cut Process: The 200 mm InP Film on Si Substrate Example

inferredcites →https://doi.org/10.1007/bf02657927openalex-extracted

GaAs1−xSbx growth by OMVPE

inferredcites →https://doi.org/10.1007/bf02658905openalex-extracted

Spinodal decomposition and clustering in III/V alloys

inferredcites →https://doi.org/10.1007/s00339-022-06267-5openalex-extracted

Transfer matrix method for calculating UV–Vis reflectivity/transmission spectra to assess thickness of nanostructured zb CdSe and ZnSe films grown on GaAs (001)

inferredcites →https://doi.org/10.1007/s10853-023-08991-6openalex-extracted

Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties

inferredcites →https://doi.org/10.1007/s11082-016-0698-4openalex-extracted

Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

inferredcites →https://doi.org/10.1007/s11664-997-0023-xopenalex-extracted

MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters

inferredcites →https://doi.org/10.1016/0022-0248(92)90489-6openalex-extracted

Lattice-matched growth of InPSb on InAs by low-pressure plasma MOVPE

inferredcites →https://doi.org/10.1016/0022-0248(93)90101-2openalex-extracted

The growth of InP1-xSbx by metalorganic chemical vapor deposition

inferredcites →https://doi.org/10.1016/0168-583x(94)00434-xopenalex-extracted

Bond lengths at buried InAsP/InP interfaces in InP/InGaAs multi quantum wells

inferredcites →https://doi.org/10.1016/j.apsusc.2017.07.266openalex-extracted

Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms

inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.09.010openalex-extracted

InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

inferredcites →https://doi.org/10.1016/j.jcrysgro.2022.126618openalex-extracted

Low threshold InAs-based interband cascade lasers grown by MBE

inferredcites →https://doi.org/10.1016/j.jlumin.2016.06.020openalex-extracted

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

inferredcites →https://doi.org/10.1016/j.jlumin.2024.120856openalex-extracted

Room-temperature electroluminescence in the InAsSbP/InAs0.95Sb0.05/InAsSbP single quantum well

inferredcites →https://doi.org/10.1016/s0960-8974(98)00004-7openalex-extracted

The growth of antimonides by MOVPE

inferredcites →https://doi.org/10.1021/acs.chemrev.5b00608openalex-extracted

Nano-Bioelectronics

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P K-Edge XANES Calculations of Mineral Standards: Exploring the Potential of Theoretical Methods in the Analysis of Phosphorus Speciation

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Nanocrystalline Semiconductors: Synthesis, Properties, and Perspectives

inferredcites →https://doi.org/10.1021/jacs.9b12350openalex-extracted

Scalable Synthesis of InAs Quantum Dots Mediated through Indium Redox Chemistry

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Indium arsenide quantum dots: an alternative to lead-based infrared emitting nanomaterials

inferredcites →https://doi.org/10.1039/d4cp04629copenalex-extracted

Multiferroicity in two-dimensional III–V indium pnictide optoelectronic materials

inferredcites →https://doi.org/10.1063/1.100104openalex-extracted

Raman scattering in InAs1−xSbx grown by organometallic vapor phase epitaxy

inferredcites →https://doi.org/10.1063/1.116949openalex-extracted

Raman spectra of indium nitride thin films grown by microwave-excited metalorganic vapor phase epitaxy on (0001) sapphire substrates

inferredcites →https://doi.org/10.1063/1.122053openalex-extracted

Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector

inferredcites →https://doi.org/10.1063/1.1368156openalex-extracted

Band parameters for III–V compound semiconductors and their alloys

inferredcites →https://doi.org/10.1063/1.331719openalex-extracted

Miscibility gaps and spinodal decomposition in III/V quaternary alloys of the type A x B y C1−x−y D

inferredcites →https://doi.org/10.1063/1.3436592openalex-extracted

Amorphous InSb: Longer bonds yet higher density

inferredcites →https://doi.org/10.1063/5.0223040openalex-extracted

InP-based strain engineered InAs(Sb)/InAsPSb multiple quantum wells with tunable emission and high internal quantum efficiency enabled by Sb incorporation

inferredcites →https://doi.org/10.1088/0022-3719/11/20/011openalex-extracted

The lattice dynamics of indium pnictides

inferredcites →https://doi.org/10.1088/0022-3719/8/13/011openalex-extracted

Phonon dispersion curves in indium phosphide

inferredcites →https://doi.org/10.1088/0022-3727/44/8/085405openalex-extracted

Raman scattering in InAsxSbyP1−x−y alloys grown by gas source MBE

inferredcites →https://doi.org/10.1103/physrevb.1.4005openalex-extracted

Elastic Properties of ZnS Structure Semiconductors

inferredcites →https://doi.org/10.1103/physrevb.3.1268openalex-extracted

Lattice Dynamics of Grey Tin and Indium Antimonide

inferredcites →https://doi.org/10.1103/physrevb.41.12129openalex-extracted

Pressure-dependent phonon properties of III-V compound semiconductors

inferredcites →https://doi.org/10.1103/physrevb.73.165122openalex-extracted

Density functional theory for disordered alloys with short-range order: Systematic inclusion of charge-correlation effects

inferredcites →https://doi.org/10.1103/physrevb.77.073204openalex-extracted

Comparison of the atomic structure of InP amorphized by electronic or nuclear ion energy-loss processes

inferredcites →https://doi.org/10.1109/csics.2006.319918openalex-extracted

Indium Antimonide Based Technology for RF Applications

inferredcites →https://doi.org/10.1117/12.2521907openalex-extracted

Recombination processes in InAs/InAsSb type II strained layer superlattice MWIR nBn detectors

inferredcites →https://doi.org/10.1143/jjap.21.l667openalex-extracted

LPE Growth of In1-xGaxAs1-yPy with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates

inferredcites →https://doi.org/10.23919/eumc58039.2023.10290293openalex-extracted

RF Performances and De-Embedding Techniques of Passive Devices in 3D Homogeneous Integration at Sub-THz

inferredcites →https://doi.org/10.23919/eumic61603.2024.10732074openalex-extracted

G-Band Large-Signal Characterization of InP/GaAsSb DHBTs with Record 38% Power Added Efficiency at 170 GHz

inferredcites →https://doi.org/10.3390/bios13110983openalex-extracted

Continuous Real-Time Detection of Serotonin Using an Aptamer-Based Electrochemical Biosensor

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Extended Review Concerning the Integration of Electrochemical Biosensors into Modern IoT and Wearable Devices

inferredcites →https://doi.org/10.3390/su17031339openalex-extracted

Indium Phosphide Semiconductor Technology for Next-Generation Communication Systems: Sustainability and Material Considerations

inferredcites →https://doi.org/10.1103/physrevb.84.174203openalex-snapshot

Infrared reflectance and transmission spectra in II-VI alloys and superlattices

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.3390/ma19122575openalex-snapshot

Simulating Model Dielectric Functions of Dilute GaAs1-xNx in the Far-Infrared to Ultraviolet Wavelength Regimes

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