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https://doi.org/10.2139/ssrn.4521664

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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/978-3-030-51903-2openalex-extracted
III–V Compound Semiconductors and Devices
inferredcites →https://doi.org/10.1007/s11664-011-1653-6openalex-extracted
Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
inferredcites →https://doi.org/10.1016/0040-6090(82)90297-8openalex-extracted
Condensed phase diagram for the In-As-O system
inferredcites →https://doi.org/10.1016/0040-6090(83)90420-0openalex-extracted
Analysis of native oxide films and oxide-substrate reactions on III–V semiconductors using thermochemical phase diagrams
inferredcites →https://doi.org/10.1016/j.apsusc.2013.04.018openalex-extracted
Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition
inferredcites →https://doi.org/10.1016/j.jcrysgro.2021.126338openalex-extracted
Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching
inferredcites →https://doi.org/10.1016/j.sse.2021.108077openalex-extracted
III-V-on-Si transistor technologies: Performance boosters and integration
inferredcites →https://doi.org/10.1016/j.tca.2003.12.016openalex-extracted
Thermal behaviour of arsenic oxides (As2O5 and As2O3) and the influence of reducing agents (glucose and activated carbon)
inferredcites →https://doi.org/10.1016/j.tsf.2003.09.002openalex-extracted
Passivation of type II InAs/GaSb superlattice photodiodes
inferredcites →https://doi.org/10.1038/srep09052openalex-extracted
The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.124992openalex-extracted
Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane
inferredcites →https://doi.org/10.1063/1.1368156openalex-extracted
Band parameters for III–V compound semiconductors and their alloys
inferredcites →https://doi.org/10.1063/1.2838294openalex-extracted
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
inferredcites →https://doi.org/10.1063/1.3345084openalex-extracted
Properties of inductively coupled rf Ar/H2 plasmas: Experiment and global model
inferredcites →https://doi.org/10.1063/1.4898082openalex-extracted
Native point defects in GaSb
inferredcites →https://doi.org/10.1063/1.5054292openalex-extracted
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
inferredcites →https://doi.org/10.1088/0963-0252/19/6/065008openalex-extracted
Low pressure hydrogen discharges diluted with argon explored using a global model
inferredcites →https://doi.org/10.1088/0963-0252/22/5/055009openalex-extracted
A global model study of silane/hydrogen discharges
inferredcites →https://doi.org/10.1088/1361-648x/aac5b4openalex-extracted
III–V heterostructure tunnel field-effect transistor
inferredcites →https://doi.org/10.1103/physrevb.73.195321openalex-extracted
Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states
inferredcites →https://doi.org/10.1109/led.2006.870243openalex-extracted
Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer
inferredcites →https://doi.org/10.1116/1.586238openalex-extracted
Are there Tamm-state donors at the InAs–AlSb quantum well interface?
inferredcites →https://doi.org/10.1149/1.3076194openalex-extracted
InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100°C Treatment
inferredcites →https://doi.org/10.1149/2.0081506jssopenalex-extracted
Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100)
inferredcites →https://doi.org/10.1155/2014/246769openalex-extracted
InAs/GaSb Type-II Superlattice Detectors
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