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Raman scattering study of the recovery process in Ga ion implanted GaSb
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0022-0248(83)90031-3openalex-snapshot
Crystal growth progress in response to the needs for optical communications
inferredcites →https://doi.org/10.1016/0022-0248(86)90494-xopenalex-snapshot
Czochralski growth and characterization of GaSb
inferredcites →https://doi.org/10.1016/0039-6028(91)91067-8openalex-snapshot
Growth mode of Bi and Sb layers on GaAs(110) and InP(110)
inferredcites →https://doi.org/10.1016/s0039-6028(87)80449-1openalex-snapshot
Characterization of UHV prepared Sb overlayers on (110) surfaces of III–V semiconductors
inferredcites →https://doi.org/10.1063/1.322338openalex-snapshot
Infrared reflection and Raman scattering of ion-implanted nitrogen in gallium phosphide
inferredcites →https://doi.org/10.1063/1.331426openalex-snapshot
Raman spectra from Si and Sn implanted GaAs
inferredcites →https://doi.org/10.1063/1.332773openalex-snapshot
The effects of ion-implantation damage on the first-order Raman spectra of GaP
inferredcites →https://doi.org/10.1063/1.332815openalex-snapshot
Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering
inferredcites →https://doi.org/10.1063/1.341952openalex-snapshot
Ion implantation damage and annealing in InAs, GaSb, and GaP
inferredcites →https://doi.org/10.1063/1.343509openalex-snapshot
Study of Ga ion implantation damage and annealing effect in Sn-doped InP using Raman scattering
inferredcites →https://doi.org/10.1063/1.94541openalex-snapshot
Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation
inferredcites →https://doi.org/10.1080/00018736400101051openalex-snapshot
The Raman effect in crystals
inferredcites →https://doi.org/10.1080/13642818408246500openalex-snapshot
Raman studies of non-stoichiometric amorphous GaSb films
inferredcites →https://doi.org/10.1103/physrev.144.390openalex-snapshot
Accurate Numerical Method for Calculating Frequency-Distribution Functions in Solids
inferredcites →https://doi.org/10.1103/physrevb.23.1743openalex-snapshot
Raman scattering spectra in mixed Ga1−xAlxAs(Sb) crystals
inferredcites →https://doi.org/10.1109/jqe.1981.1071068openalex-snapshot
Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Temperature Dependence on Surface Properties for Te-Doped GASB Crystals with N2-H2 Remote Plasma Nitridation
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Effects of varying indium composition on the thermoelectric properties of In x Ga1−x Sb ternary alloys
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Structural Characterization of Carbon-implanted GaSb
inferred← citeshttps://doi.org/10.1007/s11671-010-9739-2openalex-snapshot
Optical Properties of GaSb Nanofibers
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Swift heavy silver (Ag+7) ion irradiation induced self assembled nanodots on MBE grown Gallium antimonide (GaSb)
inferred← citeshttps://doi.org/10.1016/j.intermet.2018.11.006openalex-snapshot
Enhanced thermoelectric properties of InSb: Studies on In/Ga doped GaSb/InSb crystals
inferred← citeshttps://doi.org/10.1016/j.mssp.2012.03.003openalex-snapshot
Structural characterization of AlxGa1−xSb grown by LPE
inferred← citeshttps://doi.org/10.1016/j.mssp.2020.105107openalex-snapshot
Higher electrical activation of ion-implanted Si over S in GaSb epitaxial layers
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2009.02.092openalex-snapshot
Structural and optical studies of GaSb implanted with iron ions
inferred← citeshttps://doi.org/10.1016/j.tsf.2014.05.034openalex-snapshot
Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure
inferred← citeshttps://doi.org/10.1016/j.vacuum.2020.109523openalex-snapshot
2 MeV Argon (Ar+) ion induced nano-fabrication in GaSb epi-layers on GaAs substrates
inferred← citeshttps://doi.org/10.1016/j.vacuum.2024.113580openalex-snapshot
Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals
inferred← citeshttps://doi.org/10.1016/s0038-1098(98)00558-4openalex-snapshot
Observation of zinc-blende to diamond transition in metastable (GaAs)1−x(Ge2)x alloys by Raman scattering
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Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation
inferred← citeshttps://doi.org/10.1016/s0080-8784(08)60106-4openalex-snapshot
Chapter 3 Photoluminescence and Raman Scattering of Ion Implanted Semiconductors. Influence of Annealing
inferred← citeshttps://doi.org/10.1016/s0168-583x(02)01879-7openalex-snapshot
Effect of boron ion implantation on the structural and optical properties of polycrystalline Cd0.96Zn0.04Te thin films
inferred← citeshttps://doi.org/10.1016/s0168-583x(97)00391-1openalex-snapshot
Raman scattering and optical absorption studies of Ar+ implanted CdS thin films
inferred← citeshttps://doi.org/10.1021/acsami.6c04801openalex-snapshot
High Power Factor in Polycrystalline InGaSb Thin Films via Nanoscale Compositional Fluctuations
inferred← citeshttps://doi.org/10.1023/a:1021996418080openalex-snapshot
X-ray diffraction and Raman scattering studies in 10B+-implanted Cd0.96Zn0.04Te thin films prepared by vacuum evaporation
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Structural characterization and magnetic response of poly(p-xylylene)–MnSb and MnSb films deposited at cryogenic temperature
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Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing
inferred← citeshttps://doi.org/10.1063/1.1355697openalex-snapshot
Strain effects on As and Sb segregates immersed in annealed GaAs and GaSb by Raman spectroscopy
inferred← citeshttps://doi.org/10.1063/1.1805197openalex-snapshot
Increased terahertz emission from thermally treated GaSb
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Raman scattering study on the effects of Ga ion implantation and subsequent thermal annealing for AlSb grown by molecular-beam epitaxy
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Crystallization process of amorphous GaSb films studied by Raman spectroscopy
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Different recrystallization patterns of Si+ implanted GaAs
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Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb
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Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties
inferred← citeshttps://doi.org/10.1063/1.4897537openalex-snapshot
60 keV Ar+-ion induced modification of microstructural, compositional, and vibrational properties of InSb
inferred← citeshttps://doi.org/10.1088/1674-1056/18/5/047openalex-snapshot
Raman scattering of polycrystalline GaSb thin films grown by the co-evaporation process
inferred← citeshttps://doi.org/10.1109/tnano.2019.2939854openalex-snapshot
Mesoporous Structure With Interconnecting Nanofibers by Irradiating Low Energy (∼100 keV) Ar+-ions on Gallium Antimonide Epi-Layer
inferred← citeshttps://doi.org/10.1116/1.4886095openalex-snapshot
Characterization of surface defects on Be-implanted GaSb
inferred← citeshttps://doi.org/10.1116/6.0000895openalex-snapshot
Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films
inferred← citeshttps://doi.org/10.1117/12.2040276openalex-snapshot
Beryllium implant activation and damage recovery study in n-type GaSb
inferred← citeshttps://doi.org/10.1117/12.2079635openalex-snapshot
GaSb thermophotovoltaics: current challenges and solutions
inferred← citeshttps://doi.org/10.1134/1.1852662openalex-snapshot
Photoluminescence and the Raman scattering in porous GaSb produced by ion implantation
inferred← citeshttps://doi.org/10.1134/s1063776118090145openalex-snapshot
Heat-Treatment Induced Magnetic Anisotropy of GaMnSb Films
inferred← citeshttps://doi.org/10.1134/s1063782620040089openalex-snapshot
Raman Scattering in the InSb–MnSb Eutectic Composite
inferred← citeshttps://doi.org/10.1557/jmr.2009.0287openalex-snapshot
Formation of GaSb core-shell nanofibers by a thermally induced phase decomposition process
inferred← citeshttps://doi.org/10.26565/2312-4334-2023-3-38openalex-snapshot
X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique
inferred← citeshttps://doi.org/10.35848/1882-0786/ad9377openalex-snapshot
Optical and electrical properties of proton-implanted p-GaSb for electrical isolation
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