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Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.201300051openalex-snapshot

Electrical characterization of diamond Pi N diodes for high voltage applications

inferredcites →https://doi.org/10.1016/j.apsusc.2017.06.005openalex-snapshot

Mechanism of anisotropic etching on diamond (111) surfaces by a hydrogen plasma treatment

inferredcites →https://doi.org/10.1016/j.apsusc.2018.07.094openalex-snapshot

Formation of atomically flat hydroxyl-terminated diamond (1 1 1) surfaces via water vapor annealing

inferredcites →https://doi.org/10.1016/j.diamond.2012.01.011openalex-snapshot

High temperature application of diamond power device

inferredcites →https://doi.org/10.1016/j.diamond.2012.05.004openalex-snapshot

Diamond bipolar junction transistor device with phosphorus-doped diamond base layer

inferredcites →https://doi.org/10.1016/j.diamond.2013.02.004openalex-snapshot

Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base

inferredcites →https://doi.org/10.1016/j.diamond.2015.08.013openalex-snapshot

Time-resolved cyclotron resonance on dislocation-free HPHT diamond

inferredcites →https://doi.org/10.1016/j.diamond.2017.03.018openalex-snapshot

Diamond Schottky-pn diode using lightly nitrogen-doped layer

inferredcites →https://doi.org/10.1016/j.mssp.2018.02.012openalex-snapshot

Improved device characteristics obtained in 4H-SiC MOSFET using high-k dielectric stack with ultrathin SiO2-AlN as interfacial layers

inferredcites →https://doi.org/10.1038/s41598-018-25193-2openalex-snapshot

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour

inferredcites →https://doi.org/10.1038/srep31585openalex-snapshot

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

inferredcites →https://doi.org/10.1063/1.1798399openalex-snapshot

Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

inferredcites →https://doi.org/10.1063/1.1819976openalex-snapshot

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

inferredcites →https://doi.org/10.1063/1.4891039openalex-snapshot

High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance

inferredcites →https://doi.org/10.1063/1.4901259openalex-snapshot

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

inferredcites →https://doi.org/10.1063/1.4906095openalex-snapshot

Erratum: “Effects of interface state density on 4H-SiC n-channel field-effect mobility” [Appl. Phys. Lett. 104 , 083516 (2014)]

inferredcites →https://doi.org/10.1063/1.4914385openalex-snapshot

Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

inferredcites →https://doi.org/10.1063/1.4964382openalex-snapshot

N-type control of single-crystal diamond films by ultra-lightly phosphorus doping

inferredcites →https://doi.org/10.1063/1.5042038openalex-snapshot

Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and suppression of Vfb instability on 4H-SiC (0001) Si-face

inferredcites →https://doi.org/10.1109/16.337449openalex-snapshot

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

inferredcites →https://doi.org/10.1109/16.337450openalex-snapshot

On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

inferredcites →https://doi.org/10.1109/led.2010.2047239openalex-snapshot

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

inferredcites →https://doi.org/10.1109/led.2014.2356191openalex-snapshot

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

inferredcites →https://doi.org/10.1109/led.2014.2362768openalex-snapshot

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

inferredcites →https://doi.org/10.1143/apex.5.091301openalex-snapshot

Diamond Junction Field-Effect Transistors with Selectively Grown n$^{+}$-Side Gates

inferredcites →https://doi.org/10.1143/jjap.28.l2291openalex-snapshot

Effects of Trap State on Field-Effect Mobility of MOSFET's Formed on Large-Grain Polysilicon Films

inferredcites →https://doi.org/10.1143/jjap.47.7784openalex-snapshot

Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing

inferredcites →https://doi.org/10.1143/jjap.51.02bf05openalex-snapshot

Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

inferredcites →https://doi.org/10.1143/jjap.51.090107openalex-snapshot

Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth

inferredcites →https://doi.org/10.4028/www.scientific.net/msf.527-529.961openalex-snapshot

High Channel Mobility 4H-SiC MOSFETs

inferredcites →https://doi.org/10.7567/1347-4065/aafd95openalex-snapshot

Hall effect mobility in inversion layer of 4H-SiC MOSFETs with a thermally grown gate oxide

inferredcites →https://doi.org/10.7567/apex.10.121004openalex-snapshot

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

inferredcites →https://doi.org/10.7567/apex.8.104103openalex-snapshot

Electronic properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates

inferredcites →https://doi.org/10.7567/jjap.53.04eh04openalex-snapshot

Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition

inferredcites →https://doi.org/10.7567/jjap.56.10pf06openalex-snapshot

B-doped diamond field-effect transistor with ferroelectric vinylidene fluoride–trifluoroethylene gate insulator

inferredcites →https://doi.org/10.7567/jjap.57.04fr01openalex-snapshot

Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

inferredcites →https://doi.org/10.7567/jjap.57.120304openalex-snapshot

Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4659422openalex-extracted

inferred← citeshttps://doi.org/10.1002/pssa.201900462openalex-snapshot

Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors

inferred← citeshttps://doi.org/10.1007/s11664-022-09753-xopenalex-snapshot

Simulation Analysis of High Field-Effect Mobility in p-Channel-Based Cylindrical Thin-Film Transistors

inferred← citeshttps://doi.org/10.1007/s42496-026-00310-xopenalex-snapshot

Lab-Grown Synthetic Diamonds for High Performing Electronic Components in the Aerospace Sector

inferred← citeshttps://doi.org/10.1016/j.apsadv.2025.100898openalex-snapshot

Formation of diamond trenches with flat {111} sidewalls via thermochemical etching by Ni films in water vapor

inferred← citeshttps://doi.org/10.1016/j.carbon.2020.07.019openalex-snapshot

Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method

inferred← citeshttps://doi.org/10.1016/j.carbon.2020.11.072openalex-snapshot

Inversion channel MOSFET on heteroepitaxially grown free-standing diamond

inferred← citeshttps://doi.org/10.1016/j.carbon.2025.120024openalex-snapshot

Fabrication of inversion channel diamond MOSFET with atomically step-free Al2O3/diamond interface

inferred← citeshttps://doi.org/10.1016/j.diamond.2024.111181openalex-snapshot

Nitrogen adsorption induced surface kinetics changes of diamond growth by microwave plasma CVD

inferred← citeshttps://doi.org/10.1016/j.diamond.2024.111236openalex-snapshot

Fabrication of lateral diamond MOSFET with buried pn-junctions by diamond surface planarization based on carbon solid solution into nickel

inferred← citeshttps://doi.org/10.1016/j.diamond.2024.111887openalex-snapshot

700 V breakdown vertical diamond Schottky rectifier with power figure of merit 30.5 MW·cm−2

inferred← citeshttps://doi.org/10.1016/j.diamond.2025.113205openalex-snapshot

Suppression of on-resistance variability by buried source/drain structures in inversion type diamond MOSFETs

inferred← citeshttps://doi.org/10.1016/j.diamond.2026.114141openalex-snapshot

Trench-type inversion-channel diamond MOSFET enabled by thermochemical etching based on C solid solution into Ni

inferred← citeshttps://doi.org/10.1016/j.surfin.2025.107147openalex-snapshot

First-principles study of interface states in diamond(111)/Al 2 O 3 with different terminations

inferred← citeshttps://doi.org/10.1038/s41928-021-00689-4openalex-snapshot

High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

inferred← citeshttps://doi.org/10.1063/5.0021785openalex-snapshot

Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method

inferred← citeshttps://doi.org/10.1063/5.0023086openalex-snapshot

Fixed charges investigation in Al2O3/hydrogenated-diamond metal-oxide-semiconductor capacitors

inferred← citeshttps://doi.org/10.1063/5.0075964openalex-snapshot

Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body

inferred← citeshttps://doi.org/10.1063/5.0188372openalex-snapshot

Impact of water vapor annealing treatments on Al2O3/diamond interface

inferred← citeshttps://doi.org/10.1063/5.0245530openalex-snapshot

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

inferred← citeshttps://doi.org/10.1063/5.0267276openalex-snapshot

Band alignment of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) on non-hydrogenated and H-terminated (100) diamond

inferred← citeshttps://doi.org/10.1063/5.0326366openalex-snapshot

Conductivity conversion of N-doped diamond by additional B ion implantation

inferred← citeshttps://doi.org/10.1063/5.0333202openalex-snapshot

Interface charge inhomogeneity at Al2O3/OH-diamond (111) characterized by time-resolved scanning nonlinear dielectric microscopy

inferred← citeshttps://doi.org/10.1063/5.0345345openalex-snapshot

Radiation effects of heavy ions in hydrogen-terminated diamond field-effect transistors

inferred← citeshttps://doi.org/10.1088/2515-7639/ad218bopenalex-snapshot

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

inferred← citeshttps://doi.org/10.1109/iedm13553.2020.9371947openalex-snapshot

Diamond Semiconductor Devices, state-of-the-art of material growth and device processing

inferred← citeshttps://doi.org/10.1109/ted.2020.2972979openalex-snapshot

Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors

inferred← citeshttps://doi.org/10.1109/ted.2022.3147738openalex-snapshot

High Mobility Normally-OFF Hydrogenated Diamond Field Effect Transistors With BaF₂ Gate Insulator Formed by Electron Beam Evaporator

inferred← citeshttps://doi.org/10.1116/6.0004590openalex-snapshot

Ultrasmooth single-crystal diamond surfaces by extended ozone exposure

inferred← citeshttps://doi.org/10.1149/2162-8777/ae3345openalex-snapshot

Effect of Schottky Metal Contacts on Barrier Heights of Vertical p-type Diamond Rectifiers, with an ITO/Diamond Heterojunction Benchmark

inferred← citeshttps://doi.org/10.1380/vss.64.80openalex-snapshot

Recent Progress and Issues of Diamond Metal-oxide-semiconductor (MOS) Interface for High-Frequency and Power Device Application

inferred← citeshttps://doi.org/10.1557/s43578-021-00317-zopenalex-snapshot

Inversion-type p-channel diamond MOSFET issues

inferred← citeshttps://doi.org/10.1557/s43578-021-00458-1openalex-snapshot

Ultrawide-bandgap semiconductors: An overview

inferred← citeshttps://doi.org/10.2139/ssrn.6958833openalex-snapshot

Formation mechanism and passivation modulation of interfacial defect states in Al2O3/CNT heterojunctions for CNTFETs

inferred← citeshttps://doi.org/10.3390/ma14227081openalex-snapshot

Diamond for Electronics: Materials, Processing and Devices

inferred← citeshttps://doi.org/10.3390/nano14050460openalex-snapshot

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

inferred← citeshttps://doi.org/10.4028/p-n0z51topenalex-snapshot

Microscopic Evaluation of Al2O3/p-Type Diamond (111) Interfaces Using Scanning Nonlinear Dielectric Microscopy

inferred← citeshttps://doi.org/10.48550/arxiv.2102.05982openalex-snapshot

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures

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