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Investigation of hydride vapor phase epitaxial growth of AlN on sputtered AlN buffer layers

https://doi.org/10.1039/c8ce02192a
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Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssb.201700506openalex-snapshot
Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing
inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.12.018openalex-snapshot
Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.11.086openalex-snapshot
Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer
inferredcites →https://doi.org/10.1016/j.spmi.2017.03.013openalex-snapshot
High-quality AlN epitaxy on sapphire substrates with sputtered buffer layers
inferredcites →https://doi.org/10.1038/nature04760openalex-snapshot
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
inferredcites →https://doi.org/10.1038/nnano.2014.308openalex-snapshot
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
inferredcites →https://doi.org/10.1038/srep35934openalex-snapshot
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
inferredcites →https://doi.org/10.1038/srep42747openalex-snapshot
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.4983708openalex-snapshot
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
inferredcites →https://doi.org/10.1063/1.5008258openalex-snapshot
High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy
inferredcites →https://doi.org/10.1143/apex.4.031001openalex-snapshot
Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
inferredcites →https://doi.org/10.3390/coatings7090136openalex-snapshot
Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach
inferredcites →https://doi.org/10.7567/apex.9.025501openalex-snapshot
Annealing of an AlN buffer layer in N 2 –CO for growth of a high-quality AlN film on sapphire
inferredcites →https://doi.org/10.7567/jjap.53.100209openalex-snapshot
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
inferredcites →https://doi.org/10.7567/jjap.57.01ad05openalex-snapshot
Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4485856openalex-extracted
Simulation and Growth Study of Flux Rate Effects on Mnvpe Grown Aln
inferred← citeshttps://doi.org/10.2139/ssrn.4791235openalex-extracted
Influence of Porous Media and Substrate Rotation on Aln Deposition in Mnvpe Reactors Based on Cfd Simulations
inferred← citeshttps://doi.org/10.1007/s00339-022-06311-4openalex-snapshot
The relationship between annealing and nitrogen flow ratios during magnetron sputtering of AlN films
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2020.125567openalex-snapshot
Investigation on halide vapor phase epitaxial growth of AlN using N2 as N source
inferred← citeshttps://doi.org/10.1016/j.mssp.2021.105733openalex-snapshot
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
inferred← citeshttps://doi.org/10.1016/j.mssp.2022.106975openalex-snapshot
Effects of substrate pretreatment and annealing processes on AlN thin films prepared by EVPE
inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107843openalex-snapshot
Effect of flux rate on the growth of AlN films on sapphire by MNVPE
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108682openalex-snapshot
Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations
inferred← citeshttps://doi.org/10.1016/j.vacuum.2021.110539openalex-snapshot
Marked effects of Al-rich AlN transition layers on the performance of CdZnTe films for solar-blind photodetector
inferred← citeshttps://doi.org/10.1021/acs.cgd.1c00170openalex-snapshot
Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection
inferred← citeshttps://doi.org/10.1021/acs.cgd.3c01446openalex-snapshot
Relationship between Annealing and V/III Ratios during MNVPE of AlN Films
inferred← citeshttps://doi.org/10.1021/acsomega.2c04626openalex-snapshot
Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
inferred← citeshttps://doi.org/10.1038/s41467-025-67248-9openalex-snapshot
High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy
inferred← citeshttps://doi.org/10.1038/s41598-020-69992-yopenalex-snapshot
AlN formation by an Al/GaN substitution reaction
inferred← citeshttps://doi.org/10.1039/d0tc03208eopenalex-snapshot
Nanovoid-driven highly crystalline aluminum nitride and its application in solar-blind UV photodetectors
inferred← citeshttps://doi.org/10.1088/1361-6463/ab5496openalex-snapshot
Movement of a-type dislocations in AlN under electron beam irradiation
inferred← citeshttps://doi.org/10.1088/1674-1056/abd392openalex-snapshot
Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE*
inferred← citeshttps://doi.org/10.1088/1674-1056/ac6865openalex-snapshot
Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy
inferred← citeshttps://doi.org/10.1088/2053-1591/ab2c8copenalex-snapshot
Investigation of surface acoustic waves anisotropy on high-quality AlN/Sapphire grown by hydride vapor phase epitaxy
inferred← citeshttps://doi.org/10.1140/epjs/s11734-024-01433-7openalex-snapshot
Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate
inferred← citeshttps://doi.org/10.3390/ma17020327openalex-snapshot
Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy
inferred← citeshttps://doi.org/10.35848/1347-4065/ad85b9openalex-snapshot
4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates
inferred← citeshttps://doi.org/10.35848/1882-0786/abf31aopenalex-snapshot
Improving AlN crystalline quality by high-temperature ammonia-free microwave plasma chemical vapor deposition
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