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AlN Nanostructures Fabricated on a Vicinal Sapphire (0001) Substrate

https://doi.org/10.1021/cg5016274
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/9783527628445openalex-snapshot
Handbook of Nitride Semiconductors and Devices
inferredcites →https://doi.org/10.1002/aic.10271openalex-snapshot
Submillimeter‐scale combustion
inferredcites →https://doi.org/10.1002/pssa.200622246openalex-snapshot
Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers
inferredcites →https://doi.org/10.1002/pssc.200565357openalex-snapshot
Growth of high‐quality AlN at high growth rate by high‐temperature MOVPE
inferredcites →https://doi.org/10.1002/pssc.200778658openalex-snapshot
High‐temperature growth of AlN in a production scale 11 × 2′ MOVPE reactor
inferredcites →https://doi.org/10.1002/pssc.201001186openalex-snapshot
Control of AlN buffer/sapphire substrate interface for AlN growth
inferredcites →https://doi.org/10.1007/s12274-010-0013-9openalex-snapshot
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
inferredcites →https://doi.org/10.1016/0022-0248(90)90836-aopenalex-snapshot
Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1016/0022-0248(94)90448-0openalex-snapshot
Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.apsusc.2013.08.038openalex-snapshot
Effects of plasma treatment on evolution of surface step-terrace structure of critically cleaned c-plane sapphire substrates: An AFM study
inferredcites →https://doi.org/10.1016/j.jcrysgro.2003.10.051openalex-snapshot
Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2003.11.017openalex-snapshot
Effect of initial process conditions on the structural properties of AlN films
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.10.115openalex-snapshot
Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.05.056openalex-snapshot
A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.12.037openalex-snapshot
Wet KOH etching of freestanding AlN single crystals
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.07.083openalex-snapshot
Effect of the AIN nucleation layer growth on AlN material quality
inferredcites →https://doi.org/10.1016/j.jcrysgro.2012.12.141openalex-snapshot
Comparative study of etching high crystalline quality AlN and GaN
inferredcites →https://doi.org/10.1016/j.spmi.2004.09.003openalex-snapshot
Growth and characterisation of GaN with reduced dislocation density
inferredcites →https://doi.org/10.1016/j.susc.2008.02.009openalex-snapshot
High-temperature hydroxylation of alumina crystalline surfaces
inferredcites →https://doi.org/10.1016/j.susc.2009.07.004openalex-snapshot
Surface morphology and composition of c-, a- and m-sapphire surfaces in O2 and H2 environments
inferredcites →https://doi.org/10.1016/s0022-0248(01)02091-7openalex-snapshot
A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1016/s0921-5107(97)00169-4openalex-snapshot
Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire
inferredcites →https://doi.org/10.1021/nl049615aopenalex-snapshot
High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays
inferredcites →https://doi.org/10.1021/nl0707398openalex-snapshot
Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1021/nl400906ropenalex-snapshot
Coaxial InxGa1–xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes
inferredcites →https://doi.org/10.1038/nature04796openalex-snapshot
Ge/Si nanowire heterostructures as high-performance field-effect transistors
inferredcites →https://doi.org/10.1039/c3ce40755aopenalex-snapshot
In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition
inferredcites →https://doi.org/10.1063/1.117648openalex-snapshot
Inversion domains in GaN grown on sapphire
inferredcites →https://doi.org/10.1063/1.119408openalex-snapshot
GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
inferredcites →https://doi.org/10.1063/1.1402966openalex-snapshot
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
inferredcites →https://doi.org/10.1063/1.1616191openalex-snapshot
Inversion domains in AlN grown on (0001) sapphire
inferredcites →https://doi.org/10.1063/1.1646222openalex-snapshot
Effect of nitridation on polarity, microstructure, and morphology of AlN films
inferredcites →https://doi.org/10.1063/1.1763634openalex-snapshot
Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN
inferredcites →https://doi.org/10.1063/1.2204836openalex-snapshot
Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.2245436openalex-snapshot
Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates
inferredcites →https://doi.org/10.1063/1.2364460openalex-snapshot
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.2937445openalex-snapshot
Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.339792openalex-snapshot
Properties of high-purity AlxGa1−xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors
inferredcites →https://doi.org/10.1063/1.3524473openalex-snapshot
Polarity inversion of N-face GaN using an aluminum oxide interlayer
inferredcites →https://doi.org/10.1063/1.4798239openalex-snapshot
Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes
inferredcites →https://doi.org/10.1063/1.4804575openalex-snapshot
Polarity control and growth of lateral polarity structures in AlN
inferredcites →https://doi.org/10.1063/1.4812237openalex-snapshot
282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
inferredcites →https://doi.org/10.1088/0022-3727/31/20/001openalex-snapshot
Growth and applications of Group III-nitrides
inferredcites →https://doi.org/10.1088/0953-8984/13/32/317openalex-snapshot
Gallium nitride based transistors
inferredcites →https://doi.org/10.1103/physrevb.54.4432openalex-snapshot
Surface kinetics of zinc-blende (001) GaN
inferredcites →https://doi.org/10.1109/ted.2009.2033768openalex-snapshot
Deep-Ultraviolet Light-Emitting Diodes
inferredcites →https://doi.org/10.1143/apex.5.025501openalex-snapshot
Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
inferredcites →https://doi.org/10.1143/apex.5.082101openalex-snapshot
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
inferredcites →https://doi.org/10.1143/jjap.45.8639openalex-snapshot
High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4485856openalex-extracted
Simulation and Growth Study of Flux Rate Effects on Mnvpe Grown Aln
inferred← citeshttps://doi.org/10.1002/pssa.201900694openalex-snapshot
The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2023.127451openalex-snapshot
Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy
inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107843openalex-snapshot
Effect of flux rate on the growth of AlN films on sapphire by MNVPE
inferred← citeshttps://doi.org/10.1016/j.mssp.2026.111214openalex-snapshot
Optimization of TMAl preflow for low temperature grown AlN for AlGaN UVC LED heterostructure
inferred← citeshttps://doi.org/10.1016/j.spmi.2018.07.011openalex-snapshot
Epitaxial growth of AlN microwalls on wet etched GaN template by MOCVD
inferred← citeshttps://doi.org/10.1016/j.tsf.2019.01.049openalex-snapshot
Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition
inferred← citeshttps://doi.org/10.1021/acs.cgd.9b01543openalex-snapshot
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
inferred← citeshttps://doi.org/10.1038/s41598-017-19047-6openalex-snapshot
Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method
inferred← citeshttps://doi.org/10.1039/c7nr08079dopenalex-snapshot
Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes
inferred← citeshttps://doi.org/10.1039/c8ce01473fopenalex-snapshot
Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth
inferred← citeshttps://doi.org/10.1039/d2ce00652aopenalex-snapshot
Behaviours of the lattice-polarity inversion in AlN growth on c-Al 2 O 3 (0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition
inferred← citeshttps://doi.org/10.1063/5.0042631openalex-snapshot
Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method
inferred← citeshttps://doi.org/10.1063/5.0122697openalex-snapshot
Far-UVC emission of polarity-engineered AlGaN MQW using carbon nanotube-based cold cathode electron beam
inferred← citeshttps://doi.org/10.1186/s11671-015-1178-7openalex-snapshot
AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.3390/cryst12010038openalex-snapshot
Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate
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