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Electrical Control of Uniformity in Quantum Dot Devices
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1021/acs.nanolett.1c03026openalex-snapshot
A Flexible Design Platform for Si/SiGe Exchange-Only Qubits with Low Disorder
inferredcites →https://doi.org/10.1021/acs.nanolett.2c04446openalex-snapshot
Electrical Control of Uniformity in Quantum Dot Devices
inferredcites →https://doi.org/10.1038/nnano.2014.216openalex-snapshot
An addressable quantum dot qubit with fault-tolerant control-fidelity
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Silicon CMOS architecture for a spin-based quantum computer
inferredcites →https://doi.org/10.1038/s41467-019-08970-zopenalex-snapshot
Shuttling a single charge across a one-dimensional array of silicon quantum dots
inferredcites →https://doi.org/10.1038/s41467-020-20280-3openalex-snapshot
Single-electron operations in a foundry-fabricated array of quantum dots
inferredcites →https://doi.org/10.1038/s41467-022-35458-0openalex-snapshot
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
inferredcites →https://doi.org/10.1038/s41467-023-39334-3openalex-snapshot
Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold
inferredcites →https://doi.org/10.1038/s41534-017-0038-yopenalex-snapshot
Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent
inferredcites →https://doi.org/10.1038/s41534-022-00597-1openalex-snapshot
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
inferredcites →https://doi.org/10.1038/s41565-017-0014-xopenalex-snapshot
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%
inferredcites →https://doi.org/10.1038/s41565-021-00925-0openalex-snapshot
Quantum tomography of an entangled three-qubit state in silicon
inferredcites →https://doi.org/10.1038/s41565-023-01491-3openalex-snapshot
Shared control of a 16 semiconductor quantum dot crossbar array
inferredcites →https://doi.org/10.1038/s41578-020-00262-zopenalex-snapshot
The germanium quantum information route
inferredcites →https://doi.org/10.1038/s41586-020-2170-7openalex-snapshot
Universal quantum logic in hot silicon qubits
inferredcites →https://doi.org/10.1038/s41586-020-2171-6openalex-snapshot
Operation of a silicon quantum processor unit cell above one kelvin
inferredcites →https://doi.org/10.1038/s41586-021-03332-6openalex-snapshot
A four-qubit germanium quantum processor
inferredcites →https://doi.org/10.1038/s41586-021-04182-yopenalex-snapshot
Fast universal quantum gate above the fault-tolerance threshold in silicon
inferredcites →https://doi.org/10.1038/s41586-021-04273-wopenalex-snapshot
Quantum logic with spin qubits crossing the surface code threshold
inferredcites →https://doi.org/10.1038/s41586-021-04292-7openalex-snapshot
Precision tomography of a three-qubit donor quantum processor in silicon
inferredcites →https://doi.org/10.1038/s41586-022-05117-xopenalex-snapshot
Universal control of a six-qubit quantum processor in silicon
inferredcites →https://doi.org/10.1038/s41928-022-00722-0openalex-snapshot
A hole spin qubit in a fin field-effect transistor above 4 kelvin
inferredcites →https://doi.org/10.1038/s41928-022-00727-9openalex-snapshot
Qubits made by advanced semiconductor manufacturing
inferredcites →https://doi.org/10.1038/s42254-022-00484-wopenalex-snapshot
Review of performance metrics of spin qubits in gated semiconducting nanostructures
inferredcites →https://doi.org/10.1063/1.121944openalex-snapshot
Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films
inferredcites →https://doi.org/10.1063/1.1604480openalex-snapshot
Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors
inferredcites →https://doi.org/10.1063/1.1621718openalex-snapshot
Stress induced charge trapping effects in SiO2/Al2O3 gate stacks with TiN electrodes
inferredcites →https://doi.org/10.1063/1.1651913openalex-snapshot
SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING
inferredcites →https://doi.org/10.1063/1.3652909openalex-snapshot
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
inferredcites →https://doi.org/10.1063/1.4880739openalex-snapshot
Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface
inferredcites →https://doi.org/10.1063/1.4884650openalex-snapshot
Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer
inferredcites →https://doi.org/10.1063/1.4928320openalex-snapshot
Formation of strain-induced quantum dots in gated semiconductor nanostructures
inferredcites →https://doi.org/10.1063/1.4933026openalex-snapshot
Scattering mechanisms in shallow undoped Si/SiGe quantum wells
inferredcites →https://doi.org/10.1063/1.5018636openalex-snapshot
Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure
inferredcites →https://doi.org/10.1063/1.5094848openalex-snapshot
Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening
inferredcites →https://doi.org/10.1063/5.0002013openalex-snapshot
Quantum dot arrays in silicon and germanium
inferredcites →https://doi.org/10.1063/5.0036520openalex-snapshot
Self-aligned gates for scalable silicon quantum computing
inferredcites →https://doi.org/10.1063/5.0061369openalex-snapshot
Alternatives to aluminum gates for silicon quantum devices: Defects and strain
inferredcites →https://doi.org/10.1063/5.0088576openalex-snapshot
Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap
inferredcites →https://doi.org/10.1088/1361-6528/abb559openalex-snapshot
Fabrication process and failure analysis for robust quantum dots in silicon
inferredcites →https://doi.org/10.1088/1367-2630/18/10/103018openalex-snapshot
Optimization of a solid-state electron spin qubit using gate set tomography
inferredcites →https://doi.org/10.1103/physrevapplied.12.064049openalex-snapshot
Measurements of Capacitive Coupling Within a Quadruple-Quantum-Dot Array
inferredcites →https://doi.org/10.1103/physrevapplied.6.054013openalex-snapshot
Scalable Gate Architecture for a One-Dimensional Array of Semiconductor Spin Qubits
inferredcites →https://doi.org/10.1103/physrevb.72.115331openalex-snapshot
Origin of switching noise in GaAs∕AlxGa1−xAs lateral gated devices
inferredcites →https://doi.org/10.1103/physrevmaterials.1.044601openalex-snapshot
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
inferredcites →https://doi.org/10.1103/revmodphys.85.961openalex-snapshot
Silicon quantum electronics
inferredcites →https://doi.org/10.1109/irps.2014.6861098openalex-snapshot
Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3
inferredcites →https://doi.org/10.1109/relphy.2008.4558858openalex-snapshot
Ubiquitous relaxation in BTI stressing—New evaluation and insights
inferredcites →https://doi.org/10.1109/ted.2014.2356172openalex-snapshot
Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
inferredcites →https://doi.org/10.1116/1.575701openalex-snapshot
Electron spin resonance of inherent and process induced defects near the Si/SiO2 interface of oxidized silicon wafers
inferredcites →https://doi.org/10.1116/1.590301openalex-snapshot
What can electron paramagnetic resonance tell us about the Si/SiO2 system?
inferredcites →https://doi.org/10.1126/sciadv.1500707openalex-snapshot
A surface code quantum computer in silicon
inferredcites →https://doi.org/10.1126/sciadv.aar3960openalex-snapshot
A crossbar network for silicon quantum dot qubits
inferredcites →https://doi.org/10.1557/mrc.2014.32openalex-snapshot
Isotope engineering of silicon and diamond for quantum computing and sensing applications
inferredcites →https://doi.org/10.1557/s43577-021-00147-8openalex-snapshot
Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1007/s11082-024-07412-5openalex-snapshot
Resonant Coulomb interaction of excitonic and charge qubits on quantum dots
inferred← citeshttps://doi.org/10.1016/j.chip.2025.100169openalex-snapshot
Low-dimensional silicon for neuromorphic computing
inferred← citeshttps://doi.org/10.1016/j.eurpolymj.2024.112958openalex-snapshot
Poly(dimethyl siloxane)-based copolymer dielectric composites with copper sulfide loaded carbon nanotubes doped with carbon quantum dots
inferred← citeshttps://doi.org/10.1016/j.mattod.2025.10.004openalex-snapshot
Hole mobility in compressively strained germanium on silicon exceeds 7 × 106 cm2V-1s−1
inferred← citeshttps://doi.org/10.1021/acs.nanolett.3c03349openalex-snapshot
Single-Electron Occupation in Quantum Dot Arrays at Selectable Plunger Gate Voltage
inferred← citeshttps://doi.org/10.1021/acs.nanolett.3c04831openalex-snapshot
Manipulations of Electronic and Spin States in Co-Quantum Dot/WS2 Heterostructure on a Metal-Dielectric Composite Substrate by Controlling Interfacial Carriers
inferred← citeshttps://doi.org/10.1021/acsami.3c06725openalex-snapshot
Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon–Germanium Quantum Dot Qubits
inferred← citeshttps://doi.org/10.1021/acsami.3c14168openalex-snapshot
Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions
inferred← citeshttps://doi.org/10.1038/s41534-024-00826-9openalex-snapshot
Low disorder and high valley splitting in silicon
inferred← citeshttps://doi.org/10.1038/s43246-024-00563-8openalex-snapshot
Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures
inferred← citeshttps://doi.org/10.1063/5.0250968openalex-snapshot
Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices
inferred← citeshttps://doi.org/10.1088/1361-6641/ae0515openalex-snapshot
Suppression of charges within an Al 2 O 3 high- κ dielectric and reduction of interface traps at the cryogenic temperature of a Ge n-MOS capacitor fabricated by plasma postoxidation and forming gas annealing
inferred← citeshttps://doi.org/10.1088/1612-202x/ade078openalex-snapshot
Tunnel-optical electron transitions in an asymmetric double quantum dot under correction field
inferred← citeshttps://doi.org/10.1088/1612-202x/ae2458openalex-snapshot
Electric and temperature control of parameters of a charge qubit in a microresonator under technological deviations
inferred← citeshttps://doi.org/10.1088/1674-1056/add4deopenalex-snapshot
Impact of surface passivation on the electrical stability of strained germanium devices
inferred← citeshttps://doi.org/10.1103/physrevapplied.20.024056openalex-snapshot
Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices
inferred← citeshttps://doi.org/10.1103/physrevapplied.21.014052openalex-snapshot
Gate-tunable kinetic inductance parametric amplifier
inferred← citeshttps://doi.org/10.1103/physrevapplied.22.024030openalex-snapshot
Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout
inferred← citeshttps://doi.org/10.1103/physrevapplied.22.034044openalex-snapshot
Control of threshold voltages in Si / Si 0.7 Ge 0.3 quantum devices via optical illumination
inferred← citeshttps://doi.org/10.1103/physrevb.109.245401openalex-snapshot
Extended Hubbard model describing small multidot arrays in bilayer graphene
inferred← citeshttps://doi.org/10.1103/physrevresearch.6.033175openalex-snapshot
Decoherence induced by a sparse bath of two-level fluctuators: Peculiar features of 1 / f noise in high-quality qubits
inferred← citeshttps://doi.org/10.1103/qwgc-mwznopenalex-snapshot
Disorder-independent hole-spin manipulation by hopping
inferred← citeshttps://doi.org/10.1103/x86t-n64xopenalex-snapshot
Statistical structure of charge disorder in Si / Si - Ge quantum dots
inferred← citeshttps://doi.org/10.1109/irps48204.2025.10982705openalex-snapshot
CV Characterization of Si/SiGe Heterostructures at Cryo Temperatures
inferred← citeshttps://doi.org/10.1109/tqe.2025.3580377openalex-snapshot
Cryo-CMOS Bias-Voltage Generation and Demultiplexing at mK Temperatures for Large-Scale Arrays of Quantum Devices
inferred← citeshttps://doi.org/10.1145/3624484openalex-snapshot
SpinQ: Compilation Strategies for Scalable Spin-Qubit Architectures
inferred← citeshttps://doi.org/10.1557/s43577-023-00659-5openalex-snapshot
Challenges in advancing our understanding of atomic-like quantum systems: Theory and experiment
inferred← citeshttps://doi.org/10.54097/1zwmdk05openalex-snapshot
Research On Linear Potential Model and Its Application
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