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Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

https://doi.org/10.1063/1.2838294
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.109162openalex-snapshot
Si3N4/Si/n-GaAs capacitor with minimum interface density in the 1010 eV−1 cm−2 range
inferredcites →https://doi.org/10.1063/1.111472openalex-snapshot
GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors
inferredcites →https://doi.org/10.1063/1.1590743openalex-snapshot
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
inferredcites →https://doi.org/10.1063/1.1635068openalex-snapshot
Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs
inferredcites →https://doi.org/10.1063/1.1641527openalex-snapshot
Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
inferredcites →https://doi.org/10.1063/1.1899745openalex-snapshot
Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
inferredcites →https://doi.org/10.1063/1.2216023openalex-snapshot
Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation
inferredcites →https://doi.org/10.1063/1.2396914openalex-snapshot
Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer
inferredcites →https://doi.org/10.1109/16.557709openalex-snapshot
Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
inferredcites →https://doi.org/10.1109/55.6954openalex-snapshot
Unpinned GaAs MOS capacitors and transistors
inferredcites →https://doi.org/10.1109/led.2003.812144openalex-snapshot
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
inferredcites →https://doi.org/10.1116/1.579829openalex-snapshot
Interfacial properties of metal–insulator–semiconductor capacitors on GaAs(110)

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4521664openalex-extracted
inferred← citeshttps://doi.org/10.1002/9783527646340.ch14openalex-snapshot
III–V MOSFETs with ALD High‐kGate Dielectrics
inferred← citeshttps://doi.org/10.1016/j.apsusc.2013.10.012openalex-snapshot
Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2008.11.037openalex-snapshot
Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2011.01.108openalex-snapshot
Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As
inferred← citeshttps://doi.org/10.1016/j.mee.2009.03.048openalex-snapshot
Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS
inferred← citeshttps://doi.org/10.1016/j.mee.2010.11.022openalex-snapshot
Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues
inferred← citeshttps://doi.org/10.1016/j.microrel.2010.07.009openalex-snapshot
Charge trapping and reliability characteristics of ultra-thin HfYOx films on n-GaAs substrates
inferred← citeshttps://doi.org/10.1016/j.mser.2010.12.001openalex-snapshot
Development of hafnium based high-k materials—A review
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2023.130257openalex-snapshot
Plasma Deposited Amorphous Silicon Passivation Layers on Inas Surfaces
inferred← citeshttps://doi.org/10.1016/j.surfrep.2013.01.002openalex-snapshot
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
inferred← citeshttps://doi.org/10.1016/j.susc.2011.06.008openalex-snapshot
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
inferred← citeshttps://doi.org/10.1016/j.tsf.2011.06.032openalex-snapshot
Investigation of charge trapping and breakdown characteristics of sputtered-Y2O3 on n-GaAs substrates
inferred← citeshttps://doi.org/10.1063/1.2937117openalex-snapshot
Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
inferred← citeshttps://doi.org/10.1063/1.2943186openalex-snapshot
Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric
inferred← citeshttps://doi.org/10.1063/1.3182702openalex-snapshot
Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature
inferred← citeshttps://doi.org/10.1063/1.3357434openalex-snapshot
Fluorinated HfO2 gate dielectric engineering on In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
inferred← citeshttps://doi.org/10.1063/1.3377915openalex-snapshot
Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs
inferred← citeshttps://doi.org/10.1063/1.3457388openalex-snapshot
Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
inferred← citeshttps://doi.org/10.1063/1.3481801openalex-snapshot
Effect of interfacial reactions between atomic-layer-deposited HfO2 films and n-GaAs (100) substrate using postnitridation with NH3 vapor
inferred← citeshttps://doi.org/10.1063/1.3657938openalex-snapshot
Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation
inferred← citeshttps://doi.org/10.1063/1.4793433openalex-snapshot
Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces
inferred← citeshttps://doi.org/10.1063/1.4794826openalex-snapshot
First principles study on InP (001)-(2 × 4) surface oxidation
inferred← citeshttps://doi.org/10.1063/1.4808243openalex-snapshot
Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks
inferred← citeshttps://doi.org/10.1063/1.4861177openalex-snapshot
Electronic properties of InP (001)/HfO2 (001) interface: Band offsets and oxygen dependence
inferred← citeshttps://doi.org/10.1063/5.0016979openalex-snapshot
Effect of different oxide surroundings on terahertz radiation absorption in GaAs quantum dot
inferred← citeshttps://doi.org/10.1088/2053-1583/aa636copenalex-snapshot
Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation
inferred← citeshttps://doi.org/10.1116/1.3565057openalex-snapshot
Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric
inferred← citeshttps://doi.org/10.1140/epjb/s10051-023-00602-2openalex-snapshot
Second order nonlinear optical properties of GaAs quantum dots in terahertz region
inferred← citeshttps://doi.org/10.1143/apex.3.035701openalex-snapshot
Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
inferred← citeshttps://doi.org/10.1149/1.2938728openalex-snapshot
Inversion-Type InP MOSFETs with EOT of 21 A Using Atomic Layer Deposited Al[sub 2]O[sub 3] Gate Dielectric
inferred← citeshttps://doi.org/10.1149/1.3273197openalex-snapshot
Effects of Fluorine Incorporation on the Electrical Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3] Gate Dielectric on InP Substrate
inferred← citeshttps://doi.org/10.1557/proc-1155-c06-07openalex-snapshot
Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
inferred← citeshttps://doi.org/10.35848/1347-4065/ad09f0openalex-snapshot
GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation
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