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Thin film position sensitive detector based on amorphous silicon p–i–n diode

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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/0022-3093(93)91117-lopenalex-snapshot
Material properties, project design rules and performances of single and dual-axis a-Si:H large area position sensitive detectors
inferredcites →https://doi.org/10.1063/1.335343openalex-snapshot
Hydrogenated amorphous silicon position sensitive detector

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Dependence of the Strains and Residual Mechanical Stresses on the Performances Presented by a-Si:H Thin Film Position Sensors
inferred← citeshttps://doi.org/10.1002/aelm.201700362openalex-snapshot
Hybrid Perovskite‐Based Position‐Sensitive Detectors
inferred← citeshttps://doi.org/10.1002/inf2.12081openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/978-3-662-04141-3_8openalex-snapshot
Thin Film Position Sensitive Detectors: From 1D to 3D Applications
inferred← citeshttps://doi.org/10.1007/s00542-014-2346-xopenalex-snapshot
Design and implementation of novel thin film position-sensitive detectors (TFPSDs) based on photoconductive effect
inferred← citeshttps://doi.org/10.1007/s12274-022-4780-xopenalex-snapshot
Ultrasensitive broadband position-sensitive detector based on graphitic carbon nitride
inferred← citeshttps://doi.org/10.1016/0022-3093(96)00113-5openalex-snapshot
Static and dynamic resolution of 1D thin film position sensitive detector
inferred← citeshttps://doi.org/10.1016/0924-4247(95)01213-3openalex-snapshot
Static behaviour of thin-film position-sensitive detectors based on p-i-n a-Si:H devices
inferred← citeshttps://doi.org/10.1016/j.apsusc.2015.08.144openalex-snapshot
Distance-dependent lateral photovoltaic effect in a-Si:H(p)/a-Si:H(i)/c-Si(n) structure
inferred← citeshttps://doi.org/10.1016/j.carbon.2021.08.041openalex-snapshot
Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure
inferred← citeshttps://doi.org/10.1016/j.heliyon.2021.e07019openalex-snapshot
Development of solar cell for large area position detection: proof of concept
inferred← citeshttps://doi.org/10.1016/j.matlet.2015.09.090openalex-snapshot
Bias voltage-modulated lateral photovoltaic effect in indium tin oxide (ITO)/Si(n) structure
inferred← citeshttps://doi.org/10.1016/j.matlet.2016.01.039openalex-snapshot
Distance-independent lateral photovoltaic effect in a-Si:H/c-Si p–i–n structure with the aid of bias voltage
inferred← citeshttps://doi.org/10.1016/j.matlet.2016.04.149openalex-snapshot
Power-dependent lateral photovoltaic effect in a-Si:H/c-Si p-i-n structure at different temperatures
inferred← citeshttps://doi.org/10.1016/j.mseb.2017.02.001openalex-snapshot
Electrically modulated lateral photovoltage in μc-SiOx:H/a-Si:H/c-Si p-i-n structure at low temperatures
inferred← citeshttps://doi.org/10.1016/j.sna.2013.10.017openalex-snapshot
Color sensing ability of an amorphous silicon position sensitive detector array system
inferred← citeshttps://doi.org/10.1016/j.sna.2022.113911openalex-snapshot
High-Sensitivity Position-Sensitive Detectors to Low-Power Light Spots
inferred← citeshttps://doi.org/10.1016/s0022-3093(99)00926-6openalex-snapshot
New ultra-light flexible large area thin film position sensitive detector based on amorphous silicon
inferred← citeshttps://doi.org/10.1016/s0040-6090(00)01610-2openalex-snapshot
Production and characterization of large area flexible thin film position sensitive detectors
inferred← citeshttps://doi.org/10.1016/s0040-6090(98)01196-1openalex-snapshot
Role of the resistive layer on the performances of 2D a-Si:H thin film position sensitive detectors
inferred← citeshttps://doi.org/10.1016/s0924-4247(00)00446-5openalex-snapshot
Flexible large area thin film position sensitive detectors
inferred← citeshttps://doi.org/10.1016/s0924-4247(98)00012-0openalex-snapshot
New materials for large-area position-sensitive detectors
inferred← citeshttps://doi.org/10.1021/acs.nanolett.9b03368openalex-snapshot
Graphene-Based Infrared Position-Sensitive Detector for Precise Measurements and High-Speed Trajectory Tracking
inferred← citeshttps://doi.org/10.1021/acsami.1c15121openalex-snapshot
2D Position-Sensitive Hybrid-Perovskite Detectors
inferred← citeshttps://doi.org/10.1021/acsami.4c02346openalex-snapshot
Improvement in Performance and Stability of PbS QD/IGZO Phototransistors Through the Introduction of Ga2O3 Film for Broadband Sensor Applications
inferred← citeshttps://doi.org/10.1021/acsami.7b04638openalex-snapshot
Large Lateral Photovoltage Observed in MoS 2 Thickness-Modulated ITO/MoS 2 /p-Si Heterojunctions
inferred← citeshttps://doi.org/10.1023/a:1011230630886openalex-snapshot
A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures
inferred← citeshttps://doi.org/10.1038/lsa.2017.113openalex-snapshot
Interfacial amplification for graphene-based position-sensitive-detectors
inferred← citeshttps://doi.org/10.1038/srep46377openalex-snapshot
Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions
inferred← citeshttps://doi.org/10.1063/1.1147098openalex-snapshot
Role of the collecting resistive layer on the static characteristics of a 1D a-Si:H thin film position sensitive detector
inferred← citeshttps://doi.org/10.1063/1.1147946openalex-snapshot
Analysis of front contact heterojunction in a-Si:H one-dimensional position sensitive detectors
inferred← citeshttps://doi.org/10.1063/5.0049490openalex-snapshot
The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche
inferred← citeshttps://doi.org/10.1063/5.0207986openalex-snapshot
Highly precise optical positioning through deep learning-assisted photo-thermoelectric detection
inferred← citeshttps://doi.org/10.1063/5.0263929openalex-snapshot
The lateral photovoltaic effect and its applications in light-based devices
inferred← citeshttps://doi.org/10.1080/01418639708241090openalex-snapshot
Structure, composition and electro-optical properties of n-type amorphous and microcrystalline silicon thin films
inferred← citeshttps://doi.org/10.1080/01418639708241091openalex-snapshot
Role of the deposition parameters in the uniformity of films produced by the plasma-enhanced chemical vapour deposition technique
inferred← citeshttps://doi.org/10.1080/14786430902886910openalex-snapshot
Nanostructured silicon and its application to solar cells, position sensors and thin film transistors
inferred← citeshttps://doi.org/10.1088/0022-3727/34/13/301openalex-snapshot
Sputtered a-Si:H thin-film position sensitive detectors
inferred← citeshttps://doi.org/10.1088/0022-3727/40/18/011openalex-snapshot
Large lateral photoeffect observed in metal–semiconductor junctions of CoxMnyO films and Si
inferred← citeshttps://doi.org/10.1088/1361-6463/abd433openalex-snapshot
Lateral photovoltaic effect based on novel materials and external modulations
inferred← citeshttps://doi.org/10.1088/1367-2630/10/3/033018openalex-snapshot
A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si
inferred← citeshttps://doi.org/10.1088/1464-4258/4/5/307openalex-snapshot
Wavelength response of thin-film optical position-sensitive detectors
inferred← citeshttps://doi.org/10.1088/1674-1056/25/2/027202openalex-snapshot
Infrared laser-induced fast photovoltaic effect observed in orthorhombic tin oxide film
inferred← citeshttps://doi.org/10.1088/2040-8978/13/1/015601openalex-snapshot
A high sensitivity position-sensitive detector based on Au–SiO2–Si structure
inferred← citeshttps://doi.org/10.1109/16.544385openalex-snapshot
Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si:H p-i-n diodes
inferred← citeshttps://doi.org/10.1109/jsen.2011.2164398openalex-snapshot
Amorphous Silicon Position Sensitive Detector Array for Fast 3-D Object Profiling
inferred← citeshttps://doi.org/10.1109/led.2011.2181325openalex-snapshot
Colossal Lateral Photovoltaic Effect Observed in Metal-Oxide-Semiconductor Structure of $\hbox{Ti/TiO}_{2}/\hbox{Si}$
inferred← citeshttps://doi.org/10.1109/led.2016.2594292openalex-snapshot
Voltage-Modulated Position Sensitivity and Nonlinearity in a-Si:H/c-Si p-i-n Structure by Different Connection Methods
inferred← citeshttps://doi.org/10.1109/lsens.2017.2682701openalex-snapshot
Light Sensing of a-Si:H p-i-n DiodeMechanism of Asymmetric Charge Carrier Transfer
inferred← citeshttps://doi.org/10.1109/ted.2016.2587481openalex-snapshot
Large Near-Infrared Lateral Photovoltaic Effect of ITO/Si Structure Observed at Low Temperature
inferred← citeshttps://doi.org/10.1364/oe.16.003798openalex-snapshot
The Co-film-thickness dependent lateral photoeffect in Co-SiO_2-Si metal-oxide-semiconductor structures
inferred← citeshttps://doi.org/10.1364/oe.18.009113openalex-snapshot
Infrared laser induced lateral photovoltaic effect observed in Cu_2O nanoscale film
inferred← citeshttps://doi.org/10.1364/oe.25.00a166openalex-snapshot
Lateral photovoltaic effect observed in doping-modulated GaAs/Al_03Ga_07As
inferred← citeshttps://doi.org/10.1364/oe.553808openalex-snapshot
Ultra-low-light visible–near-infrared position-sensitive detector based on femtosecond laser nitrogen-hyperdoped silicon
inferred← citeshttps://doi.org/10.1364/oe.564927openalex-snapshot
Fully transparent GaN/InGaN LED as a position sensitive detector
inferred← citeshttps://doi.org/10.1364/oe.590802openalex-snapshot
Pyroelectricity-enhanced lateral photovoltaics in pyramid-structured Si/PEDOT:PSS heterojunction for multifunctional imaging
inferred← citeshttps://doi.org/10.1364/optica.5.000027openalex-snapshot
High-performance position-sensitive detector based on graphene–silicon heterojunction
inferred← citeshttps://doi.org/10.1515/nanoph-2018-0070openalex-snapshot
Direct laser writing of vertical junctions in graphene oxide films for broad spectral position‐sensitive detectors
inferred← citeshttps://doi.org/10.1557/proc-420-171openalex-snapshot
Examination of 1-D Position Sensitive Detector Performance Through Analysis of Front Contact Heterojunction
inferred← citeshttps://doi.org/10.1557/proc-467-609openalex-snapshot
Role of The Gas Flow Parameters on The Uniformity of Films Produced by PECVD Technique
inferred← citeshttps://doi.org/10.1557/proc-507-303openalex-snapshot
Role of the Collecting Resistive Layer on the Static Characteristics of 2D a-Si:H thin Film Position Sensitive Detector
inferred← citeshttps://doi.org/10.1557/proc-609-a12.7openalex-snapshot
Large Area Flexible Amorphous Silicon Position Sensitive Detectors
inferred← citeshttps://doi.org/10.3390/nano13020322openalex-snapshot
Graphene/Ge Photoconductive Position-Sensitive Detectors Based on the Charge Injection Effect
inferred← citeshttps://doi.org/10.3390/s100908173openalex-snapshot
Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors
inferred← citeshttps://doi.org/10.3390/s101110155openalex-snapshot
Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures
inferred← citeshttps://doi.org/10.7567/apex.8.122201openalex-snapshot
Large lateral photovoltaic effect in a-Si:H/c-Si p–i–n structure with the aid of bias voltage
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