On the public citation graph
Transparent ring oscillator based on indium gallium oxide thin-film transistors
0 signed · 154 inferred · view as graph
Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.
Is this your work? Sign in with ORCID and put your name on the
claims that are yours.
Reference health. See whether every reference in this work resolves to a
known work and none has been retracted — and get a dated CiteStamped
badge you can embed.
What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1063/1.111686openalex-snapshot
GaInO3: A new transparent conducting oxide
inferredcites →https://doi.org/10.1063/1.123946openalex-snapshot
Organic complementary ring oscillators
inferredcites →https://doi.org/10.1063/1.1290728openalex-snapshot
High-performance all-polymer integrated circuits
inferredcites →https://doi.org/10.1063/1.1534627openalex-snapshot
Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
inferredcites →https://doi.org/10.1063/1.1542677openalex-snapshot
ZnO-based transparent thin-film transistors
inferredcites →https://doi.org/10.1063/1.1553997openalex-snapshot
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
inferredcites →https://doi.org/10.1063/1.1712015openalex-snapshot
ZnO-channel thin-film transistors: Channel mobility
inferredcites →https://doi.org/10.1063/1.1767291openalex-snapshot
Fully printed integrated circuits from solution processable polymers
inferredcites →https://doi.org/10.1063/1.1843286openalex-snapshot
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
inferredcites →https://doi.org/10.1063/1.1862767openalex-snapshot
Transparent thin-film transistors with zinc indium oxide channel layer
inferredcites →https://doi.org/10.1088/0022-3727/36/20/l02openalex-snapshot
Spin-coated zinc oxide transparent transistors
inferredcites →https://doi.org/10.1088/0022-3727/37/20/006openalex-snapshot
Tin oxide transparent thin-film transistors
inferredcites →https://doi.org/10.1126/science.1083212openalex-snapshot
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
inferredcites →https://doi.org/10.1143/jjap.42.l347openalex-snapshot
High Mobility Thin Film Transistors with Transparent ZnO Channels
inferredcites →https://doi.org/10.1557/jmr.2004.0263openalex-snapshot
From polymer transistors toward printed electronics
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4657934openalex-extracted
Improvement of Electrical and Wet-Etching Characteristics for Ingatio Electrodes in Organic Light-Emitting Diodes Through Hydrogen Doping
inferred← citeshttps://doi.org/10.1002/9780470710609.ch3openalex-snapshot
p ‐Type Wide‐Band‐Gap Semiconductors for Transparent Electronics
inferred← citeshttps://doi.org/10.1002/9780470710609.ch6openalex-snapshot
Oxide Semiconductors: From Materials to Devices
inferred← citeshttps://doi.org/10.1002/9780470710609.ch8openalex-snapshot
Application of Transparent Amorphous Oxide Thin Film Transistors to Electronic Paper
inferred← citeshttps://doi.org/10.1002/9781119966999.ch7openalex-snapshot
A Glance at Current and Upcoming Applications
inferred← citeshttps://doi.org/10.1002/9781394200269.ch5openalex-snapshot
Applications of Oxide Thin Film Transistors
inferred← citeshttps://doi.org/10.1002/9783527842551.ch4openalex-snapshot
Metal Oxide Semiconductors for Transistors
inferred← citeshttps://doi.org/10.1002/adfm.200801155openalex-snapshot
Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer
inferred← citeshttps://doi.org/10.1002/adma.200602223openalex-snapshot
Inorganic Semiconductors for Flexible Electronics
inferred← citeshttps://doi.org/10.1002/adma.201103228openalex-snapshot
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
inferred← citeshttps://doi.org/10.1002/advs.202207174openalex-snapshot
MXene Contact Engineering for Printed Electronics
inferred← citeshttps://doi.org/10.1002/advs.202505133openalex-snapshot
Transparent and Transient Flexible Electronics
inferred← citeshttps://doi.org/10.1002/aelm.201500431openalex-snapshot
Ring Oscillators Based on ZnO Channel JFETs and MESFETs
inferred← citeshttps://doi.org/10.1002/aelm.201900548openalex-snapshot
Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs
inferred← citeshttps://doi.org/10.1002/ange.200803514openalex-snapshot
Synthesis of Heterometallic Group 13 Nanoclusters and Inks for Oxide Thin‐Film Transistors
inferred← citeshttps://doi.org/10.1002/anie.200803514openalex-snapshot
Synthesis of Heterometallic Group 13 Nanoclusters and Inks for Oxide Thin‐Film Transistors
inferred← citeshttps://doi.org/10.1002/cphc.202000005openalex-snapshot
Yttrium Doped Copper (II) Oxide Hole Transport Material as Efficient Thin Film Transistor
inferred← citeshttps://doi.org/10.1002/jsid.114openalex-snapshot
Solution‐processed and low‐temperature metal oxide n‐channel thin‐film transistors and low‐voltage complementary circuitry on large‐area flexible polyimide foil
inferred← citeshttps://doi.org/10.1002/jsid.155openalex-snapshot
Single‐source dual‐layer amorphous IGZO thin‐film transistors for display and circuit applications
inferred← citeshttps://doi.org/10.1002/jsid.189openalex-snapshot
Novel back‐channel‐etch process flow based a‐IGZO TFTs for circuit and display applications on PEN foil
inferred← citeshttps://doi.org/10.1002/jsid.281openalex-snapshot
Circuits and AMOLED display with self‐aligned a‐IGZO TFTs on polyimide foil
inferred← citeshttps://doi.org/10.1002/jsid.558openalex-snapshot
Characteristics improvement of top‐gate self‐aligned amorphous indium gallium zinc oxide thin‐film transistors using a dual‐gate control
inferred← citeshttps://doi.org/10.1002/pssa.200778910openalex-snapshot
Amorphous oxide TFT and their applications in electrophoretic displays
inferred← citeshttps://doi.org/10.1002/pssa.200983771openalex-snapshot
Transparent semiconducting oxides: materials and devices
inferred← citeshttps://doi.org/10.1002/pssr.200701129openalex-snapshot
Ultra‐high long‐term stability of oxide‐TTFTs under current stress
inferred← citeshttps://doi.org/10.1002/pssr.201307259openalex-snapshot
One decade of fully transparent oxide thin‐film transistors: fabrication, performance and stability
inferred← citeshttps://doi.org/10.1002/sdtp.12779openalex-snapshot
P‐1.11: A Compact Model of Current and Capacitance for Amorphous Indium Gallium Zinc Oxide Thin‐Film Transistors
inferred← citeshttps://doi.org/10.1002/smll.202403801openalex-snapshot
Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors
inferred← citeshttps://doi.org/10.1007/978-3-030-79804-8_4openalex-snapshot
Semiconducting Materials for Printed Flexible Electronics
inferred← citeshttps://doi.org/10.1007/978-3-319-27192-7_4openalex-snapshot
Analog-to-Digital Converters
inferred← citeshttps://doi.org/10.1007/978-3-319-31165-4_50openalex-snapshot
Oxide TFTs on Flexible Substrates for Designing and Fabricating Analog-to-Digital Converters
inferred← citeshttps://doi.org/10.1007/978-3-319-50824-5_3openalex-snapshot
Metal Oxide Semiconductor Thin-Film Transistors: Device Physics and Compact Modeling
inferred← citeshttps://doi.org/10.1007/978-3-642-23521-4_15openalex-snapshot
N-Type Oxide Semiconductor Thin-Film Transistors
inferred← citeshttps://doi.org/10.1007/s10832-010-9622-7openalex-snapshot
Effect of preheating process on crystallization and optical properties of sol-gel derived ZnO semiconductor thin films
inferred← citeshttps://doi.org/10.1007/s10832-011-9680-5openalex-snapshot
Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter
inferred← citeshttps://doi.org/10.1016/j.ijleo.2024.172094openalex-snapshot
Synthesis and characterization of InGaZnO nanocomposites: An insight of optical, dielectric, and magnetic properties
inferred← citeshttps://doi.org/10.1016/j.jallcom.2010.01.100openalex-snapshot
Preparation and characterization of ZnO transparent semiconductor thin films by sol–gel method
inferred← citeshttps://doi.org/10.1016/j.jallcom.2010.02.092openalex-snapshot
Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (100) substrates by MOCVD
inferred← citeshttps://doi.org/10.1016/j.jallcom.2024.174106openalex-snapshot
Improvement of electrical characteristics and wet etching procedures for InGaTiO electrodes in organic light-emitting diodes through hydrogen doping
inferred← citeshttps://doi.org/10.1016/j.jnoncrysol.2007.10.071openalex-snapshot
Factors controlling electron transport properties in transparent amorphous oxide semiconductors
inferred← citeshttps://doi.org/10.1016/j.jnoncrysol.2007.10.083openalex-snapshot
Application of amorphous oxide TFT to electrophoretic display
inferred← citeshttps://doi.org/10.1016/j.jssc.2011.05.048openalex-snapshot
Structural and optical properties of Ga2O3:In films deposited on MgO (100) substrates by MOCVD
inferred← citeshttps://doi.org/10.1016/j.matchemphys.2013.03.051openalex-snapshot
Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films
inferred← citeshttps://doi.org/10.1016/j.materresbull.2012.04.120openalex-snapshot
Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition
inferred← citeshttps://doi.org/10.1016/j.mee.2009.12.081openalex-snapshot
Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor
inferred← citeshttps://doi.org/10.1016/j.mseb.2013.12.003openalex-snapshot
Preparation of amorphous Ga–Sn–Zn–O semiconductor thin films by RF-sputtering method
inferred← citeshttps://doi.org/10.1016/j.progsolidstchem.2007.02.002openalex-snapshot
Report from the third workshop on future directions of solid-state chemistry: The status of solid-state chemistry and its impact in the physical sciences
inferred← citeshttps://doi.org/10.1016/j.sna.2013.01.002openalex-snapshot
Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors
inferred← citeshttps://doi.org/10.1016/j.solidstatesciences.2007.10.005openalex-snapshot
Electrical and optical properties of epitaxial transparent conductive BaCuTeF thin films deposited by pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.solmat.2013.02.006openalex-snapshot
Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films
inferred← citeshttps://doi.org/10.1016/j.spmi.2017.08.027openalex-snapshot
IGZO TFT-based circuit with tunable threshold voltage by laser annealing
inferred← citeshttps://doi.org/10.1016/j.sse.2011.01.046openalex-snapshot
Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric
inferred← citeshttps://doi.org/10.1016/j.sse.2011.07.012openalex-snapshot
Inverter circuits on glass substrates based on ZnO-nanoparticle thin-film transistors
inferred← citeshttps://doi.org/10.1016/j.sse.2024.108976openalex-snapshot
A unified explicit charge-based capacitance model for metal oxide thin-film transistors
inferred← citeshttps://doi.org/10.1016/j.tsf.2006.12.125openalex-snapshot
Recent progress in transparent oxide semiconductors: Materials and device application
inferred← citeshttps://doi.org/10.1016/j.tsf.2007.03.161openalex-snapshot
Amorphous oxide channel TFTs
inferred← citeshttps://doi.org/10.1016/j.tsf.2007.06.164openalex-snapshot
Transparent electronics: Schottky barrier and heterojunction considerations
inferred← citeshttps://doi.org/10.1016/j.tsf.2007.10.073openalex-snapshot
Chalcogen-based transparent conductors
inferred← citeshttps://doi.org/10.1016/j.tsf.2007.10.081openalex-snapshot
Amorphous IZO-based transparent thin film transistors
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.01.181openalex-snapshot
Process development of ITO source/drain electrode for the top-gate indium–gallium–zinc oxide transparent thin-film transistor
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.02.071openalex-snapshot
The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source–drain structure
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.12.010openalex-snapshot
Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates
inferred← citeshttps://doi.org/10.1016/j.tsf.2011.06.082openalex-snapshot
Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors
inferred← citeshttps://doi.org/10.1016/j.tsf.2011.11.067openalex-snapshot
The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors
inferred← citeshttps://doi.org/10.1021/acsami.5c09392openalex-snapshot
Material-Specific Diffusion Barrier Performance of Al2O3 for p-Type and n-Type Oxide Semiconductors in Oxide-Based CMOS Applications
inferred← citeshttps://doi.org/10.1021/am302251sopenalex-snapshot
p-Channel Oxide Thin Film Transistors Using Solution-Processed Copper Oxide
inferred← citeshttps://doi.org/10.1021/am402065kopenalex-snapshot
Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture
inferred← citeshttps://doi.org/10.1021/am403585nopenalex-snapshot
Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility
inferred← citeshttps://doi.org/10.1021/ic403121ropenalex-snapshot
Transmetalation of Aqueous Inorganic Clusters: A Useful Route to the Synthesis of Heterometallic Aluminum and Indium Hydroxo—Aquo Clusters
inferred← citeshttps://doi.org/10.1021/nn800434dopenalex-snapshot
Transparent Electronics Based on Transfer Printed Aligned Carbon Nanotubes on Rigid and Flexible Substrates
inferred← citeshttps://doi.org/10.1038/asiamat.2010.5openalex-snapshot
Material characteristics and applications of transparent amorphous oxide semiconductors
inferred← citeshttps://doi.org/10.1039/c1jm15211dopenalex-snapshot
Towards transparent electronics: fabrication of an organic transistor with a wide bandgap polymer
inferred← citeshttps://doi.org/10.1039/c9tc03933copenalex-snapshot
Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status
inferred← citeshttps://doi.org/10.1063/1.2716355openalex-snapshot
Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors
inferred← citeshttps://doi.org/10.1063/1.2723543openalex-snapshot
Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
inferred← citeshttps://doi.org/10.1063/1.2753724openalex-snapshot
Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes
inferred← citeshttps://doi.org/10.1063/1.2825422openalex-snapshot
Stable indium oxide thin-film transistors with fast threshold voltage recovery
inferred← citeshttps://doi.org/10.1063/1.2898217openalex-snapshot
Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits
inferred← citeshttps://doi.org/10.1063/1.2975959openalex-snapshot
High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
inferred← citeshttps://doi.org/10.1063/1.3012386openalex-snapshot
Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
inferred← citeshttps://doi.org/10.1063/1.3028093openalex-snapshot
ZnO-based low voltage inverter with low-k/high-k double polymer dielectric layer
inferred← citeshttps://doi.org/10.1063/1.3430988openalex-snapshot
Ultrathin gate-contacts for metal-semiconductor field-effect transistor devices: An alternative approach in transparent electronics
inferred← citeshttps://doi.org/10.1063/1.3579529openalex-snapshot
Low-voltage gallium–indium–zinc–oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application
inferred← citeshttps://doi.org/10.1063/5.0029185openalex-snapshot
Origin of performance improvement in solution-processed indium–gallium–zinc-oxide thin-film transistors having thin active layer and asymmetric dual gate structure
inferred← citeshttps://doi.org/10.1080/15980316.2021.1977401openalex-snapshot
Recent progress of oxide-TFT-based inverter technology
inferred← citeshttps://doi.org/10.1088/0022-3727/42/21/215301openalex-snapshot
Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications
inferred← citeshttps://doi.org/10.1088/0022-3727/47/8/085103openalex-snapshot
Effect of processing temperature on the structural, electronic and electrical properties of solution-processed amorphous Ge–In–Sn–O thin-film transistors
inferred← citeshttps://doi.org/10.1088/0256-307x/32/4/047302openalex-snapshot
Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors
inferred← citeshttps://doi.org/10.1088/0957-4484/18/19/195204openalex-snapshot
Transparent thin-film transistor with self-assembled nanocrystals
inferred← citeshttps://doi.org/10.1088/1361-6528/ab1860openalex-snapshot
Solution-processed metal-oxide thin-film transistors: a review of recent developments
inferred← citeshttps://doi.org/10.1088/1367-2630/13/8/085012openalex-snapshot
Electronic and optical properties of MgxZn1−xO and CdxZn1−xO fromab initiocalculations
inferred← citeshttps://doi.org/10.1093/ietele/e90-c.11.2105openalex-snapshot
"Front Drive" Display Structure for Color Electronic Paper Using Fully Transparent Amorphous Oxide TFT Array
inferred← citeshttps://doi.org/10.1103/physrevb.90.155206openalex-snapshot
Role of atomic radius and d -states hybridization in the stability of the crystal structure of M2O3 (M=Al , Ga, In) oxides
inferred← citeshttps://doi.org/10.1109/icmt.2011.6002478openalex-snapshot
A flexible and transparent ReRAM with CdO/TiO2/CdO structure on PET substrate
inferred← citeshttps://doi.org/10.1109/jdt.2009.2020611openalex-snapshot
Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/jdt.2009.2024437openalex-snapshot
The Influence of Channel Compositions on the Electrical Properties of Solution-Processed Indium-Zinc Oxide Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/jeds.2018.2837682openalex-snapshot
Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/jproc.2012.2190168openalex-snapshot
Flexible Electronics: The Next Ubiquitous Platform
inferred← citeshttps://doi.org/10.1109/led.2007.893223openalex-snapshot
Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor
inferred← citeshttps://doi.org/10.1109/led.2009.2017496openalex-snapshot
Zinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter
inferred← citeshttps://doi.org/10.1109/led.2009.2021167openalex-snapshot
Radio-Frequency Operation of Transparent Nanowire Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/led.2009.2025672openalex-snapshot
High-Frequency ZnO Thin-Film Transistors on Si Substrates
inferred← citeshttps://doi.org/10.1109/led.2010.2041525openalex-snapshot
Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/led.2010.2042424openalex-snapshot
AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/led.2011.2106193openalex-snapshot
Light and Temperature Stability of Fully Transparent ZnO-Based Inverter Circuits
inferred← citeshttps://doi.org/10.1109/led.2012.2186784openalex-snapshot
Transparent IGZO-Based Logic Gates
inferred← citeshttps://doi.org/10.1109/led.2014.2364860openalex-snapshot
An Analytical Yield Model for Zero- $V_{\mathrm {GS}}$ -Load Thin-Film Transistor Logic Circuits
inferred← citeshttps://doi.org/10.1109/led.2018.2871053openalex-snapshot
Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption
inferred← citeshttps://doi.org/10.1109/lpt.2015.2453317openalex-snapshot
Amorphous Indium–Gallium–Oxide UV Photodetectors
inferred← citeshttps://doi.org/10.1109/photonics.2010.5698884openalex-snapshot
High-performance oxide TFTs based on solution-processed ZTO
inferred← citeshttps://doi.org/10.1109/ted.2008.2005158openalex-snapshot
Nanowire Transistor Performance Limits and Applications
inferred← citeshttps://doi.org/10.1109/ted.2008.926727openalex-snapshot
Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory
inferred← citeshttps://doi.org/10.1109/ted.2015.2493361openalex-snapshot
All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates
inferred← citeshttps://doi.org/10.1109/ted.2020.2978536openalex-snapshot
Low Operating Voltage Solution Processed (Li₂ZnO₂) Dielectric and (SnO₂) Channel-Based Medium Wave UV-B Phototransistor for Application in Phototherapy
inferred← citeshttps://doi.org/10.1116/1.2366569openalex-snapshot
Thin-film transistors with amorphous indium gallium oxide channel layers
inferred← citeshttps://doi.org/10.1116/1.3093887openalex-snapshot
Indium oxides by reactive ion beam assisted evaporation: From material study to device application
inferred← citeshttps://doi.org/10.1116/1.3467507openalex-snapshot
Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates
inferred← citeshttps://doi.org/10.1143/jjap.46.4096openalex-snapshot
Low-Voltage-Driven Bottom-Gate Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors with High Dielectric Constant Oxide/Polymer Double-Layer Dielectric
inferred← citeshttps://doi.org/10.1143/jjap.48.04c090openalex-snapshot
High-Mobility Transparent SnO2 and ZnO–SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators
inferred← citeshttps://doi.org/10.1143/jjap.48.100202openalex-snapshot
Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load
inferred← citeshttps://doi.org/10.1143/jjap.50.080202openalex-snapshot
Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors
inferred← citeshttps://doi.org/10.1149/1.3216049openalex-snapshot
Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics
inferred← citeshttps://doi.org/10.1149/1.3257613openalex-snapshot
High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
inferred← citeshttps://doi.org/10.1149/1.3373521openalex-snapshot
Coupling Top- and Bottom-Gate ZnO Thin Film Transistors for Low Voltage, High Gain Inverter
inferred← citeshttps://doi.org/10.1149/1.3447741openalex-snapshot
Wet Chemical Etching of Zn-Containing Oxide and HfO[sub 2] Films
inferred← citeshttps://doi.org/10.1149/2.0141804jssopenalex-snapshot
Self-Aligned Amorphous Indium-Tin-Zinc-Oxide Thin Film Transistors on Polyimide Foil
inferred← citeshttps://doi.org/10.1557/proc-1074-i05-35openalex-snapshot
High-mobility Nanocrystalline Indium Oxide TFTs with Silicon Nitride Gate Dielectric
inferred← citeshttps://doi.org/10.15761/fnn.1000106openalex-snapshot
Compositional tuning, properties and conversion of In2xga2-2xo3 Nanowires into I–III–VI2 Chalcopyrite Cu (Inxga1-X) S2
inferred← citeshttps://doi.org/10.1889/1.2785690openalex-snapshot
68.1: Invited Paper : Transparent Electronics — Display Applications?
inferred← citeshttps://doi.org/10.1889/1.2812992openalex-snapshot
Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O
inferred← citeshttps://doi.org/10.1889/1.3069352openalex-snapshot
P‐11: Amorphous In 2 O 3 ‐Ga 2 O 3 ‐ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide Substrates
inferred← citeshttps://doi.org/10.1889/jsid18.10.762openalex-snapshot
Low‐temperature sputtered mixtures of high‐κ and high bandgap dielectrics for GIZO TFTs
inferred← citeshttps://doi.org/10.32657/10356/63694openalex-snapshot
Amorphous indium gallium zinc oxide thin film transistor and memory device for future device applications
inferred← citeshttps://doi.org/10.3724/sp.j.1077.2009.09217openalex-snapshot
A Transparent PN Junction Based on Tin-antimony Oxide Films
inferred← citeshttps://doi.org/10.4028/www.scientific.net/kem.609-610.565openalex-snapshot
Fabrication and Characterization of Transparent ZnO Film Based Resistive Switching Devices
inferred← citeshttps://doi.org/10.7567/jjap.53.066506openalex-snapshot
Fabrication and characterization of thin-film transistors with SnO2channel by spray pyrolysis
inferred← citeshttps://doi.org/10.7567/jjap.53.08ng04openalex-snapshot
Effects of electron trapping and interface state generation on bias stress induced in indium–gallium–zinc oxide thin-film transistors
inferred← citeshttps://doi.org/10.9713/kcer.2011.49.5.600openalex-snapshot
A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method
Editorial review for independent work. ICSAC — the Institute for Complexity
Science and Advanced Computing — runs a structured editorial panel for researchers
publishing outside journals, and publishes on CiteStamp rails. Submission is free
and goes through ORCID: icsacinstitute.org/submit.