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Diamond bipolar junction transistor device with phosphorus-doped diamond base layer

https://doi.org/10.1016/j.diamond.2012.05.004

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.201100140openalex-snapshot

Electron emission from diamond p–i–n junction diode with heavily P‐doped n+ top layer

inferredcites →https://doi.org/10.1016/j.diamond.2006.12.046openalex-snapshot

Diamond-based RF power transistors: Fundamentals and applications

inferredcites →https://doi.org/10.1016/j.diamond.2009.01.016openalex-snapshot

Electrical and light-emitting properties from (111)-oriented homoepitaxial diamond p–i–n junctions

inferredcites →https://doi.org/10.1063/1.119729openalex-snapshot

Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

inferredcites →https://doi.org/10.1063/1.1944228openalex-snapshot

n -type doping of (001)-oriented single-crystalline diamond by phosphorus

inferredcites →https://doi.org/10.1063/1.2889947openalex-snapshot

Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

inferredcites →https://doi.org/10.1063/1.3005639openalex-snapshot

Low specific contact resistance of heavily phosphorus-doped diamond film

inferredcites →https://doi.org/10.1063/1.3120560openalex-snapshot

High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers

inferredcites →https://doi.org/10.1063/1.3153986openalex-snapshot

Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment

inferredcites →https://doi.org/10.1063/1.3159837openalex-snapshot

Diamond Schottky-pn diode with high forward current density and fast switching operation

inferredcites →https://doi.org/10.1063/1.93346openalex-snapshot

Bipolar transistor action in ion implanted diamond

inferredcites →https://doi.org/10.1088/0022-3727/34/16/201openalex-snapshot

Prospects of diamond devices

inferredcites →https://doi.org/10.1109/16.960379openalex-snapshot

The future of bipolar power transistors

inferredcites →https://doi.org/10.1109/led.2009.2026439openalex-snapshot

Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode

inferredcites →https://doi.org/10.1143/apex.2.055502openalex-snapshot

Selective Growth of Buried n+Diamond on (001) Phosphorus-Doped n-Type Diamond Film

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Determination of Thermal Properties of Diamond Using Cellular Monte Device Simulation

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

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Recent progress on heteroepitaxial growth of single crystal diamond films

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Electrical properties of lateral p–n junction diodes fabricated by selective growth of n + diamond

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Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

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Determination of Current Leakage Sites in Diamond p–n Junction

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Residual Gas Analysis for Controlling the Phosphorus Incorporation in Diamond

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Experimental Insights into Impurity Incorporation in Chemical Vapor Deposition Doped Diamond

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Reduction of n‐type diamond contact resistance by graphite electrode

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Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

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n-type B-N Co-doping and N Doping in Diamond from First Principles

inferred← citeshttps://doi.org/10.1007/978-3-031-35995-8_20openalex-snapshot

First-Principles Calculation to N-type Beryllium Related Co-doping and Beryllium Doping in Diamond

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Adsorption and Thermal Stability of Hydrogen Terminationṇ on Diamond Surface: A First-Principles Study

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Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

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n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation

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Phosphorus-doped n-type diamond with high ionization efficiency through high-pressure thermal diffusion

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Conductivity and Impurity Doping on Single Crystal Diamond

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Fundamental material’s nature of diamond

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Key technologies for device fabrications and materials characterizations

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Device formation and the characterizations

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Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth

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Fabrication of inversion channel diamond MOSFET with atomically step-free Al2O3/diamond interface

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Wide bandgap semiconductor-based integrated circuits

inferred← citeshttps://doi.org/10.1016/j.diamond.2013.02.004openalex-snapshot

Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base

inferred← citeshttps://doi.org/10.1016/j.diamond.2014.01.009openalex-snapshot

Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations

inferred← citeshttps://doi.org/10.1016/j.diamond.2018.03.030openalex-snapshot

Temperature dependence of electrical characteristics for diamond Schottky-pn diode in forward bias

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Enhanced nucleation and large-scale growth of CVD diamond via surface-modification of silicon-incorporated diamond-like carbon thin films

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High-rate growth of single crystal diamond in AC glow discharge plasma

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Correlated Kelvin-probe force microscopy, micro-FTIR and micro-Raman analysis of doping anisotropy in multisectorial boron-doped HPHT diamonds

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Heavy phosphorus doping of diamond by hot-filament chemical vapor deposition

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Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

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Diamond Schottky p-i-n diodes for high power RF receiver protectors

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Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration

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Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

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Low Temperature Diamond Growth

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Zr/oxidized diamond interface for high power Schottky diodes

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Temperature dependent simulation of diamond depleted Schottky PIN diodes

inferred← citeshttps://doi.org/10.1063/1.5100328openalex-snapshot

Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

inferred← citeshttps://doi.org/10.1063/5.0031478openalex-snapshot

Selectively boron doped homoepitaxial diamond growth for power device applications

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Digital micro-photogrammetry in analysis and modeling habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds

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Picosecond dynamics of free and bound excitons in doped diamond

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Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method

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Diamond bipolar device simulation

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Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers

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Growth-sector dependence of morphological, structural and optical features in boron-doped HPHT diamond crystals

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Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors

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Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

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Improved drain current of diamond metal–semiconductor field-effect transistor by selectively grown p + contact layer

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Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition

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Carrier transport in homoepitaxial diamond films with heavy phosphorus doping

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