On the public citation graph

Simulation and Growth Study of Flux Rate Effects on Mnvpe Grown Aln

https://doi.org/10.2139/ssrn.4485856
0 signed · 23 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/crat.202200196openalex-extracted
AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy
inferredcites →https://doi.org/10.1007/s00214-013-1419-8openalex-extracted
CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation
inferredcites →https://doi.org/10.1016/j.icheatmasstransfer.2009.03.019openalex-extracted
Effect of embedding a porous medium on the deposition rate in a vertical rotating MOCVD reactor based on CFD modeling
inferredcites →https://doi.org/10.1016/j.jallcom.2019.04.250openalex-extracted
High-aspect-ratio single-crystalline AlN nanowires: Free-catalytic PVT growth and field-emission studies
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.03.007openalex-extracted
Numerical investigations of geometric effects on flow and thermal fields in a horizontal CVD reactor
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.06.014openalex-extracted
Native oxide and hydroxides and their implications for bulk AlN crystal growth
inferredcites →https://doi.org/10.1016/j.jcrysgro.2020.125726openalex-extracted
Low temperature deposition of high quality single crystalline AlN thin films on sapphire using highly oriented monolayer MoS2 as a buffer layer
inferredcites →https://doi.org/10.1016/j.mseb.2022.115635openalex-extracted
High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics
inferredcites →https://doi.org/10.1016/j.pcrysgrow.2020.100486openalex-extracted
Progress in Modeling of III-Nitride MOVPE
inferredcites →https://doi.org/10.1016/j.surfcoat.2010.08.049openalex-extracted
Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation
inferredcites →https://doi.org/10.1021/acs.cgd.6b00979openalex-extracted
Control of Crystal Morphologies and Interface Structures of AlN Grown on Sapphire by Elementary Source Vapor Phase Epitaxy
inferredcites →https://doi.org/10.1021/acsomega.2c01890openalex-extracted
Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios
inferredcites →https://doi.org/10.1021/cg5016274openalex-extracted
AlN Nanostructures Fabricated on a Vicinal Sapphire (0001) Substrate
inferredcites →https://doi.org/10.1039/c8ce02192aopenalex-extracted
Investigation of hydride vapor phase epitaxial growth of AlN on sputtered AlN buffer layers
inferredcites →https://doi.org/10.1063/1.1509863openalex-extracted
Room-temperature epitaxial growth of AlN films
inferredcites →https://doi.org/10.1063/1.4825282openalex-extracted
A realizable explicit algebraic Reynolds stress model for compressible turbulent flow with significant mean dilatation
inferredcites →https://doi.org/10.1149/10407.0057ecstopenalex-extracted
Prismatic Slip in AlN Crystals Grown By PVT
inferredcites →https://doi.org/10.31349/revmexfis.65.345openalex-extracted
Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target
inferredcites →https://doi.org/10.3390/coatings12070924openalex-extracted
Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H2 and N2 Reaction Environment
inferredcites →https://doi.org/10.3390/coatings7090136openalex-extracted
Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach
inferredcites →https://doi.org/10.3390/mi14020467openalex-extracted
Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing
inferredcites →https://doi.org/10.3938/npsm.68.39openalex-extracted
Growth of an AlN Epilayer by Using Mixed-Source Hydride Vapor Phase Epitaxy
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.999.129openalex-extracted
Computer Simulation of Horizontal VPE Grown AlN
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.