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Tuning Interface Properties of 2d Metal Silicon Nitrides and Their Native High- Κ Dielectric Silicon Nitride

https://doi.org/10.2139/ssrn.4755878
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Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors
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Promises and prospects of two-dimensional transistors
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Transistors based on two-dimensional materials for future integrated circuits
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A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film
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Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors
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Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
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Improving carrier mobility in two-dimensional semiconductors with rippled materials
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Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
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Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
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Substrate mediated electronic and excitonic reconstruction in a MoS 2 monolayer
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Electronic structure of germanium nitride considered for gate dielectrics
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Two-dimensional van der Waals electrical contact to monolayer MoSi2N4
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Valley-dependent properties of monolayer MoSi 2 N 4 , WSi 2 N 4 , and MoSi 2 As 4
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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
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MoS 2 transistors with 1-nanometer gate lengths
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Chemical vapor deposition of layered two-dimensional MoSi 2 N 4 materials
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