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Large and anisotropic carrier mobility in monolayers of the MA 2 Z 4 series (M = Cr, Mo, W; A = Si, Ge; and Z = N, P)

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adma.201702522openalex-snapshot

Graphene‐Contacted Ultrashort Channel Monolayer MoS 2 Transistors

inferredcites →https://doi.org/10.1002/aelm.201700524openalex-snapshot

Controlled Growth of Bilayer‐MoS2 Films and MoS2‐Based Field‐Effect Transistor (FET) Performance Optimization

inferredcites →https://doi.org/10.1002/anie.199718081openalex-snapshot

ELF: The Electron Localization Function

inferredcites →https://doi.org/10.1002/inf2.12177openalex-snapshot

Strain engineering of two‐dimensional materials: Methods, properties, and applications

inferredcites →https://doi.org/10.1007/s10853-014-8370-5openalex-snapshot

Theoretical study on strain-induced variations in electronic properties of monolayer MoS2

inferredcites →https://doi.org/10.1016/j.apsusc.2021.149862openalex-snapshot

Tunable electronic and magnetic properties of MoSi2N4 monolayer via vacancy defects, atomic adsorption and atomic doping

inferredcites →https://doi.org/10.1016/j.nanoen.2020.105716openalex-snapshot

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

inferredcites →https://doi.org/10.1016/j.physe.2021.114753openalex-snapshot

Strain effects on monolayer MoSi2N4: Ideal strength and failure mechanism

inferredcites →https://doi.org/10.1016/j.physe.2021.114964openalex-snapshot

Strain modulation of electronic and optical properties of monolayer MoSi2N4

inferredcites →https://doi.org/10.1016/j.rinp.2021.104864openalex-snapshot

First-principles calculations to investigate stability, electronic and optical properties of fluorinated MoSi2N4 monolayer

inferredcites →https://doi.org/10.1016/j.ssc.2015.11.017openalex-snapshot

Strain engineering of electronic properties of transition metal dichalcogenide monolayers

inferredcites →https://doi.org/10.1021/acs.jpcc.1c03585openalex-snapshot

Strained MoSi2N4 Monolayers with Excellent Solar Energy Absorption and Carrier Transport Properties

inferredcites →https://doi.org/10.1021/acs.jpcc.8b08885openalex-snapshot

Uncovering a Stable Phase in Group V Transition-metal Dinitride (MN2, M = Ta, Nb, V) Nanosheets and Their Electronic Properties via First-principles Investigations

inferredcites →https://doi.org/10.1021/acs.nanolett.5b05288openalex-snapshot

The Electronic Thermal Conductivity of Graphene

inferredcites →https://doi.org/10.1021/acs.nanolett.6b04576openalex-snapshot

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

inferredcites →https://doi.org/10.1021/acsaelm.1c00829openalex-snapshot

Quantum Transport of Sub-10 nm Monolayer WGe2N4 Transistors

inferredcites →https://doi.org/10.1021/acsami.1c17721openalex-snapshot

2D Nb3SBr7 and Ta3SBr7: Experimentally Achievable Janus Photocatalysts with Robust Coexistence of Strong Optical Absorption, Intrinsic Charge Separation, and Ultrahigh Solar-to-Hydrogen Efficiency

inferredcites →https://doi.org/10.1021/acsami.9b11052openalex-snapshot

High-Mobility InSe Transistors: The Nature of Charge Transport

inferredcites →https://doi.org/10.1021/acsnano.7b03531openalex-snapshot

High-Mobility InSe Transistors: The Role of Surface Oxides

inferredcites →https://doi.org/10.1021/acsomega.1c03728openalex-snapshot

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb 2 Se 9 Material

inferredcites →https://doi.org/10.1021/jacs.8b11350openalex-snapshot

Two-Dimensional PC 6 with Direct Band Gap and Anisotropic Carrier Mobility

inferredcites →https://doi.org/10.1021/jp510662nopenalex-snapshot

Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study

inferredcites →https://doi.org/10.1021/nl500935zopenalex-snapshot

Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

inferredcites →https://doi.org/10.1021/nl502399yopenalex-snapshot

Mechanical Strength of Nanoporous Graphene as a Desalination Membrane

inferredcites →https://doi.org/10.1021/nl803316hopenalex-snapshot

Operation of Graphene Transistors at Gigahertz Frequencies

inferredcites →https://doi.org/10.1038/nnano.2010.89openalex-snapshot

Graphene transistors

inferredcites →https://doi.org/10.1038/nnano.2014.85openalex-snapshot

Phosphorus joins the family

inferredcites →https://doi.org/10.1038/s41467-019-13993-7openalex-snapshot

U1 snRNP regulates cancer cell migration and invasion in vitro

inferredcites →https://doi.org/10.1039/c5nr00355eopenalex-snapshot

Electro-mechanical anisotropy of phosphorene

inferredcites →https://doi.org/10.1039/c5nr08219fopenalex-snapshot

Precise and reversible band gap tuning in single-layer MoSe 2 by uniaxial strain

inferredcites →https://doi.org/10.1039/c6cp08807dopenalex-snapshot

Polymorphs of two dimensional phosphorus and arsenic: insight from an evolutionary search

inferredcites →https://doi.org/10.1039/c6tc04692dopenalex-snapshot

Widely tunable and anisotropic charge carrier mobility in monolayer tin( ii ) selenide using biaxial strain: a first-principles study

inferredcites →https://doi.org/10.1039/c8ta08781dopenalex-snapshot

Emergence of high piezoelectricity along with robust electron mobility in Janus structures in semiconducting Group IVB dichalcogenide monolayers

inferredcites →https://doi.org/10.1039/d0nr07027kopenalex-snapshot

Group-IV(A) Janus dichalcogenide monolayers and their interfaces straddle gigantic shear and in-plane piezoelectricity

inferredcites →https://doi.org/10.1039/d0nr09146dopenalex-snapshot

Accurate electronic properties and non-linear optical response of two-dimensional MA2Z4

inferredcites →https://doi.org/10.1039/d1cp03941eopenalex-snapshot

Two-dimensional layered MSi 2 N 4 (M = Mo, W) as promising thermal management materials: a comparative study

inferredcites →https://doi.org/10.1039/d1tc01149aopenalex-snapshot

A two-dimensional MoSe 2 /MoSi 2 N 4 van der Waals heterostructure with high carrier mobility and diversified regulation of its electronic properties

inferredcites →https://doi.org/10.1039/d1tc02937aopenalex-snapshot

Performance limit of monolayer MoSi 2 N 4 transistors

inferredcites →https://doi.org/10.1063/1.4962141openalex-snapshot

Measurement of high carrier mobility in graphene in an aqueous electrolyte environment

inferredcites →https://doi.org/10.1063/1.5053795openalex-snapshot

Strain engineering in functional 2-dimensional materials

inferredcites →https://doi.org/10.1063/5.0033241openalex-snapshot

Two-dimensional van der Waals electrical contact to monolayer MoSi2N4

inferredcites →https://doi.org/10.1063/5.0044976openalex-snapshot

Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer: A first-principles calculation

inferredcites →https://doi.org/10.1063/5.0072266openalex-snapshot

Spin-valley coupling and valley splitting in the MoSi2N4/CrCl3 van der Waals heterostructure

inferredcites →https://doi.org/10.1080/03772063.2016.1243020openalex-snapshot

Effective Doping of Monolayer Phosphorene by Surface Adsorption of Atoms for Electronic and Spintronic Applications

inferredcites →https://doi.org/10.1088/0953-8984/21/39/395502openalex-snapshot

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

inferredcites →https://doi.org/10.1088/1361-6463/abdb6bopenalex-snapshot

MoSi 2 N 4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic and optical properties

inferredcites →https://doi.org/10.1088/1361-6463/ac1d13openalex-snapshot

Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi 2 X 4 ( X = N, P, As and Sb)

inferredcites →https://doi.org/10.1088/1674-4926/42/12/122002openalex-snapshot

Janus MSiGeN4 (M = Zr and Hf) monolayers derived from centrosymmetric β-MA2Z4: A first-principles study

inferredcites →https://doi.org/10.1093/nsr/nwaa190openalex-snapshot

Discovery of 2D van der Waals layered MoSi2N4 family

inferredcites →https://doi.org/10.1103/physrev.80.72openalex-snapshot

Deformation Potentials and Mobilities in Non-Polar Crystals

inferredcites →https://doi.org/10.1103/physrevapplied.10.024022openalex-snapshot

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

inferredcites →https://doi.org/10.1103/physrevapplied.16.044022openalex-snapshot

Promising Properties of a Sub-5-nm Monolayer MoSi2N4 Transistor

inferredcites →https://doi.org/10.1103/physrevb.102.235435openalex-snapshot

Valley-dependent properties of monolayer MoSi 2 N 4 , WSi 2 N 4 , and MoSi 2 As 4

inferredcites →https://doi.org/10.1103/physrevb.85.235407openalex-snapshot

Ideal strength and phonon instability in single-layer MoS 2

inferredcites →https://doi.org/10.1103/physrevb.87.235312openalex-snapshot

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS 2 from first principles

inferredcites →https://doi.org/10.1103/physrevb.93.165413openalex-snapshot

First-principles cluster expansion study of functionalization of black phosphorene via fluorination and oxidation

inferredcites →https://doi.org/10.1103/physrevb.94.235306openalex-snapshot

Mobility anisotropy of two-dimensional semiconductors

inferredcites →https://doi.org/10.1103/physrevb.97.115434openalex-snapshot

Strain-tunable charge carrier mobility of atomically thin phosphorus allotropes

inferredcites →https://doi.org/10.1107/s0021889811038970openalex-snapshot

VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data

inferredcites →https://doi.org/10.1109/led.2007.891668openalex-snapshot

A Graphene Field-Effect Device

inferredcites →https://doi.org/10.1126/science.aah4698openalex-snapshot

MoS 2 transistors with 1-nanometer gate lengths

inferredcites →https://doi.org/10.1126/science.abb7023openalex-snapshot

Chemical vapor deposition of layered two-dimensional MoSi 2 N 4 materials

inferredcites →https://doi.org/10.5772/61316openalex-snapshot

Review of Graphene Technology and Its Applications for Electronic Devices

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4646055openalex-extracted

inferred← citeshttps://doi.org/10.1002/adom.202202622openalex-snapshot

Exciton Self‐Trapping Effect in MoSi2N4 for Modulating Nonlinear Optical Process

inferred← citeshttps://doi.org/10.1002/jcc.27474openalex-snapshot

The high electron mobility for spin‐down channel of two‐dimensional spin‐polarized half‐metallic ferromagnetic EuSi2N4 monolayer

inferred← citeshttps://doi.org/10.1007/s11467-024-1431-6openalex-snapshot

First-principles investigation of two-dimensional iron molybdenum nitride: A double transition-metal cousin of MoSi2N4(MoN) monolayer with distinctive electronic and topological properties

inferred← citeshttps://doi.org/10.1007/s44442-026-00109-2openalex-snapshot

Electronic structure engineering and photocatalytic potential of MA2N4 two-dimensional materials: a first-principles perspective

inferred← citeshttps://doi.org/10.1016/j.apsusc.2023.157020openalex-snapshot

First-principles prediction of two-dimensional Janus XMInZ 2 (X = Cl, Br, I; M = Mg, Ca; and Z = S, Se, and Te) with promising spintronic and photocatalytic properties

inferred← citeshttps://doi.org/10.1016/j.apsusc.2023.157256openalex-snapshot

Two-dimensional T ′ -phase MA 2 N 4 (M=Mo/W, A=Si/Ge) nanosheets: First-principles insights into the structural stability, electronic property and catalytic performance for hydrogen evolution reaction

inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159495openalex-snapshot

Extremly high stabilities and mobilities in monolayer XYO2 (X=Li, Na; Y=Al, Ga, In) for solar cells

inferred← citeshttps://doi.org/10.1016/j.ijhydene.2025.152007openalex-snapshot

XMAY2/GaZ (X = Cl, Br; M = Mg, Ca; A = Ga, In; Y = S, Se; Z = As, P, Sb) heterojunctions: Z-scheme structures for enhanced photocatalytic hydrogen evolution

inferred← citeshttps://doi.org/10.1016/j.rinp.2023.106935openalex-snapshot

Promising optoelectronic properties and potential infrared photodetection applications of two-dimensional monolayer PdTeI2

inferred← citeshttps://doi.org/10.1016/j.surfin.2024.105118openalex-snapshot

Strain tunable electronic, optical, and photovoltaic properties of monolayer β2-SrX2Y4 (X = Al, Ga, In, Y = S, Se)

inferred← citeshttps://doi.org/10.1016/j.surfin.2025.107464openalex-snapshot

A CrSi2N4 gas sensor for NO detection in the moist air with ultrahigh sensitivity, selectivity, strain-sensitivity, and reversibility

inferred← citeshttps://doi.org/10.1021/acs.jpcc.3c02819openalex-snapshot

Manipulation of Valley and Spin Properties in Two-Dimensional Janus WSiGeZ 4 (Z = N, P, As) through Symmetry Control

inferred← citeshttps://doi.org/10.1021/acs.jpcc.3c08285openalex-snapshot

Nontrivial Topology in Monolayer MA2Z4 (M = Ti, Zr, or Hf; A = Si or Ge; and Z = N, P, As, Sb, or Bi)

inferred← citeshttps://doi.org/10.1021/acs.jpclett.2c03108openalex-snapshot

Coupled Spin-Valley, Rashba Effect, and Hidden Spin Polarization in WSi2N4 Family

inferred← citeshttps://doi.org/10.1021/acs.jpclett.4c03062openalex-snapshot

High-Throughput Computing of Janus Chalcogenides as Photocatalysts and Piezoelectric Materials for Overall Water Splitting

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Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe2P4–Metal Contacts

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Janus ScYCBr2 MXene as a Promising Thermoelectric Material

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An Ab Initio Study of the Piezoelectric and Optical Properties of CrCSiX2Y2 Monolayers: Implications for Multifunctional Solar-Blind Ultraviolet Detector

inferred← citeshttps://doi.org/10.1038/s41524-025-01672-9openalex-snapshot

Enhanced long-range quadrupole effects in 2D MSi2N4: impacts on electric and thermal transport

inferred← citeshttps://doi.org/10.1038/s41578-025-00832-zopenalex-snapshot

The van der Waals MoSi2N4 materials family

inferred← citeshttps://doi.org/10.1038/s41598-024-74256-0openalex-snapshot

First-principles prediction of high carrier mobility for β-phase MX2N4 (M = Mo, W; X = Si, Ge) monolayers

inferred← citeshttps://doi.org/10.1039/d2ra05265bopenalex-snapshot

First-principles study on the structural properties of 2D MXene SnSiGeN 4 and its electronic properties under the effects of strain and an external electric field

inferred← citeshttps://doi.org/10.1039/d3cp04877bopenalex-snapshot

Modulating the electronic properties and band alignments of the arsenene/MoSi 2 N 4 van der Waals heterostructure via applying strain and electric field

inferred← citeshttps://doi.org/10.1039/d3nj00769copenalex-snapshot

Electronic, optical, and transport properties of single-layer ZrTeS 4 : a DFT study

inferred← citeshttps://doi.org/10.1039/d4nj00204kopenalex-snapshot

Computational study of two-dimensional SnGe 2 N 4 as a promising photocatalyst for the oxygen evolution reaction

inferred← citeshttps://doi.org/10.1039/d5ta00391aopenalex-snapshot

Insight into the orbital origins of anisotropic carrier mobility in TaS 2 X 2 (X = Cl, Br, I) monolayers with highly efficient photocatalytic hydrogen evolution

inferred← citeshttps://doi.org/10.1039/d6cp00075dopenalex-snapshot

Tunable optoelectronic properties and high power conversion efficiency of the AsP/MoSi 2 P 4 van der Waals heterostructure

inferred← citeshttps://doi.org/10.1039/d6cp01686copenalex-snapshot

First-principles prediction of β-phase SnA 2 N 4 (A = Si; Ge) monolayers: outstanding mechanical anisotropy and high electron mobility for FET devices

inferred← citeshttps://doi.org/10.1103/89np-kn9bopenalex-snapshot

Multifunctional VN 2 B 2 S 2 monolayer: A promising two-dimensional material for spintronic and optoelectronic applications

inferred← citeshttps://doi.org/10.1103/physrevapplied.19.064058openalex-snapshot

Designing Power-Efficient Transistors Using Narrow-Bandwidth Materials from the MA2Z4 ( M=Mo, Cr, Zr, Ti, Hf ; A=Si, Ge ; Z=N, P, As ) Monolayer Series

inferred← citeshttps://doi.org/10.1103/physrevb.108.205427openalex-snapshot

Monolayer ThSi2N4 : An indirect-gap semiconductor with ultra-high carrier mobility

inferred← citeshttps://doi.org/10.1103/physrevb.111.l140416openalex-snapshot

Anomalous valley Hall effect in monolayer chromium-based triple- Q magnets

inferred← citeshttps://doi.org/10.1103/physrevmaterials.7.114003openalex-snapshot

Probing the uniaxial strain-dependent valley drift and Berry curvature in monolayer MoSi 2 N 4

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Stable distorted T phase of M Si 2 N 4 ( M = Ru and Os ) monolayers: First-principles insights into structural, vibrational, mechanical, electronic, and optical properties

inferred← citeshttps://doi.org/10.1103/z6gq-xv4mopenalex-snapshot

Exploring the application of Janus Mo Si 2 N 2 P 2 monolayers in nanodevices and phototransistors

inferred← citeshttps://doi.org/10.2139/ssrn.7576911openalex-snapshot

MGe₂N₄ (M = Cr, Mo, W) for H₂, H₂S, and H₂CO Sensing and Hydrogen Storage: A DFT Study

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