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Optical Characterization of Gan-Based Led Devices Through Spectroscopic Ellipsometry

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/1521-3951(200111)228:2<437::aid-pssb437>3.0.co;2-eopenalex-extracted

Infrared Ellipsometry - a Novel Tool for Characterization of Group-III Nitride Heterostructures for Optoelectronic Device Applications

inferredcites →https://doi.org/10.1016/j.tsf.2010.11.075openalex-extracted

Dual rotating compensator ellipsometry: Theory and simulations

inferredcites →https://doi.org/10.1021/nl203860bopenalex-extracted

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

inferredcites →https://doi.org/10.1038/srep17372openalex-extracted

Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

inferredcites →https://doi.org/10.1039/c7nr08079dopenalex-extracted

Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes

inferredcites →https://doi.org/10.1063/1.368954openalex-extracted

Refractive index of InGaN/GaN quantum well

inferredcites →https://doi.org/10.1063/1.4973995openalex-extracted

GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency

inferredcites →https://doi.org/10.1088/1361-6463/ab77e2openalex-extracted

Characterization of optical properties and thermo-optic effect for non-polar AlGaN thin films using spectroscopic ellipsometry

inferredcites →https://doi.org/10.1143/jjap.34.l797openalex-extracted

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

inferredcites →https://doi.org/10.1143/jjap.37.l1105openalex-extracted

Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry

inferredcites →https://doi.org/10.1364/josaa.16.001997openalex-extracted

Dual rotating-compensator multichannel ellipsometer: instrument design for real-time Mueller matrix spectroscopy of surfaces and films

inferredcites →https://doi.org/10.1364/oe.19.002886openalex-extracted

Effect of current spreading on the efficiency droop of InGaN light-emitting diodes

inferredcites →https://doi.org/10.1364/oe.22.000463openalex-extracted

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer

inferredcites →https://doi.org/10.1364/oe.25.006440openalex-extracted

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation

inferredcites →https://doi.org/10.1364/oe.27.00a669openalex-extracted

Highly efficient GaN-based high-power flip-chip light-emitting diodes

inferredcites →https://doi.org/10.35848/1347-4065/abc29fopenalex-extracted

Analysis of the optical constants and bandgap energy in Al 1- x In x N alloys grown on a c -plane freestanding GaN substrate by using spectroscopic ellipsometry

inferredcites →https://doi.org/10.7567/jjap.53.06je14openalex-extracted

Improved internal quantum efficiency of GaN-based light emitting diodes using p-AlGaN trench in multi-quantum well

inferredcites →https://doi.org/10.7567/jjap.57.062101openalex-extracted

Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer

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inferred← citeshttps://doi.org/10.1016/j.comptc.2025.115299openalex-snapshot

Investigation on halogen atom doping in GaS monolayer and shear strain modulation based on first-principles calculations

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