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The Effects of Growth Interruptions in the Gaasbi Capping Growth on Inas/Gaas Quantum Dots: The Emergence of Three-Phase Nanoparticles
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Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssb.201800365openalex-extracted
HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure
inferredcites →https://doi.org/10.1002/pssb.202270004openalex-extracted
GaAsBi: From Molecular Beam Epitaxy Growth to Devices
inferredcites →https://doi.org/10.1007/978-981-13-8078-5_2openalex-extracted
Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi
inferredcites →https://doi.org/10.1007/s11082-014-0019-8openalex-extracted
Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures
inferredcites →https://doi.org/10.1016/j.jallcom.2015.12.233openalex-extracted
Thermodynamic calculations and characterization of the Bi–Ga–In ternary alloys
inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.10.040openalex-extracted
Kinetically limited growth of GaAsBi by molecular-beam epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2018.04.026openalex-extracted
Spontaneous nanostructure formation in GaAsBi alloys
inferredcites →https://doi.org/10.1016/j.jcrysgro.2019.125216openalex-extracted
Strain stabilization of far from equilibrium GaAsBi films
inferredcites →https://doi.org/10.1016/j.jcrysgro.2020.125815openalex-extracted
The effect of III:V ratio on compositional and microstructural properties of GaAs1-xBix (0 0 1)
inferredcites →https://doi.org/10.1016/j.jlumin.2017.06.030openalex-extracted
Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure
inferredcites →https://doi.org/10.1016/j.physe.2005.12.018openalex-extracted
1.5μm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substrates
inferredcites →https://doi.org/10.1016/j.solmat.2015.07.015openalex-extracted
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
inferredcites →https://doi.org/10.1016/j.solmat.2016.09.006openalex-extracted
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
inferredcites →https://doi.org/10.1016/j.ultramic.2014.12.006openalex-extracted
Automated CBED processing: Sample thickness estimation based on analysis of zone-axis CBED pattern
inferredcites →https://doi.org/10.1021/nn5072254openalex-extracted
Gallium Plasmonics: Deep Subwavelength Spectroscopic Imaging of Single and Interacting Gallium Nanoparticles
inferredcites →https://doi.org/10.1038/lsa.2016.80openalex-extracted
Metallic nanostructures for efficient LED lighting
inferredcites →https://doi.org/10.1038/nmat2629openalex-extracted
Plasmonics for improved photovoltaic devices
inferredcites →https://doi.org/10.1038/s41524-018-0091-xopenalex-extracted
Evaluation of thermodynamic equations of state across chemistry and structure in the materials project
inferredcites →https://doi.org/10.1038/srep28860openalex-extracted
Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
inferredcites →https://doi.org/10.1039/c9cc02820jopenalex-extracted
From a volatile molecular precursor to twin-free single crystals of bismuth
inferredcites →https://doi.org/10.1049/el:20030753openalex-extracted
High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range
inferredcites →https://doi.org/10.1063/1.1375842openalex-extracted
Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.1421428openalex-extracted
High-performance InAs quantum-dot lasers near 1.3 μm
inferredcites →https://doi.org/10.1063/1.1565499openalex-extracted
Molecular beam epitaxy growth of GaAs1−xBix
inferredcites →https://doi.org/10.1063/1.1699435openalex-extracted
Formation of Crystal Nuclei in Liquid Metals
inferredcites →https://doi.org/10.1063/1.2221395openalex-extracted
Extreme undercooling (down to 90K) of liquid metal nanoparticles
inferredcites →https://doi.org/10.1063/1.4748172openalex-extracted
Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.4789369openalex-extracted
Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi
inferredcites →https://doi.org/10.1063/1.4812323openalex-extracted
Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
inferredcites →https://doi.org/10.1063/1.4851036openalex-extracted
Variation of lattice constant and cluster formation in GaAsBi
inferredcites →https://doi.org/10.1063/1.4898702openalex-extracted
Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.4990946openalex-extracted
Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence
inferredcites →https://doi.org/10.1063/5.0010193openalex-extracted
Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview
inferredcites →https://doi.org/10.1073/pnas.2209630119openalex-extracted
Melting temperature prediction using a graph neural network model: From ancient minerals to new materials
inferredcites →https://doi.org/10.1088/0268-1242/31/6/065007openalex-extracted
Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures
inferredcites →https://doi.org/10.1088/0957-4484/25/20/205605openalex-extracted
Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi
inferredcites →https://doi.org/10.1088/0957-4484/27/12/125703openalex-extracted
General route for the decomposition of InAs quantum dots during the capping process
inferredcites →https://doi.org/10.1088/0957-4484/27/32/325603openalex-extracted
Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs 1− x Bi x /GaAs quantum wells
inferredcites →https://doi.org/10.1088/1361-6528/aa83e2openalex-extracted
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
inferredcites →https://doi.org/10.1088/1361-6528/aa9e34openalex-extracted
Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates
inferredcites →https://doi.org/10.1088/1361-6528/aacd20openalex-extracted
Ga metal nanoparticle-GaAs quantum molecule complexes for terahertz generation
inferredcites →https://doi.org/10.1107/s1600576715017252openalex-extracted
Crystallographic Tool Box(CrysTBox): automated tools for transmission electron microscopists and crystallographers
inferredcites →https://doi.org/10.1116/1.4916575openalex-extracted
Increased bismuth concentration in MBE GaAs1−xBix films by oscillating III/V flux ratio during growth
inferredcites →https://doi.org/10.1143/jjap.48.091103openalex-extracted
Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots
inferredcites →https://doi.org/10.1364/ome.7.004249openalex-extracted
Influence of Bi on morphology and optical properties of InAs QDs
inferredcites →https://doi.org/10.3390/nano12071058openalex-extracted
Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers
inferredcites →https://doi.org/10.3390/nano14040375openalex-extracted
Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots
inferredcites →https://doi.org/10.7567/apex.6.112601openalex-extracted
Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy
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