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Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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High‐Performance Harsh‐Environment‐Resistant GaO X Solar‐Blind Photodetectors via Defect and Doping Engineering
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Room‐Temperature Fabricated Amorphous Ga 2 O 3 High‐Response‐Speed Solar‐Blind Photodetector on Rigid and Flexible Substrates
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Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
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Fabrication and characteristics of N-doped β-Ga2O3 nanowires
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Characterization of oxygen deficient gallium oxide films grown by PLD
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Reliable determination of chemical state in x-ray photoelectron spectroscopy based on sample-work-function referencing to adventitious carbon: Resolving the myth of apparent constant binding energy of the C 1s peak
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Point defects induced work function modulation of β-Ga2O3
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Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application
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Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films
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Doping induced indirect-to-direct bandgap transition of two-dimensional Ga2O3
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Effect of annealing conditions on the optical properties and surface morphologies of ( 2¯01 )-oriented β-Ga2O3 crystals
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Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD
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Ab initio study of N-doped β-Ga 2 O 3 with intrinsic defects: the structural, electronic and optical properties
inferredcites →https://doi.org/10.1016/j.jallcom.2019.152026openalex-snapshot
The further investigation of N-doped β-Ga2O3 thin films with native defects for Schottky-barrier diode
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Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application
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Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates
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Structural and optical properties of N-doped β-Ga2O3 films deposited by RF magnetron sputtering
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A comparison of electronic structure and optical properties between N-doped β-Ga2O3 and N–Zn co-doped β-Ga2O3
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Fabrication and photoluminescence of -Ga2O3 nanorods
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Target power influence on optical and electrical properties of amorphous titanium oxide deposited by reactive grid-assisted magnetron sputtering
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Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering
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Ultrasensitive Flexible Solar-Blind Photodetectors Based on Graphene/Amorphous Ga2O3 van der Waals Heterojunctions
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Fabrication of a Nb-Doped β-Ga2O3 Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior
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Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga 2 O 3 pn Junction
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Sn-Induced Phase Stabilization and Enhanced Thermal Stability of κ-Ga 2 O 3 Grown by Mist Chemical Vapor Deposition
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Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide
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Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescence
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Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
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Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3
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γ - Ga 2 O 3 quantum dots with visible blue-green light emission property
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X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films
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Controlling n-type conductivity of β-Ga2O3 by Nb doping
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Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
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Acceptor doping of β-Ga2O3 by Mg and N ion implantations
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Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
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Recent progress in Ga 2 O 3 power devices
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Electronic structures and optical properties of Si- and Sn-doped β -Ga 2 O 3 : A GGA+ U study
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Band alignment of p-type oxide/ε-Ga2O3 heterojunctions investigated by x-ray photoelectron spectroscopy*
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High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film*
inferredcites →https://doi.org/10.1109/led.2017.2697359openalex-snapshot
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
inferredcites →https://doi.org/10.1109/led.2018.2859049openalex-snapshot
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs
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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
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Development of solar-blind photodetectors based on Si-implanted β-Ga_2O_3
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Study on the preparation and properties of (BixGa1-x)2O3 alloy semiconductor film deposited by radio frequency co-sputtering
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Effective P-type N-doped α-Ga2O3 from First-Principles Calculations
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