On the public citation graph
Role of the collecting resistive layer on the static characteristics of a 1D a-Si:H thin film position sensitive detector
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0022-3093(93)91117-lopenalex-snapshot
Material properties, project design rules and performances of single and dual-axis a-Si:H large area position sensitive detectors
inferredcites →https://doi.org/10.1016/0022-3093(93)91129-qopenalex-snapshot
A position detector based on the lateral photoeffect in a-Si:H/ metal (Ti,Mo) multilayers
inferredcites →https://doi.org/10.1016/0924-4247(89)80032-9openalex-snapshot
A linear high-performance PSD displacement transducer with microcontroller interfacing
inferredcites →https://doi.org/10.1016/0924-4247(92)80119-nopenalex-snapshot
a-Si:H position-sensitive detector with striped metal electrodes
inferredcites →https://doi.org/10.1063/1.1144507openalex-snapshot
Thin film position sensitive detector based on amorphous silicon p–i–n diode
inferredcites →https://doi.org/10.1063/1.1145579openalex-snapshot
Lateral photoeffect in large area one-dimensional thin-film position-sensitive detectors based in a-Si:H P-I-N devices
inferredcites →https://doi.org/10.1109/16.231576openalex-snapshot
Position dependence of the transient response of a position-sensitive detector under periodic pulsed light modulation
inferredcites →https://doi.org/10.1117/12.206874openalex-snapshot
High-detection resolution presented by large-area thin-film position-sensitive detectors
inferredcites →https://doi.org/10.1557/proc-149-631openalex-snapshot
Imaging Transfer Devices Operated by PSD Mode a-Si P-I-N Junctions
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1007/s10853-005-0569-zopenalex-snapshot
Linearity and sensitivity of MIS position sensitive detectors
inferred← citeshttps://doi.org/10.1016/j.jnoncrysol.2005.09.042openalex-snapshot
Investigation of a-Si:H 1D MIS position sensitive detectors for application in 3D sensors
inferred← citeshttps://doi.org/10.1016/j.optmat.2004.08.067openalex-snapshot
Super linear position sensitive detectors using MIS structures
inferred← citeshttps://doi.org/10.1016/j.sna.2016.09.002openalex-snapshot
Static and dynamic properties of a GaAs p-i-n position-sensitive detector (PSD)
inferred← citeshttps://doi.org/10.1016/j.sna.2022.113911openalex-snapshot
High-Sensitivity Position-Sensitive Detectors to Low-Power Light Spots
inferred← citeshttps://doi.org/10.1016/s0022-3093(01)01093-6openalex-snapshot
Performance of a-Si :C1−:H Schottky barrier and pin diodes used as position sensitive detectors
inferred← citeshttps://doi.org/10.1016/s0022-3093(01)01149-8openalex-snapshot
32 linear array position sensitive detector based on NIP and hetero a-Si:H microdevices
inferred← citeshttps://doi.org/10.1016/s0022-3093(99)00926-6openalex-snapshot
New ultra-light flexible large area thin film position sensitive detector based on amorphous silicon
inferred← citeshttps://doi.org/10.1016/s0169-4332(01)00532-3openalex-snapshot
Thin film position sensitive detectors based on pin amorphous silicon carbide structures
inferred← citeshttps://doi.org/10.1016/s0924-4247(00)00446-5openalex-snapshot
Flexible large area thin film position sensitive detectors
inferred← citeshttps://doi.org/10.1080/13642810008209782openalex-snapshot
Performances of an optical ruler based on one-dimensional hydrogenated amorphous Si position-sensitive detectors produced using different metal contacts
inferred← citeshttps://doi.org/10.1557/proc-664-a26.6openalex-snapshot
Hydrogenated Amorphous Silicon / ZnO Shottky Heterojunction for Position Sensitive Detectors
inferred← citeshttps://doi.org/10.1557/proc-862-a15.6openalex-snapshot
Effect of the Load Resistance in the Linearity and Sensitivity of MIS Position Sensitive Detectors
inferred← citeshttps://doi.org/10.7567/apex.8.122201openalex-snapshot
Large lateral photovoltaic effect in a-Si:H/c-Si p–i–n structure with the aid of bias voltage
inferred← citeshttps://doi.org/10.7567/apex.9.031301openalex-snapshot
Large lateral photovoltaic effect in µc-SiOx:H/a-Si:H/c-Si p–i–n structure
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