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Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

https://doi.org/10.1038/srep17372
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.200461486openalex-snapshot
Dislocation density reduction in GaN using porous SiN interlayers
inferredcites →https://doi.org/10.1002/pssc.200674875openalex-snapshot
Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures
inferredcites →https://doi.org/10.1016/j.jcrysgro.2012.10.033openalex-snapshot
Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer
inferredcites →https://doi.org/10.1016/j.tsf.2005.07.241openalex-snapshot
Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1016/s0022-0248(00)00709-0openalex-snapshot
A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE
inferredcites →https://doi.org/10.1038/srep05514openalex-snapshot
Multi-color broadband visible light source via GaN hexagonal annular structure
inferredcites →https://doi.org/10.1063/1.1622441openalex-snapshot
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
inferredcites →https://doi.org/10.1063/1.2180532openalex-snapshot
Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers
inferredcites →https://doi.org/10.1063/1.2217259openalex-snapshot
Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
inferredcites →https://doi.org/10.1063/1.2433754openalex-snapshot
Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork
inferredcites →https://doi.org/10.1063/1.2800797openalex-snapshot
White light-emitting diodes based on a single InGaN emission layer
inferredcites →https://doi.org/10.1063/1.2956404openalex-snapshot
Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells
inferredcites →https://doi.org/10.1063/1.3049607openalex-snapshot
In Ga N ∕ Ga N multiple quantum wells grown on microfacets for white-light generation
inferredcites →https://doi.org/10.1063/1.4863208openalex-snapshot
Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission
inferredcites →https://doi.org/10.1063/1.4869336openalex-snapshot
Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography
inferredcites →https://doi.org/10.1088/0022-3727/43/35/354007openalex-snapshot
Recent results on the degradation of white LEDs for lighting
inferredcites →https://doi.org/10.1088/0268-1242/17/5/307openalex-snapshot
Growth and properties of InGaN/GaN quantum wells and blue light emitting diodes by metal organic chemical vapour deposition
inferredcites →https://doi.org/10.1088/0957-4484/22/31/315706openalex-snapshot
White emission by self-regulated growth of InGaN/GaN quantum wells onin situself-organized faceted n-GaN islands
inferredcites →https://doi.org/10.1088/0957-4484/24/43/435702openalex-snapshot
Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
inferredcites →https://doi.org/10.1143/jjap.40.l918openalex-snapshot
Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells
inferredcites →https://doi.org/10.1143/jjap.41.l246openalex-snapshot
Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well
inferredcites →https://doi.org/10.1143/jjap.45.2463openalex-snapshot
Emission Mechanism of Mixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes
inferredcites →https://doi.org/10.7567/apex.6.102103openalex-snapshot
Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4831443openalex-extracted
Optical Characterization of Gan-Based Led Devices Through Spectroscopic Ellipsometry
inferred← citeshttps://doi.org/10.1002/pssr.201700042openalex-snapshot
Growth mechanism of InGaN nanodots on three‐dimensional GaN structures
inferred← citeshttps://doi.org/10.1007/s40042-023-00888-6openalex-snapshot
Synthesis and characterization of ZnGa2O4:Cr3+Ge3+ compounds with tunable photoluminescence properties
inferred← citeshttps://doi.org/10.1016/j.cap.2018.08.019openalex-snapshot
Mechanistic investigations on emission characteristics from g-C3N4, g-C3N4@Pt and g-C3N4@Ag nanostructures using X-ray absorption spectroscopy
inferred← citeshttps://doi.org/10.1016/j.jallcom.2022.163712openalex-snapshot
Direct van deer Waals epitaxy of multiband-emitting InGaN-based LEDs on graphene for phosphor-free white light illumination
inferred← citeshttps://doi.org/10.1016/j.mser.2020.100578openalex-snapshot
Recent progress in group III-nitride nanostructures: From materials to applications
inferred← citeshttps://doi.org/10.1016/j.optlastec.2025.112560openalex-snapshot
Optical characterization of GaN-based LED devices through spectroscopic ellipsometry
inferred← citeshttps://doi.org/10.1016/j.optmat.2017.06.025openalex-snapshot
Efficient broad color luminescence from InGaN/GaN single quantum-well nanocolumn crystals on Si (111) substrate
inferred← citeshttps://doi.org/10.1021/acs.chemrev.7b00284openalex-snapshot
Down-Conversion Nitride Materials for Solid State Lighting: Recent Advances and Perspectives
inferred← citeshttps://doi.org/10.1038/s41598-017-07808-2openalex-snapshot
Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra
inferred← citeshttps://doi.org/10.1038/s41598-018-37575-7openalex-snapshot
Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN
inferred← citeshttps://doi.org/10.1038/srep35217openalex-snapshot
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
inferred← citeshttps://doi.org/10.1038/srep44148openalex-snapshot
Colour-crafted phosphor-free white light emitters via in-situ nanostructure engineering
inferred← citeshttps://doi.org/10.1088/1742-6596/1378/2/022023openalex-snapshot
Brief review on cathodoluminescence application in solid-state devices
inferred← citeshttps://doi.org/10.1088/1742-6596/1378/2/022038openalex-snapshot
Brief review on the physics of solid-state lighting device
inferred← citeshttps://doi.org/10.1109/jphot.2019.2913869openalex-snapshot
Phosphor-Free Three-Dimensional Hybrid White LED With High Color-Rendering Index
inferred← citeshttps://doi.org/10.3390/photonics8020042openalex-snapshot
The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes
inferred← citeshttps://doi.org/10.35848/1347-4065/ac671bopenalex-snapshot
Multi-colour GaN-based LEDs with trench structure
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