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Interfacial Properties of Silicon Nitride Grown on Epitaxial Graphene on 6H-SiC Substrate

https://doi.org/10.1021/jp304054u
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adma.200904415openalex-snapshot
High‐Performance Top‐Gated Graphene‐Nanoribbon Transistors Using Zirconium Oxide Nanowires as High‐Dielectric‐Constant Gate Dielectrics
inferredcites →https://doi.org/10.1002/jcc.20495openalex-snapshot
Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction
inferredcites →https://doi.org/10.1016/j.commatsci.2005.04.010openalex-snapshot
A fast and robust algorithm for Bader decomposition of charge density
inferredcites →https://doi.org/10.1016/j.mseb.2006.08.017openalex-snapshot
Band offsets of high K gate oxides on high mobility semiconductors
inferredcites →https://doi.org/10.1016/j.susc.2003.08.005openalex-snapshot
Determination of effective electron inelastic mean free paths in SiO2 and Si3N4 using a Si reference
inferredcites →https://doi.org/10.1021/nl071254mopenalex-snapshot
Graphene Thickness Determination Using Reflection and Contrast Spectroscopy
inferredcites →https://doi.org/10.1021/nl100022uopenalex-snapshot
Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics
inferredcites →https://doi.org/10.1021/nl100840zopenalex-snapshot
Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics
inferredcites →https://doi.org/10.1021/nl101832yopenalex-snapshot
Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers
inferredcites →https://doi.org/10.1038/nature04233openalex-snapshot
Two-dimensional gas of massless Dirac fermions in graphene
inferredcites →https://doi.org/10.1038/nmat1849openalex-snapshot
The rise of graphene
inferredcites →https://doi.org/10.1038/nmat2003openalex-snapshot
Substrate-induced bandgap opening in epitaxial graphene
inferredcites →https://doi.org/10.1038/nnano.2010.283openalex-snapshot
Fast DNA sequencing with a graphene-based nanochannel device
inferredcites →https://doi.org/10.1038/nphys935openalex-snapshot
Charged-impurity scattering in graphene
inferredcites →https://doi.org/10.1063/1.2213928openalex-snapshot
Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation
inferredcites →https://doi.org/10.1063/1.2747214openalex-snapshot
Electronic structure of germanium nitride considered for gate dielectrics
inferredcites →https://doi.org/10.1063/1.2892036openalex-snapshot
X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source
inferredcites →https://doi.org/10.1063/1.3040324openalex-snapshot
Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study
inferredcites →https://doi.org/10.1063/1.3072625openalex-snapshot
Electronic structures of β-Si3N4(0001)/Si(111) interfaces: Perfect bonding and dangling bond effects
inferredcites →https://doi.org/10.1063/1.3327834openalex-snapshot
In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate
inferredcites →https://doi.org/10.1063/1.3623567openalex-snapshot
Graphene on β-Si3N4: An ideal system for graphene-based electronics
inferredcites →https://doi.org/10.1073/pnas.0914117107openalex-snapshot
High- κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors
inferredcites →https://doi.org/10.1103/physrevb.47.558openalex-snapshot
Ab initio molecular dynamics for liquid metals
inferredcites →https://doi.org/10.1103/physrevb.49.14251openalex-snapshot
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
inferredcites →https://doi.org/10.1103/physrevb.50.17953openalex-snapshot
Projector augmented-wave method
inferredcites →https://doi.org/10.1103/physrevb.60.r2146openalex-snapshot
Crystalline Si3N4 thin films on Si(111) and the 4×4 reconstruction on Si3N4(0001)
inferredcites →https://doi.org/10.1103/physrevlett.44.1620openalex-snapshot
Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
inferredcites →https://doi.org/10.1103/physrevlett.96.256602openalex-snapshot
Quantum Hall Ferromagnetism in Graphene
inferredcites →https://doi.org/10.1103/physrevlett.97.187401openalex-snapshot
Raman Spectrum of Graphene and Graphene Layers
inferredcites →https://doi.org/10.1103/revmodphys.81.109openalex-snapshot
The electronic properties of graphene
inferredcites →https://doi.org/10.1109/16.661229openalex-snapshot
Making silicon nitride film a viable gate dielectric
inferredcites →https://doi.org/10.1116/1.1768525openalex-snapshot
Experimental determination of valence band maxima for SrTiO3, TiO2, and SrO and the associated valence band offsets with Si(001)
inferredcites →https://doi.org/10.1126/science.1102896openalex-snapshot
Electric Field Effect in Atomically Thin Carbon Films

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4755878openalex-extracted
Tuning Interface Properties of 2d Metal Silicon Nitrides and Their Native High- Κ Dielectric Silicon Nitride
inferred← citeshttps://doi.org/10.1002/admi.201700035openalex-snapshot
Tuning Contact Barrier Height between Metals and MoS2 Monolayer through Interface Engineering
inferred← citeshttps://doi.org/10.1002/admi.201902175openalex-snapshot
Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si3N4(0001)/Si(111)
inferred← citeshttps://doi.org/10.1002/pssb.201600360openalex-snapshot
Impact of native defects and impurities in m−HfO2and β−Si3N4on charge trapping memory devices: A first principle hybrid functional study
inferred← citeshttps://doi.org/10.1002/sia.6377openalex-snapshot
Tuning thermal stability and electronic properties of germanium oxide on Ge(001) surface with the incorporation of nitrogen
inferred← citeshttps://doi.org/10.1007/s12274-014-0444-9openalex-snapshot
Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures
inferred← citeshttps://doi.org/10.1007/s12274-021-4025-4openalex-snapshot
Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors
inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.01.449openalex-snapshot
Fabrication and multifunctional applications of wood-derived Si3N4 ceramics with the morphology of whalebone
inferred← citeshttps://doi.org/10.1021/acs.jpcc.6b01576openalex-snapshot
Interfacial Interaction between HfO2 and MoS2: From Thin Films to Monolayer
inferred← citeshttps://doi.org/10.1038/s41598-020-61285-8openalex-snapshot
Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants
inferred← citeshttps://doi.org/10.1038/srep29221openalex-snapshot
The stability of aluminium oxide monolayer and its interface with two-dimensional materials
inferred← citeshttps://doi.org/10.1039/c5ra16621gopenalex-snapshot
Graphene stabilized high-κ dielectric Y 2 O 3 (111) monolayers and their interfacial properties
inferred← citeshttps://doi.org/10.1039/d4tc01938eopenalex-snapshot
Modulating interface performance between 2D semiconductor MoSi 2 N 4 and its native high- k dielectric Si 3 N 4
inferred← citeshttps://doi.org/10.1088/1361-6528/ac87b6openalex-snapshot
Operando photoelectron spectroscopy analysis of graphene field-effect transistors
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