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Room-temperature epitaxial growth of AlN films

https://doi.org/10.1063/1.1509863
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/1521-396x(200112)188:2<497::aid-pssa497>3.0.co;2-oopenalex-snapshot
Crystal Growth of GaN on (Mn,Zn)Fe2O4 Substrates
inferredcites →https://doi.org/10.1016/s0022-0248(01)01014-4openalex-snapshot
Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE
inferredcites →https://doi.org/10.1016/s0022-0248(01)01642-6openalex-snapshot
RHEED and XPS study of GaN on Si(111) grown by pulsed laser deposition
inferredcites →https://doi.org/10.1016/s0022-0248(02)01311-8openalex-snapshot
Characteristics of InSb grown on single crystalline Mn–Zn ferrite substrates
inferredcites →https://doi.org/10.1016/s0022-0248(99)00485-6openalex-snapshot
Epitaxial growth of MnAs on single-crystalline Mn–Zn ferrite substrates
inferredcites →https://doi.org/10.1016/s0169-4332(01)00847-9openalex-snapshot
Characterization of hetero-interfaces between group III nitrides formed by PLD and various substrates
inferredcites →https://doi.org/10.1051/rphysap:01980001503076100openalex-snapshot
Caractérisation des surfaces par réflexion rasante de rayons X. Application à l'étude du polissage de quelques verres silicates
inferredcites →https://doi.org/10.1063/1.117105openalex-snapshot
Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
inferredcites →https://doi.org/10.1063/1.371971openalex-snapshot
III–nitrides: Growth, characterization, and properties
inferredcites →https://doi.org/10.1063/1.373839openalex-snapshot
Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy
inferredcites →https://doi.org/10.1063/1.96549openalex-snapshot
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
inferredcites →https://doi.org/10.1103/physrev.95.359openalex-snapshot
Surface Studies of Solids by Total Reflection of X-Rays
inferredcites →https://doi.org/10.1116/1.585897openalex-snapshot
GaN, AlN, and InN: A review
inferredcites →https://doi.org/10.1143/jjap.29.l205openalex-snapshot
Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
inferredcites →https://doi.org/10.1143/jjap.32.1528openalex-snapshot
Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
inferredcites →https://doi.org/10.1143/jjap.34.l688openalex-snapshot
Room-Temperature Epitaxial Growth of CeO2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
inferredcites →https://doi.org/10.1143/jjap.38.l854openalex-snapshot
Epitaxial Growth of InAs on Single-Crystalline Mn–Zn Ferrite Substrates
inferredcites →https://doi.org/10.1143/jjap.39.4486openalex-snapshot
X-Ray Photoelectron Spectroscopy Study of Hetero-Interface between Manganese Pnictide and Mn–Zn Ferrite
inferredcites →https://doi.org/10.3379/jmsjmag.23.685openalex-snapshot
Epitaxial growth of MnSb on single crystalline ferrite substrates

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4485856openalex-extracted
Simulation and Growth Study of Flux Rate Effects on Mnvpe Grown Aln
inferred← citeshttps://doi.org/10.1002/9781119208549.ch14openalex-snapshot
Microwave Ferrites and Applications
inferred← citeshttps://doi.org/10.1002/9783527628438.ch3openalex-snapshot
Growth and Growth Methods for Nitride Semiconductors
inferred← citeshttps://doi.org/10.1002/adfm.201705823openalex-snapshot
Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering
inferred← citeshttps://doi.org/10.1002/crat.201300002openalex-snapshot
Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition
inferred← citeshttps://doi.org/10.1002/pssa.200521226openalex-snapshot
GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers
inferred← citeshttps://doi.org/10.1002/pssa.200521231openalex-snapshot
Characteristics of single‐crystal AlN films grown on ferromagnetic metal substrates
inferred← citeshttps://doi.org/10.1002/pssr.200701138openalex-snapshot
Growth of InN films on spinel substrates by pulsed laser deposition
inferred← citeshttps://doi.org/10.1002/pssr.200802263openalex-snapshot
Room temperature growth of semipolar AlN (1$ \bar 1 $02) films on ZnO (1$ \bar 1 $02) substrates by pulsed laser deposition
inferred← citeshttps://doi.org/10.1002/pssr.200903072openalex-snapshot
Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates
inferred← citeshttps://doi.org/10.1002/pssr.201105380openalex-snapshot
X‐ray reciprocal space mapping study on semipolar InAlN films coherently grown on ZnO substrates
inferred← citeshttps://doi.org/10.1007/1-4020-2610-2_8openalex-snapshot
Thin Nitride Films Deposited by Reactive Pulsed Laser Ablation
inferred← citeshttps://doi.org/10.1007/978-981-95-3469-2_5openalex-snapshot
Large Mismatch Substrate Nitrides Quasi van der Waals Epitaxy
inferred← citeshttps://doi.org/10.1007/s00170-025-16119-0openalex-snapshot
Optical emission spectroscopy and ultrafast arc management strategy on the quality of AlN thin films using a 13.56 MHz RF generator
inferred← citeshttps://doi.org/10.1016/b978-0-444-63304-0.00008-1openalex-snapshot
Pulsed Laser Deposition (PLD)
inferred← citeshttps://doi.org/10.1016/j.diamond.2011.03.006openalex-snapshot
Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2003.08.070openalex-snapshot
Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2005.12.072openalex-snapshot
Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2006.05.006openalex-snapshot
Heteroepitaxial growth of GaN on atomically flat LiTaO3 (0001) using low-temperature AIN buffer layers
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2007.04.027openalex-snapshot
Structural properties of GaN grown on Zn-face ZnO at room temperature
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2007.11.147openalex-snapshot
Epitaxial growth of cubic AlN films on SrTiO3(100) substrates by pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2008.12.015openalex-snapshot
Characteristics of InN grown directly on Al2O3 (0001) substrates by pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2009.03.010openalex-snapshot
Growth of cubic InN films with high phase purity by pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2009.08.020openalex-snapshot
Epitaxial growth of InN films on lattice-matched EuN buffer layers
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2009.08.034openalex-snapshot
Properties of surface and interface structure of AlN/3C–SiC/Ge/Si (111) heterostructure
inferred← citeshttps://doi.org/10.1016/j.jssc.2007.06.008openalex-snapshot
Epitaxial growth of AlN films on single-crystalline Ta substrates
inferred← citeshttps://doi.org/10.1016/j.jssc.2009.01.028openalex-snapshot
Growth of group III nitride films by pulsed electron beam deposition
inferred← citeshttps://doi.org/10.1016/j.matlet.2014.10.148openalex-snapshot
Synthesis of high-quality AlN films on (La,Sr) (Al,Ta)O3 substrates by pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107843openalex-snapshot
Effect of flux rate on the growth of AlN films on sapphire by MNVPE
inferred← citeshttps://doi.org/10.1016/j.ssc.2005.08.010openalex-snapshot
Heteroepitaxial growth of gallium nitride on muscovite mica plates by pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.ssc.2005.11.015openalex-snapshot
Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4
inferred← citeshttps://doi.org/10.1016/j.ssc.2009.02.008openalex-snapshot
Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.surfrep.2015.06.001openalex-snapshot
Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices
inferred← citeshttps://doi.org/10.1016/j.tsf.2003.12.003openalex-snapshot
Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source
inferred← citeshttps://doi.org/10.1016/j.tsf.2003.12.004openalex-snapshot
Structural characterization of group III nitrides grown by pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.tsf.2003.12.006openalex-snapshot
Effect of ambient gas on pulsed laser deposition of group III nitrides
inferred← citeshttps://doi.org/10.1016/j.tsf.2007.05.070openalex-snapshot
Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.tsf.2007.08.122openalex-snapshot
Epitaxial growth of AlN on single crystal Mo substrates
inferred← citeshttps://doi.org/10.1039/b405773bopenalex-snapshot
Ligand stabilised dialkyl aluminium amides as new precursors for aluminium nitride thin films
inferred← citeshttps://doi.org/10.1063/1.1617376openalex-snapshot
Room-temperature epitaxial growth of GaN on conductive substrates
inferred← citeshttps://doi.org/10.1063/1.1618379openalex-snapshot
Experimental and theoretical investigation on the structural properties of GaN grown on sapphire
inferred← citeshttps://doi.org/10.1063/1.1775032openalex-snapshot
Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors
inferred← citeshttps://doi.org/10.1063/1.2137876openalex-snapshot
Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition
inferred← citeshttps://doi.org/10.1063/1.2186391openalex-snapshot
Epitaxial growth of AlN on single-crystal Ni(111) substrates
inferred← citeshttps://doi.org/10.1063/1.2200157openalex-snapshot
Polarity control of GaN grown on ZnO (0001¯) surfaces
inferred← citeshttps://doi.org/10.1063/1.2206883openalex-snapshot
Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition
inferred← citeshttps://doi.org/10.1063/1.2213178openalex-snapshot
Epitaxial growth of GaN on copper substrates
inferred← citeshttps://doi.org/10.1063/1.2227616openalex-snapshot
Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature
inferred← citeshttps://doi.org/10.1063/1.2354413openalex-snapshot
Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition
inferred← citeshttps://doi.org/10.1063/1.2372685openalex-snapshot
Room-temperature epitaxial growth of AlN on atomically flat MgAl2O4 substrates
inferred← citeshttps://doi.org/10.1063/1.2404588openalex-snapshot
Epitaxial growth of single-crystalline AlN films on tungsten substrates
inferred← citeshttps://doi.org/10.1063/1.2433758openalex-snapshot
Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates
inferred← citeshttps://doi.org/10.1063/1.2719167openalex-snapshot
Growth temperature dependence of structural properties of AlN films on ZnO (0001¯) substrates
inferred← citeshttps://doi.org/10.1063/1.2737928openalex-snapshot
Low temperature epitaxial growth of GaN films on LiGaO2 substrates
inferred← citeshttps://doi.org/10.1063/1.2793187openalex-snapshot
Epitaxial growth of AlN films on Rh ultraviolet mirrors
inferred← citeshttps://doi.org/10.1063/1.2795804openalex-snapshot
Epitaxial growth mechanisms of AlN on SiC substrates at room temperature
inferred← citeshttps://doi.org/10.1063/1.2809361openalex-snapshot
Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer
inferred← citeshttps://doi.org/10.1063/1.2815924openalex-snapshot
Growth of single crystalline GaN on silver mirrors
inferred← citeshttps://doi.org/10.1063/1.3651327openalex-snapshot
Schottky and charge memory effects in InN nanodomains
inferred← citeshttps://doi.org/10.1063/1.4739219openalex-snapshot
Ferrite film growth on semiconductor substrates towards microwave and millimeter wave integrated circuits
inferred← citeshttps://doi.org/10.1063/1.4903489openalex-snapshot
Low temperature epitaxy of Ge-Sb-Te films on BaF2 (111) by pulsed laser deposition
inferred← citeshttps://doi.org/10.1088/0034-4885/79/5/056501openalex-snapshot
GaN-based light-emitting diodes on various substrates: a critical review
inferred← citeshttps://doi.org/10.1088/0268-1242/21/8/007openalex-snapshot
Growth temperature dependence of structural properties for single crystalline GaN films on MgAl2O4substrates by pulsed laser deposition
inferred← citeshttps://doi.org/10.1088/2053-1591/1/1/015904openalex-snapshot
Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1103/physrevb.102.115114openalex-snapshot
Thickness dependence of electronic structures in V O 2 ultrathin films: Suppression of the cooperative Mott-Peierls transition
inferred← citeshttps://doi.org/10.1109/tasc.2005.849764openalex-snapshot
Investigations of $rm MgB_2/rm MgO$ and $rm MgB_2/rm AlN$ Heterostructures for Josephson Devices
inferred← citeshttps://doi.org/10.1116/1.1809127openalex-snapshot
InN epitaxial growths on Yttria stabilized zirconia (111) step substrates
inferred← citeshttps://doi.org/10.1116/1.2345644openalex-snapshot
Effects of low-temperature-grown buffers on pulsed-laser deposition of GaN on LiNbO3
inferred← citeshttps://doi.org/10.1134/s0018151x11030023openalex-snapshot
Spatial and emission characteristics of aluminum laser torch plasma
inferred← citeshttps://doi.org/10.1143/apex.3.021001openalex-snapshot
Layer-by-Layer Growth of InAlN Films on ZnO(000\bar1) Substrates at Room Temperature
inferred← citeshttps://doi.org/10.1143/apex.3.021003openalex-snapshot
Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition
inferred← citeshttps://doi.org/10.1143/jjap.44.343openalex-snapshot
Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
inferred← citeshttps://doi.org/10.1143/jjap.44.l1522openalex-snapshot
GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
inferred← citeshttps://doi.org/10.1143/jjap.45.5724openalex-snapshot
Characteristics of Single Crystal ZnO Annealed in a Ceramic ZnO Box and Its Application for Epitaxial Growth of GaN
inferred← citeshttps://doi.org/10.1143/jjap.45.6893openalex-snapshot
Characteristics of GaN/ZrB2 Heterointerfaces Prepared by Pulsed Laser Deposition
inferred← citeshttps://doi.org/10.1143/jjap.45.l1139openalex-snapshot
Layer-by-Layer Growth of AlN on ZnO(0001) Substrates at Room Temperature
inferred← citeshttps://doi.org/10.1143/jjap.45.l396openalex-snapshot
Characteristics of AlN/Ni(111) Heterostructures and their Application to Epitaxial Growth of GaN
inferred← citeshttps://doi.org/10.1143/jjap.45.l457openalex-snapshot
Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition
inferred← citeshttps://doi.org/10.1143/jjap.45.l611openalex-snapshot
Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures
inferred← citeshttps://doi.org/10.1143/jjap.49.060213openalex-snapshot
Structural and Optical Properties of Nonpolar AlN(1120) Films Grown on ZnO(1120) Substrates with a Room-Temperature GaN Buffer Layer
inferred← citeshttps://doi.org/10.1143/jjap.49.070202openalex-snapshot
Room-Temperature Epitaxial Growth of High-Quality m-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates
inferred← citeshttps://doi.org/10.1143/jjap.49.080202openalex-snapshot
Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
inferred← citeshttps://doi.org/10.1557/jmr.2004.0346openalex-snapshot
Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer
inferred← citeshttps://doi.org/10.4028/www.scientific.net/amr.324.213openalex-snapshot
Quantitative Evaluation of Strain in Epitaxial 2H-AlN Layers
inferred← citeshttps://doi.org/10.7567/apex.6.021003openalex-snapshot
Structural Properties ofm-Plane InAlN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers
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