On the public citation graph

Reversible resistive switching behaviors in NiO nanowires

0 signed · 126 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/1521-4095(20020116)14:2<158::aid-adma158>3.0.co;2-wopenalex-snapshot
Nanowire Ultraviolet Photodetectors and Optical Switches
inferredcites →https://doi.org/10.1016/0038-1101(64)90131-5openalex-snapshot
Switching properties of thin Nio films
inferredcites →https://doi.org/10.1016/j.cplett.2003.09.066openalex-snapshot
Ordered nickel oxide nanowire arrays and their optical absorption properties
inferredcites →https://doi.org/10.1021/la061184jopenalex-snapshot
Electrochemical Template Synthesis of Multisegment Nanowires: Fabrication and Protein Functionalization
inferredcites →https://doi.org/10.1038/35051047openalex-snapshot
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
inferredcites →https://doi.org/10.1063/1.1831560openalex-snapshot
Reproducible resistance switching in polycrystalline NiO films
inferredcites →https://doi.org/10.1063/1.2001146openalex-snapshot
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
inferredcites →https://doi.org/10.1063/1.2204649openalex-snapshot
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
inferredcites →https://doi.org/10.1063/1.2210087openalex-snapshot
Improvement of resistive memory switching in NiO using IrO2
inferredcites →https://doi.org/10.1063/1.2392991openalex-snapshot
Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition
inferredcites →https://doi.org/10.1063/1.2813617openalex-snapshot
Observation of electric-field induced Ni filament channels in polycrystalline NiOx film
inferredcites →https://doi.org/10.1088/0957-4484/18/24/245304openalex-snapshot
Preparation of open-through anodized aluminium oxide films with a clean method
inferredcites →https://doi.org/10.1103/physrevb.77.035105openalex-snapshot
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
inferredcites →https://doi.org/10.1109/iedm.2004.1419228openalex-snapshot
Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
inferredcites →https://doi.org/10.1116/1.1953687openalex-snapshot
Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications
inferredcites →https://doi.org/10.1126/science.1062711openalex-snapshot
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
inferredcites →https://doi.org/10.1126/science.268.5216.1466openalex-snapshot
Ordered Metal Nanohole Arrays Made by a Two-Step Replication of Honeycomb Structures of Anodic Alumina
inferredcites →https://doi.org/10.1143/jjap.45.l991openalex-snapshot
Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4644348openalex-extracted
inferred← citeshttps://doi.org/10.1002/9783527667703.ch44openalex-snapshot
Nanosession: Valence Change Memories ‐ A Look Inside
inferred← citeshttps://doi.org/10.1002/9783527680870.ch23openalex-snapshot
Bottom‐Up Approaches for Resistive Switching Memories
inferred← citeshttps://doi.org/10.1002/adfm.201000498openalex-snapshot
Formation of Nickel Oxide Nanotubes with Uniform Wall Thickness by Low‐Temperature Thermal Oxidation Through Understanding the Limiting Effect of Vacancy Diffusion and the Kirkendall Phenomenon
inferred← citeshttps://doi.org/10.1002/adfm.201201008openalex-snapshot
One‐Dimensional Metal‐Oxide Nanostructures: Recent Developments in Synthesis, Characterization, and Applications
inferred← citeshttps://doi.org/10.1002/adfm.202518764openalex-snapshot
Universal Core–Shell Nanowire Memristor Platform with Quasi‐2D Filament Confinement for Scalable Neuromorphic Applications
inferred← citeshttps://doi.org/10.1002/adma.201004746openalex-snapshot
Phase‐Change Memory in Bi2Te3 Nanowires
inferred← citeshttps://doi.org/10.1002/adma.201503153openalex-snapshot
Simple, Inexpensive, and Rapid Approach to Fabricate Cross‐Shaped Memristors Using an Inorganic‐Nanowire‐Digital‐Alignment Technique and a One‐Step Reduction Process
inferred← citeshttps://doi.org/10.1002/adma.202201248openalex-snapshot
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications
inferred← citeshttps://doi.org/10.1002/aelm.201800256openalex-snapshot
Ni/NiO/HfO2 Core/Multishell Nanowire ReRAM Devices with Excellent Resistive Switching Properties
inferred← citeshttps://doi.org/10.1002/aelm.201800909openalex-snapshot
Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires
inferred← citeshttps://doi.org/10.1002/aelm.202000252openalex-snapshot
Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire
inferred← citeshttps://doi.org/10.1002/ejic.201000321openalex-snapshot
Synthesis of AuNi/NiO Nanocables by Porous AAO Template Assisted Galvanic Deposition and Subsequent Oxidation
inferred← citeshttps://doi.org/10.1002/pssa.201127391openalex-snapshot
Resistive‐switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide
inferred← citeshttps://doi.org/10.1002/smll.201101157openalex-snapshot
Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires
inferred← citeshttps://doi.org/10.1002/smll.201604306openalex-snapshot
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials
inferred← citeshttps://doi.org/10.1007/978-1-4419-9931-3_13openalex-snapshot
Metal Oxide Resistive Switching Memory
inferred← citeshttps://doi.org/10.1007/978-1-4614-9068-5_7openalex-snapshot
Redox-Based Memristive Devices
inferred← citeshttps://doi.org/10.1007/978-3-030-42424-4_3openalex-snapshot
Resistive Random Access Memory (RRAM) Technology: From Material, Device, Selector, 3D Integration to Bottom-Up Fabrication
inferred← citeshttps://doi.org/10.1007/978-3-319-31572-0_6openalex-snapshot
RRAMs with One-Dimensional and Two-Dimensional Materials
inferred← citeshttps://doi.org/10.1007/978-3-319-41981-7_5openalex-snapshot
Nanoelectronics, Circuits and Nanoprocessors
inferred← citeshttps://doi.org/10.1007/s10832-017-0095-9openalex-snapshot
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
inferred← citeshttps://doi.org/10.1007/s10854-020-05067-yopenalex-snapshot
Presence of capacitive memory in GLAD-synthesized WO3 nanowire
inferred← citeshttps://doi.org/10.1007/s11433-013-5350-8openalex-snapshot
ZnO nanorods: morphology control, optical properties, and nanodevice applications
inferred← citeshttps://doi.org/10.1007/s43207-025-00503-3openalex-snapshot
Resistive switching characteristics of NiO thin films deposited on highly oriented pyrolytic graphite substrates influenced by their thickness
inferred← citeshttps://doi.org/10.1016/b978-0-08-100164-6.00016-3openalex-snapshot
Oxide nanowires for nonvolatile memory applications
inferred← citeshttps://doi.org/10.1016/b978-0-12-819717-2.00008-4openalex-snapshot
One-dimensional materials for photoelectroactive memories and synaptic devices
inferred← citeshttps://doi.org/10.1016/b978-0-443-26554-9.00011-0openalex-snapshot
Metal oxide memristors
inferred← citeshttps://doi.org/10.1016/j.apmt.2022.101460openalex-snapshot
Effects of switching layer morphology on resistive switching behavior: A case study of electrochemically synthesized mixed-phase copper oxide memristive devices
inferred← citeshttps://doi.org/10.1016/j.apsusc.2019.04.105openalex-snapshot
Preparation of a shell nanostructure for highly selective photocatalytic oxidation of organic compounds by wrapping on NiO nanorods exposed {110} facets with ultrathin g-C3N4 nanosheets
inferred← citeshttps://doi.org/10.1016/j.mee.2012.07.035openalex-snapshot
Resistive switching characteristics of NiO/Ni nanostructure
inferred← citeshttps://doi.org/10.1016/j.microrel.2014.10.017openalex-snapshot
Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films
inferred← citeshttps://doi.org/10.1016/j.mtcomm.2023.105356openalex-snapshot
Binary metal oxide-based resistive switching memory devices: A status review
inferred← citeshttps://doi.org/10.1016/j.mtnano.2023.100449openalex-snapshot
Heterogeneous interface engineering enabling homogeneous metal halide perovskite nanowires for artificial synapses
inferred← citeshttps://doi.org/10.1016/j.physb.2015.09.001openalex-snapshot
Structure and optical properties of polycrystalline NiO films and its resistive switching behavior in Au/NiO/Pt structures
inferred← citeshttps://doi.org/10.1016/j.physe.2019.113577openalex-snapshot
Ge2Sb2Te5 nanobelts by femtosecond laser direct writing for resistive switching devices
inferred← citeshttps://doi.org/10.1016/j.sse.2016.05.019openalex-snapshot
Modeling of diffusion mechanism of conductive channel oxidation in a Pt/NiO/Pt memory switching structure
inferred← citeshttps://doi.org/10.1016/j.sse.2017.02.007openalex-snapshot
Fabrication of resistive switching memory structure using double-sided-anodized porous alumina
inferred← citeshttps://doi.org/10.1016/j.vacuum.2024.112989openalex-snapshot
Memory Device Based on a Nano-Granulars and Nano-Worms Structured Mos2 Active Layer: The Origin of Resistive Switching Characteristics
inferred← citeshttps://doi.org/10.1021/acs.cgd.7b01464openalex-snapshot
Growth Orientation Control of Co Nanowires Fabricated by Electrochemical Deposition Using Porous Alumina Templates
inferred← citeshttps://doi.org/10.1021/acsami.6b01050openalex-snapshot
Memristive Switching in Bi1–xSbx Nanowires
inferred← citeshttps://doi.org/10.1021/acsami.6b09761openalex-snapshot
Tailoring Nucleation at Two Interfaces Enables Single Crystalline NiO Nanowires via Vapor–Liquid–Solid Route
inferred← citeshttps://doi.org/10.1021/acsnano.4c10170openalex-snapshot
Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review
inferred← citeshttps://doi.org/10.1021/am502741mopenalex-snapshot
Single CuOxNanowire Memristor: Forming-Free Resistive Switching Behavior
inferred← citeshttps://doi.org/10.1021/am504354copenalex-snapshot
Nonvolatile Resistance Switching on Two-Dimensional Electron Gas
inferred← citeshttps://doi.org/10.1021/ja8089922openalex-snapshot
Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
inferred← citeshttps://doi.org/10.1021/nl102445xopenalex-snapshot
Large-Diameter Graphene Nanotubes Synthesized Using Ni Nanowire Templates
inferred← citeshttps://doi.org/10.1021/nl200707nopenalex-snapshot
Intrinsic Mechanisms of Memristive Switching
inferred← citeshttps://doi.org/10.1021/nl301855uopenalex-snapshot
Bipolar Resistive Switching of Single Gold-in-Ga2O3 Nanowire
inferred← citeshttps://doi.org/10.1021/nl9042906openalex-snapshot
Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
inferred← citeshttps://doi.org/10.1021/nn1005396openalex-snapshot
A Template and Catalyst-Free Metal-Etching-Oxidation Method to Synthesize Aligned Oxide Nanowire Arrays: NiO as an Example
inferred← citeshttps://doi.org/10.1021/nn204809aopenalex-snapshot
Resistive Switching in Single Epitaxial ZnO Nanoislands
inferred← citeshttps://doi.org/10.1038/am.2013.81openalex-snapshot
Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays
inferred← citeshttps://doi.org/10.1038/s41598-017-01354-7openalex-snapshot
Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
inferred← citeshttps://doi.org/10.1038/srep23069openalex-snapshot
Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
inferred← citeshttps://doi.org/10.1039/c3tc30462kopenalex-snapshot
Significant room temperature ferromagnetism in PAA thin films
inferred← citeshttps://doi.org/10.1039/c6nr09564jopenalex-snapshot
Resistive switching of Sn-doped In 2 O 3 /HfO 2 core–shell nanowire: geometry architecture engineering for nonvolatile memory
inferred← citeshttps://doi.org/10.1055/s-0031-1289763openalex-snapshot
An Efficient Copper-Catalyzed Three-Component Synthesis of 3-C-Linked Glycosyl Iminocoumarins
inferred← citeshttps://doi.org/10.1063/1.3078824openalex-snapshot
Role of TaON interface for CuxO resistive switching memory based on a combined model
inferred← citeshttps://doi.org/10.1063/1.3226861openalex-snapshot
Advanced optical magnetic nanostructures fabricated by anodic aluminum oxide membranes and magnetic fluids
inferred← citeshttps://doi.org/10.1063/1.3237176openalex-snapshot
Specific surface effect on transport properties of NiO/MgO heterostructured nanowires
inferred← citeshttps://doi.org/10.1063/1.3263733openalex-snapshot
Bipolar resistive switching in individual Au–NiO–Au segmented nanowires
inferred← citeshttps://doi.org/10.1063/1.3301620openalex-snapshot
Direct investigation on conducting nanofilaments in single-crystalline Ni/NiO core/shell nanodisk arrays
inferred← citeshttps://doi.org/10.1063/1.3453450openalex-snapshot
Resistive switching behaviors of ZnO nanorod layers
inferred← citeshttps://doi.org/10.1063/1.3486460openalex-snapshot
Reduction in high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping
inferred← citeshttps://doi.org/10.1063/1.3494267openalex-snapshot
Nanoscale resistive switching and filamentary conduction in NiO thin films
inferred← citeshttps://doi.org/10.1063/1.4758482openalex-snapshot
Improvement of resistive switching in NiO-based nanowires by inserting Pt layers
inferred← citeshttps://doi.org/10.1063/1.4769044openalex-snapshot
Low-power resistive switching in Au/NiO/Au nanowire arrays
inferred← citeshttps://doi.org/10.1063/1.4817838openalex-snapshot
Analog and bipolar resistive switching in pn junction of n-type ZnO nanowires on p-type Si substrate
inferred← citeshttps://doi.org/10.1063/1.4824763openalex-snapshot
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires
inferred← citeshttps://doi.org/10.1063/1.4862751openalex-snapshot
Scaling behaviors for resistive memory switching in NiO nanowire devices
inferred← citeshttps://doi.org/10.1063/1.4869457openalex-snapshot
Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3
inferred← citeshttps://doi.org/10.1063/1.4906416openalex-snapshot
Plasma enhanced multistate storage capability of single ZnO nanowire based memory
inferred← citeshttps://doi.org/10.1063/1.4962655openalex-snapshot
Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
inferred← citeshttps://doi.org/10.1063/1.5097232openalex-snapshot
White light-modulated bipolar resistive switching characteristics of Cu/MoS2 NRs/Pt MIM structure
inferred← citeshttps://doi.org/10.1063/5.0010839openalex-snapshot
Resistive switching memory effects in p-type hydrogen-treated CuO nanowire
inferred← citeshttps://doi.org/10.1063/5.0032102openalex-snapshot
Identification of LiNi and VNi acceptor levels in doped nickel oxide
inferred← citeshttps://doi.org/10.1063/5.0062811openalex-snapshot
Complementary resistive switching in core–shell nanowires
inferred← citeshttps://doi.org/10.1063/5.0232595openalex-snapshot
Parallel conducting filaments in resistive switching ZnO thin films
inferred← citeshttps://doi.org/10.1080/23746149.2021.1894234openalex-snapshot
Neuromorphic nanowire networks: principles, progress and future prospects for neuro-inspired information processing
inferred← citeshttps://doi.org/10.1088/0022-3727/46/3/035308openalex-snapshot
Bipolar resistive switching based on SrTiO3/YBa2Cu3O7 epi-layers
inferred← citeshttps://doi.org/10.1088/0022-3727/46/7/074006openalex-snapshot
Nanowire-based resistive switching memories: devices, operation and scaling
inferred← citeshttps://doi.org/10.1088/0957-4484/22/23/235606openalex-snapshot
Diameter dependence of the void formation in the oxidation of nickel nanowires
inferred← citeshttps://doi.org/10.1088/0957-4484/23/38/385707openalex-snapshot
Photo-stimulated resistive switching of ZnO nanorods
inferred← citeshttps://doi.org/10.1088/0957-4484/27/6/065303openalex-snapshot
Functional nickel-based deposits synthesized by focused beam induced processing
inferred← citeshttps://doi.org/10.1088/1361-6463/ad7a82openalex-snapshot
Brain-inspired computing with self-assembled networks of nano-objects
inferred← citeshttps://doi.org/10.1088/1361-6641/aa6124openalex-snapshot
Review of radiation effects on ReRAM devices and technology
inferred← citeshttps://doi.org/10.1088/1674-1056/ab38acopenalex-snapshot
Homogeneous and inhomogeneous magnetic oxide semiconductors*
inferred← citeshttps://doi.org/10.1088/2631-7990/ad2c61openalex-snapshot
Electrochemical anodic oxidation assisted fabrication of memristors
inferred← citeshttps://doi.org/10.1103/physrevb.80.214420openalex-snapshot
Core-shell model of the vacancy concentration and magnetic behavior for antiferromagnetic nanoparticle
inferred← citeshttps://doi.org/10.1103/physrevb.99.235201openalex-snapshot
Polaronic interacceptor hopping transport in intrinsically doped nickel oxide
inferred← citeshttps://doi.org/10.1109/inec.2010.5424992openalex-snapshot
Reversible resistive switching behaviors in NiO nanowires
inferred← citeshttps://doi.org/10.1109/ivesc.2010.5644304openalex-snapshot
Understanding the influence of vacancies diffusion in utilizing the Kirkendall phenomenon for nanotubes formation
inferred← citeshttps://doi.org/10.1109/jproc.2012.2190369openalex-snapshot
Metal–Oxide RRAM
inferred← citeshttps://doi.org/10.1109/ted.2009.2028378openalex-snapshot
Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells
inferred← citeshttps://doi.org/10.1109/ted.2011.2121914openalex-snapshot
Single-ZnO-Nanowire Memory
inferred← citeshttps://doi.org/10.1109/tmag.2021.3055338openalex-snapshot
Cylindrical Magnetic Nanowires Applications
inferred← citeshttps://doi.org/10.1134/s1063784216050248openalex-snapshot
Simulation of electroforming of the Pt/NiO/Pt switching memory structure
inferred← citeshttps://doi.org/10.1142/s1793604718500601openalex-snapshot
The resistive switching effects in BaTiO3/ZnO/BaTiO3/Carbon film
inferred← citeshttps://doi.org/10.1143/jjap.51.06ff11openalex-snapshot
Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory
inferred← citeshttps://doi.org/10.1149/1.3617442openalex-snapshot
Realization of Rectifying and Resistive Switching Behaviors of TiO2 Nanorod Arrays for Nonvolatile Memory
inferred← citeshttps://doi.org/10.1186/1556-276x-8-284openalex-snapshot
Shape-anisotropic enhanced damping in CoZr periodic arrays of nanohill structure
inferred← citeshttps://doi.org/10.1186/1556-276x-9-381openalex-snapshot
Unipolar resistive switching of ZnO-single-wire memristors
inferred← citeshttps://doi.org/10.1186/s11671-023-03775-yopenalex-snapshot
Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
inferred← citeshttps://doi.org/10.32657/10356/54664openalex-snapshot
Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications
inferred← citeshttps://doi.org/10.3390/nano13050789openalex-snapshot
Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor
inferred← citeshttps://doi.org/10.3390/nano13121879openalex-snapshot
Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications
inferred← citeshttps://doi.org/10.7567/jjap.53.024202openalex-snapshot
Resistive switching characteristics of Au/P-doped NiO/Au segmented nanowires synthesized by electrochemical deposition
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.