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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssa.201001177openalex-snapshot
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.3374331openalex-snapshot
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
inferredcites →https://doi.org/10.1109/16.3339openalex-snapshot
Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
inferredcites →https://doi.org/10.1109/16.481722openalex-snapshot
Delay time analysis of submicron InP-based HEMT's
inferredcites →https://doi.org/10.1109/55.962646openalex-snapshot
Power electronics on InAlN/(In)GaN: Prospect for a record performance
inferredcites →https://doi.org/10.1109/iedm.2011.6131548openalex-snapshot
fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm
inferredcites →https://doi.org/10.1109/iedm.2011.6131582openalex-snapshot
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency
inferredcites →https://doi.org/10.1109/led.2008.2000949openalex-snapshot
AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition
inferredcites →https://doi.org/10.1109/led.2010.2072771openalex-snapshot
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
inferredcites →https://doi.org/10.1109/led.2010.2095494openalex-snapshot
Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio
inferredcites →https://doi.org/10.1109/led.2011.2132751openalex-snapshot
245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment
inferredcites →https://doi.org/10.1109/led.2011.2147753openalex-snapshot
210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation
inferredcites →https://doi.org/10.1109/led.2011.2158288openalex-snapshot
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
inferredcites →https://doi.org/10.1109/led.2011.2162087openalex-snapshot
Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz
inferredcites →https://doi.org/10.1109/led.2011.2164613openalex-snapshot
300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
inferredcites →https://doi.org/10.1109/led.2012.2186116openalex-snapshot
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$
inferredcites →https://doi.org/10.1109/led.2012.2186628openalex-snapshot
Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts
inferredcites →https://doi.org/10.1109/proc.1969.7509openalex-snapshot
On the definition of the cutoff frequency fT
inferredcites →https://doi.org/10.1143/apex.4.096502openalex-snapshot
Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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The Preparation of Inxal1-Xn Thin Films and Investigation of the Electroluminescence Properties of the Uv-Violet Bidirectional Drive P-Gan/N-In0.27al0.73n Heterojunction Light-Emitting Diode
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Terahertz Properties and Applications of GaN
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inferred← citeshttps://doi.org/10.1002/pssb.201451493openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/978-3-031-73816-6_64openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/978-981-15-3172-9_33openalex-snapshot
GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review
inferred← citeshttps://doi.org/10.1007/s00339-014-8403-6openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s00339-024-07882-0openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s10853-025-11237-2openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s11182-018-1511-6openalex-snapshot
Physical Properties of Solid Solutions InxAl1–xN
inferred← citeshttps://doi.org/10.1007/s11182-018-1555-7openalex-snapshot
Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds
inferred← citeshttps://doi.org/10.1007/s11432-024-4460-yopenalex-snapshot
High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
inferred← citeshttps://doi.org/10.1007/s11432-025-4572-5openalex-snapshot
High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
inferred← citeshttps://doi.org/10.1007/s11664-019-07731-4openalex-snapshot
Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications
inferred← citeshttps://doi.org/10.1016/b978-0-12-815468-7.00001-9openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/b978-0-323-90761-3.00008-5openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/bs.semsem.2019.08.010openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.apsusc.2018.10.231openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.apsusc.2021.149132openalex-snapshot
Ge-GaN deposition: An assistant kMC model
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inferred← citeshttps://doi.org/10.1016/j.jallcom.2025.179922openalex-snapshot
Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment
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High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.jsamd.2017.08.004openalex-snapshot
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Room temperature photon induced electrical tuning of intersubband transition in GaN HEMT for terahertz applications
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Research on the effect of gate etching depth on the performance of GaN-based HEMTs under medium source-drain etching
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Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate
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Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE
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In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
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inferred← citeshttps://doi.org/10.1016/j.sse.2017.02.002openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.sse.2017.07.015openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.sse.2020.107807openalex-snapshot
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Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current
inferred← citeshttps://doi.org/10.1016/j.sse.2022.108482openalex-snapshot
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Low resistive InGaN film grown by metalorganic chemical vapor deposition
inferred← citeshttps://doi.org/10.1021/acsami.3c15303openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/s41467-018-04354-xopenalex-snapshot
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Electronic metadevices for terahertz applications
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inferred← citeshttps://doi.org/10.1049/el.2013.2506openalex-snapshot
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inferred← citeshttps://doi.org/10.1049/el.2015.3245openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4801940openalex-snapshot
Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion
inferred← citeshttps://doi.org/10.1063/1.4808241openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4820763openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4827190openalex-snapshot
Scaling performance of Ga2O3/GaN nanowire field effect transistor
inferred← citeshttps://doi.org/10.1063/1.4867508openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4871802openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4873975openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4875916openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4879800openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4894627openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4895105openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4906287openalex-snapshot
Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier
inferred← citeshttps://doi.org/10.1063/1.4906900openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4907800openalex-snapshot
Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices
inferred← citeshttps://doi.org/10.1063/1.4919846openalex-snapshot
Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen
inferred← citeshttps://doi.org/10.1063/1.4933181openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4938745openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4948331openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4949489openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4961009openalex-snapshot
Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture
inferred← citeshttps://doi.org/10.1063/1.4962856openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4963919openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4972225openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4975702openalex-snapshot
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
inferred← citeshttps://doi.org/10.1063/1.5024803openalex-snapshot
Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs
inferred← citeshttps://doi.org/10.1063/1.5030992openalex-snapshot
Alloy disorder limited mobility of InGaN two-dimensional electron gas
inferred← citeshttps://doi.org/10.1063/1.5032102openalex-snapshot
Comparison of unit cell coupling for grating-gate and high electron mobility transistor array THz resonant absorbers
inferred← citeshttps://doi.org/10.1063/1.5089671openalex-snapshot
Band gap bowing for high In content InAlN films
inferred← citeshttps://doi.org/10.1063/1.5090528openalex-snapshot
Record combination fmax · Vbr of 25 THz·V in AlGaN/GaN HEMT with plasma treatment
inferred← citeshttps://doi.org/10.1063/1.5090874openalex-snapshot
Achieving high electron mobility in AlInGaN/GaN heterostructures: The correlation between thermodynamic stability and electron transport properties
inferred← citeshttps://doi.org/10.1063/1.5142696openalex-snapshot
Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates
inferred← citeshttps://doi.org/10.1063/5.0031482openalex-snapshot
Toward high voltage radio frequency devices in β-Ga2O3
inferred← citeshttps://doi.org/10.1063/5.0079359openalex-snapshot
High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure
inferred← citeshttps://doi.org/10.1063/5.0080320openalex-snapshot
Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates
inferred← citeshttps://doi.org/10.1063/5.0083302openalex-snapshot
Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV
inferred← citeshttps://doi.org/10.1063/5.0196746openalex-snapshot
Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs
inferred← citeshttps://doi.org/10.1063/5.0258504openalex-snapshot
Record-high electron mobility at near pinch-off in N-polar GaN HEMT structures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0260480openalex-snapshot
High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation
inferred← citeshttps://doi.org/10.1080/21681724.2019.1636295openalex-snapshot
Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications
inferred← citeshttps://doi.org/10.1088/0022-3727/47/13/135108openalex-snapshot
Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate
inferred← citeshttps://doi.org/10.1088/0022-3727/49/39/393001openalex-snapshot
Insulated gate and surface passivation structures for GaN-based power transistors
inferred← citeshttps://doi.org/10.1088/0256-307x/30/5/058502openalex-snapshot
InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric
inferred← citeshttps://doi.org/10.1088/0256-307x/32/11/118501openalex-snapshot
High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition
inferred← citeshttps://doi.org/10.1088/0268-1242/27/12/122001openalex-snapshot
Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel
inferred← citeshttps://doi.org/10.1088/0268-1242/28/5/055008openalex-snapshot
Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors
inferred← citeshttps://doi.org/10.1088/0268-1242/28/7/074006openalex-snapshot
High-performance N-polar GaN enhancement-mode device technology
inferred← citeshttps://doi.org/10.1088/0268-1242/28/7/074007openalex-snapshot
Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors
inferred← citeshttps://doi.org/10.1088/0268-1242/28/7/074009openalex-snapshot
N-polar GaN epitaxy and high electron mobility transistors
inferred← citeshttps://doi.org/10.1088/0268-1242/29/11/115031openalex-snapshot
Large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate
inferred← citeshttps://doi.org/10.1088/0268-1242/29/2/025007openalex-snapshot
Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application
inferred← citeshttps://doi.org/10.1088/0268-1242/29/4/045011openalex-snapshot
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
inferred← citeshttps://doi.org/10.1088/0268-1242/29/7/075002openalex-snapshot
Characterization of GaN-based p-channel device structures at elevated temperatures
inferred← citeshttps://doi.org/10.1088/0268-1242/29/9/095011openalex-snapshot
Analysis of interface trap states in InAlN/AlN/GaN heterostructures
inferred← citeshttps://doi.org/10.1088/0268-1242/29/9/095014openalex-snapshot
Compact modelling of InAlN/GaN HEMT for low noise applications
inferred← citeshttps://doi.org/10.1088/0268-1242/30/10/105034openalex-snapshot
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
inferred← citeshttps://doi.org/10.1088/0268-1242/31/2/025001openalex-snapshot
The modulation of multi-domain and harmonic wave in a GaN planar Gunn diode by recess layer
inferred← citeshttps://doi.org/10.1088/0268-1242/31/6/065002openalex-snapshot
Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors
inferred← citeshttps://doi.org/10.1088/1361-6463/ab5728openalex-snapshot
Effects of N 2 O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
inferred← citeshttps://doi.org/10.1088/1361-6463/ac3457openalex-snapshot
Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy
inferred← citeshttps://doi.org/10.1088/1361-6463/acd19dopenalex-snapshot
Selective area doping of GaN toward high-power applications
inferred← citeshttps://doi.org/10.1088/1361-6633/abde93openalex-snapshot
Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics
inferred← citeshttps://doi.org/10.1088/1361-6641/abc7d1openalex-snapshot
Characterization of MOCVD regrown p -GaN and the interface properties for vertical GaN power devices
inferred← citeshttps://doi.org/10.1088/1361-6641/abcbd5openalex-snapshot
Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode
inferred← citeshttps://doi.org/10.1088/1361-6641/ac5676openalex-snapshot
Metal-nitride dual-anode AlGaN/GaN heterostructure Schottky barrier diodes with tunable turn-on voltage and reverse leakage current
inferred← citeshttps://doi.org/10.1088/1361-6641/ad8eedopenalex-snapshot
A computational approach to optimize the linearity in dual-gate InAlGaN/AlN/GaN HEMTs
inferred← citeshttps://doi.org/10.1088/1361-6641/ad96dcopenalex-snapshot
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric
inferred← citeshttps://doi.org/10.1088/1361-6641/ae23f3openalex-snapshot
36.4 THz · V f T × BV figure-of-merit GaN HEMT with source field plate and SiN x passivation
inferred← citeshttps://doi.org/10.1088/1674-1056/23/12/128102openalex-snapshot
L g = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n + -GaN layer by MOCVD
inferred← citeshttps://doi.org/10.1088/1674-1056/24/3/037304openalex-snapshot
Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
inferred← citeshttps://doi.org/10.1088/1674-1056/25/2/027303openalex-snapshot
Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
inferred← citeshttps://doi.org/10.1088/1674-1056/26/10/107301openalex-snapshot
Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier
inferred← citeshttps://doi.org/10.1088/1674-1056/ab7746openalex-snapshot
In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT*
inferred← citeshttps://doi.org/10.1088/1674-1056/ab821eopenalex-snapshot
High performance InAlN/GaN high electron mobility transistors for low voltage applications*
inferred← citeshttps://doi.org/10.1088/1674-1056/ac2b1fopenalex-snapshot
Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications
inferred← citeshttps://doi.org/10.1088/1674-4926/34/4/044006openalex-snapshot
An extrinsicfmax> 100 GHz InAlN/GaN HEMT with AlGaN back barrier
inferred← citeshttps://doi.org/10.1088/1674-4926/37/2/024007openalex-snapshot
70-nm-gated InAlN/GaN HEMTs grown on SiC substrate withfT/fmax> 160 GHz
inferred← citeshttps://doi.org/10.1088/1674-4926/38/8/084001openalex-snapshot
30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications
inferred← citeshttps://doi.org/10.1088/1742-6596/1400/7/077009openalex-snapshot
Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
inferred← citeshttps://doi.org/10.1088/2515-7639/ad218bopenalex-snapshot
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
inferred← citeshttps://doi.org/10.1088/2631-8695/abd3e6openalex-snapshot
An improved parasitic resistance extraction strategy alongside the effect of C ds at low gate bias voltages for AlGaN/GaN HEMTs
inferred← citeshttps://doi.org/10.1093/jmicro/dfv236openalex-snapshot
B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy
inferred← citeshttps://doi.org/10.1103/physrevb.90.115208openalex-snapshot
Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN
inferred← citeshttps://doi.org/10.1109/asdam.2012.6418558openalex-snapshot
Material and device issues of InAlN/GaN heterostructures
inferred← citeshttps://doi.org/10.1109/asicon.2017.8252543openalex-snapshot
Dynamic characteristics and related trapping effects of GaN-based Fin-MISHEMTs
inferred← citeshttps://doi.org/10.1109/bcicts45179.2019.8972773openalex-snapshot
Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power Amplifier with >58.5% PAE
inferred← citeshttps://doi.org/10.1109/csics.2014.6978583openalex-snapshot
Thermal Interface Resistance Measurements for GaN-on-Diamond Composite Substrates
inferred← citeshttps://doi.org/10.1109/csics.2016.7751045openalex-snapshot
High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier
inferred← citeshttps://doi.org/10.1109/drc.2013.6633861openalex-snapshot
N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax
inferred← citeshttps://doi.org/10.1109/drc.2016.7548396openalex-snapshot
First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC
inferred← citeshttps://doi.org/10.1109/edkcon.2018.8770466openalex-snapshot
Dependency of fT and fMAX on Various Device Parameters of AIGaN/GaN HEMT
inferred← citeshttps://doi.org/10.1109/edssc.2019.8753956openalex-snapshot
Thin-Barrier InAlN/GaN MISHEMTs Using LPCVD Si3N4as Gate Dielectric
inferred← citeshttps://doi.org/10.1109/edssc.2019.8754039openalex-snapshot
Monolithically Integrated E/D InAlN/GaN HEMT And Inverters On Sapphire Substrate
inferred← citeshttps://doi.org/10.1109/edtm61175.2025.11041155openalex-snapshot
Improved Ohmic Contact Resistance and DC Performance of InAlN/GaN HEMTs with Si-Incorporated Contact Scheme
inferred← citeshttps://doi.org/10.1109/eumic.2015.7345077openalex-snapshot
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
inferred← citeshttps://doi.org/10.1109/hdis60872.2023.10499489openalex-snapshot
Artificial Neural Network-Based Approach to Modeling Energy Bands of GaN-Based Heterojunction Materials
inferred← citeshttps://doi.org/10.1109/iccci.2015.7218141openalex-snapshot
374GHz cut-off frequency of ultra thin InAlN/AlN/GaN MIS HEMT
inferred← citeshttps://doi.org/10.1109/iccs56273.2022.9988470openalex-snapshot
The Improvement Breakdown Voltage of GaN on Si Pin Diode by Stepped Sidewall Treated with Fluorine Plasma
inferred← citeshttps://doi.org/10.1109/icicdt63592.2024.10717773openalex-snapshot
120 nm GaN HEMTs on a Si Substrate for Mm-Wave Mobile SoC Applications
inferred← citeshttps://doi.org/10.1109/icnf.2013.6578989openalex-snapshot
Noise characteristics of AlInN/GaN HEMTs at microwave frequencies
inferred← citeshttps://doi.org/10.1109/icoei48184.2020.9142891openalex-snapshot
Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications
inferred← citeshttps://doi.org/10.1109/icsict.2012.6467624openalex-snapshot
High-performance AlN/GaN MOSHEMTs with regrown ohmic contacts by MOCVD
inferred← citeshttps://doi.org/10.1109/iedm.2012.6479113openalex-snapshot
Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG
inferred← citeshttps://doi.org/10.1109/iedm.2013.6724712openalex-snapshot
Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation
inferred← citeshttps://doi.org/10.1109/iedm.2015.7409659openalex-snapshot
Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz
inferred← citeshttps://doi.org/10.1109/iedm.2015.7409665openalex-snapshot
GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2
inferred← citeshttps://doi.org/10.1109/ifeec47410.2019.9014673openalex-snapshot
Small Signal Modeling of GaN-on-Si HEMT with Leaky Buffer
inferred← citeshttps://doi.org/10.1109/ifws.2017.8246012openalex-snapshot
Enhancement-mode AlGaN/GaN with plasma oxidation technology
inferred← citeshttps://doi.org/10.1109/imws-amp54652.2022.10107116openalex-snapshot
Gate leakage mechanisms of AlN/GaN High electron mobility transistors
inferred← citeshttps://doi.org/10.1109/inec.2016.7589466openalex-snapshot
Investigation of forward transient characteristics of vertical GaN-on-GaN p-n diodes
inferred← citeshttps://doi.org/10.1109/itherm.2014.6892414openalex-snapshot
Thermal conduction normal to thin silicon nitride films on diamond and GaN
inferred← citeshttps://doi.org/10.1109/jeds.2015.2503701openalex-snapshot
High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
inferred← citeshttps://doi.org/10.1109/jeds.2019.2958915openalex-snapshot
Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs
inferred← citeshttps://doi.org/10.1109/jeds.2020.2963902openalex-snapshot
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
inferred← citeshttps://doi.org/10.1109/jeds.2020.3020893openalex-snapshot
Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN
inferred← citeshttps://doi.org/10.1109/jeds.2022.3169811openalex-snapshot
Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience
inferred← citeshttps://doi.org/10.1109/jeds.2022.3224500openalex-snapshot
Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing
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