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https://doi.org/10.2139/ssrn.4644348

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Novel Electroforming‐Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density
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Relevant photovoltaic effect in N-doped CQDs/MoS2 (0D/2D) quantum dimensional heterostructure
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Oxygen migration induced effective magnetic and resistive switching boosted by graphene quantum dots
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Reactive in-situ formation and self-assembly of MoS2 nanoflakes in carbon tribofilms for low friction
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Microstructure control and property switching in stress-free van der Waals epitaxial VO2 films on mica
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Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
inferredcites →https://doi.org/10.1016/j.snb.2018.08.046openalex-extracted
Excellent room temperature ammonia gas sensing properties of n-MoS2/p-CuO heterojunction nanoworms
inferredcites →https://doi.org/10.1016/j.vacuum.2017.05.041openalex-extracted
Bipolar resistive switching behavior in Cu/AlN/Pt structure for ReRAM application
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Negative differential resistance effect induced by bulk and interface defect states in Pt/CeO2-x/Pt resistive memory devices
inferredcites →https://doi.org/10.1016/j.vacuum.2023.112489openalex-extracted
Centimeter-level MoS2 films with controllable number of layers by face-to-face chemical vapor deposition strategy
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Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping
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Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing
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New Two-Dimensional Niobium and Vanadium Carbides as Promising Materials for Li-Ion Batteries
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Nanoionics-based resistive switching memories
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A hardware Markov chain algorithm realized in a single device for machine learning
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Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing
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Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
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Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept
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The effect of Al–Ta2O5 topographic interface roughness on the leakage current of Ta2O5 thin films
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Reversible resistive switching behaviors in NiO nanowires
inferredcites →https://doi.org/10.1063/1.3701270openalex-extracted
Local resistive switching of Nd doped BiFeO3 thin films
inferredcites →https://doi.org/10.1063/1.4823854openalex-extracted
Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
inferredcites →https://doi.org/10.1063/1.4946006openalex-extracted
A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
inferredcites →https://doi.org/10.1063/1.5037139openalex-extracted
Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy
inferredcites →https://doi.org/10.1063/1.5045723openalex-extracted
Origin of tri-state resistive switching characteristics in SiCN thin films for high-temperature ReRAM applications
inferredcites →https://doi.org/10.1063/1.5097232openalex-extracted
White light-modulated bipolar resistive switching characteristics of Cu/MoS2 NRs/Pt MIM structure
inferredcites →https://doi.org/10.1063/5.0020085openalex-extracted
Optically triggered multilevel resistive switching characteristics of Cu/MoS2/AlN/ITO bilayer memory structure
inferredcites →https://doi.org/10.1063/5.0096679openalex-extracted
Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application
inferredcites →https://doi.org/10.1103/physrevapplied.4.064010openalex-extracted
Effect of Electrode Roughness on Electroforming in HfO2 and Defect-Induced Moderation of Electric-Field Enhancement
inferredcites →https://doi.org/10.1109/led.2018.2878953openalex-extracted
Effect of Surface Variations on the Performance of Yttria Based Memristive System
inferredcites →https://doi.org/10.1109/ted.2014.2343631openalex-extracted
Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory
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A facile approach to a silver conductive ink with high performance for macroelectronics
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Performance improvement of the resistive memory properties of InGaZnO thin films by using microwave irradiation
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