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Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells

https://doi.org/10.1021/acsaem.2c01631
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pip.3097openalex-snapshot
Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD
inferredcites →https://doi.org/10.1002/solr.202100644openalex-snapshot
Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells
inferredcites →https://doi.org/10.1007/978-1-4613-1841-5_68openalex-snapshot
Composition and Thermal Stability of Glow-Discharge a-Si:C:H and a-Si:N:H Alloys
inferredcites →https://doi.org/10.1016/0022-3093(83)90547-1openalex-snapshot
The role of hydrogen in a-Si:H — results of evolution and annealing studies
inferredcites →https://doi.org/10.1016/0040-6090(89)90030-8openalex-snapshot
Stress-related effects in thin films
inferredcites →https://doi.org/10.1016/j.joule.2021.02.013openalex-snapshot
Polysilicon passivated junctions: The next technology for silicon solar cells?
inferredcites →https://doi.org/10.1016/j.solener.2021.11.045openalex-snapshot
In situ phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells
inferredcites →https://doi.org/10.1016/j.solmat.2016.06.040openalex-snapshot
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
inferredcites →https://doi.org/10.1016/j.solmat.2017.06.039openalex-snapshot
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
inferredcites →https://doi.org/10.1016/j.solmat.2019.01.005openalex-snapshot
High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion
inferredcites →https://doi.org/10.1016/j.solmat.2019.109912openalex-snapshot
Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells
inferredcites →https://doi.org/10.1016/j.solmat.2019.110389openalex-snapshot
Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact
inferredcites →https://doi.org/10.1016/j.solmat.2022.111637openalex-snapshot
An electron-selective SiC /SiO contact for Si solar cells made with fully industrial techniques
inferredcites →https://doi.org/10.1016/j.tsf.2008.07.014openalex-snapshot
Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers
inferredcites →https://doi.org/10.1016/s0022-3093(99)00853-4openalex-snapshot
Infrared absorption and hydrogen effusion of hydrogenated amorphous silicon-oxide films
inferredcites →https://doi.org/10.1021/acsaem.1c00265openalex-snapshot
Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells
inferredcites →https://doi.org/10.1021/acsami.6b12714openalex-snapshot
Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells
inferredcites →https://doi.org/10.1038/s41560-018-0239-4openalex-snapshot
A passivating contact for silicon solar cells formed during a single firing thermal annealing
inferredcites →https://doi.org/10.1038/s41598-020-66801-4openalex-snapshot
Formation and suppression of hydrogen blisters in tunnelling oxide passivating contact for crystalline silicon solar cells
inferredcites →https://doi.org/10.1063/1.1596364openalex-snapshot
Determining the material structure of microcrystalline silicon from Raman spectra
inferredcites →https://doi.org/10.1063/1.328767openalex-snapshot
Formation of pin holes in hydrogenated amorphous silicon at high temperatures and the yield strength of a-Si:H.
inferredcites →https://doi.org/10.1063/1.371463openalex-snapshot
Coefficient of thermal expansion and elastic modulus of thin films
inferredcites →https://doi.org/10.1063/1.5027547openalex-snapshot
Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cells
inferredcites →https://doi.org/10.1103/physrevb.28.3225openalex-snapshot
Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films
inferredcites →https://doi.org/10.1109/jphotov.2018.2866189openalex-snapshot
Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiC x Passivating Contacts
inferredcites →https://doi.org/10.1109/jphotov.2018.2886234openalex-snapshot
Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells
inferredcites →https://doi.org/10.1109/pvsc40753.2019.8980861openalex-snapshot
Investigation of 23% monoPoly Screen-Printed Silicon Solar Cells with an Industrial Rear Passivated Contact
inferredcites →https://doi.org/10.1155/2007/69578openalex-snapshot
Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells
inferredcites →https://doi.org/10.1155/apec.3.21openalex-snapshot
Adhesion Measurement of Thin Films

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4685629openalex-extracted
In-Situ Phosphorus Doped Poly-Si Films by Pecvd for Blistering-Free High-Efficiency Industrial Topcon Solar Cells
inferred← citeshttps://doi.org/10.1002/adma.73918openalex-snapshot
Nitrogen‐Incorporated Silicon Dioxide Interlayer Enables Pinhole‐Reduced and Robust TOPCon With a High Implied Open‐Circuit Voltage over 760 mV
inferred← citeshttps://doi.org/10.1016/j.solmat.2024.112771openalex-snapshot
Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells
inferred← citeshttps://doi.org/10.1016/j.solmat.2024.113024openalex-snapshot
Improving the performance of industrial TOPCon solar cells through the insertion of intrinsic a-Si layer
inferred← citeshttps://doi.org/10.1016/j.solmat.2024.113068openalex-snapshot
Optimizing phosphorus-doped polysilicon in TOPCon structures using silicon oxide layers to improve silicon solar cell performance
inferred← citeshttps://doi.org/10.1016/j.solmat.2025.113600openalex-snapshot
Enhancing passivation and reducing absorption losses in TOPCon solar cells via Poly-Si finger structure
inferred← citeshttps://doi.org/10.1016/j.solmat.2026.114223openalex-snapshot
Heated ITO depositions onto poly-Si passivated contacts enabling efficient 16-cm2 perovskite/silicon tandem solar cells
inferred← citeshttps://doi.org/10.35848/1347-4065/adc00eopenalex-snapshot
Suppression of film blistering in silicon nano-crystals/silicon oxide composite layer by insertion of intrinsic hydrogenated amorphous silicon layer
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