On the public citation graph
Ion implantation damage and annealing in germanium
0 signed · 148 inferred · view as graph
Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.
Is this your work? Sign in with ORCID and put your name on the
claims that are yours.
Reference health. See whether every reference in this work resolves to a
known work and none has been retracted — and get a dated CiteStamped
badge you can embed.
What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssa.2210730129openalex-snapshot
Solid-Phase-Epitaxial Growth in Ion-Implanted Silicon
inferredcites →https://doi.org/10.1007/978-1-4684-2064-7openalex-snapshot
Ion Implantation in Semiconductors and Other Materials
inferredcites →https://doi.org/10.1016/0001-6160(59)90117-8openalex-snapshot
The formation of surface pits by the condensation of vacancies
inferredcites →https://doi.org/10.1016/b978-0-12-002901-3.50009-xopenalex-snapshot
Ion Implantation in Semiconductors
inferredcites →https://doi.org/10.1063/1.325397openalex-snapshot
Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si
inferredcites →https://doi.org/10.1063/1.329209openalex-snapshot
Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetry
inferredcites →https://doi.org/10.1063/1.93480openalex-snapshot
Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization
inferredcites →https://doi.org/10.1063/1.93643openalex-snapshot
Characterization of damage in ion implanted Ge
inferredcites →https://doi.org/10.1080/00337577108231012openalex-snapshot
Nucleation of damage centres during ion implantation of silicon
inferredcites →https://doi.org/10.1080/00337577108242027openalex-snapshot
Review of radiation effects in germanium†
inferredcites →https://doi.org/10.1080/00337577208234700openalex-snapshot
Amorphization of germanium crystals during ion bombardment
inferredcites →https://doi.org/10.1080/00337577608240825openalex-snapshot
Amorphization of silicon by ion implantation: Homogeneous or heterogeneous nucleation?
inferredcites →https://doi.org/10.1080/00337577708233073openalex-snapshot
Molecular and atomic damage in germanium
inferredcites →https://doi.org/10.1080/00337578008243062openalex-snapshot
Atom location in complex lattices: Pb in α-Al2O3
inferredcites →https://doi.org/10.1088/0022-3719/14/23/011openalex-snapshot
Radiation damage, its recovery and platinum lattice location in Pb-bombarded MgO
inferredcites →https://doi.org/10.1103/physrev.161.698openalex-snapshot
Irradiation Damage in n -Type Germanium at 4.2°K
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4732032openalex-extracted
Enabling Tailored Nanoporous Germanium by Quantifying the Evolution of Structural Properties During Self-Irradiation
inferred← citeshttps://doi.org/10.1002/ppsc.202100154openalex-snapshot
Nanostructuring Germanium Nanowires by In Situ TEM Ion Irradiation
inferred← citeshttps://doi.org/10.1002/pssa.202400124openalex-snapshot
Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium
inferred← citeshttps://doi.org/10.1002/pssa.202500878openalex-snapshot
Operando Structural Rearrangement of Self‐Ion‐Implanted Germanium Films Enables High‐Rate Cycling in Lithium‐Ion Batteries
inferred← citeshttps://doi.org/10.1002/pssa.2210840150openalex-snapshot
Electron microscope and electron diffraction studies of amorphization phenomena in Ge implanted with Te ions
inferred← citeshttps://doi.org/10.1002/pssa.2210940147openalex-snapshot
Effect of Heavy Ion Implantation and Laser Annealing on the Structural Properties of Germanium
inferred← citeshttps://doi.org/10.1007/978-3-319-03131-6_4openalex-snapshot
Superconducting Gallium Implanted Germanium
inferred← citeshttps://doi.org/10.1007/978-3-319-33561-2_10openalex-snapshot
Swift Heavy Ion Irradiation of Amorphous Semiconductors
inferred← citeshttps://doi.org/10.1007/978-3-540-85614-6_5openalex-snapshot
Process-Induced Defects in Germanium
inferred← citeshttps://doi.org/10.1007/978-981-16-4480-1_64-1openalex-snapshot
Ion Beam Implantation Technology for Production of Thin Nanoporous Ge Layers Suited for Li-Ion Batteries
inferred← citeshttps://doi.org/10.1007/978-981-95-2947-6_64openalex-snapshot
Ion Beam Implantation Technology for Production of Thin Nanoporous Ge Layers Suited for Li-Ion Batteries
inferred← citeshttps://doi.org/10.1007/s00339-010-6123-0openalex-snapshot
Ion implantation damage and crystalline-amorphous transition in Ge
inferred← citeshttps://doi.org/10.1007/s00339-013-7911-0openalex-snapshot
From holes to sponge at irradiated Ge surfaces with increasing ion energy—an effect of defect kinetics?
inferred← citeshttps://doi.org/10.1007/s10665-024-10361-3openalex-snapshot
Interfacial phase-change and geometry modify nanoscale pattern formation in irradiated thin films
inferred← citeshttps://doi.org/10.1016/0022-3697(87)90018-7openalex-snapshot
Rutherford backscattering studies of surface density reduction in ion-implanted and excimer-laser-annealed Ge
inferred← citeshttps://doi.org/10.1016/0025-5416(85)90267-8openalex-snapshot
Chapter 2 ion-beam- and laser-induced surface modifications
inferred← citeshttps://doi.org/10.1016/0168-583x(86)90395-2openalex-snapshot
Intermetallic compound formation of Ge-Ni and Ge-Al-Ni systems by furnace annealing and ion beam intermixing
inferred← citeshttps://doi.org/10.1016/b978-0-444-63304-0.00007-xopenalex-snapshot
Solid-Phase Epitaxy
inferred← citeshttps://doi.org/10.1016/j.apsusc.2016.09.134openalex-snapshot
Optimal process parameters for phosphorus spin-on-doping of germanium
inferred← citeshttps://doi.org/10.1016/j.apsusc.2017.03.153openalex-snapshot
Optical and structural characterization of Ge clusters embedded in ZrO2
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.160171openalex-snapshot
Enabling tailored nanoporous germanium by quantifying the evolution of structural properties during self-irradiation
inferred← citeshttps://doi.org/10.1016/j.apsusc.2025.163946openalex-snapshot
Ex-situ incorporation of Al in Ge by sputter deposition and pulsed laser melting: a new approach to fabricate hyper-doped Ge:Al alloys
inferred← citeshttps://doi.org/10.1016/j.jpowsour.2012.09.056openalex-snapshot
Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries
inferred← citeshttps://doi.org/10.1016/j.matlet.2013.01.017openalex-snapshot
Influence of microstructure on voids nucleation in nanoporous Ge
inferred← citeshttps://doi.org/10.1016/j.mee.2016.10.002openalex-snapshot
High performance Ge ultra-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10nm technology applications
inferred← citeshttps://doi.org/10.1016/j.micron.2004.03.004openalex-snapshot
The application of FIB milling for specimen preparation from crystalline germanium
inferred← citeshttps://doi.org/10.1016/j.mssp.2006.08.015openalex-snapshot
Amorphization kinetics of germanium under ion implantation
inferred← citeshttps://doi.org/10.1016/j.mssp.2016.10.049openalex-snapshot
Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys
inferred← citeshttps://doi.org/10.1016/j.mssp.2018.05.037openalex-snapshot
Towards a direct band gap group IV Ge-based material
inferred← citeshttps://doi.org/10.1016/j.mssp.2022.107062openalex-snapshot
Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry
inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109877openalex-snapshot
Influence of Al co-implantation on Ga distribution in p-type Ge
inferred← citeshttps://doi.org/10.1016/j.nimb.2007.01.044openalex-snapshot
Magnetic response of Mn-doped amorphous porous Ge fabricated by ion-implantation
inferred← citeshttps://doi.org/10.1016/j.nimb.2009.06.024openalex-snapshot
Computer simulation of radiation-induced nanostructure formation in amorphous materials
inferred← citeshttps://doi.org/10.1016/j.nimb.2010.10.009openalex-snapshot
Self-implantation energy and dose effects on Ge solid-phase epitaxial growth
inferred← citeshttps://doi.org/10.1016/j.nimb.2011.01.009openalex-snapshot
Etch-free formation of porous silicon by high-energy ion irradiation
inferred← citeshttps://doi.org/10.1016/j.nimb.2011.08.027openalex-snapshot
Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams
inferred← citeshttps://doi.org/10.1016/j.nimb.2013.11.003openalex-snapshot
Porous structure formation in ion irradiated germanium
inferred← citeshttps://doi.org/10.1016/j.nimb.2015.07.069openalex-snapshot
Formation of germanium oxide microcrystals on the surface of Te-implanted Ge
inferred← citeshttps://doi.org/10.1016/j.nimb.2023.05.068openalex-snapshot
Plasmonic Au nanoparticles by ion implantation
inferred← citeshttps://doi.org/10.1016/j.optcom.2020.126052openalex-snapshot
Optical reflectance of germanium surface modified by implanted silver ions
inferred← citeshttps://doi.org/10.1016/j.physb.2017.08.007openalex-snapshot
Room temperature ferromagnetism in low dose ion implanted counter-doped Ge:Mn, As
inferred← citeshttps://doi.org/10.1016/j.surfin.2021.101390openalex-snapshot
A highly controllable doping technique via interdiffusion between epitaxial germanium layers and GaAs
inferred← citeshttps://doi.org/10.1016/j.susc.2006.11.075openalex-snapshot
Surface morphology of Mn+ implanted Ge(100): A systematic investigation as a function of the implantation substrate temperature
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.09.138openalex-snapshot
Honeycomb voids due to ion implantation in germanium
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.09.145openalex-snapshot
Hydrogen in amorphous Si and Ge during solid phase epitaxy
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.09.162openalex-snapshot
Amorphization, recrystallization and end of range defects in germanium
inferred← citeshttps://doi.org/10.1016/j.tsf.2011.03.040openalex-snapshot
Insights for void formation in ion-implanted Ge
inferred← citeshttps://doi.org/10.1016/j.vacuum.2021.110060openalex-snapshot
Incoherent-light pulse annealing of nanoporous germanium layers formed by ion implantation
inferred← citeshttps://doi.org/10.1016/j.vacuum.2021.110552openalex-snapshot
Formation of nanoporous Ge layers by ion implantation at different temperatures of c-Ge substrate
inferred← citeshttps://doi.org/10.1016/j.vacuum.2023.112123openalex-snapshot
Ion beam flux dependence of nanoporous structure formation induced by FIB in germanium
inferred← citeshttps://doi.org/10.1016/j.vacuum.2026.115455openalex-snapshot
Basic conceptual scenarios for changes of the surface germanium substrate level during ion irradiation
inferred← citeshttps://doi.org/10.1016/s0040-6090(97)00596-8openalex-snapshot
A study of ion-bombarded nanostructures on germanium surfaces by scanning probe microscopy
inferred← citeshttps://doi.org/10.1016/s0168-583x(00)00597-8openalex-snapshot
Self-ion-induced swelling of germanium
inferred← citeshttps://doi.org/10.1016/s0168-583x(96)00568-xopenalex-snapshot
Void formation in Ge induced by high energy heavy ion irradiation
inferred← citeshttps://doi.org/10.1016/s0168-583x(98)00842-8openalex-snapshot
Ion beam synthesized cobalt germanide alloy by metal vapor vacuum arc implantation
inferred← citeshttps://doi.org/10.1017/s1431927607070018openalex-snapshot
High-Quality Sample Preparation by Low kV FIB Thinning for Analytical TEM Measurements
inferred← citeshttps://doi.org/10.1039/c7cp04855fopenalex-snapshot
Nanoporous amorphous Ge–Si alloys – unraveling the physics behind ion beam induced morphogenesis
inferred← citeshttps://doi.org/10.1063/1.102009openalex-snapshot
Radiation-induced formation of cavities in amorphous germanium
inferred← citeshttps://doi.org/10.1063/1.1427135openalex-snapshot
Structural and magnetic properties of Fe–Ge layer produced by Fe ion-implantation into germanium
inferred← citeshttps://doi.org/10.1063/1.1812819openalex-snapshot
Interface modification in Co∕Ge bilayer using swift heavy ions
inferred← citeshttps://doi.org/10.1063/1.3041653openalex-snapshot
Amorphization kinetics of germanium during ion implantation
inferred← citeshttps://doi.org/10.1063/1.3091289openalex-snapshot
B activation and clustering in ion-implanted Ge
inferred← citeshttps://doi.org/10.1063/1.3159031openalex-snapshot
Ga-implantation in Ge: Electrical activation and clustering
inferred← citeshttps://doi.org/10.1063/1.335416openalex-snapshot
Effect of annealing on the optical properties of ion-implanted Ge
inferred← citeshttps://doi.org/10.1063/1.336639openalex-snapshot
Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfaces
inferred← citeshttps://doi.org/10.1063/1.3372757openalex-snapshot
Nanostructuring in Ge by self-ion implantation
inferred← citeshttps://doi.org/10.1063/1.340464openalex-snapshot
Low-temperature annealing of As-implanted Ge
inferred← citeshttps://doi.org/10.1063/1.3520671openalex-snapshot
High-level incorporation of antimony in germanium by laser annealing
inferred← citeshttps://doi.org/10.1063/1.368634openalex-snapshot
Effect of composition and annealing on structural defects in high-dose arsenic-implanted Si1−xGex alloys
inferred← citeshttps://doi.org/10.1063/1.4725427openalex-snapshot
Nanoporosity induced by ion implantation in deposited amorphous Ge thin films
inferred← citeshttps://doi.org/10.1063/1.4755886openalex-snapshot
Role of nucleation sites on the formation of nanoporous Ge
inferred← citeshttps://doi.org/10.1063/1.4942995openalex-snapshot
Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys
inferred← citeshttps://doi.org/10.1063/1.4948960openalex-snapshot
Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
inferred← citeshttps://doi.org/10.1063/1.4961620openalex-snapshot
Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
inferred← citeshttps://doi.org/10.1063/1.4969051openalex-snapshot
The influence of capping layers on pore formation in Ge during ion implantation
inferred← citeshttps://doi.org/10.1063/1.4978592openalex-snapshot
Morphology of ion irradiation induced nano-porous structures in Ge and Si1−xGex alloys
inferred← citeshttps://doi.org/10.1063/1.95302openalex-snapshot
Formation of titanium silicides by fast radiative processing
inferred← citeshttps://doi.org/10.1063/1.95719openalex-snapshot
Low-temperature ion beam mixing of Pt and Si markers in Ge
inferred← citeshttps://doi.org/10.1063/5.0077219openalex-snapshot
Unprecedented severe atomic redistribution in germanium induced by MeV self-irradiation
inferred← citeshttps://doi.org/10.1063/5.0134467openalex-snapshot
Atomic scale defect formation and phase transformation in Si implanted β -Ga2O3
inferred← citeshttps://doi.org/10.1063/5.0141319openalex-snapshot
Ion irradiation-induced nano pore/fiber formation and areal-vacancy distribution in semiconductor materials
inferred← citeshttps://doi.org/10.1063/5.0213637openalex-snapshot
Impact of post-ion implantation annealing on Se-hyperdoped Ge
inferred← citeshttps://doi.org/10.1063/5.0220639openalex-snapshot
Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
inferred← citeshttps://doi.org/10.1080/01418619108225344openalex-snapshot
Amorphization, morphological instability and crystallization of Krypton ion irradiated germanium
inferred← citeshttps://doi.org/10.1080/0950830310001639020openalex-snapshot
Elastic instability in Ge1-xSixalloys under heavy-ion irradiation
inferred← citeshttps://doi.org/10.1080/10408349108055023openalex-snapshot
Depth Profiling in Thin Dielectric Films
inferred← citeshttps://doi.org/10.1088/0034-4885/49/5/001openalex-snapshot
Materials modification with ion beams
inferred← citeshttps://doi.org/10.1088/0957-4484/22/10/105304openalex-snapshot
Low energy focused ion beam milling of silicon and germanium nanostructures
inferred← citeshttps://doi.org/10.1088/0957-4484/23/39/395604openalex-snapshot
Nanoporous Ge electrode as a template for nano-sized ( < 5 nm) Au aggregates
inferred← citeshttps://doi.org/10.1088/1361-648x/ac75a3openalex-snapshot
Swelling as a stabilizing mechanism in irradiated thin films: II. Effect of swelling rate
inferred← citeshttps://doi.org/10.1088/1361-648x/acd31bopenalex-snapshot
Swelling as a stabilizing mechanism in irradiated thin films: III. Effect on critical angle in a composite model
inferred← citeshttps://doi.org/10.1088/1361-6641/ac9a67openalex-snapshot
Electrical transport properties in Ge hyperdoped with Te
inferred← citeshttps://doi.org/10.1088/1367-2630/9/9/325openalex-snapshot
Mechanisms of stress generation during bombardment of Ge with keV ions: experiments and molecular dynamics simulations
inferred← citeshttps://doi.org/10.1103/physrevb.71.134102openalex-snapshot
Ion-irradiation-induced stresses and swelling in amorphous Ge thin films
inferred← citeshttps://doi.org/10.1103/physrevb.77.214109openalex-snapshot
Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium
inferred← citeshttps://doi.org/10.1103/physrevb.83.054113openalex-snapshot
Influence of electronic energy deposition on the structural modification of swift heavy-ion-irradiated amorphous germanium layers
inferred← citeshttps://doi.org/10.1103/physrevb.83.134426openalex-snapshot
Room-temperature ferromagnetism in Mn-implanted amorphous Ge
inferred← citeshttps://doi.org/10.1103/physrevb.83.224106openalex-snapshot
Void formation in amorphous germanium due to high electronic energy deposition
inferred← citeshttps://doi.org/10.1103/physrevb.84.104108openalex-snapshot
Structural modifications of low-energy heavy-ion irradiated germanium
inferred← citeshttps://doi.org/10.1109/essder.2004.1356521openalex-snapshot
Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line
inferred← citeshttps://doi.org/10.1109/led.2019.2931404openalex-snapshot
Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
inferred← citeshttps://doi.org/10.1109/nanotech.2018.8653561openalex-snapshot
Development of nanostructured Ge1-xSnx alloy using ion beam techniques for band gap engineering
inferred← citeshttps://doi.org/10.1116/1.2151904openalex-snapshot
Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge
inferred← citeshttps://doi.org/10.1116/1.589414openalex-snapshot
Ion implanted nanostructures on Ge(111) surfaces observed by atomic force microscopy
inferred← citeshttps://doi.org/10.1134/1.1797477openalex-snapshot
Interfaces and roughness in a multilayer silicon structure
inferred← citeshttps://doi.org/10.1134/s1027451025701551openalex-snapshot
Formation of Nanoporous Germanium Layers by Irradiation with Indium Ions
inferred← citeshttps://doi.org/10.1134/s1063783412070141openalex-snapshot
Effect of temperature conditions of ion implantation on percolation ferromagnetism in Ge0.98Mn0.02 thin films
inferred← citeshttps://doi.org/10.1134/s2635167623600761openalex-snapshot
Modification of the Surface of Germanium and the Formation of a Porous Layer During Implantation with Indium Ions
inferred← citeshttps://doi.org/10.1143/apex.5.035201openalex-snapshot
Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.1149/1.2162469openalex-snapshot
Shallow Junction Ion Implantation in Ge and Associated Defect Control
inferred← citeshttps://doi.org/10.1149/1.3274801openalex-snapshot
Gallium Implantation and Diffusion in Crystalline Germanium
inferred← citeshttps://doi.org/10.1209/epl/i2005-10257-1openalex-snapshot
Fluence effect on ion-implanted As diffusion in relaxed SiGe
inferred← citeshttps://doi.org/10.1364/ao.30.003210openalex-snapshot
Roughness measurements of Si and Al by variable angle spectroscopic ellipsometry
inferred← citeshttps://doi.org/10.1557/jmr.2009.0287openalex-snapshot
Formation of GaSb core-shell nanofibers by a thermally induced phase decomposition process
inferred← citeshttps://doi.org/10.1557/jmr.2013.24openalex-snapshot
Nanostructured germanium prepared via ion beam modification
inferred← citeshttps://doi.org/10.1557/opl.2011.1210openalex-snapshot
Multi-Ion Beam Lithography and Processing Studies
inferred← citeshttps://doi.org/10.1557/proc-157-659openalex-snapshot
Effects of Ion Dose on the Morphology and Crystallization of Amorphous Germanium
inferred← citeshttps://doi.org/10.1557/proc-27-195openalex-snapshot
Ion Induced Morphological Instabilities in Ge
inferred← citeshttps://doi.org/10.1557/proc-27-205openalex-snapshot
The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation.
inferred← citeshttps://doi.org/10.1557/proc-27-223openalex-snapshot
Implantation Induced Filamentary Structures
inferred← citeshttps://doi.org/10.1557/proc-27-73openalex-snapshot
Dose Dependence of Ion Beam Mixing of Au on Amorphous and Single Crystalline Si and Ge
inferred← citeshttps://doi.org/10.21203/rs.3.rs-132556/v1openalex-snapshot
In-Situ Control of Defect Dynamics By Ellipsometry During Ion Implantation – Evolution of Disorder and Cavity Structure in Single-Crystalline Ge During Implantation of Sb Ions
inferred← citeshttps://doi.org/10.2320/materia.52.166openalex-snapshot
Formation of Nano-structure on Semiconductor Surface by Ion Irradiation
inferred← citeshttps://doi.org/10.2320/matertrans.m2010037openalex-snapshot
Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb
inferred← citeshttps://doi.org/10.2320/matertrans.m2010248openalex-snapshot
Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature
inferred← citeshttps://doi.org/10.2320/matertrans.mbw200729openalex-snapshot
Surface Sink Effects on Void Formation in GaSb and InSb under Ion Irradiation
inferred← citeshttps://doi.org/10.25368/2024.154openalex-snapshot
Fabrication, characterization and application of Si₁₋ₓ₋ᵧGeₓSnᵧ alloys
inferred← citeshttps://doi.org/10.3390/cryst8080316openalex-snapshot
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
inferred← citeshttps://doi.org/10.3390/ma10070813openalex-snapshot
Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
inferred← citeshttps://doi.org/10.3762/bjnano.6.32openalex-snapshot
Nanoporous Ge thin film production combining Ge sputtering and dopant implantation
inferred← citeshttps://doi.org/10.70675/dd2005a1z8dfbz4fcdzb31azf8f28447c999openalex-snapshot
Étude du dopage et de la formation des contacts pour les technologies germanium
Editorial review for independent work. ICSAC — the Institute for Complexity
Science and Advanced Computing — runs a structured editorial panel for researchers
publishing outside journals, and publishes on CiteStamp rails. Submission is free
and goes through ORCID: icsacinstitute.org/submit.