On the public citation graph
Review of electrical stimulus methods of in situ transmission electron microscope to study resistive random access memory
0 signed · 101 inferred · view as graph
Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.
Is this your work? Sign in with ORCID and put your name on the
claims that are yours.
Reference health. See whether every reference in this work resolves to a
known work and none has been retracted — and get a dated CiteStamped
badge you can embed.
What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adma.201103920openalex-snapshot
Polarization‐Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts
inferredcites →https://doi.org/10.1002/adma.201104104openalex-snapshot
Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM
inferredcites →https://doi.org/10.1002/adma.201502758openalex-snapshot
Switching Kinetic of VCM‐Based Memristor: Evolution and Positioning of Nanofilament
inferredcites →https://doi.org/10.1002/adma.201602976openalex-snapshot
Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies
inferredcites →https://doi.org/10.1002/adma.201700212openalex-snapshot
Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM
inferredcites →https://doi.org/10.1002/adma.201805284openalex-snapshot
Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors
inferredcites →https://doi.org/10.1002/adma.202000699openalex-snapshot
In Situ TEM Study on Conversion‐Type Electrodes for Rechargeable Ion Batteries
inferredcites →https://doi.org/10.1002/advs.201800096openalex-snapshot
Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
inferredcites →https://doi.org/10.1002/aelm.201700263openalex-snapshot
Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses
inferredcites →https://doi.org/10.1002/aelm.201800143openalex-snapshot
Recommended Methods to Study Resistive Switching Devices
inferredcites →https://doi.org/10.1002/aelm.202100605openalex-snapshot
Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor
inferredcites →https://doi.org/10.1002/smll.201603116openalex-snapshot
Direct Observation of Dual‐Filament Switching Behaviors in Ta2O5‐Based Memristors
inferredcites →https://doi.org/10.1002/smll.201604259openalex-snapshot
In Situ Transmission Electron Microscopy Characterization and Manipulation of Two‐Dimensional Layered Materials beyond Graphene
inferredcites →https://doi.org/10.1002/smll.201604306openalex-snapshot
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials
inferredcites →https://doi.org/10.1002/smll.201703153openalex-snapshot
Observation of Resistive Switching Behavior in Crossbar Core–Shell Ni/NiO Nanowires Memristor
inferredcites →https://doi.org/10.1002/smsc.202100086openalex-snapshot
Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation
inferredcites →https://doi.org/10.1007/s00339-011-6273-8openalex-snapshot
Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell
inferredcites →https://doi.org/10.1007/s00339-021-05118-zopenalex-snapshot
Microstructures and properties of CrxFeNi(3-x)Al high-entropy alloys
inferredcites →https://doi.org/10.1007/s10853-018-2134-6openalex-snapshot
Oxide-based RRAM materials for neuromorphic computing
inferredcites →https://doi.org/10.1007/s11431-014-5718-7openalex-snapshot
Operation methods of resistive random access memory
inferredcites →https://doi.org/10.1016/j.chemgeo.2008.05.019openalex-snapshot
Focused Ion Beam (FIB) combined with SEM and TEM: Advanced analytical tools for studies of chemical composition, microstructure and crystal structure in geomaterials on a nanometre scale
inferredcites →https://doi.org/10.1016/j.jallcom.2018.03.320openalex-snapshot
Control the switching mode of Pt/HfO2/TiN RRAM devices by tuning the crystalline state of TiN electrode
inferredcites →https://doi.org/10.1016/j.jallcom.2021.163294openalex-snapshot
Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications
inferredcites →https://doi.org/10.1016/j.joule.2018.12.007openalex-snapshot
In Situ Transmission Electron Microscopy for Energy Applications
inferredcites →https://doi.org/10.1016/j.matchar.2005.12.007openalex-snapshot
Recent advances in FIB–TEM specimen preparation techniques
inferredcites →https://doi.org/10.1016/j.micron.2004.02.003openalex-snapshot
Radiation damage in the TEM and SEM
inferredcites →https://doi.org/10.1016/j.micron.2007.12.003openalex-snapshot
A guide on FIB preparation of samples containing stress corrosion crack tips for TEM and atom-probe analysis
inferredcites →https://doi.org/10.1016/j.micron.2008.02.006openalex-snapshot
In situ lift-out: Steps to improve yield and a comparison with other FIB TEM sample preparation techniques
inferredcites →https://doi.org/10.1016/j.nanoen.2018.09.029openalex-snapshot
Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM
inferredcites →https://doi.org/10.1016/j.nanoen.2020.104683openalex-snapshot
Observing topotactic phase transformation and resistive switching behaviors in low power SrCoOx memristor
inferredcites →https://doi.org/10.1016/j.nanoen.2020.105717openalex-snapshot
A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments
inferredcites →https://doi.org/10.1016/j.sse.2015.10.003openalex-snapshot
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays
inferredcites →https://doi.org/10.1017/s1431927605050087openalex-snapshot
Off-Axis Electron Holography of Unbiased and Reverse-Biased Focused Ion Beam Milled Sip-nJunctions
inferredcites →https://doi.org/10.1017/s1431927619002368openalex-snapshot
Three-dimensional electric field mapping of an electrically biased atom probe needle using off-axis electron holography
inferredcites →https://doi.org/10.1021/ac303528mopenalex-snapshot
In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories
inferredcites →https://doi.org/10.1021/acsami.9b21530openalex-snapshot
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM
inferredcites →https://doi.org/10.1021/acsnano.8b03806openalex-snapshot
In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure
inferredcites →https://doi.org/10.1021/nl4015638openalex-snapshot
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
inferredcites →https://doi.org/10.1021/nl500749qopenalex-snapshot
Revealing Controllable Nanowire Transformation through Cationic Exchange for RRAM Application
inferredcites →https://doi.org/10.1021/nl803387qopenalex-snapshot
Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
inferredcites →https://doi.org/10.1021/nl900006gopenalex-snapshot
Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
inferredcites →https://doi.org/10.1021/nn1010667openalex-snapshot
Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells
inferredcites →https://doi.org/10.1038/nature07049openalex-snapshot
Nanoscale holographic interferometry for strain measurements in electronic devices
inferredcites →https://doi.org/10.1038/ncomms14544openalex-snapshot
Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3
inferredcites →https://doi.org/10.1038/nmat2406openalex-snapshot
Electron tomography and holography in materials science
inferredcites →https://doi.org/10.1038/nnano.2009.456openalex-snapshot
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
inferredcites →https://doi.org/10.1038/nphoton.2012.2openalex-snapshot
Ultralow-power all-optical RAM based on nanocavities
inferredcites →https://doi.org/10.1038/s41598-016-0028-xopenalex-snapshot
Ror2 signaling regulates Golgi structure and transport through IFT20 for tumor invasiveness
inferredcites →https://doi.org/10.1038/s41928-018-0059-3openalex-snapshot
Scaling for edge inference of deep neural networks
inferredcites →https://doi.org/10.1038/s41928-021-00688-5openalex-snapshot
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
inferredcites →https://doi.org/10.1039/c6nr06293hopenalex-snapshot
In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface
inferredcites →https://doi.org/10.1039/c7nr02305gopenalex-snapshot
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO 2 -based RRAM device with a vanadium electrode
inferredcites →https://doi.org/10.1063/1.2001146openalex-snapshot
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
inferredcites →https://doi.org/10.1063/1.2172068openalex-snapshot
Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si p-n junctions by in situ annealing
inferredcites →https://doi.org/10.1063/1.2730557openalex-snapshot
The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions
inferredcites →https://doi.org/10.1063/1.3041475openalex-snapshot
Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices
inferredcites →https://doi.org/10.1063/1.3357283openalex-snapshot
Resistance switching in HfO2 metal-insulator-metal devices
inferredcites →https://doi.org/10.1063/1.3527086openalex-snapshot
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
inferredcites →https://doi.org/10.1063/1.3700723openalex-snapshot
In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor
inferredcites →https://doi.org/10.1063/1.4794519openalex-snapshot
Intrinsic nanofilamentation in resistive switching
inferredcites →https://doi.org/10.1063/1.4864396openalex-snapshot
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
inferredcites →https://doi.org/10.1088/0957-4484/24/11/115703openalex-snapshot
Silicon nanowires: electron holography studies of doped p–n junctions and biased Schottky barriers
inferredcites →https://doi.org/10.1088/0957-4484/24/38/384009openalex-snapshot
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device
inferredcites →https://doi.org/10.1088/1361-6463/abc77dopenalex-snapshot
High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast
inferredcites →https://doi.org/10.1088/1361-6528/ab99f0openalex-snapshot
Correlated and in-situ electrical transmission electron microscopy studies and related membrane-chip fabrication
inferredcites →https://doi.org/10.1088/1674-4926/40/2/020401openalex-snapshot
A novel spin-FET based on 2D antiferromagnet
inferredcites →https://doi.org/10.1088/1674-4926/40/7/070403openalex-snapshot
Defect engineering in two-dimensional materials
inferredcites →https://doi.org/10.1088/1674-4926/40/8/080201openalex-snapshot
Toward intrinsic room-temperature ferromagnetism in two-dimensional semiconductors
inferredcites →https://doi.org/10.1088/1674-4926/41/8/081002openalex-snapshot
Tellurene: An elemental 2D monolayer material beyond its bulk phases without van der Waals layered structures
inferredcites →https://doi.org/10.1103/physrevb.67.045328openalex-snapshot
Influence of charged oxide layers on TEM imaging of reverse-biased p − n junctions
inferredcites →https://doi.org/10.1103/physrevb.70.165313openalex-snapshot
Illumination effects in holographic imaging of the electrostatic potential of defects and p n junctions in transmission electron microscopy
inferredcites →https://doi.org/10.1103/physrevlett.88.238302openalex-snapshot
Quantitative Electron Holography of Biased Semiconductor Devices
inferredcites →https://doi.org/10.1109/led.2009.2032308openalex-snapshot
Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
inferredcites →https://doi.org/10.1109/led.2016.2622716openalex-snapshot
TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing
inferredcites →https://doi.org/10.1109/ted.2008.2010583openalex-snapshot
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
inferredcites →https://doi.org/10.1109/ted.2008.2010584openalex-snapshot
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
inferredcites →https://doi.org/10.1109/ted.2012.2202320openalex-snapshot
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
inferredcites →https://doi.org/10.1143/jjap.49.04dd18openalex-snapshot
Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing
inferredcites →https://doi.org/10.1146/annurev.matsci.37.052506.084232openalex-snapshot
Electron Holography: Applications to Materials Questions
inferredcites →https://doi.org/10.1149/10202.0029ecstopenalex-snapshot
Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications
inferredcites →https://doi.org/10.1186/1556-276x-10-1openalex-snapshot
A highly efficient flexible dye-sensitized solar cell based on nickel sulfide/platinum/titanium counter electrode
inferredcites →https://doi.org/10.1186/1556-276x-7-559openalex-snapshot
Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation
inferredcites →https://doi.org/10.1186/1556-276x-9-1openalex-snapshot
Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors
inferredcites →https://doi.org/10.1557/adv.2016.377openalex-snapshot
Nanoscale Hafnium Oxide RRAM Devices Exhibit Pulse Dependent Behavior and Multi-level Resistance Capability
inferredcites →https://doi.org/10.1557/mrs2007.63openalex-snapshot
TEM Sample Preparation and FIB-Induced Damage
inferredcites →https://doi.org/10.3390/electronics9050864openalex-snapshot
Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays
inferredcites →https://doi.org/10.3390/mi12080913openalex-snapshot
Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes
inferredcites →https://doi.org/10.3390/nano10081437openalex-snapshot
Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4661325openalex-extracted
Direct Observation of Conductive Filaments from 3d Views in Memristive Devices Based on 2d Sio2: Formation, Dissolution, and Vaporization
inferred← citeshttps://doi.org/10.1002/adfm.202526864openalex-snapshot
Visualized Atomic‐Scale Manufacturing Using Transmission Electron Microscope
inferred← citeshttps://doi.org/10.1002/aelm.202400313openalex-snapshot
Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+δ ‐Based Memristive Devices
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159584openalex-snapshot
Direct observation of conductive filaments from 3D views in memristive devices based on multilayered SiO2: Formation, Dissolution, and vaporization
inferred← citeshttps://doi.org/10.1016/j.cap.2023.02.004openalex-snapshot
Enhanced resistive switching performance of spinel MnCo2O4 resistive random access memory devices: Effects of annealing temperatures and annealing atmospheres
inferred← citeshttps://doi.org/10.1016/j.revmat.2026.100231openalex-snapshot
Transmission electron microscopy for visualized atomic-scale manufacturing: A frontier in nano-devices
inferred← citeshttps://doi.org/10.1016/s1872-2067(26)65084-xopenalex-snapshot
Atomic vacancies accelerating photochemical solar fuel and value-added chemical production: From materials to mechanism
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c01462openalex-snapshot
Measuring Electrical Resistivity at the Nanoscale in Phase-Change Materials
inferred← citeshttps://doi.org/10.1039/d4qi02179gopenalex-snapshot
In situ characterization techniques: main tools for revealing OER/ORR catalytic mechanism and reaction dynamics
inferred← citeshttps://doi.org/10.1039/d5ma00337gopenalex-snapshot
Advances in resistive switching memory: comprehensive insights into ECM mechanisms through TEM observations and analysis
inferred← citeshttps://doi.org/10.1093/mam/ozae044.781openalex-snapshot
Towards Atomic-Scale Investigation of Resistive Switching in Memristive Systems via MEMS-based In Situ Electron Microscopy
inferred← citeshttps://doi.org/10.1109/icsict62049.2024.10831395openalex-snapshot
In Situ Localization Techniques of Defects in Advanced Semiconductor Devices from Macro-Scale to Atomistic-Scale
inferred← citeshttps://doi.org/10.3390/nano13212859openalex-snapshot
Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process
Editorial review for independent work. ICSAC — the Institute for Complexity
Science and Advanced Computing — runs a structured editorial panel for researchers
publishing outside journals, and publishes on CiteStamp rails. Submission is free
and goes through ORCID: icsacinstitute.org/submit.