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Passivation of type II InAs/GaSb superlattice photodiodes
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1007/bf02651260openalex-snapshot
Passivation of GaSb by sulfur treatment
inferredcites →https://doi.org/10.1063/1.1362179openalex-snapshot
High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range
inferredcites →https://doi.org/10.1063/1.1448383openalex-snapshot
Sulphur passivation of the InGaAsSb/GaSb photodiodes
inferredcites →https://doi.org/10.1063/1.1476395openalex-snapshot
Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
inferredcites →https://doi.org/10.1063/1.1520699openalex-snapshot
Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
inferredcites →https://doi.org/10.1103/physrevb.56.1084openalex-snapshot
(NH 4)2Sx -treated InAs(001) surface studied by x-ray photoelectron spectroscopy and low-energy electron diffraction
inferredcites →https://doi.org/10.1116/1.581602openalex-snapshot
A (NH4)2Sx-treated InSb(001) surface studied by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and inverse photoemission spectroscopy
inferredcites →https://doi.org/10.1117/12.304477openalex-snapshot
InAs/Ga 1-x In x Sb infrared superlattice photodiodes for infrared detection
inferredcites →https://doi.org/10.1117/12.382114openalex-snapshot
Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range
inferredcites →https://doi.org/10.1117/12.429404openalex-snapshot
Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family
inferredcites →https://doi.org/10.1117/12.429406openalex-snapshot
High-performance type-II InAs/GaSb superlattice photodiodes
inferredcites →https://doi.org/10.1117/12.467673openalex-snapshot
Type-II InAs/GaSb superlattices and detectors with λc >18μm
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1002/adpr.70231openalex-snapshot
Recent Progress and Future Prospects of LWIR T2SL InAs/GaSb Detectors on GaAs
inferred← citeshttps://doi.org/10.1002/lpor.201100029openalex-snapshot
Passivation techniques for InAs/GaSb strained layer superlattice detectors
inferred← citeshttps://doi.org/10.1007/s00339-014-8442-zopenalex-snapshot
Passivation of InAs/GaSb type II superlattice photodiodes
inferred← citeshttps://doi.org/10.1007/s00340-010-3899-8openalex-snapshot
Mid infrared interband cascade lasers for sensing applications
inferred← citeshttps://doi.org/10.1007/s11664-009-0850-zopenalex-snapshot
Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes
inferred← citeshttps://doi.org/10.1016/b978-0-44-453153-7.00017-1openalex-snapshot
InAs/(In)GaSb Type II Strained Layer Superlattice Detectors
inferred← citeshttps://doi.org/10.1016/j.apsusc.2014.09.055openalex-snapshot
Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials
inferred← citeshttps://doi.org/10.1016/j.infrared.2005.01.003openalex-snapshot
InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
inferred← citeshttps://doi.org/10.1016/j.infrared.2010.05.002openalex-snapshot
GaSb for passivating type-II InAs/GaSb superlattice mesas
inferred← citeshttps://doi.org/10.1016/j.infrared.2010.12.023openalex-snapshot
InAs/GaSb superlattice based long-wavelength infrared detectors: Growth, processing, and characterization
inferred← citeshttps://doi.org/10.1016/j.infrared.2010.12.024openalex-snapshot
Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors
inferred← citeshttps://doi.org/10.1016/j.infrared.2014.09.027openalex-snapshot
Dual color longwave InAs/GaSb type-II strained layer superlattice detectors
inferred← citeshttps://doi.org/10.1016/j.infrared.2016.07.023openalex-snapshot
Type-II InAs/GaSb photodiode array pixel isolation by femto-second laser anneal
inferred← citeshttps://doi.org/10.1016/j.infrared.2017.12.020openalex-snapshot
Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL)
inferred← citeshttps://doi.org/10.1016/j.infrared.2018.01.007openalex-snapshot
The 640 × 512 LWIR type-II superlattice detectors operating at 110 K
inferred← citeshttps://doi.org/10.1016/j.infrared.2020.103277openalex-snapshot
Effects of etching processes on surface dark current of long-wave infrared InAs/GaSb superlattice detectors
inferred← citeshttps://doi.org/10.1016/j.infrared.2021.103724openalex-snapshot
Effective suppression of surface leakage currents in T2SL photodetectors with deep and vertical mesa sidewalls via TMA and H2 plasma combined pretreatment
inferred← citeshttps://doi.org/10.1016/j.jallcom.2015.01.137openalex-snapshot
Dark current mechanisms investigation of surface passivation InAs/GaSb photodiodes at low temperatures
inferred← citeshttps://doi.org/10.1016/j.spmi.2010.11.006openalex-snapshot
First-principles study of interface relaxation effect on interface and electronic structures of InAs/GaSb superlattices with different interface types
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2023.130257openalex-snapshot
Plasma Deposited Amorphous Silicon Passivation Layers on Inas Surfaces
inferred← citeshttps://doi.org/10.1016/j.tsf.2017.03.045openalex-snapshot
Dark current mechanisms and spectral response of SiO2-passivated photodiodes based on InAs/GaSb superlattice
inferred← citeshttps://doi.org/10.1016/j.tsf.2025.140698openalex-snapshot
SiO2 passivation and ionic-liquid gating for (In,Ga)As-InP narrow channels
inferred← citeshttps://doi.org/10.1049/el:20062495openalex-snapshot
Electrochemical sulphur passivation of InAs/GaSb strain layer superlattice detectors
inferred← citeshttps://doi.org/10.1063/1.1686894openalex-snapshot
Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
inferred← citeshttps://doi.org/10.1063/1.2089170openalex-snapshot
On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared
inferred← citeshttps://doi.org/10.1063/1.2335383openalex-snapshot
Surface passivation and capping of GaSb photodiode by chemical bath deposition of CdS
inferred← citeshttps://doi.org/10.1063/1.2747172openalex-snapshot
Near bulk-limited R0A of long-wavelength infrared type-II InAs∕GaSb superlattice photodiodes with polyimide surface passivation
inferred← citeshttps://doi.org/10.1063/1.2783767openalex-snapshot
Surface channel current in InAs∕GaSb type-II superlattice photodiodes
inferred← citeshttps://doi.org/10.1063/1.2977589openalex-snapshot
Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall
inferred← citeshttps://doi.org/10.1063/1.3270002openalex-snapshot
Emission wavelength tuning of interband cascade lasers in the 3–4 μm spectral range
inferred← citeshttps://doi.org/10.1063/1.3476342openalex-snapshot
Low dark current long-wave infrared InAs/GaSb superlattice detectors
inferred← citeshttps://doi.org/10.1063/1.3499290openalex-snapshot
Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation
inferred← citeshttps://doi.org/10.1063/1.3584853openalex-snapshot
Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes
inferred← citeshttps://doi.org/10.1063/1.3702567openalex-snapshot
Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors
inferred← citeshttps://doi.org/10.1063/1.4767905openalex-snapshot
Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors
inferred← citeshttps://doi.org/10.1063/1.4833026openalex-snapshot
Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array
inferred← citeshttps://doi.org/10.1063/1.4868486openalex-snapshot
Evaluating the size-dependent quantum efficiency loss in a SiO2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array
inferred← citeshttps://doi.org/10.1063/5.0094677openalex-snapshot
All-epitaxial, laterally structured plasmonic materials
inferred← citeshttps://doi.org/10.1088/0022-3727/45/36/365102openalex-snapshot
Skin-like self-assembled monolayers on InAs/GaSb superlattice photodetectors
inferred← citeshttps://doi.org/10.1088/0256-307x/37/6/068501openalex-snapshot
Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition*
inferred← citeshttps://doi.org/10.1088/0268-1242/24/6/065010openalex-snapshot
Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes
inferred← citeshttps://doi.org/10.1088/1361-6641/ab1bf8openalex-snapshot
Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors
inferred← citeshttps://doi.org/10.1088/1674-1056/26/4/047303openalex-snapshot
Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640 × 512 focal plane array
inferred← citeshttps://doi.org/10.1109/jphot.2021.3138946openalex-snapshot
Analysis of Size-Dependent Quantum Efficiency in AlGaInP Micro–Light-Emitting Diodes With Consideration for Current Leakage
inferred← citeshttps://doi.org/10.1109/jqe.2013.2267553openalex-snapshot
A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors
inferred← citeshttps://doi.org/10.1109/jqe.2019.2919771openalex-snapshot
Fabrication of 15-$\mu$ m Pitch $640\times512$ InAs/GaSb Type-II Superlattice Focal Plane Arrays
inferred← citeshttps://doi.org/10.1109/lpt.2018.2826528openalex-snapshot
Effect of SU-8 Passivation Layer Induced Stress on the Performance of GaSb Diode
inferred← citeshttps://doi.org/10.1116/1.2830627openalex-snapshot
nBn detectors based on InAs∕GaSb type-II strain layer superlattice
inferred← citeshttps://doi.org/10.1116/1.3276513openalex-snapshot
Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers
inferred← citeshttps://doi.org/10.1116/1.3669519openalex-snapshot
Chemical passivation of GaSb-based surfaces by atomic layer deposited ZnS using diethylzinc and hydrogen sulfide
inferred← citeshttps://doi.org/10.1116/1.4798485openalex-snapshot
High performance long-wave type-II superlattice infrared detectors
inferred← citeshttps://doi.org/10.1116/1.4891164openalex-snapshot
Atomic layer deposited passivation layers for superlattice photodetectors
inferred← citeshttps://doi.org/10.1117/12.2050490openalex-snapshot
Passivation of long-wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe
inferred← citeshttps://doi.org/10.1117/12.2050785openalex-snapshot
MWIR superlattice detectors integrated with substrate side-illuminated plasmonic coupler
inferred← citeshttps://doi.org/10.1117/12.2053190openalex-snapshot
Pretreatment for surface leakage current reduction in type-II superlattice MWIR photodetectors
inferred← citeshttps://doi.org/10.1117/12.2072179openalex-snapshot
Sulfurizing method for passivation used in InAs/GaSb type-II superlattice photodetectors
inferred← citeshttps://doi.org/10.1117/12.2178995openalex-snapshot
Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing
inferred← citeshttps://doi.org/10.1117/12.2179742openalex-snapshot
Studies on abrupt and gradual band gap hole barriers in InAs/GaSb superlattice long wavelength photodetectors
inferred← citeshttps://doi.org/10.1117/12.2180425openalex-snapshot
High performance InAs/GaSb superlattice long wavelength photodetectors based on barrier enhanced structures
inferred← citeshttps://doi.org/10.1117/12.2223389openalex-snapshot
Gibbs free energy assisted passivation layers
inferred← citeshttps://doi.org/10.1117/12.2225131openalex-snapshot
High operation temperature mid-wavelength interband cascade infrared photodetectors grown on InAs substrate
inferred← citeshttps://doi.org/10.1117/12.3013759openalex-snapshot
Type II strained layer superlattice planar diode fabrication via thermal diffusion of zinc
inferred← citeshttps://doi.org/10.1117/12.895448openalex-snapshot
Addressing surface leakage in type-II InAs/GaSb superlattice materials using novel approaches to surface passivation
inferred← citeshttps://doi.org/10.1143/jjap.48.06fd03openalex-snapshot
Novel Nano-structured Metal–Semiconductor–Metal Photodetector with High Peak Voltage
inferred← citeshttps://doi.org/10.1155/2014/246769openalex-snapshot
InAs/GaSb Type-II Superlattice Detectors
inferred← citeshttps://doi.org/10.2991/lemcs-15.2015.97openalex-snapshot
Sulfur Passivation of GaAsSb alloy layer Surfaces: Comparison of Ammonium Sulfide and Disulfur Dichloride Solutions
inferred← citeshttps://doi.org/10.70675/03370187z3aadz4763za985ze6d46104691dopenalex-snapshot
Long Wavelength QCLs for BTEX and Propane detection through QEPAS
inferred← citeshttps://doi.org/10.7567/1347-4065/ab3909openalex-snapshot
Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al 2 O 3 passivation
inferred← citeshttps://doi.org/10.7567/apex.6.032202openalex-snapshot
Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes
inferred← citeshttps://doi.org/10.7567/jjap.55.04eh07openalex-snapshot
Enhanced responsivity and detectivity values of short 30-period InAs/GaSb type-II infrared photodetectors with reduced device areas
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