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The Depth Investigation on the Formation of Strain Reduced In0.54al0.34ga0.12as Layer of Vertically Coupled Qds Arrays for O-Band Telecom Lasers

https://doi.org/10.2139/ssrn.4122875
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inferredcites →https://doi.org/10.1007/978-981-10-4334-5openalex-extracted
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
inferredcites →https://doi.org/10.1007/s00339-014-8854-9openalex-extracted
Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
inferredcites →https://doi.org/10.1007/s11671-006-9014-8openalex-extracted
Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
inferredcites →https://doi.org/10.1016/j.jallcom.2017.07.215openalex-extracted
Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure
inferredcites →https://doi.org/10.1016/j.jallcom.2019.06.286openalex-extracted
High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model
inferredcites →https://doi.org/10.1016/j.jcrysgro.2009.11.067openalex-extracted
Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures
inferredcites →https://doi.org/10.1016/j.jlumin.2014.10.013openalex-extracted
The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
inferredcites →https://doi.org/10.1016/j.jpcs.2021.110360openalex-extracted
Indium segregation and In–Ga inter-diffusion effects on the photoluminescence measurements and nonlinear optical properties in lens-shaped InxGa1-xAs/GaAs quantum dots
inferredcites →https://doi.org/10.1016/j.mssp.2018.10.024openalex-extracted
AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots
inferredcites →https://doi.org/10.1016/j.scriptamat.2015.03.013openalex-extracted
3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs
inferredcites →https://doi.org/10.1016/j.spmi.2014.03.024openalex-extracted
Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer
inferredcites →https://doi.org/10.1016/j.tsf.2004.06.055openalex-extracted
Strain-interactions between InAs/GaAs quantum dot layers
inferredcites →https://doi.org/10.1016/j.tsf.2014.07.010openalex-extracted
One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
inferredcites →https://doi.org/10.1017/s1431927616012642openalex-extracted
Modern Focused-Ion-Beam-Based Site-Specific Specimen Preparation for Atom Probe Tomography
inferredcites →https://doi.org/10.1021/acsnano.9b09715openalex-extracted
Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes
inferredcites →https://doi.org/10.1063/1.1339210openalex-extracted
Quantum dot solar cells
inferredcites →https://doi.org/10.1063/1.1368156openalex-extracted
Band parameters for III–V compound semiconductors and their alloys
inferredcites →https://doi.org/10.1063/1.1482421openalex-extracted
Characterization of rapid-thermal-annealed InAs/In0.15Ga0.85As dots-in-well heterostructure using double crystal x-ray diffraction and photoluminescence
inferredcites →https://doi.org/10.1063/1.2163009openalex-extracted
Investigation of indium distribution in InGaAs∕GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering
inferredcites →https://doi.org/10.1063/1.2709758openalex-extracted
Atom probe tomography
inferredcites →https://doi.org/10.1063/1.3264967openalex-extracted
Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence
inferredcites →https://doi.org/10.1063/1.3468520openalex-extracted
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
inferredcites →https://doi.org/10.1063/1.371111openalex-extracted
Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
inferredcites →https://doi.org/10.1063/1.4892826openalex-extracted
Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure
inferredcites →https://doi.org/10.1063/1.4904952openalex-extracted
Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires
inferredcites →https://doi.org/10.1063/1.4973335openalex-extracted
Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states
inferredcites →https://doi.org/10.1088/0957-4484/27/30/305402openalex-extracted
Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography
inferredcites →https://doi.org/10.1088/0965-0393/4/4/002openalex-extracted
Material parameters of quaternary III - V semiconductors for multilayer mirrors at wavelength
inferredcites →https://doi.org/10.1088/1361-6641/ab3487openalex-extracted
Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics
inferredcites →https://doi.org/10.1088/1742-6596/245/1/012065openalex-extracted
Control of Strain in GaSbAs/InAs/GaAs Quantum Dots
inferredcites →https://doi.org/10.1103/physrevb.71.115328openalex-extracted
Exciton dephasing via phonon interactions in InAs quantum dots: Dependence on quantum confinement
inferredcites →https://doi.org/10.1103/physrevb.73.235205openalex-extracted
Statistical model applied to AxByC1−x−yD quaternary alloys: Bond lengths and energy gaps of AlxGayIn1−x−yX ( X=As , P, or N) systems
inferredcites →https://doi.org/10.1103/physrevb.82.073201openalex-extracted
Deviations from Vegard’s law in ternary III-V alloys
inferredcites →https://doi.org/10.1109/iscspc.2003.1354452openalex-extracted
Quantum dots infrared photodetectors
inferredcites →https://doi.org/10.1109/pvsc.2014.6925095openalex-extracted
Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition
inferredcites →https://doi.org/10.1109/pvsc.2015.7355809openalex-extracted
Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots
inferredcites →https://doi.org/10.1116/1.4894461openalex-extracted
Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
inferredcites →https://doi.org/10.1146/annurev.matsci.34.082103.133534openalex-extracted
SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications
inferredcites →https://doi.org/10.1166/jnn.2011.3529openalex-extracted
Thermal Stability of the Peak Emission Wavelength in Multilayer InAs/GaAs QDs Capped with a Combination Capping of InAlGaAs and GaAs
inferredcites →https://doi.org/10.1166/jno.2017.2121openalex-extracted
Impact of Dot Size on Dynamical Characteristics of InAs/GaAs Quantum Dot Lasers
inferredcites →https://doi.org/10.1590/s0103-97331999000400025openalex-extracted
Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
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