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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application
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High‐Throughput Characterization of Metal Electrode Performance for Electric‐Field‐Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures
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A 1D Vanadium Dioxide Nanochannel Constructed via Electric‐Field‐Induced Ion Transport and its Superior Metal–Insulator Transition
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Analytical Modeling of Organic–Inorganic CH3NH3PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition
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Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device
inferredcites →https://doi.org/10.1002/aelm.201901153openalex-snapshot
Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements
inferredcites →https://doi.org/10.1002/anie.201901106openalex-snapshot
Hybrid Organic–Inorganic Thermoelectric Materials and Devices
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Introduction of a novel guided bone regeneration memory shape based device
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Thermofluorescent Conjugated Polymer Sensors for Nano‐ and Microscale Temperature Monitoring
inferredcites →https://doi.org/10.1002/pssa.201330034openalex-snapshot
Study of atomic layer deposited Zr O 2 and Zr O 2/ T i O 2 films for resistive switching application
inferredcites →https://doi.org/10.1002/pssr.201900073openalex-snapshot
Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects
inferredcites →https://doi.org/10.1002/smll.201502906openalex-snapshot
Physically Transient Resistive Switching Memory Based on Silk Protein
inferredcites →https://doi.org/10.1002/smll.201600893openalex-snapshot
Ultra‐Lightweight Resistive Switching Memory Devices Based on Silk Fibroin
inferredcites →https://doi.org/10.1007/s00339-011-6273-8openalex-snapshot
Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell
inferredcites →https://doi.org/10.1007/s00339-014-8769-5openalex-snapshot
Ferromagnetic nano-conductive filament formed in Ni/TiO2/Pt resistive-switching memory
inferredcites →https://doi.org/10.1007/s10772-019-09660-3openalex-snapshot
High speed low area OBC DA based decimation filter for hearing aids application
inferredcites →https://doi.org/10.1007/s10825-013-0552-xopenalex-snapshot
Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory
inferredcites →https://doi.org/10.1007/s10853-018-2134-6openalex-snapshot
Oxide-based RRAM materials for neuromorphic computing
inferredcites →https://doi.org/10.1007/s10854-019-02598-xopenalex-snapshot
Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics
inferredcites →https://doi.org/10.1007/s42835-019-00107-yopenalex-snapshot
Mimicking Synaptic Behaviors with Cross-Point Structured TiOx/TiOy-Based Filamentary RRAM for Neuromorphic Applications
inferredcites →https://doi.org/10.1016/j.apsusc.2017.07.257openalex-snapshot
Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS 2 film
inferredcites →https://doi.org/10.1016/j.apsusc.2018.09.022openalex-snapshot
Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid
inferredcites →https://doi.org/10.1016/j.apsusc.2019.02.216openalex-snapshot
NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment
inferredcites →https://doi.org/10.1016/j.cap.2019.09.011openalex-snapshot
Mechanism analysis of switching direction transformation in an Er2O3 based RRAM device
inferredcites →https://doi.org/10.1016/j.carbon.2014.03.055openalex-snapshot
Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes
inferredcites →https://doi.org/10.1016/j.celrep.2019.09.006openalex-snapshot
Synaptic Specializations of Melanopsin-Retinal Ganglion Cells in Multiple Brain Regions Revealed by Genetic Label for Light and Electron Microscopy
inferredcites →https://doi.org/10.1016/j.ceramint.2019.05.157openalex-snapshot
Effects of moisture and electrode material on AlN-based resistive random access memory
inferredcites →https://doi.org/10.1016/j.jallcom.2018.10.249openalex-snapshot
Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance
inferredcites →https://doi.org/10.1016/j.jallcom.2019.05.114openalex-snapshot
Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface
inferredcites →https://doi.org/10.1016/j.jallcom.2019.152564openalex-snapshot
Multi-factors induced evolution of resistive switching properties for TiN/Gd2O3/Au RRAM devices
inferredcites →https://doi.org/10.1016/j.jallcom.2019.153603openalex-snapshot
Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device
inferredcites →https://doi.org/10.1016/j.jallcom.2019.153625openalex-snapshot
Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse
inferredcites →https://doi.org/10.1016/j.jallcom.2020.153762openalex-snapshot
Micro-light-emitting diode with n-GaN/NiO/Au-based resistive-switching electrode for compact driving circuitry
inferredcites →https://doi.org/10.1016/j.jallcom.2020.154126openalex-snapshot
Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory
inferredcites →https://doi.org/10.1016/j.jallcom.2020.154434openalex-snapshot
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
inferredcites →https://doi.org/10.1016/j.jcis.2017.10.113openalex-snapshot
Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices
inferredcites →https://doi.org/10.1016/j.jddst.2019.101174openalex-snapshot
Metal nanoparticles synthesis: An overview on methods of preparation, advantages and disadvantages, and applications
inferredcites →https://doi.org/10.1016/j.jmmm.2019.165728openalex-snapshot
Resistive switching in FeNi/Al2O3/NiO/Pt structure with various Al2O3 layer thicknesses
inferredcites →https://doi.org/10.1016/j.jmst.2015.10.018openalex-snapshot
Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review
inferredcites →https://doi.org/10.1016/j.mattod.2017.12.001openalex-snapshot
From biomaterial-based data storage to bio-inspired artificial synapse
inferredcites →https://doi.org/10.1016/j.mee.2011.03.055openalex-snapshot
Filament diffusion model for simulating reset and retention processes in RRAM
inferredcites →https://doi.org/10.1016/j.mee.2012.09.005openalex-snapshot
Fabrication of ZrO2 layer through electrohydrodynamic atomization for the printed resistive switch (memristor)
inferredcites →https://doi.org/10.1016/j.mee.2018.01.009openalex-snapshot
Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks
inferredcites →https://doi.org/10.1016/j.mee.2020.111358openalex-snapshot
Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
inferredcites →https://doi.org/10.1016/j.microrel.2019.05.005openalex-snapshot
An oxygen vacancy mediated Ag reduction and nucleation mechanism in SiO2 RRAM devices
inferredcites →https://doi.org/10.1016/j.mssp.2019.104769openalex-snapshot
Bipolar resistive switching, synaptic plasticity and non-volatile memory effects in the solution-processed zinc oxide thin film
inferredcites →https://doi.org/10.1016/j.mssp.2019.104837openalex-snapshot
Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application
inferredcites →https://doi.org/10.1016/j.mssp.2019.104907openalex-snapshot
Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir
inferredcites →https://doi.org/10.1016/j.mssp.2020.104951openalex-snapshot
Forming-ready resistance random access memory using randomly pre-grown conducting filaments via pre-forming
inferredcites →https://doi.org/10.1016/j.nanoen.2020.104472openalex-snapshot
Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications
inferredcites →https://doi.org/10.1016/j.neucom.2019.09.099openalex-snapshot
Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy
inferredcites →https://doi.org/10.1016/j.optmat.2019.01.069openalex-snapshot
Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot
inferredcites →https://doi.org/10.1016/j.scib.2019.01.016openalex-snapshot
Two-dimensional materials for synaptic electronics and neuromorphic systems
inferredcites →https://doi.org/10.1016/j.spmi.2015.12.044openalex-snapshot
Interface-induced two-step RESET for filament-based multi-level resistive memory
inferredcites →https://doi.org/10.1016/j.sse.2010.12.014openalex-snapshot
Bipolar resistive switching of chromium oxide for resistive random access memory
inferredcites →https://doi.org/10.1016/j.sse.2018.04.007openalex-snapshot
Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film
inferredcites →https://doi.org/10.1016/j.sse.2019.02.008openalex-snapshot
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation
inferredcites →https://doi.org/10.1016/j.sse.2019.107742openalex-snapshot
Initial synaptic weight distribution for fast learning speed and high recognition rate in STDP-based spiking neural network
inferredcites →https://doi.org/10.1016/j.sse.2020.107772openalex-snapshot
A study of conductance update method for Ni/SiNx/Si analog synaptic device
inferredcites →https://doi.org/10.1016/j.ssi.2017.07.013openalex-snapshot
Multi-temperature deposition scheme for improved resistive switching behavior of Ti/AlO x /Ti MIM structure
inferredcites →https://doi.org/10.1016/j.tsf.2010.08.004openalex-snapshot
Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition
inferredcites →https://doi.org/10.1016/j.tsf.2011.04.205openalex-snapshot
Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics
inferredcites →https://doi.org/10.1016/j.vacuum.2019.108842openalex-snapshot
A first-principles study of Cu and Al doping in ZrO2 for RRAM device applications
inferredcites →https://doi.org/10.1021/acsaelm.8b00070openalex-snapshot
Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices
inferredcites →https://doi.org/10.1021/acsami.0c00877openalex-snapshot
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
inferredcites →https://doi.org/10.1021/acsami.9b11721openalex-snapshot
Graphene-Edge Electrode on a Cu-Based Chalcogenide Selector for 3D Vertical Memristor Cells
inferredcites →https://doi.org/10.1021/acsami.9b21530openalex-snapshot
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM
inferredcites →https://doi.org/10.1021/acsnano.7b03347openalex-snapshot
Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks Based on Renewable Materials
inferredcites →https://doi.org/10.1021/acssuschemeng.8b06501openalex-snapshot
Nanocellulose and Nanochitin Cryogels Improve the Efficiency of Dye Solar Cells
inferredcites →https://doi.org/10.1021/jp800624uopenalex-snapshot
Resistive Switching in Organic Memories with a Spin-Coated Metal Oxide Nanoparticle Layer
inferredcites →https://doi.org/10.1021/la061504zopenalex-snapshot
Nonvolatile Polymer Memory Device Based on Bistable Electrical Switching in a Thin Film of Poly(N-vinylcarbazole) with Covalently Bonded C60
inferredcites →https://doi.org/10.1021/nn202983nopenalex-snapshot
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
inferredcites →https://doi.org/10.1038/78829openalex-snapshot
Competitive Hebbian learning through spike-timing-dependent synaptic plasticity
inferredcites →https://doi.org/10.1038/ncomms9407openalex-snapshot
Metal oxide-resistive memory using graphene-edge electrodes
inferredcites →https://doi.org/10.1038/nmat3054openalex-snapshot
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
inferredcites →https://doi.org/10.1038/nnano.2009.456openalex-snapshot
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
inferredcites →https://doi.org/10.1038/s41380-020-0686-8openalex-snapshot
Cooperative synaptic and intrinsic plasticity in a disynaptic limbic circuit drive stress-induced anhedonia and passive coping in mice
inferredcites →https://doi.org/10.1038/s41467-020-15158-3openalex-snapshot
Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices
inferredcites →https://doi.org/10.1038/s41598-017-12579-xopenalex-snapshot
Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film
inferredcites →https://doi.org/10.1038/s41598-020-58831-9openalex-snapshot
Memristive synapses connect brain and silicon spiking neurons
inferredcites →https://doi.org/10.1038/s41928-018-0118-9openalex-snapshot
Electronic synapses made of layered two-dimensional materials
inferredcites →https://doi.org/10.1038/srep10022openalex-snapshot
Nonvolatile Bio-Memristor Fabricated with Egg Albumen Film
inferredcites →https://doi.org/10.1038/srep13785openalex-snapshot
Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes
inferredcites →https://doi.org/10.1038/srep18639openalex-snapshot
Emulating short-term synaptic dynamics with memristive devices
inferredcites →https://doi.org/10.1038/srep23069openalex-snapshot
Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
inferredcites →https://doi.org/10.1039/c1nr10557dopenalex-snapshot
Device and SPICE modeling of RRAM devices
inferredcites →https://doi.org/10.1039/c6tc03607dopenalex-snapshot
Resistive switching characteristics of all-solution-based Ag/TiO 2 /Mo-doped In 2 O 3 devices for non-volatile memory applications
inferredcites →https://doi.org/10.1039/c8cp03492copenalex-snapshot
Overwhelming coexistence of negative differential resistance effect and RRAM
inferredcites →https://doi.org/10.1039/c8fd00127hopenalex-snapshot
RRAM-based synapse devices for neuromorphic systems
inferredcites →https://doi.org/10.1039/c8tc05489dopenalex-snapshot
A bio-inspired electronic synapse using solution processable organic small molecule
inferredcites →https://doi.org/10.1039/c9nr08943hopenalex-snapshot
An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode
inferredcites →https://doi.org/10.1039/c9tc04880dopenalex-snapshot
Interface-engineered reliable HfO 2 -based RRAM for synaptic simulation
inferredcites →https://doi.org/10.1039/c9tc06552kopenalex-snapshot
Electrode-controlled confinement of conductive filaments in a nanocolumn embedded symmetric–asymmetric RRAM structure
inferredcites →https://doi.org/10.1063/1.1702530openalex-snapshot
Low-Frequency Negative Resistance in Thin Anodic Oxide Films
inferredcites →https://doi.org/10.1063/1.2966141openalex-snapshot
Direct observation of oxygen movement during resistance switching in NiO/Pt film
inferredcites →https://doi.org/10.1063/1.322942openalex-snapshot
Polarity-dependent memory switching and behavior of Ag dendrite in Ag-photodoped amorphous As2S3 films
inferredcites →https://doi.org/10.1063/1.3367752openalex-snapshot
Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions
inferredcites →https://doi.org/10.1063/1.3617426openalex-snapshot
Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device
inferredcites →https://doi.org/10.1063/1.3696672openalex-snapshot
Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
inferredcites →https://doi.org/10.1063/1.3697648openalex-snapshot
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
inferredcites →https://doi.org/10.1063/1.3697690openalex-snapshot
First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
inferredcites →https://doi.org/10.1063/1.4714888openalex-snapshot
Interface mediated resistive switching in epitaxial NiO nanostructures
inferredcites →https://doi.org/10.1063/1.4774089openalex-snapshot
Resistive switching of oxygen enhanced TiO2 thin-film devices
inferredcites →https://doi.org/10.1063/1.4803062openalex-snapshot
Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures
inferredcites →https://doi.org/10.1063/1.4812486openalex-snapshot
Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices
inferredcites →https://doi.org/10.1063/1.4823734openalex-snapshot
Forming free resistive switching in graphene oxide thin film for thermally stable nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.4823851openalex-snapshot
Evidence of electrochemical resistive switching in the hydrated alumina layers of Cu/CuTCNQ/(native AlOx)/Al junctions
inferredcites →https://doi.org/10.1063/1.4864653openalex-snapshot
Towards forming-free resistive switching in oxygen engineered HfO2−x
inferredcites →https://doi.org/10.1063/1.4958633openalex-snapshot
Direct observation of Ag filament growth and unconventional SET-RESET operation in GeTe amorphous films
inferredcites →https://doi.org/10.1063/1.5116359openalex-snapshot
Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor
inferredcites →https://doi.org/10.1088/0022-3727/47/6/065302openalex-snapshot
High- k -rare-earth-oxide Eu 2 O 3 films for transparent resistive random access memory (RRAM) devices
inferredcites →https://doi.org/10.1088/0022-3727/49/9/095111openalex-snapshot
Stability, bistability and instability of amorphous ZrO2resistive memory devices
inferredcites →https://doi.org/10.1088/0957-4484/21/42/425205openalex-snapshot
Forming and switching mechanisms of a cation-migration-based oxide resistive memory
inferredcites →https://doi.org/10.1088/0957-4484/23/43/435705openalex-snapshot
Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch
inferredcites →https://doi.org/10.1088/0957-4484/24/33/335201openalex-snapshot
Conductance quantization in a Ag filament-based polymer resistive memory
inferredcites →https://doi.org/10.1098/rspa.1967.0191openalex-snapshot
New conduction and reversible memory phenomena in thin insulating films
inferredcites →https://doi.org/10.1109/55.20394openalex-snapshot
Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band
inferredcites →https://doi.org/10.1109/cicc48029.2020.9075887openalex-snapshot
Compute-in-Memory with Emerging Nonvolatile-Memories: Challenges and Prospects
inferredcites →https://doi.org/10.1109/cstic.2017.7919731openalex-snapshot
Recent progress in RRAM technology: From compact models to applications
inferredcites →https://doi.org/10.1109/edl.1984.25808openalex-snapshot
Fast optoelectronic crosspoint electrical switching of GaAs photoconductors
inferredcites →https://doi.org/10.1109/eurosoi-ulis45800.2019.9041877openalex-snapshot
Al/GO/Si/ Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature
inferredcites →https://doi.org/10.1109/iedm.2017.8268333openalex-snapshot
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses
inferredcites →https://doi.org/10.1109/jeds.2019.2915975openalex-snapshot
Impact of the Stacking Order of HfO x and AlO x Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
inferredcites →https://doi.org/10.1109/jeds.2019.2934471openalex-snapshot
Design of the RRAM-Based Polymorphic Look-Up Table Scheme
inferredcites →https://doi.org/10.1109/led.2010.2040799openalex-snapshot
Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories
inferredcites →https://doi.org/10.1109/led.2011.2166371openalex-snapshot
Forming-Free $\hbox{TiO}_{2}$-Based Resistive Switching Devices on CMOS-Compatible W-Plugs
inferredcites →https://doi.org/10.1109/led.2017.2722463openalex-snapshot
Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor
inferredcites →https://doi.org/10.1109/led.2019.2961408openalex-snapshot
Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory
inferredcites →https://doi.org/10.1109/led.2020.2968629openalex-snapshot
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing
inferredcites →https://doi.org/10.1109/led.2020.2979236openalex-snapshot
Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device
inferredcites →https://doi.org/10.1109/led.2020.2986502openalex-snapshot
Improvement in Threshold Switching Performance Using Al₂O₃ Interfacial Layer in Ag/Al₂O₃/SiOₓ/W Cross-Point Platform
inferredcites →https://doi.org/10.1109/nmdc.2015.7439273openalex-snapshot
Multilevel resistance in Ti/Pt/AlOx/HfOy/Ti/Pt/Ag resistive switching devices
inferredcites →https://doi.org/10.1109/nmdc.2018.8605915openalex-snapshot
An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing
inferredcites →https://doi.org/10.1109/snw.2016.7577980openalex-snapshot
A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight element
inferredcites →https://doi.org/10.1109/ted.2008.2010583openalex-snapshot
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
inferredcites →https://doi.org/10.1109/ted.2009.2024046openalex-snapshot
Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices
inferredcites →https://doi.org/10.1109/ted.2011.2167513openalex-snapshot
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
inferredcites →https://doi.org/10.1109/ted.2012.2201158openalex-snapshot
A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application
inferredcites →https://doi.org/10.1109/ted.2014.2312611openalex-snapshot
Highly Transparent Dysprosium Oxide-Based RRAM With Multilayer Graphene Electrode for Low-Power Nonvolatile Memory Application
inferredcites →https://doi.org/10.1109/ted.2014.2325531openalex-snapshot
Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches
inferredcites →https://doi.org/10.1109/ted.2014.2330200openalex-snapshot
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
inferredcites →https://doi.org/10.1109/ted.2016.2526647openalex-snapshot
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
inferredcites →https://doi.org/10.1109/ted.2018.2847413openalex-snapshot
Understanding Synaptic Mechanisms in SrTiO3 RRAM Devices
inferredcites →https://doi.org/10.1109/ted.2019.2928626openalex-snapshot
Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM
inferredcites →https://doi.org/10.1109/ted.2019.2959883openalex-snapshot
High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition
inferredcites →https://doi.org/10.1109/ted.2019.2961505openalex-snapshot
ReRAM: History, Status, and Future
inferredcites →https://doi.org/10.1109/twc.2016.2616338openalex-snapshot
Sequential Beamforming for Multiuser MIMO With Full-Duplex Training
inferredcites →https://doi.org/10.1111/jace.14024openalex-snapshot
SrTiO 3 ‐Based Resistive Switching Memory Device with Graphene Nanoribbon Electrodes
inferredcites →https://doi.org/10.1117/12.2235089openalex-snapshot
RRAM-based hardware implementations of artificial neural networks: progress update and challenges ahead
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Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point
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inferred← citeshttps://doi.org/10.1016/j.prime.2023.100397openalex-snapshot
Ternary encoder and decoder designs in RRAM and CNTFET technologies
inferred← citeshttps://doi.org/10.1016/j.solidstatesciences.2026.108256openalex-snapshot
Electrode-dependent resistive switching in sodium alginate-based ReRAM: Thermal stability and aging effects
inferred← citeshttps://doi.org/10.1016/j.sse.2021.108132openalex-snapshot
Performance variation of solution-processed memristor induced by different top electrode
inferred← citeshttps://doi.org/10.1016/j.sse.2024.108948openalex-snapshot
Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination
inferred← citeshttps://doi.org/10.1016/j.surfin.2026.108843openalex-snapshot
Electrode dependence and interfacial effects in modulating resistive switching performance of CuxO based memristors
inferred← citeshttps://doi.org/10.1016/j.tsf.2022.139150openalex-snapshot
Resistive switching and conductance quantization in poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)-based resistive random access memory device with printable top electrodes
inferred← citeshttps://doi.org/10.1016/j.tsf.2025.140774openalex-snapshot
Complementary memristor based on Al/TiO2/graphene oxide/indium tin oxides Resistive Random Access Memory by spin-coating techniques
inferred← citeshttps://doi.org/10.1016/j.vacuum.2021.110747openalex-snapshot
Effect of the coexistence of active metals and boron vacancies on the performance of 2D hexagonal boron nitride resistance memory
inferred← citeshttps://doi.org/10.1016/j.vacuum.2023.112472openalex-snapshot
Ultra-low power resistive random-access memory based on VO2/TiO2 nanotubes composite film
inferred← citeshttps://doi.org/10.1016/j.vacuum.2023.112623openalex-snapshot
Studying of threshold switching behavior based on programmable metallization cells selector by KMC method
inferred← citeshttps://doi.org/10.1021/acs.chemrev.4c00454openalex-snapshot
Localized Conduction Channels in Memristors
inferred← citeshttps://doi.org/10.1021/acs.jpcc.4c00703openalex-snapshot
Nonvolatile Ternary Memory Devices Based on MoO3 Nanoparticles Embedded in Conjugated Copolymer with Hierarchy Charge Traps
inferred← citeshttps://doi.org/10.1021/acs.jpcc.4c03270openalex-snapshot
Crystal Structure, Stability, and Metal–Insulator–Metal Transitions in Tantalum Oxides: Implication for Memristive Devices
inferred← citeshttps://doi.org/10.1021/acs.jpclett.1c03031openalex-snapshot
Resistance Switching Behavior of a Perhydropolysilazane-Derived SiOx-Based Memristor
inferred← citeshttps://doi.org/10.1021/acs.jpclett.2c03850openalex-snapshot
Electrochemical Resistive Switching in Nanoporous Hybrid Films by One-Step Molecular Layer Deposition
inferred← citeshttps://doi.org/10.1021/acs.jpclett.4c02389openalex-snapshot
Resistive Switching Characteristics of NiO Thin Films Influenced by Changes in the Diameter of Nanometer-Scale Top Electrodes
inferred← citeshttps://doi.org/10.1021/acs.jpclett.5c00194openalex-snapshot
Reconfigurable Inverter Based on Ferroelectric-Gating MoS2 Field-Effect Transistors toward In-Memory Logic Operations
inferred← citeshttps://doi.org/10.1021/acs.nanolett.3c04057openalex-snapshot
Quantum Conductance in Vertical Hexagonal Boron Nitride Memristors with Graphene-Edge Contacts
inferred← citeshttps://doi.org/10.1021/acsaelm.0c01094openalex-snapshot
Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers
inferred← citeshttps://doi.org/10.1021/acsaelm.1c00078openalex-snapshot
Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00037openalex-snapshot
Mechanism of Oxygen Vacancy Filament-Based Resistive Switching in Non-polar Hf0.5Zr0.5O2-δ Thin Films
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00034openalex-snapshot
Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00782openalex-snapshot
Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00913openalex-snapshot
CsBr Immersion for Organic–Inorganic Hybrid Perovskite-Based Memristors: Controllable Grain, Poole–Frenkel Emission, and Electrical Properties
inferred← citeshttps://doi.org/10.1021/acsaelm.4c01331openalex-snapshot
Forming-Free Multilevel Resistive Switching in a ZnO@β-SiC Composite for Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acsaelm.5c00131openalex-snapshot
Cognitive Learning and Neuromorphic Systems Using Resistive Switching Random-Access Memory
inferred← citeshttps://doi.org/10.1021/acsaelm.5c00483openalex-snapshot
Research on Resistive Switching and Synaptic Performance of CeOx/TaOx-Based Memristor
inferred← citeshttps://doi.org/10.1021/acsaelm.5c01300openalex-snapshot
Array-Integrated Memristor with an Interference-Suppressed Pulse Scheme for Multibit Neuromorphic and Edge Computing
inferred← citeshttps://doi.org/10.1021/acsaelm.5c01301openalex-snapshot
Dual-Mode Functionality in Analog-Weight-Tunable TiOx-Based RRAM: Exploiting Optical and Electrical Stimuli for Synaptic Behaviors
inferred← citeshttps://doi.org/10.1021/acsaelm.5c01372openalex-snapshot
Memristors Based on Metal–Organic Frameworks: Synthesis, Mechanism, Categories, and Future
inferred← citeshttps://doi.org/10.1021/acsaelm.6c00045openalex-snapshot
Sequential Process Optimization of HfO 2 /Al 2 O 3 Bilayer RRAM for Enhanced Synaptic Performance and On-Chip MNIST Learning
inferred← citeshttps://doi.org/10.1021/acsami.5c03859openalex-snapshot
Engineering Conjugated Bridges in TPE-BT-Based Donor–Acceptor Molecules for Optimized Resistive Random Access Memory
inferred← citeshttps://doi.org/10.1021/acsami.5c04446openalex-snapshot
Biocompatible Lactulose-Based Resistive Random Access Memory for Implantable Electronics
inferred← citeshttps://doi.org/10.1021/acsanm.3c06272openalex-snapshot
Scanning Tunneling Microscopy Investigation of Synaptic Behavior in AgInS2 Quantum Dots: Effect of Ion Transport in Neuromorphic Applications
inferred← citeshttps://doi.org/10.1021/acsanm.4c06039openalex-snapshot
Flexible Memristors for Implantable Applications
inferred← citeshttps://doi.org/10.1021/acsanm.5c01941openalex-snapshot
Ionic and Metallic Ag-Doped Oxide Nanocomposites for High-Performance Memristors
inferred← citeshttps://doi.org/10.1021/acsmaterialslett.5c00790openalex-snapshot
Reconfigurable Tin-Halide Perovskite Resistive Switching Memory for Reservoir Computing System in Braille Code Translator
inferred← citeshttps://doi.org/10.1021/acsnano.3c05493openalex-snapshot
Highly Reliable 3D Channel Memory and Its Application in a Neuromorphic Sensory System for Hand Gesture Recognition
inferred← citeshttps://doi.org/10.1021/acsnano.4c00333openalex-snapshot
Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems
inferred← citeshttps://doi.org/10.1021/acsnano.4c06942openalex-snapshot
Memristive Architectures Exploiting Self-Compliance Multilevel Implementation on 1 kb Crossbar Arrays for Online and Offline Learning Neuromorphic Applications
inferred← citeshttps://doi.org/10.1021/acsnano.6c09072openalex-snapshot
In Situ Transmission Electron Microscopy Observation of Redox–Structure-Coupled Resistive Switching in High-Entropy Oxide Memristors
inferred← citeshttps://doi.org/10.1021/acsomega.3c00165openalex-snapshot
Degradable Carrageenan as a Substrate and Resistive Material for Flexible Applications
inferred← citeshttps://doi.org/10.1021/acsomega.3c05352openalex-snapshot
Wide-Range Synaptic Current Responses with a Liquid Ga Electrode via a Surface Redox Reaction in a NaOH Solution at Different Molar Concentrations
inferred← citeshttps://doi.org/10.1021/acsomega.4c02990openalex-snapshot
Research on Residual Gas Adsorption on Surface of Hexagonal Boron Nitride-Based Memristor
inferred← citeshttps://doi.org/10.1021/acssensors.3c02217openalex-snapshot
An Artificial Olfactory System Based on a Memristor Can Simulate Organ Injury and Functions in Air Purification
inferred← citeshttps://doi.org/10.1021/acssuschemeng.4c01399openalex-snapshot
Artificial Touch Neurons Based on Starch Memristors and Hydrogel Sensors
inferred← citeshttps://doi.org/10.1038/s41427-026-00632-zopenalex-snapshot
Flexible organic piezoelectric nanogenerator with high power density and excellent ferroelectric and memristor characteristics
inferred← citeshttps://doi.org/10.1038/s41524-022-00770-2openalex-snapshot
Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories
inferred← citeshttps://doi.org/10.1038/s41578-022-00434-zopenalex-snapshot
Dynamical memristors for higher-complexity neuromorphic computing
inferred← citeshttps://doi.org/10.1038/s41598-023-44110-wopenalex-snapshot
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
inferred← citeshttps://doi.org/10.1038/s41598-025-15251-xopenalex-snapshot
Reconfigurable artificial neuron and synapse enabled through a single alloyed memristor
inferred← citeshttps://doi.org/10.1038/s41598-025-93423-5openalex-snapshot
A keyword-based approach to analyzing scientific research trends: ReRAM present and future
inferred← citeshttps://doi.org/10.1038/s44335-025-00023-7openalex-snapshot
Advanced AI computing enabled by 2D material-based neuromorphic devices
inferred← citeshttps://doi.org/10.1039/d1ra08103aopenalex-snapshot
Improved resistive switching characteristics of a multi-stacked HfO 2 /Al 2 O 3 /HfO 2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study
inferred← citeshttps://doi.org/10.1039/d2nh00031hopenalex-snapshot
Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology
inferred← citeshttps://doi.org/10.1039/d2nr01872aopenalex-snapshot
Review of electrical stimulus methods of in situ transmission electron microscope to study resistive random access memory
inferred← citeshttps://doi.org/10.1039/d3cp02177gopenalex-snapshot
Forming-free plant resistive random access memory based on the Coulomb blockade effect produced by gold nanoparticles
inferred← citeshttps://doi.org/10.1039/d3ma00453hopenalex-snapshot
Memory characteristics of anthracene-based polyimides in non-volatile resistive memory devices
inferred← citeshttps://doi.org/10.1039/d3nr02591hopenalex-snapshot
Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory
inferred← citeshttps://doi.org/10.1039/d3nr04917eopenalex-snapshot
Effects of thermal annealing on analog resistive switching behavior in bilayer HfO 2 /ZnO synaptic devices: the role of ZnO grain boundaries
inferred← citeshttps://doi.org/10.1039/d3ra02075dopenalex-snapshot
Synaptic plasticity and learning behaviour in multilevel memristive devices
inferred← citeshttps://doi.org/10.1039/d3tc03847eopenalex-snapshot
NIR-triggered logic gate in MXene-modified perovskite resistive random access memory
inferred← citeshttps://doi.org/10.1039/d3tc04131jopenalex-snapshot
Advancements in memory technologies for artificial synapses
inferred← citeshttps://doi.org/10.1039/d3tc04346kopenalex-snapshot
Barium oxide write-once read-many-times memory with a high resistance window
inferred← citeshttps://doi.org/10.1039/d4ma00399copenalex-snapshot
Emulating synaptic plasticity with a poly[ N -(3-(9 H -carbazol-9-yl)propyl)methacrylamide] memristor
inferred← citeshttps://doi.org/10.1039/d4tc02924kopenalex-snapshot
The synthesis of MOF nanosheets and their application in MOF-based resistance random access memory devices
inferred← citeshttps://doi.org/10.1039/d5tc01371bopenalex-snapshot
Amorphous Ta 2 O 5 memristor with excellent self-selective and artificial synaptic properties for artificial neural networks
inferred← citeshttps://doi.org/10.1039/d5tc02402aopenalex-snapshot
Material-engineered self-compliant memristor enabling multibit synaptic learning and in-memory computing
inferred← citeshttps://doi.org/10.1039/d5tc02712hopenalex-snapshot
Bioinspired multisensory fusion using a MoTe 2 optoelectronic memristor with oxygen plasma treatment for in-sensor reservoir computing
inferred← citeshttps://doi.org/10.1039/d6nr01032fopenalex-snapshot
Electro-optical memristors: from the origin to device implementation
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