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200 nm deep ultraviolet photodetectors based on AlN

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/1521-396x(200111)188:1<333::aid-pssa333>3.0.co;2-xopenalex-snapshot

High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition

inferredcites →https://doi.org/10.1002/pssc.200303518openalex-snapshot

High‐speed solar‐blind AlGaN‐based metal–semiconductor–metal photodetectors

inferredcites →https://doi.org/10.1016/s0022-0248(02)01877-8openalex-snapshot

High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer

inferredcites →https://doi.org/10.1038/nature04760openalex-snapshot

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

inferredcites →https://doi.org/10.1049/el:20001110openalex-snapshot

Solar-blind Al x Ga 1- x N-basedmetal-semiconductor-metalultraviolet photodetectors

inferredcites →https://doi.org/10.1049/el:20047915openalex-snapshot

Tunable HTS microstrip filters for microwave electronics

inferredcites →https://doi.org/10.1063/1.115597openalex-snapshot

AlGaN ultraviolet photoconductors grown on sapphire

inferredcites →https://doi.org/10.1063/1.115998openalex-snapshot

High responsitivity intrinsic photoconductors based on AlxGa1−xN

inferredcites →https://doi.org/10.1063/1.116495openalex-snapshot

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

inferredcites →https://doi.org/10.1063/1.120862openalex-snapshot

Schottky barrier photodetectors based on AlGaN

inferredcites →https://doi.org/10.1063/1.125768openalex-snapshot

Solar-blind AlGaN photodiodes with very low cutoff wavelength

inferredcites →https://doi.org/10.1063/1.1480484openalex-snapshot

Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode

inferredcites →https://doi.org/10.1063/1.1499738openalex-snapshot

Intentional control of n -type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)

inferredcites →https://doi.org/10.1063/1.1499741openalex-snapshot

Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation

inferredcites →https://doi.org/10.1063/1.1518558openalex-snapshot

Band-edge photoluminescence of AlN epilayers

inferredcites →https://doi.org/10.1063/1.1531832openalex-snapshot

Determination of the azimuthal orientational spread of GaN films by x-ray diffraction

inferredcites →https://doi.org/10.1063/1.1531835openalex-snapshot

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

inferredcites →https://doi.org/10.1063/1.1559659openalex-snapshot

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

inferredcites →https://doi.org/10.1063/1.1633019openalex-snapshot

4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

inferredcites →https://doi.org/10.1063/1.1633965openalex-snapshot

Band structure and fundamental optical transitions in wurtzite AlN

inferredcites →https://doi.org/10.1063/1.1728307openalex-snapshot

Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

inferredcites →https://doi.org/10.1063/1.1809272openalex-snapshot

Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7)

inferredcites →https://doi.org/10.1063/1.1819506openalex-snapshot

AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers

inferredcites →https://doi.org/10.1063/1.1824181openalex-snapshot

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)

inferredcites →https://doi.org/10.1063/1.1850183openalex-snapshot

Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.1879098openalex-snapshot

Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys

inferredcites →https://doi.org/10.1063/1.2186974openalex-snapshot

Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength

inferredcites →https://doi.org/10.1143/jjap.42.l628openalex-snapshot

292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base

inferredcites →https://doi.org/10.1143/jjap.43.3353openalex-snapshot

Metal–Semiconductor–Metal AlN Mid-Ultraviolet Photodetectors Grown by Magnetron Reactive Sputtering Deposition

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

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Low‐Dimensional Structure Vacuum‐Ultraviolet‐Sensitive (λ < 200 nm) Photodetector with Fast‐Response Speed Based on High‐Quality AlN Micro/Nanowire

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Hard thin films

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Bias induced cutoff redshift of photocurrent in ZnO ultraviolet photodetectors

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Stress enhanced photoelectric response in flexible AlN single-crystalline thin films

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Growth and photoluminescence studies of AlN thin films with different orientation degrees

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Recent developments of wide-bandgap semiconductor based UV sensors

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Vacuum-Ultraviolet Photon Detections

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Cross-sectional transmission electron microscopy studies for deformation behaviors of AlN thin films under Berkovich nanoindentation

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Ultraviolet detector based on TiO2 nanowire array–polymer hybrids with low dark current

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Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN

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Transmission electron microscopy investigation of AlN growth on Si(111)

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Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template

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Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth

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High-quality AlN epilayers prepared by atomic layer deposition and large-area rapid electron beam annealing

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All evaporation submicron lift-off lithography process with negative e-beam QSR-5 resist

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High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics

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Deep traps in GaN-based structures as affecting the performance of GaN devices

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AlN/GaN/AlN heterostructures grown on Si substrate by plasma-assisted MBE for MSM UV photodetector applications

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Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability

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Low temperature growth of MgGa2O4 films for deep ultraviolet photodetectors

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Microstructure analysis of c-axis oriented aluminum nitride thin films by high-resolution transmission electron microscopy

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Correlation between optoelectronic and structural properties and epilayer thickness of AlN

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Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors

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Correlation between biaxial stress and free exciton transition in AlN epilayers

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AlN avalanche photodetectors

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Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

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Valence band structure of AlN probed by photoluminescence

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193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

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Photoluminescence properties of AlN homoepilayers with different orientations

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High quality AlN grown on SiC by metal organic chemical vapor deposition

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Beryllium acceptor binding energy in AlN

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Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

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Stress and its effect on optical properties of AlN nanorods

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Photoconductivity in single AlN nanowires by subband gap excitation

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High response deep ultraviolet organic photodetector with spectrum peak focused on 280 nm

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Probing the relationship between structural and optical properties of Si-doped AlN

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Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

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Spectroscopic analysis of Eu3+ in single-crystal hexagonal phase AlN

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High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors

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Molecular beam epitaxy-grown wurtzite MgS thin films for solar-blind ultra-violet detection

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Polarity control and growth of lateral polarity structures in AlN

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Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

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Controlled response wavelength shifting in ultraviolet photodetectors based on double-layer films

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A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

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On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures

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High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector

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Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector

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Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector

inferred← citeshttps://doi.org/10.1063/5.0059744openalex-snapshot

Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures

inferred← citeshttps://doi.org/10.1063/5.0082348openalex-snapshot

The road ahead for ultrawide bandgap solar-blind UV photodetectors

inferred← citeshttps://doi.org/10.1063/5.0172734openalex-snapshot

A solar-blind vacuum-ultraviolet photodetector based on free-standing lamellar aluminum nitride single crystal

inferred← citeshttps://doi.org/10.1063/5.0206657openalex-snapshot

Solar-blind photonic integrated chips for real-time on-chip communication

inferred← citeshttps://doi.org/10.1063/5.0291492openalex-snapshot

Low-temperature high-quality epitaxial AlN films deposited by plasma-enhanced atomic layer deposition

inferred← citeshttps://doi.org/10.1063/5.0300352openalex-snapshot

Structural and optical properties of 100 mm AlN bulk single crystals

inferred← citeshttps://doi.org/10.1063/5.0305250openalex-snapshot

Impact of graded doping transition layer on structural properties of Zr-doped AlN epilayers

inferred← citeshttps://doi.org/10.1063/5.0330815openalex-snapshot

p- and n-Type doping of AlN: Current challenges, emerging solutions, and device applications

inferred← citeshttps://doi.org/10.1063/5.0351565openalex-snapshot

Temperature-dependent characteristics of quasi-vertical AlN Schottky diodes on bulk AlN substrate

inferred← citeshttps://doi.org/10.1088/0022-3727/43/46/465104openalex-snapshot

Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

inferred← citeshttps://doi.org/10.1088/0022-3727/45/28/285103openalex-snapshot

Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates

inferred← citeshttps://doi.org/10.1088/0022-3727/47/12/125303openalex-snapshot

Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy

inferred← citeshttps://doi.org/10.1088/0256-307x/27/9/096402openalex-snapshot

First-Principles Study of the γ Angle Deformation Path in the Wurtzite-to-Rocksalt Phase Transition in Aluminum Nitride

inferred← citeshttps://doi.org/10.1088/0256-307x/32/8/088504openalex-snapshot

High Responsivity Organic Ultraviolet Photodetector Based on NPB Donor and C 60 Acceptor

inferred← citeshttps://doi.org/10.1088/0268-1242/23/4/045007openalex-snapshot

Investigation of blistering kinetics in hydrogen implanted aluminium nitride

inferred← citeshttps://doi.org/10.1088/0268-1242/23/9/095021openalex-snapshot

A GaN photodetector integrated structure for wavelength characterization of ultraviolet light

inferred← citeshttps://doi.org/10.1088/0268-1242/31/2/025006openalex-snapshot

Strongly nonparabolic variation of the band gap in In x Al 1− x N with low indium content

inferred← citeshttps://doi.org/10.1088/1361-6463/abbb45openalex-snapshot

Review of polymorphous Ga 2 O 3 materials and their solar-blind photodetector applications

inferred← citeshttps://doi.org/10.1088/1361-6641/abacddopenalex-snapshot

Donor-acceptor nature of orange photoluminescence in AlN

inferred← citeshttps://doi.org/10.1088/1361-6641/abf3aaopenalex-snapshot

Zero-biased solar-blind photodetectors based on AlN/ β -Ga 2 O 3 heterojunctions

inferred← citeshttps://doi.org/10.1088/1402-4896/ac2d8aopenalex-snapshot

A Ga 2 O 3 /AlN heterojunction for self-powered solar-blind photodetection with high photo-to-dark current ratio and fast response speed

inferred← citeshttps://doi.org/10.1088/1402-4896/ad8489openalex-snapshot

Fractal analyses of AlxGa1−xN thin film surfaces on AlN at different annealing temperatures

inferred← citeshttps://doi.org/10.1088/1674-1056/22/10/100701openalex-snapshot

MEH-PPV/Alq 3 -based bulk heterojunction photodetector

inferred← citeshttps://doi.org/10.1088/1674-1056/acd3e4openalex-snapshot

High performance solar-blind deep ultraviolet photodetectors via β-phase (In0.09Ga0.91)2O3 single crystalline film

inferred← citeshttps://doi.org/10.1088/1674-4926/40/12/121801openalex-snapshot

Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

inferred← citeshttps://doi.org/10.1088/1674-4926/40/6/062004openalex-snapshot

Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations

inferred← citeshttps://doi.org/10.1088/2053-1591/aabd6aopenalex-snapshot

Pulsed laser deposited NixMg1−xO film characterization and band gap investigation

inferred← citeshttps://doi.org/10.1088/2053-1591/ab4a40openalex-snapshot

Fabrication of AlN/GaN MSM photodetector with platinum as schottky contacts

inferred← citeshttps://doi.org/10.1103/physrevb.77.205204openalex-snapshot

Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors

inferred← citeshttps://doi.org/10.1103/physrevb.82.155132openalex-snapshot

Impurity doping in SiO2 : Formation energies and defect levels from first-principles calculations

inferred← citeshttps://doi.org/10.1103/physrevlett.134.226901openalex-snapshot

Silicon Plasmonics for Enhanced Responsivity of Silicon Photodetectors in Deep-Ultraviolet Region

inferred← citeshttps://doi.org/10.1109/apscon56343.2023.10101178openalex-snapshot

An Array of Bandpass Detectors for Measuring Beam Spectral Components

inferred← citeshttps://doi.org/10.1109/iemt61324.2024.10875098openalex-snapshot

Investigating Crystallography and Thickness Distribution of Aluminium Nitride Thin Films Prepared by Magnetron Sputtering on Silicon Wafer

inferred← citeshttps://doi.org/10.1109/jqe.2021.3075543openalex-snapshot

3D-MSM AlN Deep Ultraviolet Detector

inferred← citeshttps://doi.org/10.1109/jsen.2017.2712639openalex-snapshot

Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperatures

inferred← citeshttps://doi.org/10.1109/jsen.2021.3080506openalex-snapshot

Cube-Shaped GaN UV Photodetectors Using 3D-Printed Panels for Omnidirectional Detection

inferred← citeshttps://doi.org/10.1109/jsen.2025.3557819openalex-snapshot

Sn δ-Doped α-Ga2O3-Based MSM Photodetectors and Their Applications to Optoelectronic Artificial Synapse

inferred← citeshttps://doi.org/10.1109/led.2024.3381114openalex-snapshot

MBE-Grown MgO Thin Film Vacuum Ultraviolet Photodetector With Record High Responsivity of 3.2 A/W Operating at 400 °C

inferred← citeshttps://doi.org/10.1109/led.2024.3505235openalex-snapshot

High-Sensitivity Amorphous Boron Nitride Vacuum Ultraviolet Photodetectors

inferred← citeshttps://doi.org/10.1109/lpt.2021.3103097openalex-snapshot

Development of Visible-Blind UV Photodetector Using Solution Processed Ag-ZnO Nanostructures

inferred← citeshttps://doi.org/10.1109/lpt.2026.3693070openalex-snapshot

Influence of DNA Solution on Dark and Deep-UV Response of Ga 2 O 3 /p-Si Schottky Diodes

inferred← citeshttps://doi.org/10.1109/ted.2023.3303126openalex-snapshot

AlN Thin-Film Vacuum Ultraviolet Photodetector With High Operating Temperature and High Rejection Ratio

inferred← citeshttps://doi.org/10.1109/ted.2024.3392714openalex-snapshot

Comprehensively Enhanced Performance of MISIM β-Ga₂O₃ Solar-Blind Photodetector Inserted With an Ultrathin Al₂O₃ Passivation Layer

inferred← citeshttps://doi.org/10.1109/tie.2017.2740842openalex-snapshot

A Compact Solid-State UV Flame Sensing System Based on Wide-Gap II–VI Thin Film Materials

inferred← citeshttps://doi.org/10.1109/tuffc.2011.1997openalex-snapshot

Deep-UVsensors based on SAW oscillators using low-temperature-grown AlN films on sapphires

inferred← citeshttps://doi.org/10.1116/1.3360299openalex-snapshot

Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering

inferred← citeshttps://doi.org/10.1116/1.4915124openalex-snapshot

Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

inferred← citeshttps://doi.org/10.1117/1.jpe.6.042508openalex-snapshot

Plasmonic effect–enhanced Ag nanodisk incorporated ZnO/Si metal–semiconductor–metal photodetectors

inferred← citeshttps://doi.org/10.1117/1.oe.60.5.057104openalex-snapshot

High-responsivity flexible ultraviolet photodetector via single aluminum nitride nanowire

inferred← citeshttps://doi.org/10.1117/12.2576596openalex-snapshot

Highly efficient transverse-electric-dominant ultraviolet-C emitters employing GaN multiple quantum disks in AlN nanowire matrix

inferred← citeshttps://doi.org/10.1117/12.723023openalex-snapshot

Al x Ga 1-x N focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range

inferred← citeshttps://doi.org/10.1143/apex.2.111004openalex-snapshot

Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy

inferred← citeshttps://doi.org/10.1143/jjap.46.7217openalex-snapshot

Ga 2 O 3 Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

inferred← citeshttps://doi.org/10.1149/2.0231708jssopenalex-snapshot

Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga2O3Micro-Flake

inferred← citeshttps://doi.org/10.1186/s43074-020-00022-wopenalex-snapshot

Vacuum-ultraviolet photodetectors

inferred← citeshttps://doi.org/10.1201/b11201-3openalex-snapshot

AlN

inferred← citeshttps://doi.org/10.1364/oe.18.011821openalex-snapshot

High-response ultraviolet photodetector based on N,N’-bis(naphthalen-1-yl)-N,N’-bis(phenyl)benzidine and 2-(4-tertbutylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole

inferred← citeshttps://doi.org/10.1364/ol.394338openalex-snapshot

Three-dimensional metal–semiconductor–metal AlN deep-ultraviolet detector

inferred← citeshttps://doi.org/10.1364/ol.443638openalex-snapshot

Self-powered asymmetric metal–semiconductor–metal AlN deep ultraviolet detector

inferred← citeshttps://doi.org/10.1364/ome.414330openalex-snapshot

Deep-UV hexagonal boron nitride (hBN)/BAlN distributed Bragg reflectors fabricated by RF-sputtering

inferred← citeshttps://doi.org/10.1364/ome.457545openalex-snapshot

Graphene-based deep-ultraviolet photodetectors with ultrahigh responsivity using chemical vapor deposition of hexagonal boron nitride to achieve photogating

inferred← citeshttps://doi.org/10.1364/prj.7.000098openalex-snapshot

Vacuum ultraviolet photovoltaic arrays

inferred← citeshttps://doi.org/10.1515/nanoph-2017-0015openalex-snapshot

Optical, photonic and optoelectronic properties of graphene, h‐BN and their hybrid materials

inferred← citeshttps://doi.org/10.1557/jmr.2020.315openalex-snapshot

Resistance switching behaviors of continuous-thick hBN films fabricated by radio-frequency-sputtering

inferred← citeshttps://doi.org/10.1557/proc-1202-i05-01openalex-snapshot

TEM Analysis of Microstructures of AlN/sapphire grown by MOCVD

inferred← citeshttps://doi.org/10.2478/adms-2024-0001openalex-snapshot

Structural and Optical Properties of Aluminium Nitride Thin Films Fabricated Using Pulsed Laser Deposition and DC Magnetron Sputtering on Various Substrates

inferred← citeshttps://doi.org/10.3390/cryst12060777openalex-snapshot

Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

inferred← citeshttps://doi.org/10.3390/nano12010010openalex-snapshot

Effect of Substrate and Thickness on the Photoconductivity of Nanoparticle Titanium Dioxide Thin Film Vacuum Ultraviolet Photoconductive Detector

inferred← citeshttps://doi.org/10.3390/s20143939openalex-snapshot

Simulation and Experiment for Growth of High-Quality and Large-Size AlN Seed Crystals by Spontaneous Nucleation

inferred← citeshttps://doi.org/10.3390/s22218176openalex-snapshot

Ultraviolet-C Photoresponsivity Using Fabricated TiO2 Thin Films and Transimpedance-Amplifier-Based Test Setup

inferred← citeshttps://doi.org/10.35848/1347-4065/ad52daopenalex-snapshot

In-grown and irradiation-induced Al and N vacancies in 100 keV H + implanted AlN single crystals

inferred← citeshttps://doi.org/10.35848/1347-4065/ae60d6openalex-snapshot

Achieving smooth and transferable AlN films on h-BN via in-situ dual-step preflow treatment

inferred← citeshttps://doi.org/10.3740/mrsk.2014.24.5.266openalex-snapshot

Effect of First-Stage Growth Manipulation and Polarity of SiC Substrates on AlN Epilayers Grown Using Plasma-Assisted Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.3788/fgxb20123301.0082openalex-snapshot

Effect of Trimethyl-aluminum Preflow on The Structure and Strain Properties of AlN Films

inferred← citeshttps://doi.org/10.3938/jkps.77.282openalex-snapshot

Growth of a Thick AlN Epilayer by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method

inferred← citeshttps://doi.org/10.7567/apex.7.065003openalex-snapshot

Structure and optical investigation of faceted hexagonal aluminum nitride nanotube arrays

inferred← citeshttps://doi.org/10.7567/jjap.56.01ad07openalex-snapshot

AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

inferred← citeshttps://doi.org/10.7567/jjap.56.025502openalex-snapshot

Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction

inferred← citeshttps://doi.org/10.7763/ijapm.2013.v3.210openalex-snapshot

First-Principle Studies of Phonons III-N Compound Semiconductors in Wurtzite Structure

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