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Behavior of GaSb (100) and InSb (100) surfaces in the presence of H 2 O 2 in acidic and basic cleaning solutions
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Outgoing claims: the papers this work cites, builds on, or argues with.
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Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eV
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Simultaneous HPLC Determination of Peroxyacetic Acid and Hydrogen Peroxide
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Behavior of a GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions
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Effect of ion bombardment on the chemical reactivity of gallium arsenide(100)
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GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide
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Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning
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High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications
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Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission
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High Electron Mobility InSb Films Prepared by Source-Temperature-Programed Evaporation Method
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Control of SC1 Wet Cleaning Process for Nano-Scale Gate Oxide Integrity
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Wet Etching Characterization of InSb for Thermal Imaging Applications
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Surface Chemistry of III-V Semiconductors After Wet Etching with HCl and H2O2
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Removal of Metal and Organic Contaminants from Silicon Substrates Using Electrolysis‐Ionized Water Containing Ammonium Chloride
inferredcites →https://doi.org/10.1149/1.2096946openalex-snapshot
Chemical Cleaning of GaSb (1,0,0) Surfaces
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Electrochemical and Chemical Behavior of InSb Surfaces
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Processing and Characterization of GaSb/High-k Dielectric Interfaces
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Surface Analysis of InSb by X-Ray Photoelectron Spectroscopy (XPS)
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Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers
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Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment
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Perry's chemical engineers' handbook
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Study of wet etching on long-wavelength InAs/GaSb Type-II superlattices
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Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals
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Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water
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Modern scientific and practical approaches to the production of substrates from semiconductor compounds А3В5. Review
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