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TiS 3 sheet based van der Waals heterostructures with a tunable Schottky barrier
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Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adfm.201605647openalex-snapshot
High Current Density Electrical Breakdown of TiS3 Nanoribbon‐Based Field‐Effect Transistors
inferredcites →https://doi.org/10.1002/adma.201405632openalex-snapshot
TiS3 Transistors with Tailored Morphology and Electrical Properties
inferredcites →https://doi.org/10.1002/adom.201400043openalex-snapshot
Ultrahigh Photoresponse of Few‐Layer TiS 3 Nanoribbon Transistors
inferredcites →https://doi.org/10.1002/anie.201502107openalex-snapshot
Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct‐Gap Semiconductor with High and Anisotropic Carrier Mobility
inferredcites →https://doi.org/10.1002/wcms.1243openalex-snapshot
Group IVB transition metal trichalcogenides: a new class of 2D layered materials beyond graphene
inferredcites →https://doi.org/10.1021/acs.chemmater.5b04899openalex-snapshot
Monolayer Phosphorene–Metal Contacts
inferredcites →https://doi.org/10.1021/acs.jpcc.5b02634openalex-snapshot
Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
inferredcites →https://doi.org/10.1021/jacs.6b10834openalex-snapshot
Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes
inferredcites →https://doi.org/10.1021/nl202131qopenalex-snapshot
Electrostatic Doping of Graphene through Ultrathin Hexagonal Boron Nitride Films
inferredcites →https://doi.org/10.1021/nl304777eopenalex-snapshot
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
inferredcites →https://doi.org/10.1021/nl400044mopenalex-snapshot
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
inferredcites →https://doi.org/10.1021/nn501226zopenalex-snapshot
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
inferredcites →https://doi.org/10.1038/nature04233openalex-snapshot
Two-dimensional gas of massless Dirac fermions in graphene
inferredcites →https://doi.org/10.1038/ncomms5775openalex-snapshot
Efficient photoelectrochemical hydrogen production from bismuth vanadate-decorated tungsten trioxide helix nanostructures
inferredcites →https://doi.org/10.1038/nmat4452openalex-snapshot
Electrical contacts to two-dimensional semiconductors
inferredcites →https://doi.org/10.1038/nnano.2014.35openalex-snapshot
Black phosphorus field-effect transistors
inferredcites →https://doi.org/10.1039/c3cp52589aopenalex-snapshot
A theoretical model for metal–graphene contact resistance using a DFT–NEGF method
inferredcites →https://doi.org/10.1039/c4nr03670kopenalex-snapshot
Nanoelectronic circuits based on two-dimensional atomic layer crystals
inferredcites →https://doi.org/10.1039/c5nr04505copenalex-snapshot
Tuning the electronic properties of transition-metal trichalcogenides via tensile strain
inferredcites →https://doi.org/10.1039/c6cp01125jopenalex-snapshot
Robust band gap of TiS 3 nanofilms
inferredcites →https://doi.org/10.1039/c6nr07937gopenalex-snapshot
General criterion to distinguish between Schottky and Ohmic contacts at the metal/two-dimensional semiconductor interface
inferredcites →https://doi.org/10.1063/1.1564060openalex-snapshot
Hybrid functionals based on a screened Coulomb potential
inferredcites →https://doi.org/10.1063/1.333084openalex-snapshot
Lattice match: An application to heteroepitaxy
inferredcites →https://doi.org/10.1063/1.4852615openalex-snapshot
Doping mechanisms in graphene-MoS2 hybrids
inferredcites →https://doi.org/10.1063/1.4858400openalex-snapshot
The physics and chemistry of the Schottky barrier height
inferredcites →https://doi.org/10.1063/1.4935602openalex-snapshot
Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures
inferredcites →https://doi.org/10.1088/0953-8984/24/42/424216openalex-snapshot
Improved description of soft layered materials with van der Waals density functional theory
inferredcites →https://doi.org/10.1088/2053-1583/1/2/025001openalex-snapshot
Isolation and characterization of few-layer black phosphorus
inferredcites →https://doi.org/10.1088/2053-1583/aa6ca6openalex-snapshot
Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides
inferredcites →https://doi.org/10.1088/2053-1583/aa7ac3openalex-snapshot
2D halide perovskite-based van der Waals heterostructures: contact evaluation and performance modulation
inferredcites →https://doi.org/10.1103/physrevb.50.17953openalex-snapshot
Projector augmented-wave method
inferredcites →https://doi.org/10.1103/physrevb.54.11169openalex-snapshot
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
inferredcites →https://doi.org/10.1103/physrevb.59.1758openalex-snapshot
From ultrasoft pseudopotentials to the projector augmented-wave method
inferredcites →https://doi.org/10.1103/physrevb.79.195425openalex-snapshot
First-principles study of the interaction and charge transfer between graphene and metals
inferredcites →https://doi.org/10.1103/physrevb.88.085318openalex-snapshot
Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles
inferredcites →https://doi.org/10.1103/physrevb.90.125441openalex-snapshot
Electrical contacts to monolayer black phosphorus: A first-principles investigation
inferredcites →https://doi.org/10.1103/physrevlett.100.016602openalex-snapshot
Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
inferredcites →https://doi.org/10.1103/physrevlett.114.066803openalex-snapshot
van der Waals Heterostructure of Phosphorene and Graphene: Tuning the Schottky Barrier and Doping by Electrostatic Gating
inferredcites →https://doi.org/10.1103/physrevlett.78.1396openalex-snapshot
Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
inferredcites →https://doi.org/10.1109/ted.2002.808552openalex-snapshot
Scaling of strained-si n-MOSFETs into the ballistic regime and associated anisotropic effects
inferredcites →https://doi.org/10.1126/sciadv.1600069openalex-snapshot
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
inferredcites →https://doi.org/10.1126/science.1102896openalex-snapshot
Electric Field Effect in Atomically Thin Carbon Films
inferredcites →https://doi.org/10.1126/science.1158877openalex-snapshot
Graphene: Status and Prospects
inferredcites →https://doi.org/10.1126/science.aac9439openalex-snapshot
2D materials and van der Waals heterostructures
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Intrinsic Ohmic Contacts and Polarity-Tunable Schottky Barriers in M8x12-Graphene (M=Mo, W; X=S, Se) Vdw Heterostructures for High-Performance and Bipolar Device Applications
inferred← citeshttps://doi.org/10.1002/pssb.202400164openalex-snapshot
Intrinsic Ohmic Contacts and Polarity‐Tunable Schottky Barriers in M8X12–Graphene (M = Mo, W; X = S, Se) van der Waals Heterostructures for High‐Performance and Bipolar Device Applications
inferred← citeshttps://doi.org/10.1002/pssr.202000555openalex-snapshot
Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 van der Waals Heterostructures
inferred← citeshttps://doi.org/10.1007/s00604-019-4097-yopenalex-snapshot
A graphene/TiS3 heterojunction for resistive sensing of polar vapors at room temperature
inferred← citeshttps://doi.org/10.1007/s10853-023-08273-1openalex-snapshot
Comprehensive study on electronic structures of SiGe/Ga$$_{2}$$SeTe vdW heterobilayer
inferred← citeshttps://doi.org/10.1016/j.commatsci.2024.113488openalex-snapshot
Mechanistic insights into the electrical properties of Ti3C2T2/WS2 (T = F, O, OH) interfaces tuned by functional groups
inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109416openalex-snapshot
Tunable contact types of VSe2/BC6N van der Waals heterostructures via vertical strain and electric field
inferred← citeshttps://doi.org/10.1016/j.mtphys.2022.100749openalex-snapshot
Revealing the weak Fermi level pinning effect of 2D semiconductor/2D metal contact: A case of monolayer In2Ge2Te6 and its Janus structure In2Ge2Te3Se3
inferred← citeshttps://doi.org/10.1016/j.physb.2026.419125openalex-snapshot
Tunable contact properties and tunneling probability in NbSe2/Sc2CCl2 van der Waals heterostructures via strain and electric field
inferred← citeshttps://doi.org/10.1016/j.physe.2019.02.027openalex-snapshot
Tuning the n-type contact of graphene on Janus MoSSe monolayer by strain and electric field
inferred← citeshttps://doi.org/10.1016/j.physe.2025.116454openalex-snapshot
Effect of electric field, strain, and their synergistic interaction on Schottky barrier tuning and electronic structures in 2D TaSe2/SeMoSiP2 heterostructures
inferred← citeshttps://doi.org/10.1016/j.physleta.2020.126747openalex-snapshot
The dependence of interfacial properties on the layer number in 1T′/2H-MoS2 van der Waals heterostructures
inferred← citeshttps://doi.org/10.1016/j.surfin.2022.101823openalex-snapshot
Interface transition from Ohmic to Schottky contact in Ti3X2/MoS2 (X= B, C, N): Insights from first-principles
inferred← citeshttps://doi.org/10.1016/j.surfin.2025.106524openalex-snapshot
Electronic transport and interface properties of FeOCl-type monolayer SnNCl for flexible nanodevices
inferred← citeshttps://doi.org/10.1016/j.surfin.2025.107095openalex-snapshot
Tunable Schottky barrier and contact types in TaX 2 -M 2 CO 2 (X = S, Se, Te; M = Ti, Hf, Zr) van der Waals Heterostructure
inferred← citeshttps://doi.org/10.1021/acs.jpcc.1c03286openalex-snapshot
Tuning Schottky Barrier and Contact Type of Metal–Semiconductor in Ti 3 C 2 T 2 /MoS 2 (T = F, O, OH) by Strain: A First-Principles Study
inferred← citeshttps://doi.org/10.1021/acs.jpcc.3c03123openalex-snapshot
Bridging Borophene and Metal Surfaces: Structural, Electronic, and Electron Transport Properties
inferred← citeshttps://doi.org/10.1021/acs.jpcc.5c07502openalex-snapshot
Thickness-Dependent Electronic and Transport Properties of PtSe 2 on Au(111)
inferred← citeshttps://doi.org/10.1021/acs.jpcc.8b08946openalex-snapshot
Theoretical Study on the Interfacial Properties of Monolayer TiS3–Metal Contacts for Electronic Device Applications
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00438openalex-snapshot
Performance of the Pentagonal PdSe 2 Sheet as a Channel Material in Contact with Metal Surfaces and Graphene
inferred← citeshttps://doi.org/10.1021/acsami.2c12332openalex-snapshot
High-Responsivity Multiband and Polarization-Sensitive Photodetector Based on the TiS3/MoS2 Heterojunction
inferred← citeshttps://doi.org/10.1021/acsami.8b06078openalex-snapshot
Electrical Rectifying and Photosensing Property of Schottky Diode Based on MoS 2
inferred← citeshttps://doi.org/10.1021/acsomega.4c08817openalex-snapshot
First-Principles Study of the Ga2O3/Metal Interface by Inserting a Boron Nitride Monolayer
inferred← citeshttps://doi.org/10.1039/c8cp04337jopenalex-snapshot
Tunable interlayer coupling and Schottky barrier in graphene and Janus MoSSe heterostructures by applying an external field
inferred← citeshttps://doi.org/10.1039/c8cp06257aopenalex-snapshot
Functionalized MXenes as ideal electrodes for Janus MoSSe
inferred← citeshttps://doi.org/10.1039/d0tc01405bopenalex-snapshot
Interface and polarization effects induced Schottky-barrier-free contacts in two-dimensional MXene/GaN heterojunctions
inferred← citeshttps://doi.org/10.1039/d3cp06189bopenalex-snapshot
Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability
inferred← citeshttps://doi.org/10.1039/d6lf00138fopenalex-snapshot
First-principles investigation of VSe 2 /MSi 2 N 4 (M = Mo, W, Hf, Cr, Zr) heterostructures: efficient modulation from Schottky to Ohmic contact via strain engineering
inferred← citeshttps://doi.org/10.1088/1361-6463/ab1ca2openalex-snapshot
Computational screening of MX ( M = Ga, Ge, Sn, In; X = As, Se) van der Waals heterostructures as suitable candidates for solar cells
inferred← citeshttps://doi.org/10.1088/1361-6463/ab1f5aopenalex-snapshot
Tunable Schottky barrier in van der Waals heterostructures of graphene and hydrogenated phosphorus carbide monolayer: first-principles calculations
inferred← citeshttps://doi.org/10.1088/2053-1583/ac8c9fopenalex-snapshot
P-type ohmic contacts of MBenes with MoS 2 for nanodevices and logic circuits
inferred← citeshttps://doi.org/10.1088/2053-1591/ab509copenalex-snapshot
The high-speed channel made of metal for interfacial charge transfer in Z-scheme g–C3N4/MoS2 water-splitting photocatalyst
inferred← citeshttps://doi.org/10.1103/k4sz-qkh6openalex-snapshot
Symmetry-resolved electronic band structure of quasi-one-dimensional HfSe 3 ( 001 )
inferred← citeshttps://doi.org/10.1103/physrevb.106.125311openalex-snapshot
Interlayer excitonic insulator in two-dimensional double-layer semiconductor junctions: An explicitly solvable model
inferred← citeshttps://doi.org/10.1103/physrevb.98.075419openalex-snapshot
Ab initio and semiempirical modeling of excitons and trions in monolayer TiS3
inferred← citeshttps://doi.org/10.1103/physrevmaterials.8.014003openalex-snapshot
Modulating the electronic structure and interface contact of WSe2/CrSe2 van der Waals heterostructures by strain engineering: Insights from first-principles calculations
inferred← citeshttps://doi.org/10.1557/s43578-022-00744-6openalex-snapshot
What happens when transition metal trichalcogenides are interfaced with gold?
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