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Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios

https://doi.org/10.1021/acsomega.2c01890

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adma.200501803openalex-snapshot

Aligned AlN Nanorods with Multi‐tipped Surfaces—Growth, Field‐Emission, and Cathodoluminescence Properties

inferredcites →https://doi.org/10.1007/s00214-013-1419-8openalex-snapshot

CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

inferredcites →https://doi.org/10.1016/0022-3697(87)90153-3openalex-snapshot

The intrinsic thermal conductivity of AIN

inferredcites →https://doi.org/10.1016/0040-6090(94)06480-6openalex-snapshot

Study of the oxidation of aluminium nitride coatings at high temperature

inferredcites →https://doi.org/10.1016/b978-0-08-018786-0.50001-4openalex-snapshot

Comprehensive Inorganic Chemistry

inferredcites →https://doi.org/10.1016/j.cocom.2018.02.002openalex-snapshot

Charged vacancy defects in an AlN nanosheet: A first-principles DFT study

inferredcites →https://doi.org/10.1016/j.jallcom.2007.11.007openalex-snapshot

Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method

inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.11.013openalex-snapshot

Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio

inferredcites →https://doi.org/10.1016/j.jcrysgro.2007.01.019openalex-snapshot

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

inferredcites →https://doi.org/10.1016/j.spmi.2016.02.050openalex-snapshot

Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

inferredcites →https://doi.org/10.1016/j.tsf.2014.11.022openalex-snapshot

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

inferredcites →https://doi.org/10.1016/j.vacuum.2008.09.003openalex-snapshot

The influence of defects and impurities in polycrystalline AlN films on the violet and blue photoluminescence

inferredcites →https://doi.org/10.1016/s0167-9317(03)00386-1openalex-snapshot

Integrated approach to electrode and AlN depositions for bulk acoustic wave (BAW) devices

inferredcites →https://doi.org/10.1016/s0257-8972(98)00527-1openalex-snapshot

Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection

inferredcites →https://doi.org/10.1017/s0885715613000687openalex-snapshot

Ultraviolet emission from high-quality crystalline ultra-long AlN whiskers

inferredcites →https://doi.org/10.1021/acs.cgd.6b00979openalex-snapshot

Control of Crystal Morphologies and Interface Structures of AlN Grown on Sapphire by Elementary Source Vapor Phase Epitaxy

inferredcites →https://doi.org/10.1038/srep17405openalex-snapshot

Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy

inferredcites →https://doi.org/10.1063/1.1311948openalex-snapshot

Phonon lifetimes in bulk AlN and their temperature dependence

inferredcites →https://doi.org/10.1063/1.1922577openalex-snapshot

Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate

inferredcites →https://doi.org/10.1063/1.2190452openalex-snapshot

Deep ultraviolet photoluminescence studies of AlN photonic crystals

inferredcites →https://doi.org/10.1063/1.2404938openalex-snapshot

Defect and stress characterization of AlN films by Raman spectroscopy

inferredcites →https://doi.org/10.1063/1.3686144openalex-snapshot

First-principles study on electronic structures and magnetic properties of AlN nanosheets and nanoribbons

inferredcites →https://doi.org/10.1063/5.0048656openalex-snapshot

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

inferredcites →https://doi.org/10.1088/0953-8984/14/38/201openalex-snapshot

Properties of GaN and related compounds studied by means of Raman scattering

inferredcites →https://doi.org/10.1088/0957-4484/17/11/s20openalex-snapshot

Annealing effects on the field emission properties of AlN nanorods

inferredcites →https://doi.org/10.1103/physrevb.63.125313openalex-snapshot

Vibrational properties of AlN grown on (111)-oriented silicon

inferredcites →https://doi.org/10.1134/s0020168506060094openalex-snapshot

Chemical vapor deposition and photoluminescent properties of polycrystalline AlN films

inferredcites →https://doi.org/10.1142/s0217979298001137openalex-snapshot

Micro-Raman Scattering Properties of Highly Oriented AlN Films

inferredcites →https://doi.org/10.1143/apex.4.031001openalex-snapshot

Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films

inferredcites →https://doi.org/10.1557/s1092578300001873openalex-snapshot

PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN

inferredcites →https://doi.org/10.3390/cryst7050123openalex-snapshot

Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4485856openalex-extracted

Simulation and Growth Study of Flux Rate Effects on Mnvpe Grown Aln

inferred← citeshttps://doi.org/10.2139/ssrn.4791235openalex-extracted

Influence of Porous Media and Substrate Rotation on Aln Deposition in Mnvpe Reactors Based on Cfd Simulations

inferred← citeshttps://doi.org/10.1002/adfm.202403474openalex-snapshot

Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures

inferred← citeshttps://doi.org/10.1002/crat.202200196openalex-snapshot

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

inferred← citeshttps://doi.org/10.1002/pssa.202300060openalex-snapshot

Seeded Growth of AlN Layers on Al‐ and N‐Polar AlN Seeds by the Cu–Al–Ca Solution Growth Method

inferred← citeshttps://doi.org/10.1002/pssa.70562openalex-snapshot

Stress State and Cathodoluminescence Properties of Sm 3+ /Eu 3+ Co‐Doped AlN Thin Films

inferred← citeshttps://doi.org/10.1016/b978-0-323-96027-4.00007-3openalex-snapshot

Growth of bulk AlN crystals

inferred← citeshttps://doi.org/10.1016/j.ceramint.2026.02.123openalex-snapshot

Plasma-assisted polishing with self-limiting surface modification for sub-nanometer finishing of AlN ceramics

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2023.127451openalex-snapshot

Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2025.128352openalex-snapshot

Effect of flow–substrate angle on the growth quality of AlN films in a horizontal MNVPE reactor

inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107843openalex-snapshot

Effect of flux rate on the growth of AlN films on sapphire by MNVPE

inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108682openalex-snapshot

Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations

inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109304openalex-snapshot

Multipath-induced c-axis orientation of aluminum nitride films deposited using direct-current magnetron sputtering

inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109529openalex-snapshot

Effects of a 50 nm AlN intermediate layer on the properties of Al1-xScxN films with varying Sc concentrations

inferred← citeshttps://doi.org/10.1021/acs.cgd.3c01446openalex-snapshot

Relationship between Annealing and V/III Ratios during MNVPE of AlN Films

inferred← citeshttps://doi.org/10.1080/1536383x.2026.2618592openalex-snapshot

Novel interfacial modification for enhancing thermal properties of TiC @diamond/Cu composites

inferred← citeshttps://doi.org/10.3390/ma16155225openalex-snapshot

Study of the Influence of the Irradiation Flux Density on the Formation of a Defect Structure in AlN in the Case of the Effect of Overlapping of the Heavy Ion Motion Trajectories in the Near-Surface Layer

inferred← citeshttps://doi.org/10.3390/ma16196362openalex-snapshot

Study of the Relationship between Changes in the Structural, Optical, and Strength Properties of AlN Ceramics Subjected to Irradiation with Heavy Xe23+ Ions

inferred← citeshttps://doi.org/10.3390/photonics11121161openalex-snapshot

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

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