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Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation
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High‐Detectivity Multilayer MoS 2 Phototransistors with Spectral Response from Ultraviolet to Infrared
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Semiconductor physics and devices
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MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
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High-Performance Single Layered WSe 2 p-FETs with Chemically Doped Contacts
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Integrated Circuits Based on Bilayer MoS 2 Transistors
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High Performance Multilayer MoS2 Transistors with Scandium Contacts
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Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
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Electroluminescence in Single Layer MoS2
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Control of Schottky Barriers in Single Layer MoS 2 Transistors with Ferromagnetic Contacts
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Hysteresis of Electronic Transport in Graphene Transistors
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Channel Length Scaling of MoS 2 MOSFETs
inferredcites →https://doi.org/10.1021/nn3059136openalex-snapshot
Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
inferredcites →https://doi.org/10.1038/nchem.1589openalex-snapshot
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
inferredcites →https://doi.org/10.1038/ncomms2018openalex-snapshot
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
inferredcites →https://doi.org/10.1038/ncomms2652openalex-snapshot
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
inferredcites →https://doi.org/10.1038/nmat3518openalex-snapshot
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
inferredcites →https://doi.org/10.1038/nnano.2012.193openalex-snapshot
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
inferredcites →https://doi.org/10.1038/nnano.2013.100openalex-snapshot
Ultrasensitive photodetectors based on monolayer MoS2
inferredcites →https://doi.org/10.1038/nphoton.2010.186openalex-snapshot
Graphene photonics and optoelectronics
inferredcites →https://doi.org/10.1088/0034-4885/74/8/082501openalex-snapshot
New directions in science and technology: two-dimensional crystals
inferredcites →https://doi.org/10.1109/led.2012.2202630openalex-snapshot
$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming
inferredcites →https://doi.org/10.1126/science.1220527openalex-snapshot
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
inferredcites →https://doi.org/10.1364/oe.21.004908openalex-snapshot
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Substrate effects on the speed limiting factor of WSe 2 photodetectors
inferred← citeshttps://doi.org/10.1039/d4nr04610bopenalex-snapshot
Impacts of localized charge accumulation on photocurrent dynamics in metal−MoS 2 contacts
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Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL
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Light induced double ‘on’ state anti-ambipolar behavior and self-driven photoswitching in p-WSe 2 /n-SnS 2 heterostructures
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Current rectification and asymmetric photoresponse in MoS 2 stacking-induced homojunctions *
inferred← citeshttps://doi.org/10.1088/2053-1583/ad8938openalex-snapshot
Electrically reconfigurable MoO3/InSe van der Waals heterojunctions
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Transfer matrix approach to electron transport in monolayer MoS2/MoO x heterostructures
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Floquet spectrum and two-terminal conductance of a transition-metal dichalcogenide ribbon under a circularly polarized laser field
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Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration
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Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field-Effect Transistor
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Improvement of Metal-Semiconductor Contact from Schottky to Ohmic by Cu Doping in Transition Metal Dichalcogenide Transistors
inferred← citeshttps://doi.org/10.1116/1.4961384openalex-snapshot
Nanoimprint-assisted shear exfoliation plus transfer printing for producing transition metal dichalcogenide heterostructures
inferred← citeshttps://doi.org/10.1116/5.0215419openalex-snapshot
Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping
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Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness
inferred← citeshttps://doi.org/10.1142/s0217984917500798openalex-snapshot
Numerical simulation on n-MoS2/p-Si heterojunction solar cells
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Gate-tunable optoelectronic properties of a nano-layered GaSe photodetector
inferred← citeshttps://doi.org/10.2139/ssrn.5372190openalex-snapshot
Semi-Empirical Pseudopotential Method for Monolayer Transitional-Metal Dichalcogenides
inferred← citeshttps://doi.org/10.3389/fmech.2017.00015openalex-snapshot
First-Principles Calculations of Thermoelectric Properties of IV–VI Chalcogenides 2D Materials
inferred← citeshttps://doi.org/10.3390/membranes11120931openalex-snapshot
Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation
inferred← citeshttps://doi.org/10.3390/nano13091491openalex-snapshot
Fast-Response Micro-Phototransistor Based on MoS2/Organic Molecule Heterojunction
inferred← citeshttps://doi.org/10.3390/nano13182559openalex-snapshot
Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor
inferred← citeshttps://doi.org/10.3390/nano14211751openalex-snapshot
Tuning the Electronic Bandgap of Penta-Graphene from Insulator to Metal Through Functionalization: A First-Principles Calculation
inferred← citeshttps://doi.org/10.3390/s19112551openalex-snapshot
Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications
inferred← citeshttps://doi.org/10.3788/lpb.2026.s1001openalex-snapshot
Contact engineering for 2D materials through ion implantation and flash lamp annealing
inferred← citeshttps://doi.org/10.61882/jmrph.8.2.1openalex-snapshot
Design of optical biosensor based on two-dimensional dichalcogenide material WS2
inferred← citeshttps://doi.org/10.7567/jjap.57.04fe10openalex-snapshot
Controlled resistive switching characteristics of ZrO 2 -based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
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