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Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/j.diamond.2009.09.003openalex-snapshot
Analysis of passivated diamond surface channel FET in dual-gate configuration — Localizing the surface acceptor
inferredcites →https://doi.org/10.1016/s0167-5729(97)80002-7openalex-snapshot
Hydrogen-terminated diamond surfaces and interfaces
inferredcites →https://doi.org/10.1038/nature02751openalex-snapshot
Surface transfer doping of diamond
inferredcites →https://doi.org/10.1038/nature04278openalex-snapshot
Origin of the metallic properties of heavily boron-doped superconducting diamond
inferredcites →https://doi.org/10.1063/1.1429756openalex-snapshot
Hydrogen-induced transport properties of holes in diamond surface layers
inferredcites →https://doi.org/10.1063/1.4769404openalex-snapshot
Refractory two-dimensional hole gas on hydrogenated diamond surface
inferredcites →https://doi.org/10.1063/1.4772985openalex-snapshot
Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
inferredcites →https://doi.org/10.1063/1.4825071openalex-snapshot
Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates
inferredcites →https://doi.org/10.1063/1.4865929openalex-snapshot
Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy
inferredcites →https://doi.org/10.1063/1.4867652openalex-snapshot
Manipulating the negative fixed charge density at the c-Si/Al2O3 interface
inferredcites →https://doi.org/10.1103/physrevb.68.085110openalex-snapshot
First-principles calculations of intrinsic defects in Al2O3
inferredcites →https://doi.org/10.1109/jproc.2002.1021567openalex-snapshot
AlGaN/GaN HEMTs-an overview of device operation and applications
inferredcites →https://doi.org/10.1109/led.2009.2023540openalex-snapshot
1580-V–40-$\hbox{m}\Omega\cdot \hbox{cm}^{2}$ Double-RESURF MOSFETs on 4H-SiC$(\hbox{000}\bar{\hbox{1}})$
inferredcites →https://doi.org/10.1109/led.2010.2052587openalex-snapshot
High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology
inferredcites →https://doi.org/10.1109/led.2013.2271377openalex-snapshot
High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions
inferredcites →https://doi.org/10.1109/led.2013.2294969openalex-snapshot
600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$
inferredcites →https://doi.org/10.1109/led.2014.2356191openalex-snapshot
Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV
inferredcites →https://doi.org/10.1109/ted.2012.2233742openalex-snapshot
AlGaN Channel HEMT With Extremely High Breakdown Voltage
inferredcites →https://doi.org/10.1126/science.1074374openalex-snapshot
High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
inferredcites →https://doi.org/10.1126/science.1148841openalex-snapshot
Charge Transfer Equilibria Between Diamond and an Aqueous Oxygen Electrochemical Redox Couple
inferredcites →https://doi.org/10.1143/apex.5.025701openalex-snapshot
Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
inferredcites →https://doi.org/10.1143/jjap.51.090111openalex-snapshot
High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation
inferredcites →https://doi.org/10.1143/jjap.51.090112openalex-snapshot
Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al 2 O 3 Passivation Layer
inferredcites →https://doi.org/10.1143/jjap.51.090114openalex-snapshot
Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4683559openalex-extracted
Dft Study of Structural and Electronic Properties of Diamond (100) Surface as a Function of Surface Coverage of Atmospheric Functional Groups
inferred← citeshttps://doi.org/10.1002/9781119460749.ch8openalex-snapshot
THz Plasma Field Effect Transistor Detectors
inferred← citeshttps://doi.org/10.1002/adfm.202420238openalex-snapshot
Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep‐Ultraviolet Photodetector with Low‐Voltage Operation
inferred← citeshttps://doi.org/10.1002/aelm.202201122openalex-snapshot
High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond
inferred← citeshttps://doi.org/10.1002/apxr.202500039openalex-snapshot
Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review
inferred← citeshttps://doi.org/10.1002/jnm.2800openalex-snapshot
Microwave diamond devices technology: Field‐effect transistors and modeling
inferred← citeshttps://doi.org/10.1002/pssa.201900538openalex-snapshot
Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas
inferred← citeshttps://doi.org/10.1002/pssr.201700401openalex-snapshot
Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond
inferred← citeshttps://doi.org/10.1007/978-94-024-2018-0_12openalex-snapshot
CVD Diamond and Nanodiamond: Versatile Materials for Countering a Wide Range of CBRN Threats
inferred← citeshttps://doi.org/10.1007/s12613-019-1843-4openalex-snapshot
Recent progress in diamond-based MOSFETs
inferred← citeshttps://doi.org/10.1016/b978-0-08-102183-5.00004-2openalex-snapshot
Key technologies for device fabrications and materials characterizations
inferred← citeshttps://doi.org/10.1016/b978-0-08-102183-5.00005-4openalex-snapshot
Device formation and the characterizations
inferred← citeshttps://doi.org/10.1016/b978-0-08-102183-5.00006-6openalex-snapshot
Circuits and applications
inferred← citeshttps://doi.org/10.1016/b978-0-12-815468-7.00002-0openalex-snapshot
Semiconductor diamond
inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.153340openalex-snapshot
Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.160429openalex-snapshot
Microscopic evidence of carbide formation at the interface of tungsten-based ohmic contacts on diamond
inferred← citeshttps://doi.org/10.1016/j.carbon.2020.07.019openalex-snapshot
Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method
inferred← citeshttps://doi.org/10.1016/j.carbon.2020.11.072openalex-snapshot
Inversion channel MOSFET on heteroepitaxially grown free-standing diamond
inferred← citeshttps://doi.org/10.1016/j.carbon.2021.01.014openalex-snapshot
(111) vertical-type two-dimensional hole gas diamond MOSFETs with hexagonal trench structures
inferred← citeshttps://doi.org/10.1016/j.carbon.2025.120024openalex-snapshot
Fabrication of inversion channel diamond MOSFET with atomically step-free Al2O3/diamond interface
inferred← citeshttps://doi.org/10.1016/j.carbon.2026.122099openalex-snapshot
Selective etching of atomically flat diamond (111) surfaces using H2+N2 plasma etching
inferred← citeshttps://doi.org/10.1016/j.cartre.2025.100580openalex-snapshot
Structural and electronic properties of H- and O-functionalized diamond (100) with variable coverage
inferred← citeshttps://doi.org/10.1016/j.diamond.2017.08.003openalex-snapshot
Design of a normally-off diamond JFET for high power integrated applications
inferred← citeshttps://doi.org/10.1016/j.diamond.2017.10.004openalex-snapshot
Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation
inferred← citeshttps://doi.org/10.1016/j.diamond.2018.03.005openalex-snapshot
The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond
inferred← citeshttps://doi.org/10.1016/j.diamond.2020.108154openalex-snapshot
Diamond semiconductor performances in power electronics applications
inferred← citeshttps://doi.org/10.1016/j.diamond.2020.108185openalex-snapshot
High temperature operation of a monolithic bidirectional diamond switch
inferred← citeshttps://doi.org/10.1016/j.diamond.2021.108597openalex-snapshot
A monolithic, back-gated diamond field-effect transistor for tunable color centers
inferred← citeshttps://doi.org/10.1016/j.diamond.2022.108848openalex-snapshot
Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3
inferred← citeshttps://doi.org/10.1016/j.diamond.2023.109825openalex-snapshot
Irradiation effects of X-rays up to 3 MGy on hydrogen-terminated diamond MOSFETs
inferred← citeshttps://doi.org/10.1016/j.diamond.2024.111012openalex-snapshot
Exploring diamond multigate FET for next generation three-phase CCD
inferred← citeshttps://doi.org/10.1016/j.diamond.2024.111208openalex-snapshot
The synergistic effect of vertical structural parameters of vertical-type two-dimensional hole gas diamond MOSFETs on improving the overall performance of devices based on TCAD simulation
inferred← citeshttps://doi.org/10.1016/j.diamond.2025.112022openalex-snapshot
Depletion-mode and enhancement-mode diamond MOSFETs fabricated on the same heteroepitaxial diamond substrates
inferred← citeshttps://doi.org/10.1016/j.diamond.2025.113258openalex-snapshot
Normally-off Al/HfO2/Al-gated diamond field effect transistor on a heteroepitaxial diamond substrate
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.113510openalex-snapshot
Interfacial charge and thermal transport in diamond field-effect transistors with c-BN and Al2O3 gate dielectrics
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.113551openalex-snapshot
Hydrogen-terminated diamond 2DHG: Formation mechanisms, interface engineering, and device applications—A review
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.114140openalex-snapshot
Heteroepitaxial growth of twin-free (111) diamond on misoriented r-plane sapphire substrate with controlled misorientation direction
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.114202openalex-snapshot
A novel double-drift trench MOSFET on H-terminated diamond with optimized static and dynamic performance
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.114213openalex-snapshot
Theoretical analysis of orientation-dependent electron transport in c-BN/diamond heterojunctions
inferred← citeshttps://doi.org/10.1016/j.jallcom.2017.11.094openalex-snapshot
Giant lateral photovoltaic effect in MoS2/SiO2/Si p-i-n junction
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.172713openalex-snapshot
Surface Two-Dimensional Hole Gas in Si Doped Β-Ga2o3 Thin Film
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2022.127010openalex-snapshot
Estimation of hole mobility in hydrogen-terminated diamond MOSFET with high-k stacked gate dielectrics
inferred← citeshttps://doi.org/10.1016/j.mssp.2018.01.007openalex-snapshot
Recent advances in diamond power semiconductor devices
inferred← citeshttps://doi.org/10.1016/j.rinp.2020.103760openalex-snapshot
Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer
inferred← citeshttps://doi.org/10.1021/acsaelm.1c00571openalex-snapshot
Demonstration of Monolithic Polycrystalline Diamond-GaN Complementary FET Technology for High-Temperature Applications
inferred← citeshttps://doi.org/10.1021/acsaelm.6c00194openalex-snapshot
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
inferred← citeshttps://doi.org/10.1021/acsami.1c08761openalex-snapshot
Seed Dibbling Method for the Growth of High-Quality Diamond on GaN
inferred← citeshttps://doi.org/10.1021/jacsau.4c00006openalex-snapshot
Sluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and Silicon Interface
inferred← citeshttps://doi.org/10.1038/s41598-018-25193-2openalex-snapshot
Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour
inferred← citeshttps://doi.org/10.1038/s41598-018-28837-5openalex-snapshot
Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
inferred← citeshttps://doi.org/10.1038/s41598-022-05180-4openalex-snapshot
An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices
inferred← citeshttps://doi.org/10.1038/s41928-021-00689-4openalex-snapshot
High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
inferred← citeshttps://doi.org/10.1038/s43246-025-00955-4openalex-snapshot
Advancing N-type doping in semiconductors through hydrogen-defect interactions
inferred← citeshttps://doi.org/10.1039/d0tc02063jopenalex-snapshot
Atomic layer deposition of high- κ layers on polycrystalline diamond for MOS devices: a review
inferred← citeshttps://doi.org/10.1063/1.5053091openalex-snapshot
p-Diamond as candidate for plasmonic terahertz and far infrared applications
inferred← citeshttps://doi.org/10.1063/1.5055812openalex-snapshot
High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
inferred← citeshttps://doi.org/10.1063/1.5099395openalex-snapshot
Electrical property measurement of two-dimensional hole-gas layer on hydrogen-terminated diamond surface in vacuum-gap-gate structure
inferred← citeshttps://doi.org/10.1063/5.0001868openalex-snapshot
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
inferred← citeshttps://doi.org/10.1063/5.0020620openalex-snapshot
Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures
inferred← citeshttps://doi.org/10.1063/5.0021785openalex-snapshot
Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method
inferred← citeshttps://doi.org/10.1063/5.0040645openalex-snapshot
Radiation hardened H-diamond MOSFET (RADDFET) operating after 1 MGy irradiation
inferred← citeshttps://doi.org/10.1063/5.0044004openalex-snapshot
H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric
inferred← citeshttps://doi.org/10.1063/5.0090715openalex-snapshot
Orientation dependent etching of polycrystalline diamond by hydrogen plasma
inferred← citeshttps://doi.org/10.1063/5.0103037openalex-snapshot
High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
inferred← citeshttps://doi.org/10.1063/5.0104016openalex-snapshot
Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond
inferred← citeshttps://doi.org/10.1063/5.0172567openalex-snapshot
Precision sub-monolayer manipulation of diamond surface chemistry using laser direct write oxidation in air
inferred← citeshttps://doi.org/10.1063/5.0188372openalex-snapshot
Impact of water vapor annealing treatments on Al2O3/diamond interface
inferred← citeshttps://doi.org/10.1063/5.0259636openalex-snapshot
High carrier mobility of diamond (100) enabled by surface modification using doped hexagonal boron nitride
inferred← citeshttps://doi.org/10.1063/5.0267276openalex-snapshot
Band alignment of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) on non-hydrogenated and H-terminated (100) diamond
inferred← citeshttps://doi.org/10.1063/5.0278883openalex-snapshot
The renaissance of lateral power devices for high voltage applications
inferred← citeshttps://doi.org/10.1063/5.0290094openalex-snapshot
Fast power switching with cascode diamond MOSFET–SiC MOSFET/GaN HEMT complementary half-bridge inverter
inferred← citeshttps://doi.org/10.1063/5.0326366openalex-snapshot
Conductivity conversion of N-doped diamond by additional B ion implantation
inferred← citeshttps://doi.org/10.1080/26941112.2024.2410160openalex-snapshot
Applications of diamond films: a review
inferred← citeshttps://doi.org/10.1080/26941112.2026.2738292openalex-snapshot
Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation
inferred← citeshttps://doi.org/10.1088/1361-6463/ab4eabopenalex-snapshot
Diamond power devices: state of the art, modelling, figures of merit and future perspective
inferred← citeshttps://doi.org/10.1088/1361-6463/aca61copenalex-snapshot
Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits
inferred← citeshttps://doi.org/10.1093/oxfmat/itac004openalex-snapshot
A review of ultrawide bandgap materials: properties, synthesis and devices
inferred← citeshttps://doi.org/10.1098/rsta.2023.0382openalex-snapshot
Diamond thin films: a twenty-first century material. Part 2: a new hope
inferred← citeshttps://doi.org/10.1109/iedm50572.2025.11353808openalex-snapshot
Demonstration of Complementary Power Circuit With Normally-Off Diamond P-FET and GaN N-FET
inferred← citeshttps://doi.org/10.1109/led.2017.2685081openalex-snapshot
High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al2O3Passivation Layer
inferred← citeshttps://doi.org/10.1109/led.2018.2886596openalex-snapshot
3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
inferred← citeshttps://doi.org/10.1109/led.2019.2912211openalex-snapshot
Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation
inferred← citeshttps://doi.org/10.1109/led.2019.2953245openalex-snapshot
H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon
inferred← citeshttps://doi.org/10.1109/led.2019.2953693openalex-snapshot
Over 12000 A/cm 2 and 3.2 m$\Omega$ cm 2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
inferred← citeshttps://doi.org/10.1109/led.2020.2972330openalex-snapshot
An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material
inferred← citeshttps://doi.org/10.1109/led.2020.3047522openalex-snapshot
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts
inferred← citeshttps://doi.org/10.1109/led.2021.3131038openalex-snapshot
580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P − -Drift Layer
inferred← citeshttps://doi.org/10.1109/led.2022.3156149openalex-snapshot
n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C
inferred← citeshttps://doi.org/10.1109/led.2024.3427423openalex-snapshot
Over 1 A Operation of Vertical-Type Diamond MOSFETs
inferred← citeshttps://doi.org/10.1109/nano47656.2020.9183658openalex-snapshot
Characterization and Analysis of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Different Surface Charge Models with Device Simulation
inferred← citeshttps://doi.org/10.1109/nmdc50713.2021.9677505openalex-snapshot
Effect of Surface Charge Model in the Characterization of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Device Simulation
inferred← citeshttps://doi.org/10.1109/ted.2018.2847340openalex-snapshot
Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors
inferred← citeshttps://doi.org/10.1109/ted.2020.3010471openalex-snapshot
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
inferred← citeshttps://doi.org/10.1109/ted.2021.3083568openalex-snapshot
Low ON-Resistance (2.5 mΩ · cm 2 ) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure
inferred← citeshttps://doi.org/10.1109/ted.2021.3086457openalex-snapshot
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3
inferred← citeshttps://doi.org/10.1109/ted.2021.3086458openalex-snapshot
A Study of Linearity of C-H Diamond FETs forS-Band Power Application
inferred← citeshttps://doi.org/10.1109/ted.2021.3100017openalex-snapshot
Transfer Doping in Diamond for Channel Doping and Electrical Contacts
inferred← citeshttps://doi.org/10.1109/ted.2021.3130016openalex-snapshot
Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal–Oxide–Semiconductor Field-Effect Transistors
inferred← citeshttps://doi.org/10.1109/ted.2022.3157655openalex-snapshot
−10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p + -Diamond-First and Silicon Molecular Beam Deposition Approaches
inferred← citeshttps://doi.org/10.1109/ted.2022.3165735openalex-snapshot
WO3 Passivation of Access Regions in Diamond MOSFETs
inferred← citeshttps://doi.org/10.1109/ted.2022.3175940openalex-snapshot
Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si-Terminated (C–Si–O) Diamond Capacitors
inferred← citeshttps://doi.org/10.1109/ted.2022.3186865openalex-snapshot
Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al2O3 Gate Insulator With Drain Current Density Over 300 mA/mm
inferred← citeshttps://doi.org/10.1109/ted.2024.3514813openalex-snapshot
Investigation of X-Ray Irradiance Hardness and High Temperature Operation of H-Terminated Diamond MOSFET
inferred← citeshttps://doi.org/10.1109/ted.2026.3674881openalex-snapshot
Realization of 2T0C-DRAM Cells Utilizing Hydrogen-Terminated Diamond MOSFETs
inferred← citeshttps://doi.org/10.1116/6.0003272openalex-snapshot
Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors
inferred← citeshttps://doi.org/10.1149/2162-8777/ae3345openalex-snapshot
Effect of Schottky Metal Contacts on Barrier Heights of Vertical p-type Diamond Rectifiers, with an ITO/Diamond Heterojunction Benchmark
inferred← citeshttps://doi.org/10.1186/s11671-017-2334-zopenalex-snapshot
Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction
inferred← citeshttps://doi.org/10.1557/s43578-021-00317-zopenalex-snapshot
Inversion-type p-channel diamond MOSFET issues
inferred← citeshttps://doi.org/10.1557/s43578-021-00458-1openalex-snapshot
Ultrawide-bandgap semiconductors: An overview
inferred← citeshttps://doi.org/10.3390/ma17143437openalex-snapshot
A Review of Diamond Materials and Applications in Power Semiconductor Devices
inferred← citeshttps://doi.org/10.3390/ma19163529openalex-snapshot
Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors
inferred← citeshttps://doi.org/10.3390/mi11040433openalex-snapshot
Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides
inferred← citeshttps://doi.org/10.3390/nano12234125openalex-snapshot
High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
inferred← citeshttps://doi.org/10.35848/1347-4065/ab70a7openalex-snapshot
Temperature dependence of diamond MOSFET transport properties
inferred← citeshttps://doi.org/10.35848/1882-0786/ae5bddopenalex-snapshot
Monolithic bidirectional 2DHG diamond switch
inferred← citeshttps://doi.org/10.48550/arxiv.2102.05982openalex-snapshot
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
inferred← citeshttps://doi.org/10.70675/4ed01b10z3e72z4ca3zb62bza6e4314d9226openalex-snapshot
Diamond transistor for power electronics : material and process technology development
inferred← citeshttps://doi.org/10.70675/78ec911czd767z4ca1z9049z01b0ab87a0bcopenalex-snapshot
Dispositifs de puissance en diamant à base de contact Schottky : réglage des propriétés interfaciales pour démontrer les performances ultimes du diamant
inferred← citeshttps://doi.org/10.7567/1347-4065/ab1b5copenalex-snapshot
Conductive-probe atomic force microscopy and Kelvin-probe force microscopy characterization of OH-terminated diamond (111) surfaces with step-terrace structures
inferred← citeshttps://doi.org/10.7567/jjap.57.04fr01openalex-snapshot
Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer
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