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Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

https://doi.org/10.1016/j.tsf.2016.01.035

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adma.200400368openalex-snapshot

Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature

inferredcites →https://doi.org/10.1016/j.sse.2010.08.001openalex-snapshot

Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

inferredcites →https://doi.org/10.1016/s1369-7021(11)70302-9openalex-snapshot

Developments in nanocrystal memory

inferredcites →https://doi.org/10.1038/nature03090openalex-snapshot

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

inferredcites →https://doi.org/10.1063/1.108709openalex-snapshot

Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors

inferredcites →https://doi.org/10.1063/1.1542677openalex-snapshot

ZnO-based transparent thin-film transistors

inferredcites →https://doi.org/10.1063/1.2964197openalex-snapshot

p -channel thin-film transistor using p-type oxide semiconductor, SnO

inferredcites →https://doi.org/10.1063/1.2977865openalex-snapshot

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

inferredcites →https://doi.org/10.1063/1.3124658openalex-snapshot

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

inferredcites →https://doi.org/10.1063/1.3187532openalex-snapshot

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

inferredcites →https://doi.org/10.1063/1.3357431openalex-snapshot

Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

inferredcites →https://doi.org/10.1063/1.3456379openalex-snapshot

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

inferredcites →https://doi.org/10.1063/1.3457996openalex-snapshot

Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

inferredcites →https://doi.org/10.1063/1.3514251openalex-snapshot

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

inferredcites →https://doi.org/10.1063/1.3609873openalex-snapshot

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

inferredcites →https://doi.org/10.1063/1.4812474openalex-snapshot

Performance and characteristics of double layer porous silicon oxide resistance random access memory

inferredcites →https://doi.org/10.1063/1.4813090openalex-snapshot

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

inferredcites →https://doi.org/10.1063/1.4824329openalex-snapshot

Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor

inferredcites →https://doi.org/10.1063/1.4825104openalex-snapshot

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

inferredcites →https://doi.org/10.1063/1.4863682openalex-snapshot

Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

inferredcites →https://doi.org/10.1063/1.4868430openalex-snapshot

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

inferredcites →https://doi.org/10.1063/1.4883899openalex-snapshot

Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

inferredcites →https://doi.org/10.1109/led.2011.2104936openalex-snapshot

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

inferredcites →https://doi.org/10.1109/led.2012.2193112openalex-snapshot

Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

inferredcites →https://doi.org/10.1109/led.2012.2223654openalex-snapshot

Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors

inferredcites →https://doi.org/10.1109/led.2013.2241725openalex-snapshot

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

inferredcites →https://doi.org/10.1109/led.2013.2248341openalex-snapshot

Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

inferredcites →https://doi.org/10.1109/led.2013.2251995openalex-snapshot

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

inferredcites →https://doi.org/10.1109/led.2013.2295378openalex-snapshot

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

inferredcites →https://doi.org/10.1109/ted.2013.2253611openalex-snapshot

Characterization and Investigation of a Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors

inferredcites →https://doi.org/10.1116/1.3097852openalex-snapshot

Transfer characteristics and bias-stress stability of amorphous indium zinc oxide thin-film transistors

inferredcites →https://doi.org/10.1143/jjap.48.011301openalex-snapshot

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4 Thin-Film Transistors

inferredcites →https://doi.org/10.1186/1556-276x-8-1openalex-snapshot

Transport properties of two finite armchair graphene nanoribbons

inferredcites →https://doi.org/10.1186/1556-276x-8-523openalex-snapshot

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

inferredcites →https://doi.org/10.1889/1.2785691openalex-snapshot

68.2: 3.5 Inch QCIF+ AM‐OLED Panel Based on Oxide TFT Backplane

inferredcites →https://doi.org/10.1889/1.2812992openalex-snapshot

Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O

inferredcites →https://doi.org/10.7567/jjap.54.094101openalex-snapshot

Investigation of carrier transport behavior in amorphous indium–gallium–zinc oxide thin film transistors

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4675787openalex-extracted

Impact of Constant Bias Stress on Reliability of A-Igzo Thin-Film Transistors

inferred← citeshttps://doi.org/10.1016/j.mee.2025.112331openalex-snapshot

Impact of constant bias stress on reliability of IGZO thin-film transistors on softening polymer

inferred← citeshttps://doi.org/10.1016/j.sse.2018.12.001openalex-snapshot

Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors

inferred← citeshttps://doi.org/10.1109/led.2017.2786547openalex-snapshot

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

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