On the public citation graph
Defect-State and Electronic-Structure Engineering of β-Ga2O3 Thin Films via Zn/N Co-Doping for Deep-Ultraviolet Optoelectronic Materials
0 signed · 17 inferred · view as graph
Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.
Is this your work? Sign in with ORCID and put your name on the
claims that are yours.
Reference health. See whether every reference in this work resolves to a
known work and none has been retracted — and get a dated CiteStamped
badge you can embed.
What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/j.apsadv.2023.100384openalex-snapshot
Ultraviolet photoelectron spectroscopy: Practical aspects and best practices
inferredcites →https://doi.org/10.1016/j.apsusc.2022.154666openalex-snapshot
Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering
inferredcites →https://doi.org/10.1016/j.commatsci.2025.113849openalex-snapshot
First-principles study of Mg-Ge co-doping to realize p-type β-Ga2O3 containing divacancy-interstitial complex defects
inferredcites →https://doi.org/10.1016/j.jlumin.2023.119836openalex-snapshot
Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped β-Ga2O3 thin films on sapphire substrates
inferredcites →https://doi.org/10.1016/j.matlet.2022.133251openalex-snapshot
P-type β-Ga2O3 films were prepared by Zn-doping using RF magnetron sputtering
inferredcites →https://doi.org/10.1016/j.mssp.2020.105572openalex-snapshot
Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates
inferredcites →https://doi.org/10.1016/j.mtadv.2023.100436openalex-snapshot
P-type conductive Ga2O3 epilayers grown on sapphire substrate by phosphorus-ion implantation technology
inferredcites →https://doi.org/10.1016/j.vacuum.2022.111019openalex-snapshot
Quasi-vertical ε-Ga2O3 solar-blind photodetectors grown on p-Si substrates with Al2O3 buffer layer by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1021/acsanm.2c00599openalex-snapshot
Defect Compensation in Nitrogen-Doped β-Ga2O3 Nanowires: Implications for Bipolar Nanoscale Devices
inferredcites →https://doi.org/10.1038/s41598-020-78326-xopenalex-snapshot
Gallium oxide nanowires for UV detection with enhanced growth and material properties
inferredcites →https://doi.org/10.1039/d3nr00149kopenalex-snapshot
Theoretical screening of single atom doping on β-Ga 2 O 3 (100) for photoelectrochemical water splitting with high activity and low limiting potential
inferredcites →https://doi.org/10.1039/d3tc00345kopenalex-snapshot
Regulation of oxygen vacancies in nitrogen-doped Ga 2 O 3 films for high-performance MSM solar-blind UV photodetectors
inferredcites →https://doi.org/10.1039/d4ce00296bopenalex-snapshot
Self-trapped holes, oxygen vacancies and electrocatalytic performance of Zn-doped β-Ga 2 O 3 microspindles
inferredcites →https://doi.org/10.1063/5.0006224openalex-snapshot
Prospects for n-type doping of (AlxGa1−x)2O3 alloys
inferredcites →https://doi.org/10.1063/5.0158279openalex-snapshot
Elucidating the role of oxygen vacancies on the electrical conductivity of β-Ga2O3 single-crystals
inferredcites →https://doi.org/10.1364/ome.8.002941openalex-snapshot
Solar blind deep ultraviolet β-Ga 2 O 3 photodetectors grown on sapphire by the Mist-CVD method
inferredcites →https://doi.org/10.1364/prj.7.000381openalex-snapshot
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Editorial review for independent work. ICSAC — the Institute for Complexity
Science and Advanced Computing — runs a structured editorial panel for researchers
publishing outside journals, and publishes on CiteStamp rails. Submission is free
and goes through ORCID: icsacinstitute.org/submit.