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Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/b978-0-12-381337-4.00003-6openalex-snapshot
Quantum Dot Infrared Photodetectors
inferredcites →https://doi.org/10.1016/c2009-0-22307-5openalex-snapshot
Quantum Semiconductor Structures
inferredcites →https://doi.org/10.1016/j.jcrysgro.2009.11.067openalex-snapshot
Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures
inferredcites →https://doi.org/10.1016/j.physb.2012.07.039openalex-snapshot
Wetting layers effect on InAs/GaAs quantum dots
inferredcites →https://doi.org/10.1016/j.tsf.2013.11.010openalex-snapshot
Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer
inferredcites →https://doi.org/10.1016/s0022-0248(02)02506-xopenalex-snapshot
InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gain
inferredcites →https://doi.org/10.1038/ncomms4299openalex-snapshot
Optophononics with coupled quantum dots
inferredcites →https://doi.org/10.1063/1.2218825openalex-snapshot
Control of subband energy levels of quantum dots using InGaAs gradient composition strain-reducing layer
inferredcites →https://doi.org/10.1063/1.2904705openalex-snapshot
Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer
inferredcites →https://doi.org/10.1063/1.2918836openalex-snapshot
Natural quantum dots in the InAs∕GaAs wetting layer
inferredcites →https://doi.org/10.1063/1.363248openalex-snapshot
Stacking InAs islands and GaAs layers: Strongly modulated one-dimensional electronic systems
inferredcites →https://doi.org/10.1063/1.3657142openalex-snapshot
High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping
inferredcites →https://doi.org/10.1063/1.4773373openalex-snapshot
A multicolor, broadband (5–20 μm), quaternary-capped InAs/GaAs quantum dot infrared photodetector
inferredcites →https://doi.org/10.1103/physrevb.62.16671openalex-snapshot
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
inferredcites →https://doi.org/10.1103/physrevlett.76.952openalex-snapshot
Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs
inferredcites →https://doi.org/10.1109/3.958360openalex-snapshot
Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
inferredcites →https://doi.org/10.1109/68.849053openalex-snapshot
Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
inferredcites →https://doi.org/10.1109/68.883809openalex-snapshot
Low chirp observed in directly modulated quantum dot lasers
inferredcites →https://doi.org/10.1109/lpt.2003.822488openalex-snapshot
IEEE Photonics Technology Letters Information for authors
inferredcites →https://doi.org/10.1109/lpt.2004.823690openalex-snapshot
Contribution of Field-Assisted Tunneling Emission to Dark Current in InAs–GaAs Quantum Dot Infrared Photodetectors
inferredcites →https://doi.org/10.1109/ted.2011.2140374openalex-snapshot
Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave Infrared
inferredcites →https://doi.org/10.1116/1.1461370openalex-snapshot
Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier
inferredcites →https://doi.org/10.1143/jjap.24.l95openalex-snapshot
Theoretical Gain of Quantum-Well Wire Lasers
inferredcites →https://doi.org/10.1166/jnn.2011.3529openalex-snapshot
Thermal Stability of the Peak Emission Wavelength in Multilayer InAs/GaAs QDs Capped with a Combination Capping of InAlGaAs and GaAs
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4122875openalex-extracted
The Depth Investigation on the Formation of Strain Reduced In0.54al0.34ga0.12as Layer of Vertically Coupled Qds Arrays for O-Band Telecom Lasers
inferred← citeshttps://doi.org/10.1016/b978-0-08-102795-0.00005-0openalex-snapshot
High-speed InAs quantum dot photodetectors for data/telecom
inferred← citeshttps://doi.org/10.1016/j.actamat.2015.10.048openalex-snapshot
Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness
inferred← citeshttps://doi.org/10.1016/j.infrared.2019.103079openalex-snapshot
Incorporation of quaternary (In0.22Al0.22Ga0.56As) capping in p-i-p QDIPs for efficient minimization of hole-assisted dark current
inferred← citeshttps://doi.org/10.1016/j.jallcom.2017.07.215openalex-snapshot
Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.170617openalex-snapshot
Formation of strain reduced In0.54Al0.34Ga0.12As layer of vertically coupled QDs arrays for O-band telecom single photon sources
inferred← citeshttps://doi.org/10.1016/j.jlumin.2019.02.022openalex-snapshot
Higher performance optoelectronic devices with In0.21Al0.21Ga0.58As/In0.15Ga0.85As capping of III-V quantum dots
inferred← citeshttps://doi.org/10.1016/j.optmat.2020.110292openalex-snapshot
Tuning the structural and optical characteristics of heterogeneously coupled InAs Submonolayer (SML) quantum dots grown on InAs Stranski-Krastanov (SK) quantum dots
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00054openalex-snapshot
In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing
inferred← citeshttps://doi.org/10.1021/acsanm.8b01170openalex-snapshot
Impact of an InxGa1–xAs Capping Layer in Impeding Indium Desorption from Vertically Coupled InAs/GaAs Quantum Dot Interfaces
inferred← citeshttps://doi.org/10.1038/s41598-020-68461-wopenalex-snapshot
Infrared photodetector sensitized by InAs quantum dots embedded near an Al0.3Ga0.7As/GaAs heterointerface
inferred← citeshttps://doi.org/10.1088/1361-6641/ab3487openalex-snapshot
Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics
inferred← citeshttps://doi.org/10.1109/tnano.2019.2958930openalex-snapshot
Vertically Coupled Hybrid InAs Sub-Monolayer on InAs Stranski–Krastanov Quantum Dot Heterostructure: Toward Next Generation Broadband IR Detection
inferred← citeshttps://doi.org/10.1117/12.2305293openalex-snapshot
Modelling of dark current and noise dependence on capping thickness in quantum dots based infrared photodetectors
inferred← citeshttps://doi.org/10.1117/12.2508615openalex-snapshot
Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector
inferred← citeshttps://doi.org/10.1117/12.2508669openalex-snapshot
Impact of ternary capping on p-i-p InAs/GaAs quantum-dot infrared photodetectors
inferred← citeshttps://doi.org/10.4028/www.scientific.net/ssp.284.182openalex-snapshot
Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs
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