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Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

https://doi.org/10.1103/physrevapplied.10.024022

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Graphene‐Contacted Ultrashort Channel Monolayer MoS 2 Transistors

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Performance Upper Limit of sub‐10 nm Monolayer MoS 2 Transistors

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Carbon nanotube, graphene, nanowire, and molecule‐based electron and spin transport phenomena using the nonequilibrium Green's function method at the level of first principles theory

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Carbon nanotube electronics: recent advances

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Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

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Electronic Transport in Mesoscopic Systems

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Monolayer Phosphorene–Metal Contacts

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Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

inferredcites →https://doi.org/10.1021/acs.nanolett.6b00154openalex-snapshot

Multipurpose Black-Phosphorus/hBN Heterostructures

inferredcites →https://doi.org/10.1021/acs.nanolett.6b03999openalex-snapshot

MoS 2 Field-Effect Transistor with Sub-10 nm Channel Length

inferredcites →https://doi.org/10.1021/acs.nanolett.6b04576openalex-snapshot

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

inferredcites →https://doi.org/10.1021/acs.nanolett.7b00514openalex-snapshot

Aberration-Corrected Electron Beam Lithography at the One Nanometer Length Scale

inferredcites →https://doi.org/10.1021/acsami.6b14699openalex-snapshot

Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?

inferredcites →https://doi.org/10.1021/acsnano.5b04036openalex-snapshot

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors

inferredcites →https://doi.org/10.1021/ja045900kopenalex-snapshot

Miniature Organic Transistors with Carbon Nanotubes as Quasi-One-Dimensional Electrodes

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Functionalized Metallic Single-Walled Carbon Nanotubes as a High-Performance Single-Molecule Organic Field Effect Transistor: An ab Initio Study

inferredcites →https://doi.org/10.1021/nl5025535openalex-snapshot

Tunable Transport Gap in Phosphorene

inferredcites →https://doi.org/10.1021/nn501226zopenalex-snapshot

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

inferredcites →https://doi.org/10.1021/nn502553mopenalex-snapshot

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

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The road to carbon nanotube transistors

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Phosphorene: from theory to applications

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High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

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Black phosphorus field-effect transistors

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Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

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Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

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Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass

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An atlas of two-dimensional materials

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inferredcites →https://doi.org/10.1039/c7cp04570kopenalex-snapshot

Interfacial properties of borophene contacts with two-dimensional semiconductors

inferredcites →https://doi.org/10.1039/c7mh00543aopenalex-snapshot

Recent advances in black phosphorus-based photonics, electronics, sensors and energy devices

inferredcites →https://doi.org/10.1039/c7nr03941gopenalex-snapshot

Black phosphorus transistors with van der Waals-type electrical contacts

inferredcites →https://doi.org/10.1103/physrevb.13.5188openalex-snapshot

Special points for Brillouin-zone integrations

inferredcites →https://doi.org/10.1103/physrevb.59.11936openalex-snapshot

General Green’s-function formalism for transport calculations with spd Hamiltonians and giant magnetoresistance in Co- and Ni-based magnetic multilayers

inferredcites →https://doi.org/10.1103/physrevb.65.165401openalex-snapshot

Density-functional method for nonequilibrium electron transport

inferredcites →https://doi.org/10.1103/physrevb.90.075434openalex-snapshot

Tunable optical properties of multilayer black phosphorus thin films

inferredcites →https://doi.org/10.1103/physrevb.91.045433openalex-snapshot

Native point defects in few-layer phosphorene

inferredcites →https://doi.org/10.1103/physrevb.96.155410openalex-snapshot

Renormalization of the quasiparticle band gap in doped two-dimensional materials from many-body calculations

inferredcites →https://doi.org/10.1103/physrevlett.114.063001openalex-snapshot

Carrier Plasmon Induced Nonlinear Band Gap Renormalization in Two-Dimensional Semiconductors

inferredcites →https://doi.org/10.1103/physrevlett.77.3865openalex-snapshot

Generalized Gradient Approximation Made Simple

inferredcites →https://doi.org/10.1109/jxcdc.2015.2418033openalex-snapshot

Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits

inferredcites →https://doi.org/10.1109/led.2014.2333368openalex-snapshot

Performance Limits Projection of Black Phosphorous Field-Effect Transistors

inferredcites →https://doi.org/10.1109/led.2015.2456835openalex-snapshot

Scaling Limit of Bilayer Phosphorene FETs

inferredcites →https://doi.org/10.1109/ted.2013.2284591openalex-snapshot

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

inferredcites →https://doi.org/10.1109/ted.2014.2353213openalex-snapshot

Ballistic Transport in Monolayer Black Phosphorus Transistors

inferredcites →https://doi.org/10.1109/ted.2015.2443039openalex-snapshot

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

inferredcites →https://doi.org/10.1126/sciadv.1600069openalex-snapshot

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inferredcites →https://doi.org/10.1126/science.aah4698openalex-snapshot

MoS 2 transistors with 1-nanometer gate lengths

inferredcites →https://doi.org/10.1126/science.aaj1628openalex-snapshot

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

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inferred← citeshttps://doi.org/10.1021/acsanm.2c03803openalex-snapshot

Prediction of Semiconducting 2D Nanofilms of Janus WSi2P2As2 for Applications in Sub-5 nm Field-Effect Transistors

inferred← citeshttps://doi.org/10.1021/acsanm.3c00727openalex-snapshot

Sub-5 nm Gate Length Selenium Nanowire Transistors: Implications for Nanoelectronics

inferred← citeshttps://doi.org/10.1021/acsanm.4c03718openalex-snapshot

First-Principles Investigation of Janus MgZnXY (X, Y = O, S, Se, Te; X ≠ Y) Monolayers for Short-Channel Field Effect Transistor

inferred← citeshttps://doi.org/10.1021/acsanm.5c01418openalex-snapshot

Monolayer WS2 Sub-5 nm Transistor for Future Technology Nodes: A Theoretical Study

inferred← citeshttps://doi.org/10.1021/acsanm.9b00290openalex-snapshot

2D/2D Electrical Contacts in the Monolayer WSe 2 Transistors: A First-Principles Study

inferred← citeshttps://doi.org/10.1021/acsmaterialslett.1c00259openalex-snapshot

Semiconducting Silicene: A Two-Dimensional Silicon Allotrope with Hybrid Honeycomb-Kagome Lattice

inferred← citeshttps://doi.org/10.1021/acsmaterialslett.4c00296openalex-snapshot

Suppressing Thermal Tail by Dirac States and High Density of States in Two-Dimensional Ag2S toward Low-Power Electronics

inferred← citeshttps://doi.org/10.1021/acsomega.5c09965openalex-snapshot

Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study

inferred← citeshttps://doi.org/10.1021/acsomega.5c10358openalex-snapshot

A First-Principles Study of Monolayer B 4 Cl 4 : Structural Stability, Anisotropic Electronic Properties, and Ballistic Transport Projections in Sub-5 nm MOSFETs

inferred← citeshttps://doi.org/10.1038/s41524-021-00513-9openalex-snapshot

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

inferred← citeshttps://doi.org/10.1038/s41524-025-01947-1openalex-snapshot

Investigating contact-limited scaling in sub-15-nm TMD FETs from first-principles

inferred← citeshttps://doi.org/10.1038/s41699-022-00361-1openalex-snapshot

High-performance junction-free field-effect transistor based on blue phosphorene

inferred← citeshttps://doi.org/10.1039/c8nr08852gopenalex-snapshot

High-performance sub-10 nm monolayer Bi 2 O 2 Se transistors

inferred← citeshttps://doi.org/10.1039/c8tc05863fopenalex-snapshot

A sub-10 nm monolayer ReS 2 transistor for low-power applications

inferred← citeshttps://doi.org/10.1039/c9nr07590aopenalex-snapshot

Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides

inferred← citeshttps://doi.org/10.1039/c9nr07684kopenalex-snapshot

Electronic structure and transport properties of 2D RhTeCl: a NEGF-DFT study

inferred← citeshttps://doi.org/10.1039/d0cp00058bopenalex-snapshot

First-principles simulation of monolayer hydrogen passivated Bi 2 O 2 S 2 –metal interfaces

inferred← citeshttps://doi.org/10.1039/d0nr01838dopenalex-snapshot

DFT coupled with NEGF study of the electronic properties and ballistic transport performances of 2D SbSiTe 3

inferred← citeshttps://doi.org/10.1039/d0nr02170aopenalex-snapshot

Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

inferred← citeshttps://doi.org/10.1039/d0nr04129gopenalex-snapshot

High-performance monolayer Na 3 Sb shrinking transistors: a DFT-NEGF study

inferred← citeshttps://doi.org/10.1039/d0nr09094hopenalex-snapshot

Can ultra-thin Si FinFETs work well in the sub-10 nm gate-length region?

inferred← citeshttps://doi.org/10.1039/d0ra01218aopenalex-snapshot

Theoretical study of a p–n homojunction SiGe field-effect transistor via covalent functionalization

inferred← citeshttps://doi.org/10.1039/d1nr02221kopenalex-snapshot

Phase transition and topological transistors based on monolayer Na 3 Bi nanoribbons

inferred← citeshttps://doi.org/10.1039/d1qm00629kopenalex-snapshot

Novel synthesis, properties and applications of emerging group VA two-dimensional monoelemental materials (2D-Xenes)

inferred← citeshttps://doi.org/10.1039/d1tc02937aopenalex-snapshot

Performance limit of monolayer MoSi 2 N 4 transistors

inferred← citeshttps://doi.org/10.1039/d1tc03814aopenalex-snapshot

Device performance and strain effect of sub-5 nm monolayer InP transistors

inferred← citeshttps://doi.org/10.1039/d2cp00086eopenalex-snapshot

Quantum transport of short-gate MOSFETs based on monolayer MoSi 2 N 4

inferred← citeshttps://doi.org/10.1039/d2cp03427aopenalex-snapshot

Performance improvement in monolayered SnS 2 double-gate field-effect transistors via point defect engineering

inferred← citeshttps://doi.org/10.1039/d2cp05132jopenalex-snapshot

One dimensional MOSFETs for sub-5 nm high-performance applications: a case of Sb 2 Se 3 nanowires

inferred← citeshttps://doi.org/10.1039/d2na00093hopenalex-snapshot

Improving performance of monolayer arsenene tunnel field-effect transistors by defects

inferred← citeshttps://doi.org/10.1039/d2nr02382bopenalex-snapshot

Large and anisotropic carrier mobility in monolayers of the MA 2 Z 4 series (M = Cr, Mo, W; A = Si, Ge; and Z = N, P)

inferred← citeshttps://doi.org/10.1039/d2nr04840jopenalex-snapshot

Promising ultra-short channel transistors based on OM 2 S (M = Ga, In) monolayers for high performance and low power consumption

inferred← citeshttps://doi.org/10.1039/d3cp05327jopenalex-snapshot

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs

inferred← citeshttps://doi.org/10.1039/d3nr00899aopenalex-snapshot

Indium doping-assisted monolayer Ga 2 O 3 exfoliation for performance-enhanced MOSFETs

inferred← citeshttps://doi.org/10.1039/d3nr03974aopenalex-snapshot

The device performance limit of in-plane monolayer VTe 2 /WTe 2 heterojunction-based field-effect transistors

inferred← citeshttps://doi.org/10.1039/d3nr04514eopenalex-snapshot

Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe 2 /MoSe 2 /NbSe 2 heterojunction

inferred← citeshttps://doi.org/10.1039/d3tc00517hopenalex-snapshot

Performance limit of one-dimensional SbSI nanowire transistors

inferred← citeshttps://doi.org/10.1039/d4cp03789hopenalex-snapshot

Ballistic transport in sub-10 nm monolayer InAs transistors for high-performance applications

inferred← citeshttps://doi.org/10.1039/d4mh00662copenalex-snapshot

A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal–semiconductor phase transition

inferred← citeshttps://doi.org/10.1039/d4nr04304aopenalex-snapshot

Quantum transport simulations of monolayer β-AgI: a prospective nanochannel material in sub-1 nm gate-length MOSFETs

inferred← citeshttps://doi.org/10.1039/d4nr04600eopenalex-snapshot

First-principles study of anisotropic planar 2D BC 2 N for sub-5 nm high-performance p-type transistors

inferred← citeshttps://doi.org/10.1039/d5cp02433aopenalex-snapshot

5 nm Gate length field-effect transistors based on monolayer α-In 2 X 3 (X = S, Se, Te)

inferred← citeshttps://doi.org/10.1039/d5cp03889hopenalex-snapshot

Field-effect transistors based on an In 2 Se 3 -graphene vdW ferroelectric heterojunction for high-performance and low-power logic applications

inferred← citeshttps://doi.org/10.1039/d5nr00264hopenalex-snapshot

Sub-5 nm monolayer KMgX (X = P, As, Sb)-based homogeneous CMOS devices for high-performance applications

inferred← citeshttps://doi.org/10.1039/d5nr04763copenalex-snapshot

Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs

inferred← citeshttps://doi.org/10.1039/d5tc01623aopenalex-snapshot

Single-layer HfN 2 : symmetric scaling behavior in CMOS transistors

inferred← citeshttps://doi.org/10.1039/d5tc04303dopenalex-snapshot

Symmetric transport in sub-5-nm monolayer Sn 2 S 2 -based homogeneous CMOS devices

inferred← citeshttps://doi.org/10.1039/d5tc04367kopenalex-snapshot

Charge-transfer doping in C 3 N 2 vdWHs endows sub-5 nm FETs with near-Boltzmann switching and ultrahigh on-state current

inferred← citeshttps://doi.org/10.1039/d6ra00943copenalex-snapshot

Quantum transport insights into layer-dependent behavior of Sub-1 nm MoS 2 transistors for advanced scaling

inferred← citeshttps://doi.org/10.1039/d6tc01098aopenalex-snapshot

High-performance p-type MOSFETs based on Janus MoSTe for sub-5 nm CMOS scaling

inferred← citeshttps://doi.org/10.1063/1.5109057openalex-snapshot

Phonon limited anisotropic quantum transport in phosphorene field effect transistors

inferred← citeshttps://doi.org/10.1063/5.0019215openalex-snapshot

Phosphorene pnp junctions as perfect electron waveguides

inferred← citeshttps://doi.org/10.1063/5.0029712openalex-snapshot

How good are 2D transistors? An application-specific benchmarking study

inferred← citeshttps://doi.org/10.1063/5.0061876openalex-snapshot

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

inferred← citeshttps://doi.org/10.1063/5.0070904openalex-snapshot

Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications

inferred← citeshttps://doi.org/10.1063/5.0177388openalex-snapshot

Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering

inferred← citeshttps://doi.org/10.1063/5.0247918openalex-snapshot

Ultrathin insulators as gate dielectric for blue phosphorene field-effect transistors

inferred← citeshttps://doi.org/10.1088/1361-6463/ab866fopenalex-snapshot

Tunable transport characteristics of armchair phosphorene nanoribbon-based three-terminal devices by the channel length and gate dielectrics

inferred← citeshttps://doi.org/10.1088/1361-6463/ad8ed7openalex-snapshot

Band gap engineering and photoelectronic properties of novel pentagonal materials penta-XN2 (X = Ni, Pt): a first principle calculations

inferred← citeshttps://doi.org/10.1088/1361-648x/ad00f5openalex-snapshot

Quantum transport simulations of sub-5 nm bilayer Ga2O3 transistor for high-performance applications

inferred← citeshttps://doi.org/10.1088/1361-648x/ad12ffopenalex-snapshot

The interfacial properties of 2D metal-monolayer blue phosphorene heterojunctions and transport properties of their field-effect transistors

inferred← citeshttps://doi.org/10.1088/1361-6528/aae0cbopenalex-snapshot

Sub-5 nm monolayer black phosphorene tunneling transistors

inferred← citeshttps://doi.org/10.1088/1361-6528/ae308copenalex-snapshot

Tunable anisotropic electronic transport in bilayer phosphorene Y-junctions

inferred← citeshttps://doi.org/10.1088/1361-6641/ab2cd8openalex-snapshot

Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene

inferred← citeshttps://doi.org/10.1088/1361-6641/ad7639openalex-snapshot

The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET

inferred← citeshttps://doi.org/10.1088/1674-4926/40/6/062003openalex-snapshot

Bilayer tellurene–metal interfaces

inferred← citeshttps://doi.org/10.1088/1674-4926/41/8/082006openalex-snapshot

First-principle study of puckered arsenene MOSFET

inferred← citeshttps://doi.org/10.1103/74cd-586jopenalex-snapshot

High-performance nanodevices based on WGe 2 N 4 monolayer

inferred← citeshttps://doi.org/10.1103/krhd-vz9qopenalex-snapshot

High-throughput computational screening of two-dimensional oxides for high-performance electronic and optoelectronic devices

inferred← citeshttps://doi.org/10.1103/physrevapplied.11.064031openalex-snapshot

Unveiling the Electric-Current-Limiting and Photodetection Effect in Two-Dimensional Hydrogenated Borophene

inferred← citeshttps://doi.org/10.1103/physrevapplied.11.064045openalex-snapshot

Unusual Electronic Transitions in Two-dimensional Layered SnSb2Te4 Driven by Electronic State Rehybridization

inferred← citeshttps://doi.org/10.1103/physrevapplied.12.064025openalex-snapshot

Crystallographic Characterization of Black Phosphorene and its Application in Nanostructures

inferred← citeshttps://doi.org/10.1103/physrevapplied.13.044066openalex-snapshot

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

inferred← citeshttps://doi.org/10.1103/physrevapplied.14.024016openalex-snapshot

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

inferred← citeshttps://doi.org/10.1103/physrevapplied.14.044031openalex-snapshot

Ultrascaled Double-Gate Monolayer Sn S 2 MOSFETs for High-Performance and Low-Power Applications

inferred← citeshttps://doi.org/10.1103/physrevapplied.16.044022openalex-snapshot

Promising Properties of a Sub-5-nm Monolayer MoSi2N4 Transistor

inferred← citeshttps://doi.org/10.1103/physrevapplied.17.064010openalex-snapshot

High-Performance and Low-Power Transistors Based on Anisotropic Monolayer β - TeO2

inferred← citeshttps://doi.org/10.1103/physrevapplied.17.064053openalex-snapshot

Dependence of Tunneling Mechanism on Two-Dimensional Material Parameters: A High-Throughput Study

inferred← citeshttps://doi.org/10.1103/physrevapplied.18.034033openalex-snapshot

Electronic Transport Properties and Nanodevice Designs for Monolayer Mo Si 2 P 4

inferred← citeshttps://doi.org/10.1103/physrevapplied.18.044012openalex-snapshot

Sub-5-nm Monolayer GaSe MOSFET with Ultralow Subthreshold Swing and High On -State Current: Dielectric Layer Effects

inferred← citeshttps://doi.org/10.1103/physrevapplied.18.054089openalex-snapshot

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation

inferred← citeshttps://doi.org/10.1103/physrevapplied.20.034002openalex-snapshot

Sub-5-nm Monolayer Boron Pnictide MOSFETs for n - and p -Type High-Performance Applications

inferred← citeshttps://doi.org/10.1103/physrevapplied.20.064044openalex-snapshot

Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices

inferred← citeshttps://doi.org/10.1103/physrevapplied.21.054016openalex-snapshot

Theoretical dissection of the electronic anisotropy and quantum transport of ultrascaled halogenated borophene MOSFETs

inferred← citeshttps://doi.org/10.1103/physrevapplied.23.044002openalex-snapshot

Symmetric high-performance transport in n - and p -type Hf Sn S 3 nanowire gate-all-around transistors toward sub-5-nm electronics

inferred← citeshttps://doi.org/10.1103/physrevb.101.075416openalex-snapshot

Evaluating the exfoliation of two-dimensional materials with a Green's function surface model

inferred← citeshttps://doi.org/10.1103/physrevmaterials.3.054002openalex-snapshot

Negative Poisson's ratio in puckered two-dimensional materials

inferred← citeshttps://doi.org/10.1103/pp8h-r8wkopenalex-snapshot

Monolayer M N H 2 ( M , N = C, Si, Ge): Enabling sub-5-nm MOSFETs compatible with silicon-based manufacturing

inferred← citeshttps://doi.org/10.1103/r23v-kgmwopenalex-snapshot

Scaling behavior in a sub-5-nm n -type monolayer Ge Te transistor

inferred← citeshttps://doi.org/10.1103/vqsp-81ccopenalex-snapshot

Efficient ohmic contact in monolayer Cu 2 Se field-effect transistors

inferred← citeshttps://doi.org/10.1109/led.2020.3000052openalex-snapshot

Ballistic Transport in High-Performance and Low-Power Sub-5 nm Two-Dimensional ZrNBr MOSFETs

inferred← citeshttps://doi.org/10.1109/led.2020.3041657openalex-snapshot

Uncovering the Anisotropic Electronic Structure of 2D Group VA-VA Monolayers for Quantum Transport

inferred← citeshttps://doi.org/10.1109/led.2021.3055287openalex-snapshot

Impact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-Effect Transistors

inferred← citeshttps://doi.org/10.1109/led.2022.3179228openalex-snapshot

Mitigating Tunneling Leakage in Ultrascaled HfS2 pMOS Devices With Uniaxial Strain

inferred← citeshttps://doi.org/10.1109/ted.2021.3096178openalex-snapshot

Exploiting Fringing Fields Created by High-κGate Insulators to Enhance the Performance of Ultrascaled 2-D-Material-Based Transistors

inferred← citeshttps://doi.org/10.1109/ted.2021.3098256openalex-snapshot

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS2

inferred← citeshttps://doi.org/10.1109/ted.2021.3136497openalex-snapshot

Extending Channel Scaling Limit of p-MOSFETs Through Antimonene With Heavy Effective Mass and High Density of State

inferred← citeshttps://doi.org/10.1109/ted.2022.3169122openalex-snapshot

Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study

inferred← citeshttps://doi.org/10.1109/ted.2022.3232756openalex-snapshot

Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients

inferred← citeshttps://doi.org/10.1109/ted.2023.3261831openalex-snapshot

Di-Metal Chalcogenides: A New Family of Promising 2-D Semiconductors for High-Performance Transistors

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