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Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects

https://doi.org/10.1063/1.2736264
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssc.200461602openalex-snapshot
Fabrication and analysis of GaN nanorods grown by MBE
inferredcites →https://doi.org/10.1007/s11664-006-0102-4openalex-snapshot
Catalyst-free growth of GaN nanowires
inferredcites →https://doi.org/10.1016/j.jallcom.2004.05.036openalex-snapshot
Rietveld-refinement study of aluminium and gallium nitrides
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.03.035openalex-snapshot
Identification of donors, acceptors, and traps in bulk-like HVPE GaN
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.11.079openalex-snapshot
Spontaneously grown GaN and AlGaN nanowires
inferredcites →https://doi.org/10.1016/j.physb.2005.10.122openalex-snapshot
Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
inferredcites →https://doi.org/10.1016/s0022-0248(98)00193-6openalex-snapshot
Bulk and homoepitaxial GaN-growth and characterisation
inferredcites →https://doi.org/10.1016/s0925-8388(98)01019-6openalex-snapshot
Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire
inferredcites →https://doi.org/10.1021/ja993713uopenalex-snapshot
Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires
inferredcites →https://doi.org/10.1021/jp044334copenalex-snapshot
Optical and Field Emission Properties of Thin Single-Crystalline GaN Nanowires
inferredcites →https://doi.org/10.1021/nl0487774openalex-snapshot
Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics
inferredcites →https://doi.org/10.1021/nl051689eopenalex-snapshot
Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes
inferredcites →https://doi.org/10.1063/1.1600519openalex-snapshot
Band parameters for nitrogen-containing semiconductors
inferredcites →https://doi.org/10.1063/1.1660019openalex-snapshot
Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials
inferredcites →https://doi.org/10.1063/1.1753073openalex-snapshot
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
inferredcites →https://doi.org/10.1063/1.1823024openalex-snapshot
Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
inferredcites →https://doi.org/10.1063/1.1832739openalex-snapshot
Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy
inferredcites →https://doi.org/10.1063/1.1868059openalex-snapshot
Luminescence properties of defects in GaN
inferredcites →https://doi.org/10.1063/1.2115087openalex-snapshot
GaN nanowire lasers with low lasing thresholds
inferredcites →https://doi.org/10.1063/1.2206133openalex-snapshot
Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.2736266openalex-snapshot
Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects
inferredcites →https://doi.org/10.1063/1.368433openalex-snapshot
Direct comparison of the pressure-induced band-gap shifts in cubic and hexagonal GaN
inferredcites →https://doi.org/10.1063/1.368613openalex-snapshot
Local probe techniques for luminescence studies of low-dimensional semiconductor structures
inferredcites →https://doi.org/10.1063/1.371971openalex-snapshot
III–nitrides: Growth, characterization, and properties
inferredcites →https://doi.org/10.1088/0953-8984/17/43/l03openalex-snapshot
Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowires
inferredcites →https://doi.org/10.1088/0953-8984/9/1/025openalex-snapshot
Brillouin scattering study of gallium nitride: elastic stiffness constants
inferredcites →https://doi.org/10.1103/physrevb.54.17745openalex-snapshot
Strain-related phenomena in GaN thin films
inferredcites →https://doi.org/10.1103/physrevb.56.12446openalex-snapshot
Optical anisotropy of excitons in strained GaN epilayers grown along the 〈101¯0〉 direction
inferredcites →https://doi.org/10.1103/physrevb.58.6696openalex-snapshot
Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure
inferredcites →https://doi.org/10.1103/physrevb.60.4723openalex-snapshot
Reflectance and emission spectra of excitonic polaritons in GaN
inferredcites →https://doi.org/10.1103/physrevb.62.16826openalex-snapshot
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1103/physrevb.72.085218openalex-snapshot
Temperature dependence of the thermal expansion of GaN
inferredcites →https://doi.org/10.1107/s002188989500269xopenalex-snapshot
Absolute Lattice-Parameter Measurement
inferredcites →https://doi.org/10.1143/jjap.43.1264openalex-snapshot
Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN
inferredcites →https://doi.org/10.1143/jjap.43.6868openalex-snapshot
Photocurrent and Photoluminescence Characteristics of Networked GaN Nanowires
inferredcites →https://doi.org/10.1143/jjap.44.1181openalex-snapshot
High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
inferredcites →https://doi.org/10.1146/annurev.matsci.34.040203.112300openalex-snapshot
SEMICONDUCTOR NANOWIRES AND NANOTUBES
inferredcites →https://doi.org/10.1557/proc-0892-ff31-03openalex-snapshot
High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4761792openalex-extracted
Gallium Controlled Optical Emission Under In-Rich Regime in Self-Assembled Ingan Nanowires Grown on Si(111)
inferred← citeshttps://doi.org/10.1002/9781118984321.ch6openalex-snapshot
Microstructure of Group III‐N Nanowires
inferred← citeshttps://doi.org/10.1002/9781118984321.ch7openalex-snapshot
Ni Collector‐Induced Growth of GaN Nanowires on C‐Plane Sapphire by Plasma‐Assisted Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.1002/pssb.201147148openalex-snapshot
Catalyst free self‐organized grown high‐quality GaN nanorods
inferred← citeshttps://doi.org/10.1007/s11051-013-1789-9openalex-snapshot
Investigations on the role of Ni-catalyst for the VLS growth of quasi-aligned GaN nanowires by chemical vapor deposition
inferred← citeshttps://doi.org/10.1007/s11664-009-0672-zopenalex-snapshot
GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements
inferred← citeshttps://doi.org/10.1007/s12274-010-0013-9openalex-snapshot
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
inferred← citeshttps://doi.org/10.1016/j.apsusc.2011.06.138openalex-snapshot
The influence of Ga source and substrate position on the growth of low dimensional GaN wires by chemical vapour deposition
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The influence of growth temperatures on the characteristics of GaN nanowires
inferred← citeshttps://doi.org/10.1016/j.apsusc.2012.03.084openalex-snapshot
Growth and analysis of GaN nanowire on PZnO by different-gas flow
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2015.12.044openalex-snapshot
Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates
inferred← citeshttps://doi.org/10.1016/j.mseb.2012.12.009openalex-snapshot
Study of using aqueous NH3 to synthesize GaN nanowires on Si(111) by thermal chemical vapor deposition
inferred← citeshttps://doi.org/10.1016/j.mssp.2012.06.008openalex-snapshot
Fabrication of GaN nanowires on porous GaN substrate by thermal evaporation
inferred← citeshttps://doi.org/10.1016/j.mssp.2016.03.013openalex-snapshot
GaN nanowires on diamond
inferred← citeshttps://doi.org/10.1016/j.mssp.2016.09.026openalex-snapshot
Reprint of: GaN nanowires on diamond
inferred← citeshttps://doi.org/10.1016/j.physe.2012.05.014openalex-snapshot
Effect of growth temperature on gallium nitride nanostructures using HVPE technique
inferred← citeshttps://doi.org/10.1016/j.tsf.2013.08.105openalex-snapshot
Two step growth of high quality long n-GaN:Si nanowires using μ-GaN seed on Si(111) by metalorganic chemical vapor deposition
inferred← citeshttps://doi.org/10.1021/acs.cgd.5b00690openalex-snapshot
High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN
inferred← citeshttps://doi.org/10.1021/acs.nanolett.7b01196openalex-snapshot
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
inferred← citeshttps://doi.org/10.1021/acsnano.5b04158openalex-snapshot
Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect
inferred← citeshttps://doi.org/10.1021/acsnano.7b02419openalex-snapshot
Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures
inferred← citeshttps://doi.org/10.1021/nl203872qopenalex-snapshot
Self-Assembled GaN Nanowires on Diamond
inferred← citeshttps://doi.org/10.1038/s41427-025-00594-8openalex-snapshot
In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes
inferred← citeshttps://doi.org/10.1038/s41598-017-12702-yopenalex-snapshot
Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing
inferred← citeshttps://doi.org/10.1039/c3nr34245jopenalex-snapshot
Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD
inferred← citeshttps://doi.org/10.1063/1.2736266openalex-snapshot
Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects
inferred← citeshttps://doi.org/10.1063/1.2907249openalex-snapshot
Theoretical and experimental depth-resolved cathodoluminescence microanalysis of excitonic emission from ZnO epilayers
inferred← citeshttps://doi.org/10.1063/1.2980341openalex-snapshot
Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/1.3530634openalex-snapshot
Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/1.3553418openalex-snapshot
Injection-level-dependent internal quantum efficiency and lasing in low-defect GaN nanowires
inferred← citeshttps://doi.org/10.1063/1.3575323openalex-snapshot
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/1.3694674openalex-snapshot
GaN based nanorods for solid state lighting
inferred← citeshttps://doi.org/10.1063/1.4775492openalex-snapshot
Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires
inferred← citeshttps://doi.org/10.1063/1.4971967openalex-snapshot
Unraveling the strain state of GaN down to single nanowires
inferred← citeshttps://doi.org/10.1063/5.0035685openalex-snapshot
InGaN-based nanowires development for energy harvesting and conversion applications
inferred← citeshttps://doi.org/10.1088/0957-4484/20/7/075604openalex-snapshot
Highly ordered catalyst-free and mask-free GaN nanorods onr-plane sapphire
inferred← citeshttps://doi.org/10.1088/0957-4484/22/29/295714openalex-snapshot
Macro- and micro-strain in GaN nanowires on Si(111)
inferred← citeshttps://doi.org/10.1088/0957-4484/22/9/095603openalex-snapshot
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
inferred← citeshttps://doi.org/10.1088/1361-6463/aad4e6openalex-snapshot
Spatially resolved luminescence properties of non- and semi-polar InGaN quantum wells on GaN microrods
inferred← citeshttps://doi.org/10.1088/1361-6528/ab0570openalex-snapshot
Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
inferred← citeshttps://doi.org/10.1088/1367-2630/17/3/033040openalex-snapshot
Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires
inferred← citeshttps://doi.org/10.1088/1742-6596/209/1/012020openalex-snapshot
TEM characterization of catalyst- and mask-free grown GaN nanorods
inferred← citeshttps://doi.org/10.1103/physrevb.81.045302openalex-snapshot
Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
inferred← citeshttps://doi.org/10.1103/physrevb.81.045411openalex-snapshot
Photoluminescence polarization properties of single GaN nanowires containing AlxGa1−xN/GaN quantum discs
inferred← citeshttps://doi.org/10.1103/physrevb.82.045320openalex-snapshot
Unpinning the Fermi level of GaN nanowires by ultraviolet radiation
inferred← citeshttps://doi.org/10.1103/physrevb.90.205301openalex-snapshot
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors
inferred← citeshttps://doi.org/10.1109/jstqe.2010.2082504openalex-snapshot
GaN Nanowires Grown by Molecular Beam Epitaxy
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Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy
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Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
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Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene
inferred← citeshttps://doi.org/10.1117/12.878836openalex-snapshot
Cathodoluminescence spectroscopy on selectively grown GaN nanowires
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Nitrogen vacancies in GaN templates and their critical role on the luminescence efficiency of blue quantum wells
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Electron Microscope Study of Strain in InGaN Quantum Wells in GaN Nanowires
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InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications
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Gan Nanowire Growth by Thermal Evaporation Method
inferred← citeshttps://doi.org/10.70675/df0ca5fbz77b1z4f6fza188zad29aa74590eopenalex-snapshot
Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting
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