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Gallium Controlled Optical Emission Under In-Rich Regime in Self-Assembled Ingan Nanowires Grown on Si(111)

https://doi.org/10.2139/ssrn.4761792
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Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells
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Ag@SiO2-embedded InGaN/GaN nanorod array white light-emitting diode with perovskite nanocrystal films
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The fabrication of GaN/InGaN nano-pyramids photoanode and its enhanced water splitting performance
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Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers
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III-Nitride nanowire optoelectronics
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Decomposition Resilience of GaN Nanowires, Crested and Surficially Passivated by AlN
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Full-Color Single Nanowire Pixels for Projection Displays
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Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics
inferredcites →https://doi.org/10.1021/acsami.5b06473openalex-extracted
Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires
inferredcites →https://doi.org/10.1021/acsanm.2c03897openalex-extracted
InGaN/GaN Nanorod Arrays for a Hybrid Nanolaser
inferredcites →https://doi.org/10.1021/acsanm.2c04117openalex-extracted
Low-Temperature Selective Area Epitaxy of GaN Nanowires: Toward a Top-Surface Morphology Controllable, Fully Epitaxial Nanophotonic Platform
inferredcites →https://doi.org/10.1021/acsanm.9b00587openalex-extracted
Vertical GaN Nanowires and Nanoscale Light-Emitting-Diode Arrays for Lighting and Sensing Applications
inferredcites →https://doi.org/10.1021/cg501798jopenalex-extracted
Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1021/nl101027xopenalex-extracted
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1038/nmat2037openalex-extracted
Complete composition tunability of InGaN nanowires using a combinatorial approach
inferredcites →https://doi.org/10.1063/1.2736264openalex-extracted
Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects
inferredcites →https://doi.org/10.1063/1.3267151openalex-extracted
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
inferredcites →https://doi.org/10.1063/1.3644986openalex-extracted
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
inferredcites →https://doi.org/10.1063/1.4804293openalex-extracted
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
inferredcites →https://doi.org/10.1063/1.5123171openalex-extracted
Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes
inferredcites →https://doi.org/10.1063/5.0111026openalex-extracted
Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles
inferredcites →https://doi.org/10.1088/0022-3727/44/39/395102openalex-extracted
Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods
inferredcites →https://doi.org/10.1088/0022-3727/49/14/145104openalex-extracted
Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes
inferredcites →https://doi.org/10.1088/0957-4484/20/32/325605openalex-extracted
InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy
inferredcites →https://doi.org/10.1088/0957-4484/27/19/195704openalex-extracted
InGaN nanowires with high InN molar fraction: growth, structural and optical properties
inferredcites →https://doi.org/10.1088/1361-6463/ac2446openalex-extracted
Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs
inferredcites →https://doi.org/10.1088/1361-6463/ac8bdfopenalex-extracted
Optical and microstructural characterization of Micro-LED with sidewall treatment
inferredcites →https://doi.org/10.1088/1361-6528/aaf8deopenalex-extracted
Enhanced luminescence from InGaN/GaN nano-disk in a wire array caused by surface potential modulation during wet treatment
inferredcites →https://doi.org/10.1088/1361-6528/abaaddopenalex-extracted
Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime
inferredcites →https://doi.org/10.1103/physrevlett.116.027401openalex-extracted
Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations
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Growth of InGaN Films by MBE at the Growth Temperature of GaN
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