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Effect of temperature and carrier gas on the properties of thick InxAl1-x N layer

https://doi.org/10.1016/j.apsusc.2018.10.231

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.200303428openalex-snapshot

GaN-based epitaxy on silicon: stress measurements

inferredcites →https://doi.org/10.1002/pssa.201600441openalex-snapshot

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

inferredcites →https://doi.org/10.1007/bf00615975openalex-snapshot

Hydrogen in crystalline semiconductors

inferredcites →https://doi.org/10.1016/0001-6160(57)90122-0openalex-snapshot

Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe

inferredcites →https://doi.org/10.1016/j.apsusc.2018.07.009openalex-snapshot

Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems

inferredcites →https://doi.org/10.1016/j.jcrysgro.2007.05.058openalex-snapshot

The growth mechanism of GaN with different H2/N2 carrier gas ratios

inferredcites →https://doi.org/10.1016/j.jcrysgro.2009.04.004openalex-snapshot

The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

inferredcites →https://doi.org/10.1016/j.jcrysgro.2010.10.108openalex-snapshot

The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy

inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.06.051openalex-snapshot

The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy

inferredcites →https://doi.org/10.1016/j.jcrysgro.2013.07.034openalex-snapshot

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

inferredcites →https://doi.org/10.1016/j.jcrysgro.2013.09.046openalex-snapshot

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

inferredcites →https://doi.org/10.1016/j.jcrysgro.2013.10.006openalex-snapshot

Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating

inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.11.013openalex-snapshot

Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas

inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.11.108openalex-snapshot

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers

inferredcites →https://doi.org/10.1016/s0022-0248(98)00240-1openalex-snapshot

Dislocation generation in GaN heteroepitaxy

inferredcites →https://doi.org/10.1016/s0022-0248(98)00284-xopenalex-snapshot

Impact of defects on the carrier transport in GaN

inferredcites →https://doi.org/10.1038/srep26600openalex-snapshot

The immiscibility of InAlN ternary alloy

inferredcites →https://doi.org/10.1038/srep44390openalex-snapshot

Direct observation of spinodal decomposition phenomena in InAlN alloys during in-situ STEM heating

inferredcites →https://doi.org/10.1039/c4tc00480aopenalex-snapshot

Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

inferredcites →https://doi.org/10.1039/c5ce01401hopenalex-snapshot

Defect formation mechanism and quality improvement of InAlN epilayers grown by metal–organic chemical vapor deposition

inferredcites →https://doi.org/10.1063/1.108842openalex-snapshot

Dislocations and strain relief in compositionally graded layers

inferredcites →https://doi.org/10.1063/1.110199openalex-snapshot

Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

inferredcites →https://doi.org/10.1063/1.116756openalex-snapshot

Spatial distribution of the luminescence in GaN thin films

inferredcites →https://doi.org/10.1063/1.118322openalex-snapshot

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

inferredcites →https://doi.org/10.1063/1.122012openalex-snapshot

The role of dislocation scattering in n-type GaN films

inferredcites →https://doi.org/10.1063/1.1319966openalex-snapshot

Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers

inferredcites →https://doi.org/10.1063/1.1565687openalex-snapshot

Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy

inferredcites →https://doi.org/10.1063/1.1623009openalex-snapshot

On the nitrogen vacancy in GaN

inferredcites →https://doi.org/10.1063/1.1947367openalex-snapshot

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

inferredcites →https://doi.org/10.1063/1.2213509openalex-snapshot

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

inferredcites →https://doi.org/10.1063/1.3021076openalex-snapshot

Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N

inferredcites →https://doi.org/10.1063/1.3155798openalex-snapshot

When group-III nitrides go infrared: New properties and perspectives

inferredcites →https://doi.org/10.1063/1.3187540openalex-snapshot

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

inferredcites →https://doi.org/10.1063/1.3305397openalex-snapshot

Strain effects on InxAl1−xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition

inferredcites →https://doi.org/10.1063/1.3319557openalex-snapshot

Evaluation of threading dislocation densities in In- and N-face InN

inferredcites →https://doi.org/10.1063/1.3525713openalex-snapshot

High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures

inferredcites →https://doi.org/10.1063/1.366114openalex-snapshot

Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN

inferredcites →https://doi.org/10.1063/1.366235openalex-snapshot

Mosaic structure in epitaxial thin films having large lattice mismatch

inferredcites →https://doi.org/10.1063/1.4872226openalex-snapshot

Lattice-matched AlInN in the initial stage of growth

inferredcites →https://doi.org/10.1063/1.4937902openalex-snapshot

Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

inferredcites →https://doi.org/10.1080/14786440808520491openalex-snapshot

LXXXVII. Theory of dislocations in germanium

inferredcites →https://doi.org/10.1088/0268-1242/17/6/307openalex-snapshot

InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

inferredcites →https://doi.org/10.1088/0268-1242/26/1/014041openalex-snapshot

Stranski–Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures

inferredcites →https://doi.org/10.1088/0268-1242/29/3/035015openalex-snapshot

Proposal of normally-off InN-channel high-electron mobility transistors

inferredcites →https://doi.org/10.1103/physrevb.58.12571openalex-snapshot

Deep acceptors trapped at threading-edge dislocations in GaN

inferredcites →https://doi.org/10.1103/physrevb.79.041306openalex-snapshot

Impact of hydrogen on indium incorporation at m -plane and c -plane In0.25Ga0.75N surfaces: First-principles calculations

inferredcites →https://doi.org/10.1109/55.962646openalex-snapshot

Power electronics on InAlN/(In)GaN: Prospect for a record performance

inferredcites →https://doi.org/10.1109/led.2012.2196751openalex-snapshot

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

inferredcites →https://doi.org/10.1109/ted.2010.2101602openalex-snapshot

Proposal of High-Electron Mobility Transistors With Strained InN Channel

inferredcites →https://doi.org/10.1143/apex.5.044101openalex-snapshot

N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors

inferredcites →https://doi.org/10.1143/jjap.37.4460openalex-snapshot

The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

inferredcites →https://doi.org/10.1143/jjap.45.l539openalex-snapshot

Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy

inferredcites →https://doi.org/10.1149/1.2426674openalex-snapshot

Thermal Expansion Coefficients and Lattice Parameters between 10° and 65°C in the System GaP-GaAs

inferredcites →https://doi.org/10.7567/apex.11.051001openalex-snapshot

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched toc-plane GaN grown on sapphire

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4797068openalex-extracted

The Preparation of Inxal1-Xn Thin Films and Investigation of the Electroluminescence Properties of the Uv-Violet Bidirectional Drive P-Gan/N-In0.27al0.73n Heterojunction Light-Emitting Diode

inferred← citeshttps://doi.org/10.1002/lpor.202300400openalex-snapshot

Demonstration of Weak Polarization Electric Field III‐N LEDs based on Polar Plane

inferred← citeshttps://doi.org/10.1002/pssa.202000197openalex-snapshot

Growth and Properties of N‐Polar InN/InAlN Heterostructures

inferred← citeshttps://doi.org/10.1016/j.apsusc.2019.144086openalex-snapshot

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

inferred← citeshttps://doi.org/10.1016/j.jallcom.2021.162123openalex-snapshot

InAl(Ga)N: MOCVD thermodynamics and strain distribution

inferred← citeshttps://doi.org/10.1016/j.jallcom.2024.175193openalex-snapshot

Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer

inferred← citeshttps://doi.org/10.1038/s41377-026-02359-6openalex-snapshot

Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement

inferred← citeshttps://doi.org/10.1039/c9ce01549copenalex-snapshot

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

inferred← citeshttps://doi.org/10.1039/d2na00456aopenalex-snapshot

Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy

inferred← citeshttps://doi.org/10.1063/1.5079756openalex-snapshot

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

inferred← citeshttps://doi.org/10.3390/nano12193496openalex-snapshot

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD

inferred← citeshttps://doi.org/10.7567/1882-0786/aaef41openalex-snapshot

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

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