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Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Quantitative estimation of density of Bi-induced localized states in GaAs1−xBix grown by molecular beam epitaxy

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Bi flux-dependent MBE growth of GaSbBi alloys

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Bismuth alloying properties in GaAs nanowires

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Photoluminescence of GaAsBi/GaAs quantum dots grown by metalorganic vapor phase epitaxy

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Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy

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Alloy states in dilute GaAs1−xNx alloys (x<1%)

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Molecular beam epitaxy growth of GaAs1−xBix

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Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs 1− x Bi x films

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Structural and electronic properties of III-V bismuth compounds

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Bi isoelectronic impurities in GaAs

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Formation and vanishing of short range ordering in GaAs1−xBix thin films

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Phase transition in ultrathin Bi films

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What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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