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High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1007/bf02666175openalex-snapshot
Thermal expansion, molar volume and specific heat of diamond from 0 to 3000k
inferredcites →https://doi.org/10.1007/s003390100999openalex-snapshot
Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10?297.5�K temperature range
inferredcites →https://doi.org/10.1016/j.diamond.2016.03.013openalex-snapshot
Single crystal diamond wafers for high power electronics
inferredcites →https://doi.org/10.1016/s0038-1101(99)00090-8openalex-snapshot
Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond
inferredcites →https://doi.org/10.1016/s0925-9635(01)00406-xopenalex-snapshot
Potential applications of surface channel diamond field-effect transistors
inferredcites →https://doi.org/10.1016/s0925-9635(01)00644-6openalex-snapshot
RF performance of surface channel diamond FETs with sub-micron gate length
inferredcites →https://doi.org/10.1016/s1369-7021(07)70349-8openalex-snapshot
Diamond as an electronic material
inferredcites →https://doi.org/10.1021/nl5006542openalex-snapshot
Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
inferredcites →https://doi.org/10.1021/nn301675fopenalex-snapshot
Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
inferredcites →https://doi.org/10.1021/nn506645qopenalex-snapshot
Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride
inferredcites →https://doi.org/10.1038/nature12186openalex-snapshot
Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices
inferredcites →https://doi.org/10.1038/nature26160openalex-snapshot
Unconventional superconductivity in magic-angle graphene superlattices
inferredcites →https://doi.org/10.1038/ncomms3541openalex-snapshot
Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride
inferredcites →https://doi.org/10.1038/nmat3386openalex-snapshot
Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
inferredcites →https://doi.org/10.1038/nnano.2010.172openalex-snapshot
Boron nitride substrates for high-quality graphene electronics
inferredcites →https://doi.org/10.1038/nphys2272openalex-snapshot
Emergence of superlattice Dirac points in graphene on hexagonal boron nitride
inferredcites →https://doi.org/10.1038/srep06395openalex-snapshot
Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric
inferredcites →https://doi.org/10.1038/srep31585openalex-snapshot
Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics
inferredcites →https://doi.org/10.1038/srep34757openalex-snapshot
Design and fabrication of high-performance diamond triple-gate field-effect transistors
inferredcites →https://doi.org/10.1038/srep42368openalex-snapshot
Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications
inferredcites →https://doi.org/10.1063/1.4820143openalex-snapshot
Normally-off HfO2-gated diamond field effect transistors
inferredcites →https://doi.org/10.1063/1.4884828openalex-snapshot
C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation
inferredcites →https://doi.org/10.1063/1.4891039openalex-snapshot
High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance
inferredcites →https://doi.org/10.1063/1.4939650openalex-snapshot
Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond
inferredcites →https://doi.org/10.1063/1.4962851openalex-snapshot
High- k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors
inferredcites →https://doi.org/10.1063/1.4983091openalex-snapshot
Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
inferredcites →https://doi.org/10.1063/1.4996114openalex-snapshot
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance
inferredcites →https://doi.org/10.1063/1.5027198openalex-snapshot
Influence of surface crystal-orientation on transfer doping of V2O5/H-terminated diamond
inferredcites →https://doi.org/10.1103/physrevb.13.4607openalex-snapshot
Heat capacity and thermal conductivity of hexagonal pyrolytic boron nitride
inferredcites →https://doi.org/10.1103/physrevb.73.085313openalex-snapshot
Structure, electronics, and interaction of hydrogen and oxygen on diamond surfaces
inferredcites →https://doi.org/10.1103/physrevb.89.235304openalex-snapshot
Quantum oscillations of the two-dimensional hole gas at atomically flat diamond surfaces
inferredcites →https://doi.org/10.1103/physrevb.89.235423openalex-snapshot
Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon
inferredcites →https://doi.org/10.1103/physrevlett.85.3472openalex-snapshot
Origin of Surface Conductivity in Diamond
inferredcites →https://doi.org/10.1109/16.337449openalex-snapshot
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
inferredcites →https://doi.org/10.1109/iedm.2007.4419088openalex-snapshot
High-performance p-channel diamond MOSFETs with alumina gate insulator
inferredcites →https://doi.org/10.1109/jproc.2002.1021567openalex-snapshot
AlGaN/GaN HEMTs-an overview of device operation and applications
inferredcites →https://doi.org/10.1109/led.2017.2661340openalex-snapshot
Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage
inferredcites →https://doi.org/10.1109/led.2017.2695495openalex-snapshot
Diamond Field Effect Transistors With MoO3Gate Dielectric
inferredcites →https://doi.org/10.1109/led.2017.2755718openalex-snapshot
Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor
inferredcites →https://doi.org/10.1126/sciadv.aaq0194openalex-snapshot
Observation of the quantum valley Hall state in ballistic graphene superlattices
inferredcites →https://doi.org/10.1126/science.1074374openalex-snapshot
High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
inferredcites →https://doi.org/10.1134/s1064226914030061openalex-snapshot
FET on hydrogenated diamond surface
inferredcites →https://doi.org/10.1143/apex.3.044001openalex-snapshot
High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
inferredcites →https://doi.org/10.1143/jjap.38.2640openalex-snapshot
Highly Improved Electrical Properties of Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Prepared by Ultrahigh Vacuum Process
inferredcites →https://doi.org/10.1143/jjap.39.l908openalex-snapshot
Cu/CaF2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process
inferredcites →https://doi.org/10.1143/jjap.45.7565openalex-snapshot
Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
inferredcites →https://doi.org/10.1143/jjap.51.090111openalex-snapshot
High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation
inferredcites →https://doi.org/10.1143/jjap.51.090112openalex-snapshot
Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al 2 O 3 Passivation Layer
inferredcites →https://doi.org/10.7566/jpsj.82.074718openalex-snapshot
Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces
inferredcites →https://doi.org/10.7567/jjap.56.01aa01openalex-snapshot
Diamond field-effect transistors for RF power electronics: Novel NO 2 hole doping and low-temperature deposited Al 2 O 3 passivation
inferredcites →https://doi.org/10.7567/jjap.56.100301openalex-snapshot
Characterization and mobility analysis of MoO 3 -gated diamond MOSFET
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4683559openalex-extracted
Dft Study of Structural and Electronic Properties of Diamond (100) Surface as a Function of Surface Coverage of Atmospheric Functional Groups
inferred← citeshttps://doi.org/10.1002/adfm.202408536openalex-snapshot
Electronic Band Offset in a Diamond|cBN|Diamond System for Modulation Doping
inferred← citeshttps://doi.org/10.1002/adma.202101589openalex-snapshot
Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride
inferred← citeshttps://doi.org/10.1002/adma.73678openalex-snapshot
High Throughput X‐Ray Characterization of Defects in Wide‐Bandgap Semiconductors
inferred← citeshttps://doi.org/10.1002/adma.74216openalex-snapshot
Controlled Synthesis and Interfacial Bonding of Hexagonal Diamond/Wurtzite Boron Nitride Covalent Heterostructures
inferred← citeshttps://doi.org/10.1002/jnm.2800openalex-snapshot
Microwave diamond devices technology: Field‐effect transistors and modeling
inferred← citeshttps://doi.org/10.1002/pssb.70229openalex-snapshot
Suppression of the Field Crowding Effect Using White Graphene, High‐ k and Low‐ k Dielectric Stack in p‐Type h‐BN Planar Schottky Barrier Diode
inferred← citeshttps://doi.org/10.1002/pssr.202200397openalex-snapshot
Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling
inferred← citeshttps://doi.org/10.1007/s40820-024-01635-7openalex-snapshot
Physics of 2D Materials for Developing Smart Devices
inferred← citeshttps://doi.org/10.1016/b978-0-443-18843-5.00003-3openalex-snapshot
Hexagonal boron nitride for microelectronics, nanoelectronics, and nanophotonics
inferred← citeshttps://doi.org/10.1016/b978-0-443-18843-5.00019-7openalex-snapshot
Electronic, electrical, and optical properties of hexagonal boron nitride
inferred← citeshttps://doi.org/10.1016/j.apsusc.2020.146795openalex-snapshot
Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films
inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.156245openalex-snapshot
Twist angle modulated electronic properties and band alignments of hydrogen-terminated diamond (1 1 1)/hexagonal boron nitride heterostructures
inferred← citeshttps://doi.org/10.1016/j.carbon.2020.11.057openalex-snapshot
Oxidative etching mechanism of the diamond (100) surface
inferred← citeshttps://doi.org/10.1016/j.carbon.2021.11.034openalex-snapshot
Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain
inferred← citeshttps://doi.org/10.1016/j.carbon.2024.119366openalex-snapshot
Benchmarking Diamond Surface Preparation and Fluorination Via Inductively Coupled Plasma-Reactive Ion Etching
inferred← citeshttps://doi.org/10.1016/j.carbon.2024.119404openalex-snapshot
Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers
inferred← citeshttps://doi.org/10.1016/j.commatsci.2021.110859openalex-snapshot
A reactive molecular dynamics study of the hydrogenation of diamond surfaces
inferred← citeshttps://doi.org/10.1016/j.diamond.2021.108518openalex-snapshot
Hydrogen and deuterium termination of diamond for low surface resistance and surface step control
inferred← citeshttps://doi.org/10.1016/j.diamond.2021.108538openalex-snapshot
Microwave power performance analysis of hydrogen terminated diamond MOSFET
inferred← citeshttps://doi.org/10.1016/j.diamond.2022.109225openalex-snapshot
The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junction
inferred← citeshttps://doi.org/10.1016/j.diamond.2023.109712openalex-snapshot
Surface transfer doping of oxidised silicon-terminated (111) diamond using MoO3
inferred← citeshttps://doi.org/10.1016/j.diamond.2023.110745openalex-snapshot
Gate leakage suppression of normally-OFF diamond FET by employing MOS-MES hybrid gate structure
inferred← citeshttps://doi.org/10.1016/j.diamond.2024.111007openalex-snapshot
Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications
inferred← citeshttps://doi.org/10.1016/j.diamond.2025.112504openalex-snapshot
Low-leakage-current and improved thermal stability of normally-OFF hydrogen-terminated diamond FET via boron nitride passivation
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.113551openalex-snapshot
Hydrogen-terminated diamond 2DHG: Formation mechanisms, interface engineering, and device applications—A review
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.113711openalex-snapshot
Electron-beam induced modulation of surface conduction in hydrogen-terminated diamond
inferred← citeshttps://doi.org/10.1016/j.eml.2022.101931openalex-snapshot
Extreme mechanics of nanoscale diamond towards functional device applications
inferred← citeshttps://doi.org/10.1016/j.est.2025.116961openalex-snapshot
Theoretical study of the tritium-absorbing h-BN/diamond heterojunction betavoltaic battery
inferred← citeshttps://doi.org/10.1016/j.jallcom.2020.154542openalex-snapshot
Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108516openalex-snapshot
The heterointerface characterization of BaF2 or MgF2 on the hydrogenated diamond by X-ray photoelectron spectroscopy
inferred← citeshttps://doi.org/10.1016/j.progsurf.2021.100613openalex-snapshot
Surface transfer doping of diamond: A review
inferred← citeshttps://doi.org/10.1016/j.tsf.2021.139026openalex-snapshot
Characterization of deep interface states in SiO2/B-doped diamond using the transient photocapacitance method
inferred← citeshttps://doi.org/10.1021/acs.chemmater.2c02371openalex-snapshot
Point Defect Stability and Dielectric Properties of Graphene-Like Monolayer Materials
inferred← citeshttps://doi.org/10.1021/acs.chemmater.5c00248openalex-snapshot
Diamond: Recent Progress in Synthesis and Its Potential in Electronics
inferred← citeshttps://doi.org/10.1021/acs.jpcc.4c00253openalex-snapshot
Operando XPS for Plasma Process Monitoring: A Case Study on the Hydrogenation of Copper Oxide Confined under h-BN
inferred← citeshttps://doi.org/10.1021/acs.jpclett.0c00874openalex-snapshot
Exotic Two-Dimensional Structure: The First Case of Hexagonal NaCl
inferred← citeshttps://doi.org/10.1021/acs.langmuir.4c02310openalex-snapshot
Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study
inferred← citeshttps://doi.org/10.1021/acsaelm.1c00571openalex-snapshot
Demonstration of Monolithic Polycrystalline Diamond-GaN Complementary FET Technology for High-Temperature Applications
inferred← citeshttps://doi.org/10.1021/acsaelm.6c00194openalex-snapshot
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
inferred← citeshttps://doi.org/10.1021/acsami.0c11883openalex-snapshot
Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate
inferred← citeshttps://doi.org/10.1021/acsami.0c18719openalex-snapshot
Dual Role of Adsorbent and Non-monotonic Transfer p-Doping of Diamond
inferred← citeshttps://doi.org/10.1021/jacs.3c01766openalex-snapshot
RETRACTED: Two-Dimensional Violet Phosphorus P11: A Large Band Gap Phosphorus Allotrope
inferred← citeshttps://doi.org/10.1038/s41598-024-60190-8openalex-snapshot
Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain
inferred← citeshttps://doi.org/10.1038/s41928-021-00689-4openalex-snapshot
High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
inferred← citeshttps://doi.org/10.1038/s41928-021-00707-5openalex-snapshot
Diamond electronics with high carrier mobilities
inferred← citeshttps://doi.org/10.1039/d1ra05831bopenalex-snapshot
Mechanical and electronic properties of boron nitride nanosheets with graphene domains under strain
inferred← citeshttps://doi.org/10.1039/d3tc00498hopenalex-snapshot
The interface microstructure and band alignment of hexagonal boron nitride/diamond heterojunctions
inferred← citeshttps://doi.org/10.1063/1.5099395openalex-snapshot
Electrical property measurement of two-dimensional hole-gas layer on hydrogen-terminated diamond surface in vacuum-gap-gate structure
inferred← citeshttps://doi.org/10.1063/1.5126359openalex-snapshot
High temperature (300 °C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs
inferred← citeshttps://doi.org/10.1063/5.0001868openalex-snapshot
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
inferred← citeshttps://doi.org/10.1063/5.0002768openalex-snapshot
2D hole gas mobility at diamond/insulator interface
inferred← citeshttps://doi.org/10.1063/5.0020620openalex-snapshot
Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures
inferred← citeshttps://doi.org/10.1063/5.0055121openalex-snapshot
Surface etching during epitaxial h-BN growth on graphene
inferred← citeshttps://doi.org/10.1063/5.0075964openalex-snapshot
Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body
inferred← citeshttps://doi.org/10.1063/5.0077530openalex-snapshot
Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric
inferred← citeshttps://doi.org/10.1063/5.0083383openalex-snapshot
Excess noise in high-current diamond diodes
inferred← citeshttps://doi.org/10.1063/5.0083971openalex-snapshot
Surface transfer doping of MoO3 on hydrogen terminated diamond with an Al2O3 interfacial layer
inferred← citeshttps://doi.org/10.1063/5.0103037openalex-snapshot
High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
inferred← citeshttps://doi.org/10.1063/5.0117263openalex-snapshot
Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate
inferred← citeshttps://doi.org/10.1063/5.0165596openalex-snapshot
High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method
inferred← citeshttps://doi.org/10.1063/5.0224192openalex-snapshot
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
inferred← citeshttps://doi.org/10.1063/5.0245506openalex-snapshot
Enhancement to the conductivity of surface transfer-doped (111) diamond through thermochemical surface etching
inferred← citeshttps://doi.org/10.1063/5.0259636openalex-snapshot
High carrier mobility of diamond (100) enabled by surface modification using doped hexagonal boron nitride
inferred← citeshttps://doi.org/10.1063/5.0268185openalex-snapshot
Strain engineering of microfabricated diamond and its applications
inferred← citeshttps://doi.org/10.1063/5.0272041openalex-snapshot
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
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Progress in semiconductor diamond photodetectors and MEMS sensors
inferred← citeshttps://doi.org/10.1088/1361-6463/ab4eabopenalex-snapshot
Diamond power devices: state of the art, modelling, figures of merit and future perspective
inferred← citeshttps://doi.org/10.1088/1361-6463/abe8feopenalex-snapshot
Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors
inferred← citeshttps://doi.org/10.1088/1361-6528/acfaa8openalex-snapshot
The role of oxygen incorporation in Ni (111) substrates on the growth of hexagonal boron nitride monolayers
inferred← citeshttps://doi.org/10.1088/1361-6528/ad501copenalex-snapshot
Graphite/h-BN van der Waals heterostructure as a gate stack for HgTe quantum wells
inferred← citeshttps://doi.org/10.1088/1402-4896/ad406dopenalex-snapshot
Efficient doping of functionalized graphene and h-BN by molecular adsorption
inferred← citeshttps://doi.org/10.1088/2515-7639/abf1abopenalex-snapshot
Turn of the decade: versatility of 2D hexagonal boron nitride
inferred← citeshttps://doi.org/10.1088/2515-7639/ad218bopenalex-snapshot
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
inferred← citeshttps://doi.org/10.1093/oxfmat/itac004openalex-snapshot
A review of ultrawide bandgap materials: properties, synthesis and devices
inferred← citeshttps://doi.org/10.1103/physrevmaterials.3.121601openalex-snapshot
Quantum oscillations in diamond field-effect transistors with a h -BN gate dielectric
inferred← citeshttps://doi.org/10.1103/physrevmaterials.7.094602openalex-snapshot
Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition
inferred← citeshttps://doi.org/10.1109/itherm55376.2025.11235678openalex-snapshot
Thermal Conductivity Measurements of CVD-grown h-BN Films
inferred← citeshttps://doi.org/10.1109/led.2019.2953693openalex-snapshot
Over 12000 A/cm 2 and 3.2 m$\Omega$ cm 2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
inferred← citeshttps://doi.org/10.1109/led.2021.3131038openalex-snapshot
580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P − -Drift Layer
inferred← citeshttps://doi.org/10.1109/led.2022.3181444openalex-snapshot
3326-V Modulation-Doped Diamond MOSFETs
inferred← citeshttps://doi.org/10.1109/led.2025.3600447openalex-snapshot
High-On/Off-Current-Ratio AlGaN/GaN HEMTs via Van Der Waals Epitaxy GaN With a BN Inset Layer
inferred← citeshttps://doi.org/10.1109/ted.2021.3086458openalex-snapshot
A Study of Linearity of C-H Diamond FETs forS-Band Power Application
inferred← citeshttps://doi.org/10.1109/ted.2021.3105622openalex-snapshot
1.26 W/mm Output Power Density at 10 GHz for Si3N4Passivated H-Terminated Diamond MOSFETs
inferred← citeshttps://doi.org/10.1109/ted.2021.3117237openalex-snapshot
Normally-OFF Diamond Reverse Blocking MESFET
inferred← citeshttps://doi.org/10.1109/ted.2022.3165735openalex-snapshot
WO3 Passivation of Access Regions in Diamond MOSFETs
inferred← citeshttps://doi.org/10.1109/ted.2022.3204518openalex-snapshot
Single Crystalline Diamond p-Channel Cascode and Inverter
inferred← citeshttps://doi.org/10.1116/6.0004337openalex-snapshot
Plasma-free hydrogenation of oxygen-terminated polycrystalline diamond as determined by circular transmission line measurements (CTLM)
inferred← citeshttps://doi.org/10.3390/nano14050460openalex-snapshot
Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics
inferred← citeshttps://doi.org/10.7498/aps.71.20220995openalex-snapshot
Synthesis of h-BN/diamond heterojunctions and its electrical characteristics
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