On the public citation graph
Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN
0 signed · 84 inferred · view as graph
Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.
Is this your work? Sign in with ORCID and put your name on the
claims that are yours.
Reference health. See whether every reference in this work resolves to a
known work and none has been retracted — and get a dated CiteStamped
badge you can embed.
What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0022-3697(87)90153-3openalex-snapshot
The intrinsic thermal conductivity of AIN
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.06.032openalex-snapshot
Large-area AlN substrates for electronic applications: An industrial perspective
inferredcites →https://doi.org/10.1016/s0022-0248(02)01752-9openalex-snapshot
Vacancies as compensating centers in bulk GaN: doping effects
inferredcites →https://doi.org/10.1038/nature04760openalex-snapshot
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
inferredcites →https://doi.org/10.1038/nphoton.2007.293openalex-snapshot
Ultraviolet light-emitting diodes based on group three nitrides
inferredcites →https://doi.org/10.1063/1.1372163openalex-snapshot
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
inferredcites →https://doi.org/10.1063/1.1633965openalex-snapshot
Band structure and fundamental optical transitions in wurtzite AlN
inferredcites →https://doi.org/10.1063/1.1661876openalex-snapshot
Epitaxially grown AlN and its optical band gap
inferredcites →https://doi.org/10.1063/1.1943489openalex-snapshot
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
inferredcites →https://doi.org/10.1063/1.2337856openalex-snapshot
Photoluminescence studies of impurity transitions in AlGaN alloys
inferredcites →https://doi.org/10.1063/1.2397021openalex-snapshot
200 nm deep ultraviolet photodetectors based on AlN
inferredcites →https://doi.org/10.1063/1.2416050openalex-snapshot
Catalyst-seeded synthesis and field emission properties of flowerlike Si-doped AlN nanoneedle array
inferredcites →https://doi.org/10.1063/1.2747546openalex-snapshot
Ultraviolet semiconductor laser diodes on bulk AlN
inferredcites →https://doi.org/10.1063/1.3276567openalex-snapshot
The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates
inferredcites →https://doi.org/10.1063/1.3389497openalex-snapshot
Nature of deep center emissions in GaN
inferredcites →https://doi.org/10.1063/1.3430042openalex-snapshot
Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications
inferredcites →https://doi.org/10.1063/1.3517484openalex-snapshot
Major impacts of point defects and impurities on the carrier recombination dynamics in AlN
inferredcites →https://doi.org/10.1103/physrevb.55.9571openalex-snapshot
Point-defect complexes and broadband luminescence in GaN and AlN
inferredcites →https://doi.org/10.1103/physrevb.63.045205openalex-snapshot
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
inferredcites →https://doi.org/10.1103/physrevb.66.075210openalex-snapshot
Influence of hydrostatic pressure on cation vacancies in GaN, AlN, and GaAs
inferredcites →https://doi.org/10.1103/physrevb.69.035207openalex-snapshot
Diffusivity of native defects in GaN
inferredcites →https://doi.org/10.1103/physrevlett.79.3030openalex-snapshot
Observation of Native Ga Vacancies in GaN by Positron Annihilation
inferredcites →https://doi.org/10.1109/tuffc.2003.1209558openalex-snapshot
High velocity SAW using aluminum nitride film on unpolished nucleation side of free-standing CVD diamond
inferredcites →https://doi.org/10.1143/apex.3.061004openalex-snapshot
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4019058openalex-extracted
Synthesis of the Aluminum Nitride Nanowires by Al-Sn Flux Method
inferred← citeshttps://doi.org/10.1002/pssa.201700491openalex-snapshot
Vertical‐Type Blue Light Emitting Diode by Mixed‐Source Hydride Vapor Phase Epitaxy Method
inferred← citeshttps://doi.org/10.1002/pssa.202200809openalex-snapshot
A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN
inferred← citeshttps://doi.org/10.1002/pssb.201451559openalex-snapshot
On the behavior of silicon donor in conductive AlxGa1–xN (0.63 ≤ x ≤ 1)
inferred← citeshttps://doi.org/10.1002/pssb.201600338openalex-snapshot
Slow decay of a defect‐related emission band at 2.05 eV in AlN: Signatures of oxygen‐related DX states
inferred← citeshttps://doi.org/10.1002/pssb.201600714openalex-snapshot
Model for the deep defect‐related emission bands between 1.4 and 2.4 eV in AlN
inferred← citeshttps://doi.org/10.1002/pssb.202200516openalex-snapshot
Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy
inferred← citeshttps://doi.org/10.1016/b978-0-08-102053-1.00002-8openalex-snapshot
Point defects in group-III nitrides
inferred← citeshttps://doi.org/10.1016/j.actamat.2024.119678openalex-snapshot
Frequency dependence of wake-up and fatigue characteristics in ferroelectric Al0.93B0.07N thin films
inferred← citeshttps://doi.org/10.1016/j.ceramint.2021.02.263openalex-snapshot
Microstructure and luminescence properties of the high pressure high temperature sintered AlN–TiN ceramics
inferred← citeshttps://doi.org/10.1016/j.jallcom.2016.03.064openalex-snapshot
Study of optical properties of bulk GaN crystals grown by HVPE
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2016.04.030openalex-snapshot
Influence of high-temperature processing on the surface properties of bulk AlN substrates
inferred← citeshttps://doi.org/10.1016/j.jlumin.2016.05.055openalex-snapshot
Overview of band-edge and defect related luminescence in aluminum nitride
inferred← citeshttps://doi.org/10.1016/j.jlumin.2021.118082openalex-snapshot
Luminescence properties and energy transfer mechanism of Eu3+ and Tm3+ Co-doped AlN thin films
inferred← citeshttps://doi.org/10.1016/j.jmrt.2022.01.101openalex-snapshot
Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy
inferred← citeshttps://doi.org/10.1016/j.jmrt.2022.11.166openalex-snapshot
Effect of oxygen on the crystallinity and defect state of AlxGa1−xN epilayers
inferred← citeshttps://doi.org/10.1016/j.mser.2015.05.001openalex-snapshot
Deep traps in GaN-based structures as affecting the performance of GaN devices
inferred← citeshttps://doi.org/10.1016/j.mssp.2022.107002openalex-snapshot
Effects of V/Ⅲ ratio on structural, optical, and electrical properties of semi-polar high Al-content Si-doped n-AlGaN epi-layers
inferred← citeshttps://doi.org/10.1016/j.radmeas.2019.02.001openalex-snapshot
Spectrally resolved thermoluminescence in electron irradiated AlN submicrocrystals
inferred← citeshttps://doi.org/10.1016/j.radmeas.2025.107372openalex-snapshot
Scintillating structures of GaN on sapphire for hadron irradiation dosimetry
inferred← citeshttps://doi.org/10.1016/j.rinp.2019.102285openalex-snapshot
Suppression of “volcano” morphology and parasitic defect luminescence in AlGaN-based deep-UV light-emitting diode epitaxy
inferred← citeshttps://doi.org/10.1016/j.spmi.2019.03.014openalex-snapshot
Effects of Eu ions dose and annealing temperature on the structural and optical properties of Eu-implanted AlN thin films
inferred← citeshttps://doi.org/10.1021/acs.jpcc.8b11807openalex-snapshot
Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD
inferred← citeshttps://doi.org/10.1021/acsnano.5c10170openalex-snapshot
Nitrogen Vacancies Induce Fatigue in Ferroelectric Al0.93B0.07N
inferred← citeshttps://doi.org/10.1021/acsphotonics.8b00601openalex-snapshot
Broadband White-Light Emission from Alumina Nitride Bulk Single Crystals
inferred← citeshttps://doi.org/10.1021/jp412236uopenalex-snapshot
Tunable Optical and Photocatalytic Performance Promoted by Nonstoichiometric Control and Site-Selective Codoping of Trivalent Ions in NaTaO3
inferred← citeshttps://doi.org/10.1038/s41598-019-53732-yopenalex-snapshot
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
inferred← citeshttps://doi.org/10.1039/d4ta04335aopenalex-snapshot
Formation of intrinsic point defects in AlN: a study of donor and acceptor characteristics using hybrid QM/MM techniques
inferred← citeshttps://doi.org/10.1063/1.4878657openalex-snapshot
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
inferred← citeshttps://doi.org/10.1063/1.4894774openalex-snapshot
Luminescence and superradiance in electron-beam-excited AlxGa1−x N
inferred← citeshttps://doi.org/10.1063/1.4983708openalex-snapshot
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
inferred← citeshttps://doi.org/10.1063/5.0012685openalex-snapshot
Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center
inferred← citeshttps://doi.org/10.1063/5.0027743openalex-snapshot
Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis
inferred← citeshttps://doi.org/10.1063/5.0044519openalex-snapshot
Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)
inferred← citeshttps://doi.org/10.1063/5.0210143openalex-snapshot
Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition
inferred← citeshttps://doi.org/10.1063/5.0270337openalex-snapshot
Electron transport in N-polar AlGaN:Si films grown by MOVPE on annealed and sputtered AlN templates
inferred← citeshttps://doi.org/10.1063/5.0300352openalex-snapshot
Structural and optical properties of 100 mm AlN bulk single crystals
inferred← citeshttps://doi.org/10.1063/5.0331854openalex-snapshot
Polarity effects on the growth of Si-doped AlGaN epilayers on AlN
inferred← citeshttps://doi.org/10.1080/15599612.2024.2332242openalex-snapshot
The elasticity and piezoelectricity of AlN containing charged vacancies
inferred← citeshttps://doi.org/10.1088/1361-6641/abacddopenalex-snapshot
Donor-acceptor nature of orange photoluminescence in AlN
inferred← citeshttps://doi.org/10.1088/1674-1056/26/4/047308openalex-snapshot
Recent progress of ZnMgO ultraviolet photodetector
inferred← citeshttps://doi.org/10.1088/1674-4926/40/12/121801openalex-snapshot
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
inferred← citeshttps://doi.org/10.1103/2w4n-3cqyopenalex-snapshot
Local symmetry and mode-selective electron-phonon coupling of oxygen-related defects in AlN
inferred← citeshttps://doi.org/10.1103/physrevapplied.10.064027openalex-snapshot
Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1−xN -related Materials
inferred← citeshttps://doi.org/10.1109/ted.2014.2299556openalex-snapshot
Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT
inferred← citeshttps://doi.org/10.1111/jace.15370openalex-snapshot
Aluminum‐vacancy‐related dielectric relaxations in AlN ceramics
inferred← citeshttps://doi.org/10.1134/s0022476626080056openalex-snapshot
Impact of Growth Temperature During Pulsed Magnetron Sputtering on the Structure and Defects of Aluminum Nitride Films
inferred← citeshttps://doi.org/10.1149/2162-8777/adc59dopenalex-snapshot
10 MeV Proton and Neutron Damage in Lateral AlN Rectifiers
inferred← citeshttps://doi.org/10.1364/ol.555852openalex-snapshot
Oxygen and point defect-related luminescence in AlN epitaxial layers grown by MOCVD
inferred← citeshttps://doi.org/10.1364/ome.5.001598openalex-snapshot
Influence of high-temperature postgrowth annealing under different ambience on GaN quantum dots grown via Ga droplet epitaxy
inferred← citeshttps://doi.org/10.1364/ome.6.002139openalex-snapshot
Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers
inferred← citeshttps://doi.org/10.1557/s43577-025-00972-1openalex-snapshot
Physics of wurtzite ferroelectrics
inferred← citeshttps://doi.org/10.3390/cryst12040516openalex-snapshot
Synthesis of AlN Nanowires by Al-Sn Flux Method
inferred← citeshttps://doi.org/10.3390/ma16093424openalex-snapshot
Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces
inferred← citeshttps://doi.org/10.3390/mi13081233openalex-snapshot
Anomalous Photocurrent Reversal Due to Hole Traps in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
inferred← citeshttps://doi.org/10.3390/nano13061067openalex-snapshot
Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam
inferred← citeshttps://doi.org/10.3390/s19153388openalex-snapshot
Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation
inferred← citeshttps://doi.org/10.53846/goediss-6384openalex-snapshot
Untersuchungen zum Lumineszenzverhalten des Aluminiumnitrids und der Aufbau einer Kurzzeit-Lumineszenz-Spektroskopie-Apparatur
inferred← citeshttps://doi.org/10.7567/apex.6.032101openalex-snapshot
270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
inferred← citeshttps://doi.org/10.7567/jjap.56.01ad03openalex-snapshot
Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy
Editorial review for independent work. ICSAC — the Institute for Complexity
Science and Advanced Computing — runs a structured editorial panel for researchers
publishing outside journals, and publishes on CiteStamp rails. Submission is free
and goes through ORCID: icsacinstitute.org/submit.